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Symmetric silicon microring resonator optical crossbar array for accelerated inference and training in deep learning
Authors:
Rui Tang,
Shuhei Ohno,
Ken Tanizawa,
Kazuhiro Ikeda,
Makoto Okano,
Kasidit Toprasertpong,
Shinichi Takagi,
Mitsuru Takenaka
Abstract:
Photonic integrated circuits are emerging as a promising platform for accelerating matrix multiplications in deep learning, leveraging the inherent parallel nature of light. Although various schemes have been proposed and demonstrated to realize such photonic matrix accelerators, the in-situ training of artificial neural networks using photonic accelerators remains challenging due to the difficult…
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Photonic integrated circuits are emerging as a promising platform for accelerating matrix multiplications in deep learning, leveraging the inherent parallel nature of light. Although various schemes have been proposed and demonstrated to realize such photonic matrix accelerators, the in-situ training of artificial neural networks using photonic accelerators remains challenging due to the difficulty of direct on-chip backpropagation on a photonic chip. In this work, we propose a silicon microring resonator (MRR) optical crossbar array with a symmetric structure that allows for simple on-chip backpropagation, potentially enabling the acceleration of both the inference and training phases of deep learning. We demonstrate a $4 \times 4$ circuit on a Si-on-insulator (SOI) platform and use it to perform inference tasks of a simple neural network for classifying Iris flowers, achieving a classification accuracy of 93.3%. Subsequently, we train the neural network using simulated on-chip backpropagation and achieve an accuracy of 91.1% in the same inference task after training. Furthermore, we simulate a convolutional neural network (CNN) for handwritten digit recognition, using a $9 \times 9$ MRR crossbar array to perform the convolution operations. This work contributes to the realization of compact and energy-efficient photonic accelerators for deep learning.
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Submitted 1 June, 2024; v1 submitted 29 January, 2024;
originally announced January 2024.
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Non-volatile optical phase shift in ferroelectric hafnium zirconium oxide
Authors:
Kazuma Taki,
Naoki Sekine,
Kouhei Watanabe,
Yuto Miyatake,
Tomohiro Akazawa,
Hiroya Sakumoto,
Kasidit Toprasertpong,
Shinichi Takagi,
Mitsuru Takenaka
Abstract:
A non-volatile optical phase shifter is a critical component for enabling large-scale, energy-efficient programmable photonic integrated circuits (PICs) on a silicon (Si) photonics platform. While ferroelectric materials like BaTiO3 offer non-volatile optical phase shift capabilities, their compatibility with complementary metal-oxide-semiconductor (CMOS) fabs is limited. Hence, the search for a n…
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A non-volatile optical phase shifter is a critical component for enabling large-scale, energy-efficient programmable photonic integrated circuits (PICs) on a silicon (Si) photonics platform. While ferroelectric materials like BaTiO3 offer non-volatile optical phase shift capabilities, their compatibility with complementary metal-oxide-semiconductor (CMOS) fabs is limited. Hence, the search for a novel CMOS-compatible ferroelectric material for non-volatile optical phase shifting in Si photonics is of utmost importance. Hafnium zirconium oxide (HZO) is an emerging ferroelectric material discovered in 2011, which exhibits CMOS compatibility due to the utilization of high-k dielectric HfO2 in CMOS transistors. Although extensively studied for ferroelectric transistors and memories, its application in photonics remains relatively unexplored. Here, we show the optical phase shift induced by ferroelectric HZO deposited on a SiN optical waveguide. We observed a negative change in refractive index at a 1.55 um wavelength in the pristine device regardless of the direction of an applied electric filed. We achieved approximately pi phase shift in a 4.5-mm-long device with negligible optical loss. The non-volatile multi-level optical phase shift was confirmed with a persistence of > 10000 s. This phase shift can be attributed to the spontaneous polarization within the HZO film along the external electric field. We anticipate that our results will stimulate further research on optical nonlinear effects, such as the Pockels effect, in ferroelectric HZO. This advancement will enable the development of various devices, including high-speed optical modulators. Consequently, HZO-based programmable PICs are poised to become indispensable in diverse applications, ranging from optical fiber communication and artificial intelligence to quantum computing and sensing.
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Submitted 5 September, 2023;
originally announced September 2023.
