Showing 1–11 of 11 results for author: Toprasertpong, K

Symmetric silicon microring resonator optical crossbar array for accelerated inference and training in deep learning

Authors: Rui Tang, Shuhei Ohno, Ken Tanizawa, Kazuhiro Ikeda, Makoto Okano, Kasidit Toprasertpong, Shinichi Takagi, Mitsuru Takenaka

Abstract: Photonic integrated circuits are emerging as a promising platform for accelerating matrix multiplications in deep learning, leveraging the inherent parallel nature of light. Although various schemes have been proposed and demonstrated to realize such photonic matrix accelerators, the in-situ training of artificial neural networks using photonic accelerators remains challenging due to the difficult… ▽ More Photonic integrated circuits are emerging as a promising platform for accelerating matrix multiplications in deep learning, leveraging the inherent parallel nature of light. Although various schemes have been proposed and demonstrated to realize such photonic matrix accelerators, the in-situ training of artificial neural networks using photonic accelerators remains challenging due to the difficulty of direct on-chip backpropagation on a photonic chip. In this work, we propose a silicon microring resonator (MRR) optical crossbar array with a symmetric structure that allows for simple on-chip backpropagation, potentially enabling the acceleration of both the inference and training phases of deep learning. We demonstrate a $4 \times 4$ circuit on a Si-on-insulator (SOI) platform and use it to perform inference tasks of a simple neural network for classifying Iris flowers, achieving a classification accuracy of 93.3%. Subsequently, we train the neural network using simulated on-chip backpropagation and achieve an accuracy of 91.1% in the same inference task after training. Furthermore, we simulate a convolutional neural network (CNN) for handwritten digit recognition, using a $9 \times 9$ MRR crossbar array to perform the convolution operations. This work contributes to the realization of compact and energy-efficient photonic accelerators for deep learning. △ Less

Submitted 1 June, 2024; v1 submitted 29 January, 2024; originally announced January 2024.

Journal ref: Photonics Research, 2024

Non-volatile optical phase shift in ferroelectric hafnium zirconium oxide

Authors: Kazuma Taki, Naoki Sekine, Kouhei Watanabe, Yuto Miyatake, Tomohiro Akazawa, Hiroya Sakumoto, Kasidit Toprasertpong, Shinichi Takagi, Mitsuru Takenaka

Abstract: A non-volatile optical phase shifter is a critical component for enabling large-scale, energy-efficient programmable photonic integrated circuits (PICs) on a silicon (Si) photonics platform. While ferroelectric materials like BaTiO3 offer non-volatile optical phase shift capabilities, their compatibility with complementary metal-oxide-semiconductor (CMOS) fabs is limited. Hence, the search for a n… ▽ More A non-volatile optical phase shifter is a critical component for enabling large-scale, energy-efficient programmable photonic integrated circuits (PICs) on a silicon (Si) photonics platform. While ferroelectric materials like BaTiO3 offer non-volatile optical phase shift capabilities, their compatibility with complementary metal-oxide-semiconductor (CMOS) fabs is limited. Hence, the search for a novel CMOS-compatible ferroelectric material for non-volatile optical phase shifting in Si photonics is of utmost importance. Hafnium zirconium oxide (HZO) is an emerging ferroelectric material discovered in 2011, which exhibits CMOS compatibility due to the utilization of high-k dielectric HfO2 in CMOS transistors. Although extensively studied for ferroelectric transistors and memories, its application in photonics remains relatively unexplored. Here, we show the optical phase shift induced by ferroelectric HZO deposited on a SiN optical waveguide. We observed a negative change in refractive index at a 1.55 um wavelength in the pristine device regardless of the direction of an applied electric filed. We achieved approximately pi phase shift in a 4.5-mm-long device with negligible optical loss. The non-volatile multi-level optical phase shift was confirmed with a persistence of > 10000 s. This phase shift can be attributed to the spontaneous polarization within the HZO film along the external electric field. We anticipate that our results will stimulate further research on optical nonlinear effects, such as the Pockels effect, in ferroelectric HZO. This advancement will enable the development of various devices, including high-speed optical modulators. Consequently, HZO-based programmable PICs are poised to become indispensable in diverse applications, ranging from optical fiber communication and artificial intelligence to quantum computing and sensing. △ Less

Submitted 5 September, 2023; originally announced September 2023.