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Breakdown-limited endurance in HZO FeFETs: mechanism and improvement under bipolar stress
Authors:
Kasidit Toprasertpong,
Mitsuru Takenaka,
Shinichi Takagi
Abstract:
Breakdown is one of main failure mechanisms that limit write endurance of ferroelectric devices using hafnium oxide-based ferroelectric materials. In this study, we investigate the gate current and breakdown characteristics of Hf0.5Zr0.5O2/Si ferroelectric field-effect transistors (FeFETs) by using carrier separation measurements to analyze electron and hole leakage currents during time-dependent…
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Breakdown is one of main failure mechanisms that limit write endurance of ferroelectric devices using hafnium oxide-based ferroelectric materials. In this study, we investigate the gate current and breakdown characteristics of Hf0.5Zr0.5O2/Si ferroelectric field-effect transistors (FeFETs) by using carrier separation measurements to analyze electron and hole leakage currents during time-dependent dielectric breakdown (TDDB) tests. Rapidly increasing substrate hole currents and stress-induced leakage current (SILC)-like electron currents can be observed before the breakdown of the ferroelectric gate insulator of FeFETs. This apparent degradation under voltage stress is recovered and the time-to-breakdown is significantly improved by interrupting the TDDB test with gate voltage pulses with the opposite polarity, suggesting that defect redistribution, rather than defect generation, is responsible for the trigger of hard breakdown.
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Submitted 13 January, 2023; v1 submitted 9 January, 2023;
originally announced January 2023.
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Memory Window in Ferroelectric Field-Effect Transistors: Analytical Approach
Authors:
Kasidit Toprasertpong,
Mitsuru Takenaka,
Shinichi Takagi
Abstract:
A memory window of ferroelectric field-effect transistors (FeFETs), defined as a separation of the HIGH-state and the LOW-state threshold voltages, is an important measure of the FeFET memory characteristics. In this study, we theoretically investigate the relation between the FeFET memory window and the P-E hysteresis loop of the ferroelectric gate insulator, and derive a compact model explicitly…
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A memory window of ferroelectric field-effect transistors (FeFETs), defined as a separation of the HIGH-state and the LOW-state threshold voltages, is an important measure of the FeFET memory characteristics. In this study, we theoretically investigate the relation between the FeFET memory window and the P-E hysteresis loop of the ferroelectric gate insulator, and derive a compact model explicitly described by material parameters. It is found that the memory window is linearly proportional to the ferroelectric polarization for the small polarization regime, and converges to the limit value of 2 x coercive field x thickness when the remanent polarization is much larger than permittivity x coercive field. We discuss additional factors that possibly influence the memory window in actual devices such as the existence of interlayer (no direct impact), interface charges (invalidity of linear superposition between the ferroelectric and charge-trapping hysteresis), and minor-loop operation (behavior equivalent to the generation of interface charges).
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Submitted 3 November, 2022;
originally announced November 2022.
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Non-volatile hybrid optical phase shifter driven by a ferroelectric transistor
Authors:
Rui Tang,
Kouhei Watanabe,
Masahiro Fujita,
Hanzhi Tang,
Tomohiro Akazawa,
Kasidit Toprasertpong,
Shinichi Takagi,
Mitsuru Takenaka
Abstract:
Optical phase shifters are essential elements in photonic integrated circuits (PICs) and function as a direct interface to program the PIC. Non-volatile phase shifters, which can retain information without a power supply, are highly desirable for low-power static operations. Here a non-volatile optical phase shifter is demonstrated by driving a III-V/Si hybrid metal-oxide-semiconductor (MOS) phase…
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Optical phase shifters are essential elements in photonic integrated circuits (PICs) and function as a direct interface to program the PIC. Non-volatile phase shifters, which can retain information without a power supply, are highly desirable for low-power static operations. Here a non-volatile optical phase shifter is demonstrated by driving a III-V/Si hybrid metal-oxide-semiconductor (MOS) phase shifter with a ferroelectric field-effect transistor (FeFET) operating in the source follower mode. Owing to the various polarization states in the FeFET, multistate non-volatile phase shifts up to 1.25π are obtained with CMOS-compatible operation voltages and low switching energy up to 3.3 nJ. Furthermore, a crossbar array architecture is proposed to simplify the control of non-volatile phase shifters in large-scale PICs and its feasibility is verified by confirming the selective write-in operation of a targeted FeFET with a negligible disturbance to the others. This work paves the way for realizing large-scale non-volatile programmable PICs for emerging computing applications such as deep learning and quantum computing.
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Submitted 10 October, 2023; v1 submitted 11 October, 2022;
originally announced October 2022.