Breakdown-limited endurance in HZO FeFETs: mechanism and improvement under bipolar stress

Authors: Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi

Abstract: Breakdown is one of main failure mechanisms that limit write endurance of ferroelectric devices using hafnium oxide-based ferroelectric materials. In this study, we investigate the gate current and breakdown characteristics of Hf0.5Zr0.5O2/Si ferroelectric field-effect transistors (FeFETs) by using carrier separation measurements to analyze electron and hole leakage currents during time-dependent… ▽ More Breakdown is one of main failure mechanisms that limit write endurance of ferroelectric devices using hafnium oxide-based ferroelectric materials. In this study, we investigate the gate current and breakdown characteristics of Hf0.5Zr0.5O2/Si ferroelectric field-effect transistors (FeFETs) by using carrier separation measurements to analyze electron and hole leakage currents during time-dependent dielectric breakdown (TDDB) tests. Rapidly increasing substrate hole currents and stress-induced leakage current (SILC)-like electron currents can be observed before the breakdown of the ferroelectric gate insulator of FeFETs. This apparent degradation under voltage stress is recovered and the time-to-breakdown is significantly improved by interrupting the TDDB test with gate voltage pulses with the opposite polarity, suggesting that defect redistribution, rather than defect generation, is responsible for the trigger of hard breakdown. △ Less

Submitted 13 January, 2023; v1 submitted 9 January, 2023; originally announced January 2023.

Comments: 16 pages, 11 figures

Journal ref: Frontiers in Electronics 3 (2022) 1091343

Memory Window in Ferroelectric Field-Effect Transistors: Analytical Approach

Authors: Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi

Abstract: A memory window of ferroelectric field-effect transistors (FeFETs), defined as a separation of the HIGH-state and the LOW-state threshold voltages, is an important measure of the FeFET memory characteristics. In this study, we theoretically investigate the relation between the FeFET memory window and the P-E hysteresis loop of the ferroelectric gate insulator, and derive a compact model explicitly… ▽ More A memory window of ferroelectric field-effect transistors (FeFETs), defined as a separation of the HIGH-state and the LOW-state threshold voltages, is an important measure of the FeFET memory characteristics. In this study, we theoretically investigate the relation between the FeFET memory window and the P-E hysteresis loop of the ferroelectric gate insulator, and derive a compact model explicitly described by material parameters. It is found that the memory window is linearly proportional to the ferroelectric polarization for the small polarization regime, and converges to the limit value of 2 x coercive field x thickness when the remanent polarization is much larger than permittivity x coercive field. We discuss additional factors that possibly influence the memory window in actual devices such as the existence of interlayer (no direct impact), interface charges (invalidity of linear superposition between the ferroelectric and charge-trapping hysteresis), and minor-loop operation (behavior equivalent to the generation of interface charges). △ Less

Submitted 3 November, 2022; originally announced November 2022.

Journal ref: IEEE Transactions on Electron Devices (2022)

Non-volatile hybrid optical phase shifter driven by a ferroelectric transistor

Authors: Rui Tang, Kouhei Watanabe, Masahiro Fujita, Hanzhi Tang, Tomohiro Akazawa, Kasidit Toprasertpong, Shinichi Takagi, Mitsuru Takenaka

Abstract: Optical phase shifters are essential elements in photonic integrated circuits (PICs) and function as a direct interface to program the PIC. Non-volatile phase shifters, which can retain information without a power supply, are highly desirable for low-power static operations. Here a non-volatile optical phase shifter is demonstrated by driving a III-V/Si hybrid metal-oxide-semiconductor (MOS) phase… ▽ More Optical phase shifters are essential elements in photonic integrated circuits (PICs) and function as a direct interface to program the PIC. Non-volatile phase shifters, which can retain information without a power supply, are highly desirable for low-power static operations. Here a non-volatile optical phase shifter is demonstrated by driving a III-V/Si hybrid metal-oxide-semiconductor (MOS) phase shifter with a ferroelectric field-effect transistor (FeFET) operating in the source follower mode. Owing to the various polarization states in the FeFET, multistate non-volatile phase shifts up to 1.25π are obtained with CMOS-compatible operation voltages and low switching energy up to 3.3 nJ. Furthermore, a crossbar array architecture is proposed to simplify the control of non-volatile phase shifters in large-scale PICs and its feasibility is verified by confirming the selective write-in operation of a targeted FeFET with a negligible disturbance to the others. This work paves the way for realizing large-scale non-volatile programmable PICs for emerging computing applications such as deep learning and quantum computing. △ Less

Submitted 10 October, 2023; v1 submitted 11 October, 2022; originally announced October 2022.