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Lubrication effects on droplet manipulation by electrowetting-on-dielectric (EWOD)
Authors:
Ken Yamamoto,
Shimpei Takagi,
Yoshiyasu Ichikawa,
Masahiro Motosuke
Abstract:
Electrowetting has a potential to realize stand-alone point-of-care (POC) devices. Here we report droplet-migration characteristics on oil-infused electrowetting-on-dielectric (EWOD) substrates. We prepare sparse micropillars to retain the oil layer in order to exploit the layer as a lubricating film. A physical model of the droplet velocity is developed, and effects of the lubrication, the oil vi…
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Electrowetting has a potential to realize stand-alone point-of-care (POC) devices. Here we report droplet-migration characteristics on oil-infused electrowetting-on-dielectric (EWOD) substrates. We prepare sparse micropillars to retain the oil layer in order to exploit the layer as a lubricating film. A physical model of the droplet velocity is developed, and effects of the lubrication, the oil viscosity, the droplet volume, and the thickness of solid and liquid dielectric layers are discussed. It is found that the droplet velocity is scaled as square of E, which differs from a relationship of cube of E for droplets sliding down on liquid-infused surfaces by gravity. Furthermore, our device achieves droplet velocity of 1 mm/s at the applied voltage of 15 V. The velocity is approximately tenfold as high as the same condition (applied voltage and oil viscosity) on porous-structure-based liquid-infused surfaces. The achieved high velocity is explained by a lubrication-flow effect.
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Submitted 2 November, 2022; v1 submitted 24 January, 2022;
originally announced January 2022.
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An Eulerian-based immersed boundary method for particle suspensions with implicit lubrication model
Authors:
Naoki Hori,
Marco Edoardo Rosti,
Shu Takagi
Abstract:
We describe an immersed boundary method in which the fluid-structure coupling is achieved in an Eulerian framework. The method is an improved extension of the immersed boundary method originally developed by Kajishima et al. [1], which accounts for the inertia of the fictitious fluid inside the particle volume and is thus able to reproduce the behaviour of particles both in the case of neutrally-b…
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We describe an immersed boundary method in which the fluid-structure coupling is achieved in an Eulerian framework. The method is an improved extension of the immersed boundary method originally developed by Kajishima et al. [1], which accounts for the inertia of the fictitious fluid inside the particle volume and is thus able to reproduce the behaviour of particles both in the case of neutrally-buoyant objects and in the presence of density difference between the particles and the fluid. The method is capable to handle the presence of multiple suspended objects, i.e., a suspension, by including a soft-sphere normal collision model, while the lubrication correction typically added to similar immersed boundary methods in order to capture the sub-grid unresolved lubrication force is here treated implicitly, i.e., naturally obtained without any explicit expression, thus no additional computation is required. We show that our methodology can successfully reproduce the rheology of a particle suspension in a shear flow up to a dense regime (with a maximum particle volume fraction around 46%) without any additional correction force. The applicability of this methodology is also tested in a turbulent pressure-driven duct flow at high Reynolds number in the presence of non-negligible inertia and non-uniform shear-rate, showing good agreement with experimental measurements.
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Submitted 10 January, 2022;
originally announced January 2022.
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Ultrahigh-sensitivity optical power monitor for Si photonic circuits
Authors:
Takaya Ochiai,
Kei Sumita,
Shuhei Ohno,
Stéphane Monfray,
Frederic Boeuf,
Kasidit Toprasertpong,
Shinichi Takagi,
Mitsuru Takenaka
Abstract:
A phototransistor is a promising candidate as an optical power monitor in Si photonic circuits since the internal gain of photocurrent enables high sensitivity. However, state-of-the-art waveguide-coupled phototransistors suffer from a responsivity of lower than $10^3$ A/W, which is insufficient for detecting very low power light. Here, we present a waveguide-coupled phototransistor consisting of…
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A phototransistor is a promising candidate as an optical power monitor in Si photonic circuits since the internal gain of photocurrent enables high sensitivity. However, state-of-the-art waveguide-coupled phototransistors suffer from a responsivity of lower than $10^3$ A/W, which is insufficient for detecting very low power light. Here, we present a waveguide-coupled phototransistor consisting of an InGaAs ultrathin channel on a Si waveguide working as a gate electrode to increase the responsivity. The Si waveguide gate underneath the InGaAs ultrathin channel enables the effective control of transistor current without optical absorption by the gate metal. As a result, our phototransistor achieved the highest responsivity of approximately $10^6$ A/W among the waveguide-coupled phototransistors, allowing us to detect light of 621 fW propagating in the Si waveguide. The high responsivity and the reasonable response time of approximately 100 $μ$s make our phototransistor promising as an effective optical power monitor in Si photonics circuits.
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Submitted 2 November, 2021;
originally announced November 2021.
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Shear-thinning and shear-thickening emulsions in shear flows
Authors:
Marco Edoardo Rosti,
Shu Takagi
Abstract:
We study the rheology of a two-fluid emulsion in semi-concentrated conditions; the solute is Newtonian while the solvent an inelastic power law fluid. The problem at hand is tackled by means of direct numerical simulations using the volume of fluid method. The analysis is performed for different volume fractions and viscosity ratios under the assumption of negligible inertia and zero buoyancy forc…
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We study the rheology of a two-fluid emulsion in semi-concentrated conditions; the solute is Newtonian while the solvent an inelastic power law fluid. The problem at hand is tackled by means of direct numerical simulations using the volume of fluid method. The analysis is performed for different volume fractions and viscosity ratios under the assumption of negligible inertia and zero buoyancy force. Several carrier fluids are considered encompassing both the shear-thinning and thickening behaviors. We show that the effective viscosity of the system increases for shear-thickening fluids and decreases for the shear-thinning ones for all the viscosity ratios considered. The changes in the emulsion viscosity are mainly due to modifications of the coalescence in the system obtained by changing the carrier fluid property: indeed, local large and low shear rates are found in the regions between two interacting droplets for shear-thickening and thinning fluids, respectively, resulting in increased and reduced local viscosity which ultimately affects the drainage time of the system. This process is independent of the nominal viscosity ratio of the two fluids and we show that it can not be understood by considering only the mean shear rate and viscosity of the two fluids across the domain, but the full spectrum of shear rate must be taken into account.
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Submitted 1 August, 2021;
originally announced August 2021.
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Si microring resonator crossbar array for on-chip inference and training of optical neural network
Authors:
Shuhei Ohno,
Kasidit Toprasertpong,
Shinichi Takagi,
Mitsuru Takenaka
Abstract:
Deep learning is one of the most advancing technologies in various fields. Facing the limits of the current electronics platform, optical neural networks (ONNs) based on Si programmable photonic integrated circuits (PICs) have attracted considerable attention as a novel deep learning scheme with optical-domain matrix-vector multiplication (MVM). However, most of the proposed Si programmable PICs f…
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Deep learning is one of the most advancing technologies in various fields. Facing the limits of the current electronics platform, optical neural networks (ONNs) based on Si programmable photonic integrated circuits (PICs) have attracted considerable attention as a novel deep learning scheme with optical-domain matrix-vector multiplication (MVM). However, most of the proposed Si programmable PICs for ONNs have several drawbacks such as low scalability, high power consumption, and lack of frameworks for training. To address these issues, we have proposed a microring resonator (MRR) crossbar array as a Si programmable PIC for an ONN. In this article, we present a prototype of a fully integrated 4 ${\rm \times}$ 4 MRR crossbar array and demonstrated a simple MVM and classification task. Moreover, we propose on-chip backpropagation using the transpose matrix operation of the MRR crossbar array, enabling the on-chip training of the ONN. The proposed ONN scheme can establish a scalable, power-efficient deep learning accelerator for applications in both inference and training tasks.
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Submitted 28 June, 2021; v1 submitted 7 June, 2021;
originally announced June 2021.
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Symmetry-preserving enforcement of low-dissipation method based on boundary variation diminishing principle
Authors:
Hiro Wakimura,
Shinichi Takagi,
Feng Xiao
Abstract:
A class of high-order shock-capturing schemes, P$_n$T$_m$-BVD (Deng et al., J. Comp. Phys., 386:323-349, 2019; Comput. & Fluids, 200:104433, 2020.) schemes, have been devised to solve the Euler equations with substantially reduced numerical dissipation, which enable high-resolution simulations to resolve flow structures of wider range scales. In such simulations with low dissipation, errors of rou…
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A class of high-order shock-capturing schemes, P$_n$T$_m$-BVD (Deng et al., J. Comp. Phys., 386:323-349, 2019; Comput. & Fluids, 200:104433, 2020.) schemes, have been devised to solve the Euler equations with substantially reduced numerical dissipation, which enable high-resolution simulations to resolve flow structures of wider range scales. In such simulations with low dissipation, errors of round-off level might grow and contaminate the numerical solutions. A typical example of such problems is the loss of symmetry in the numerical solutions for physical problems of symmetric configurations even if the schemes are mathematically in line with the symmetry rules. In this study, the mechanisms of symmetry-breaking in a finite volume framework with the P$_4$T$_2$-BVD reconstruction scheme are thoroughly examined. Particular attention has been paid to remove the possible causes due to the lack of associativity in floating-point arithmetic which is associated with round-off errors. Modifications and new techniques are proposed to completely remove the possible causes for symmetry breaking in different components of the P$_4$T$_2$-BVD finite volume solver. Benchmark tests that have symmetric solution structures are used to verify the proposed methods. The numerical results demonstrate the perfect symmetric solution structures.
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Submitted 3 June, 2021;
originally announced June 2021.
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On viscid-inviscid interactions of a pair of bubbles rising near the wall
Authors:
Kazuki Maeda,
Masanobu Date,
Kazuyasu Sugiyama,
Shu Takagi,
Yoichiro Matsumoto
Abstract:
Series of experiments on turbulent bubbly channel flows observed bubble clusters near the wall which can change large-scale flow structures. To gain insights into clustering mechanisms, we study the interaction of a pair of spherical bubbles rising in a vertical channel through combined experiments and modeling. Experimental imaging identifies that pairwise bubbles of 1.0 mm diameter take two pref…
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Series of experiments on turbulent bubbly channel flows observed bubble clusters near the wall which can change large-scale flow structures. To gain insights into clustering mechanisms, we study the interaction of a pair of spherical bubbles rising in a vertical channel through combined experiments and modeling. Experimental imaging identifies that pairwise bubbles of 1.0 mm diameter take two preferred configurations depending on their mutual distance: side-by-side positions for a short distance ($S<5$) and nearly inline, oblique positions for a long distance ($S>5$), where $S$ is the mutual distance normalized by the bubble radius. In the model, we formulate the motions of pairwise bubbles rising at $Re=O(100)$. Analytical drag and lift, and semi-empirical, spatio-temporal stochastic forcing are employed to represent the mean acceleration and the fluctuation due to turbulent agitation, respectively. The model is validated against the experiment through comparing Lagrangian statistics of the bubbles. Simulations using this model identify two distinct timescales of interaction dynamics which elucidate the preferred configurations. For pairs initially in-line, the trailing bubble rapidly escapes from the viscous wake of the leading bubble to take the oblique position. Outside of the wake, the trailing bubble travels on a curve-line path with a slower velocity driven by potential interaction and horizontally approaches the leading bubble to become side-by-side. Moreover, statistical analysis identifies that the combination of the wake and the agitation can significantly accelerate the side-by-side clustering of in-line pairs. These results indicate positive contributions of liquid viscosity and turbulence to the formation of bubble clusters.
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Submitted 16 October, 2020;
originally announced October 2020.
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Molecular Insights into the Mechanical Properties of Polymer-Fullerene Bulk Heterojunctions for Organic Photovoltaic Applications
Authors:
Yuta Yoshimoto,
Sou Sugiyama,
Shuntaro Shimada,
Toshihiro Kaneko,
Shu Takagi,
Ikuya Kinefuchi
Abstract:
We investigate the mechanical properties of $π$-conjugated polymeric materials composed of regioregular poly(3-hexylthiophene) (P3HT) and fullerene C$_{60}$ using coarse-grained molecular dynamics simulations. Specifically, we perform tensile simulations of P3HT:C$_{60}$ composites with varied degrees of polymerization and C$_{60}$ mass fractions to obtain their stress-strain responses. Decomposit…
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We investigate the mechanical properties of $π$-conjugated polymeric materials composed of regioregular poly(3-hexylthiophene) (P3HT) and fullerene C$_{60}$ using coarse-grained molecular dynamics simulations. Specifically, we perform tensile simulations of P3HT:C$_{60}$ composites with varied degrees of polymerization and C$_{60}$ mass fractions to obtain their stress-strain responses. Decomposition of stress tensor into kinetic energy and virial contributions indicates that the tensile moduli of the pure P3HT samples are greatly dependent on non-bonded interactions and on bonded interactions associated with bond-stretching, while the addition of C$_{60}$ leads to an increase in the tensile modulus originating from enhanced non-bonded interactions associated with C$_{60}$. Additionally, the tensile strength of the P3HT:C$_{60}$ samples correlates well with molecular chain entanglements, which are characterized by the average number of kinks per chain obtained from primitive path analysis. We also find that the upper and lower yield points characterizing strain softening become more pronounced with increasing C$_{60}$ mass fraction. Persistent homology analysis indicates that the emergence of the yield points correlates well with the coalescence of microvoids in the course of tensile deformation, resulting in the generation of larger voids. These results provide a fundamental understanding of the molecular determinants of the mechanical properties of $π$-conjugated polymer-fullerene composites, which can also help to interpret and predict the mechanical properties of other polymer composites containing fullerene.
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Submitted 8 January, 2021; v1 submitted 5 October, 2020;
originally announced October 2020.
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Relating the thermal properties of a micro pulsating heat pipe to the internal flow characteristics via experiments, image recognition of flow patterns and heat transfer simulations
Authors:
Chihiro Kamijima,
Yuta Yoshimoto,
Yutaro Abe,
Shu Takagi,
Ikuya Kinefuchi
Abstract:
We investigate the relationship between the thermal properties of a micro pulsating heat pipe (MPHP) and the internal flow characteristics. The MPHP consists of an eleven-turn closed-loop of a meandering square microchannel with a hydraulic diameter of $350\ {}μ{\rm m}$ engraved on a silicon substrate. The MPHP charged with Fluorinert FC-72 tends to exhibit higher effective thermal conductivities…
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We investigate the relationship between the thermal properties of a micro pulsating heat pipe (MPHP) and the internal flow characteristics. The MPHP consists of an eleven-turn closed-loop of a meandering square microchannel with a hydraulic diameter of $350\ {}μ{\rm m}$ engraved on a silicon substrate. The MPHP charged with Fluorinert FC-72 tends to exhibit higher effective thermal conductivities for the coolant temperature of $T_{\rm c} = 40\ {}^\circ\mathrm{C}$ compared to $T_{\rm c} = 20\ {}^\circ\mathrm{C}$, and provides the highest effective thermal conductivity of about $700\ {}{\rm W/(m{\cdot}K)}$ for $T_{\rm c} = 40\ {}^\circ\mathrm{C}$ and a filling ratio of 48%. Interestingly, we observe two different self-oscillation modes having different thermal conductivities, even for identical heat input rates. This tendency indicates a hysteresis of the effective thermal conductivity, which originates from the difference in the heat input rates at which the MPHP falls into and recovers from dryout. Subsequently, semantic segmentation-based image recognition is applied to the recorded flow images to identify the flow characteristics, successfully extracting four different flow patterns involving liquid slugs, liquid films, dry walls, and rapid-boiling regions. The image recognition results indicate that high effective thermal conductivities of the MPHP relate to stable self-oscillations with large amplitudes and high frequencies, along with long and thin liquid films beneficial for latent heat transfer. Finally, we perform numerical simulations of latent/sensible heat transfer via vapor plugs and of sensible heat transfer via liquid slugs using the extracted flow patterns as inputs. We find that latent heat transfer via liquid films accounts for a considerable portion of the overall heat transfer, while the sensible heat transfer via liquid slugs is much less significant.
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Submitted 10 September, 2020; v1 submitted 21 April, 2020;
originally announced June 2020.
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Evaluation of polarization characteristics in metal/ferroelectric/semiconductor capacitors and ferroelectric field-effect transistors
Authors:
Kasidit Toprasertpong,
Kento Tahara,
Mitsuru Takenaka,
Shinichi Takagi
Abstract:
In this study, we propose a measurement technique for evaluating ferroelectric polarization characteristics in ferroelectric field-effect transistors (FeFETs). Different from standard metal/ferroelectric/metal capacitors, the depletion and inversion phenomena in semiconductor substrates have to be carefully taken into account when evaluating the ferroelectric properties using fast voltage sweep as…
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In this study, we propose a measurement technique for evaluating ferroelectric polarization characteristics in ferroelectric field-effect transistors (FeFETs). Different from standard metal/ferroelectric/metal capacitors, the depletion and inversion phenomena in semiconductor substrates have to be carefully taken into account when evaluating the ferroelectric properties using fast voltage sweep as input. The non-equilibrium deep depletion is found to be the limiting factor for the accurate evaluation of ferroelectric properties in metal/ferroelectric/semiconductor capacitors. By connecting the source, drain, and substrate of the FeFET together during the polarization measurement, the deep depletion can be suppressed and the ferroelectricity of the ferroelectric gate can be accurately evaluated. The present technique is a powerful method for capturing the polarization states in FeFETs, enabling new approaches for device characterization and fundamental study, and overcomes the limitation found in the conventional polarization measurement on 2-terminal metal/ferroelectric/semiconductor capacitors.
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Submitted 15 June, 2020; v1 submitted 30 May, 2020;
originally announced June 2020.
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Morphology and dynamics of Venus's middle clouds with Akatsuki/IR1
Authors:
J. Peralta,
N. Iwagami,
Sánchez-Lavega,
Y. J. Lee,
R. Hueso,
M. Narita,
T. Imamura,
P. Miles,
A. Wesley,
E. Kardasis,
S. Takagi
Abstract:
The Venusian atmosphere is covered by clouds with super-rotating winds whose accelerating mechanism is still not well understood. The fastest winds, occurring at the cloud tops ($\sim$70 km height), have been studied for decades thanks to their visual contrast in dayside ultraviolet images. The middle clouds ($\sim$50-55 km) can be observed at near-infrared wavelengths (800-950 nm), although with…
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The Venusian atmosphere is covered by clouds with super-rotating winds whose accelerating mechanism is still not well understood. The fastest winds, occurring at the cloud tops ($\sim$70 km height), have been studied for decades thanks to their visual contrast in dayside ultraviolet images. The middle clouds ($\sim$50-55 km) can be observed at near-infrared wavelengths (800-950 nm), although with very low contrast. Here we present the first extensive analysis of their morphology and motions at lower latitudes along 2016 with 900-nm images from the IR1 camera onboard Akatsuki. The middle clouds exhibit hemispherical asymmetries every 4-5 days, sharp discontinuities in elongated "hook-like" stripes, and large contrasts (3-21%) probably associated with large changes in the optical thickness. Zonal winds obtained with IR1 images and with ground-based observations reveal mean zonal winds peaking at the equator, while their combination with Venus Express unveils long-term variations of 20 m s$^{-1}$ along 10 years.
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Submitted 7 March, 2019;
originally announced March 2019.
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Evaluation of Adjoint Methods in Photoacoustic Tomography with Under-Sampled Sensors
Authors:
Hongxiang Lin,
Takashi Azuma,
Mehmet Burcin Unlu,
Shu Takagi
Abstract:
Photo-Acoustic Tomography (PAT) can reconstruct a distribution of optical absorbers acting as instantaneous sound sources in subcutaneous microvasculature of a human breast. Adjoint methods for PAT, typically Time-Reversal (TR) and Back-Projection (BP), are ways to refocus time-reversed acoustic signals on sources by wave propagation from the position of sensors. TR and BP have different treatment…
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Photo-Acoustic Tomography (PAT) can reconstruct a distribution of optical absorbers acting as instantaneous sound sources in subcutaneous microvasculature of a human breast. Adjoint methods for PAT, typically Time-Reversal (TR) and Back-Projection (BP), are ways to refocus time-reversed acoustic signals on sources by wave propagation from the position of sensors. TR and BP have different treatments for received signals, but they are equivalent under continuously sampling on a closed circular sensor array in two dimensions. Here, we analyze image quality with discrete under-sampled sensors in the sense of the Shannon sampling theorem. We investigate resolution and contrast of TR and BP, respectively in one source-sensor pair configuration and the frequency domain. With Hankel's asymptotic expansion to the integrands of imaging functions, our main contribution is to demonstrate that TR and BP have better performance on contrast and resolution, respectively. We also show that the integrand of TR includes additional side lobes which degrade axial resolution whereas that of BP conversely has relatively small amplitudes. Moreover, omnidirectional resolution is improved if more sensors are employed to collect the received signals. Nevertheless, for the under-sampled sensors, we propose the Truncated Back-Projection (TBP) method to enhance the contrast of BP using removing higher frequency components in the received signals. We conduct numerical experiments on the two-dimensional projected phantom model extracted from OA-Breast Database. The experiments verify our theories and show that the proposed TBP possesses better omnidirectional resolution as well as contrast compared with TR and BP with under-sampled sensors.
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Submitted 22 June, 2018;
originally announced June 2018.
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High-modulation-efficiency InGaAsP/Si hybrid MOS optical modulator with Mach-Zehnder interferometer
Authors:
Jae-Hoon Han,
Frederic Boeuf,
Shinichi Takagi,
Mitsuru Takenaka
Abstract:
A high-modulation-efficiency optical modulator integrated on silicon (Si) is a key enabler for low-power and high-capacity optical interconnects. However, Si-based optical modulators suffer from low phase modulation efficiency owing to the weak plasma dispersion effect in Si. Therefore, it is essential to find a novel modulation scheme that is compatible with a Si photonics platform. Here, we demo…
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A high-modulation-efficiency optical modulator integrated on silicon (Si) is a key enabler for low-power and high-capacity optical interconnects. However, Si-based optical modulators suffer from low phase modulation efficiency owing to the weak plasma dispersion effect in Si. Therefore, it is essential to find a novel modulation scheme that is compatible with a Si photonics platform. Here, we demonstrate an InGaAsP/Si hybrid metal-oxide-semiconductor (MOS) optical modulator with a Mach-Zehnder interferometer (MZI) formed by direct wafer bonding with an Al2O3 bonding interface. Electron accumulation at the InGaAsP MOS interface enables the extraction of the electron-induced refractive index change in InGaAsP, which is significantly greater than that in Si. The presented modulator exhibits a phase modulation efficiency of 0.047 Vcm, which is approximately 5 times higher than that of Si MOS optical modulators. This approach provides a new efficient scheme of phase modulation on a Si photonics platform for low-power, high-speed, and high-density optical links.
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Submitted 7 February, 2017;
originally announced February 2017.
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Strain-induced enhancement of plasma dispersion effect and free-carrier absorption in SiGe optical modulators
Authors:
Younghyun Kim,
Mitsuru Takenaka,
Takenori Osada,
Masahiko Hata,
Shinichi Takagi
Abstract:
The plasma dispersion effect and free-carrier absorption are widely used for changing refractive index and absorption coefficient in Si-based optical modulators. However, these free-carrier effects in Si are not large enough for making the footprint of the Si modulators small. Here, we have theoretically and experimentally investigated the enhancement of the plasma dispersion effect and free-carri…
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The plasma dispersion effect and free-carrier absorption are widely used for changing refractive index and absorption coefficient in Si-based optical modulators. However, these free-carrier effects in Si are not large enough for making the footprint of the Si modulators small. Here, we have theoretically and experimentally investigated the enhancement of the plasma dispersion effect and free-carrier absorption by strain-induced mass modulation in silicon-germanium (SiGe). The application of compressive strain to SiGe reduces the conductivity hole mass, resulting in the enhanced free-carrier effects. Thus, the strained SiGe-based optical modulator exhibits more than twice modulation efficiency as large as that of the Si modulator. To the best of our knowledge, it is the first demonstration of the enhanced free-carrier effects in strained SiGe at the near-infrared telecommunication wavelength. The strain-induced enhancement technology for the free-carrier effects is expected to boost the modulation efficiency of the most Si-based optical modulators thanks to high complementary metal-oxide-semiconductor (CMOS) compatibility.
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Submitted 3 April, 2013;
originally announced April 2013.
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A full Eulerian finite difference approach for solving fluid-structure coupling problems
Authors:
Kazuyasu Sugiyama,
Satoshi Ii,
Shintaro Takeuchi,
Shu Takagi,
Yoichiro Matsumoto
Abstract:
A new simulation method for solving fluid-structure coupling problems has been developed. All the basic equations are numerically solved on a fixed Cartesian grid using a finite difference scheme. A volume-of-fluid formulation (Hirt and Nichols (1981, J. Comput. Phys., 39, 201)), which has been widely used for multiphase flow simulations, is applied to describing the multi-component geometry. The…
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A new simulation method for solving fluid-structure coupling problems has been developed. All the basic equations are numerically solved on a fixed Cartesian grid using a finite difference scheme. A volume-of-fluid formulation (Hirt and Nichols (1981, J. Comput. Phys., 39, 201)), which has been widely used for multiphase flow simulations, is applied to describing the multi-component geometry. The temporal change in the solid deformation is described in the Eulerian frame by updating a left Cauchy-Green deformation tensor, which is used to express constitutive equations for nonlinear Mooney-Rivlin materials. In this paper, various verifications and validations of the present full Eulerian method, which solves the fluid and solid motions on a fixed grid, are demonstrated, and the numerical accuracy involved in the fluid-structure coupling problems is examined.
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Submitted 19 September, 2010;
originally announced September 2010.