Journal ref: Laser & Photonics Reviews, 2300279, 2023

Ultrahigh-sensitivity optical power monitor for Si photonic circuits

Authors: Takaya Ochiai, Kei Sumita, Shuhei Ohno, Stéphane Monfray, Frederic Boeuf, Kasidit Toprasertpong, Shinichi Takagi, Mitsuru Takenaka

Abstract: A phototransistor is a promising candidate as an optical power monitor in Si photonic circuits since the internal gain of photocurrent enables high sensitivity. However, state-of-the-art waveguide-coupled phototransistors suffer from a responsivity of lower than $10^3$ A/W, which is insufficient for detecting very low power light. Here, we present a waveguide-coupled phototransistor consisting of… ▽ More A phototransistor is a promising candidate as an optical power monitor in Si photonic circuits since the internal gain of photocurrent enables high sensitivity. However, state-of-the-art waveguide-coupled phototransistors suffer from a responsivity of lower than $10^3$ A/W, which is insufficient for detecting very low power light. Here, we present a waveguide-coupled phototransistor consisting of an InGaAs ultrathin channel on a Si waveguide working as a gate electrode to increase the responsivity. The Si waveguide gate underneath the InGaAs ultrathin channel enables the effective control of transistor current without optical absorption by the gate metal. As a result, our phototransistor achieved the highest responsivity of approximately $10^6$ A/W among the waveguide-coupled phototransistors, allowing us to detect light of 621 fW propagating in the Si waveguide. The high responsivity and the reasonable response time of approximately 100 $μ$s make our phototransistor promising as an effective optical power monitor in Si photonics circuits. △ Less

Submitted 2 November, 2021; originally announced November 2021.

Si microring resonator crossbar array for on-chip inference and training of optical neural network

Authors: Shuhei Ohno, Kasidit Toprasertpong, Shinichi Takagi, Mitsuru Takenaka

Abstract: Deep learning is one of the most advancing technologies in various fields. Facing the limits of the current electronics platform, optical neural networks (ONNs) based on Si programmable photonic integrated circuits (PICs) have attracted considerable attention as a novel deep learning scheme with optical-domain matrix-vector multiplication (MVM). However, most of the proposed Si programmable PICs f… ▽ More Deep learning is one of the most advancing technologies in various fields. Facing the limits of the current electronics platform, optical neural networks (ONNs) based on Si programmable photonic integrated circuits (PICs) have attracted considerable attention as a novel deep learning scheme with optical-domain matrix-vector multiplication (MVM). However, most of the proposed Si programmable PICs for ONNs have several drawbacks such as low scalability, high power consumption, and lack of frameworks for training. To address these issues, we have proposed a microring resonator (MRR) crossbar array as a Si programmable PIC for an ONN. In this article, we present a prototype of a fully integrated 4 ${\rm \times}$ 4 MRR crossbar array and demonstrated a simple MVM and classification task. Moreover, we propose on-chip backpropagation using the transpose matrix operation of the MRR crossbar array, enabling the on-chip training of the ONN. The proposed ONN scheme can establish a scalable, power-efficient deep learning accelerator for applications in both inference and training tasks. △ Less

Submitted 28 June, 2021; v1 submitted 7 June, 2021; originally announced June 2021.

Comments: 18 pages, 5 figures for main manuscript. 20 pages, 16 figures for supplementary information

Evaluation of polarization characteristics in metal/ferroelectric/semiconductor capacitors and ferroelectric field-effect transistors

Authors: Kasidit Toprasertpong, Kento Tahara, Mitsuru Takenaka, Shinichi Takagi

Abstract: In this study, we propose a measurement technique for evaluating ferroelectric polarization characteristics in ferroelectric field-effect transistors (FeFETs). Different from standard metal/ferroelectric/metal capacitors, the depletion and inversion phenomena in semiconductor substrates have to be carefully taken into account when evaluating the ferroelectric properties using fast voltage sweep as… ▽ More In this study, we propose a measurement technique for evaluating ferroelectric polarization characteristics in ferroelectric field-effect transistors (FeFETs). Different from standard metal/ferroelectric/metal capacitors, the depletion and inversion phenomena in semiconductor substrates have to be carefully taken into account when evaluating the ferroelectric properties using fast voltage sweep as input. The non-equilibrium deep depletion is found to be the limiting factor for the accurate evaluation of ferroelectric properties in metal/ferroelectric/semiconductor capacitors. By connecting the source, drain, and substrate of the FeFET together during the polarization measurement, the deep depletion can be suppressed and the ferroelectricity of the ferroelectric gate can be accurately evaluated. The present technique is a powerful method for capturing the polarization states in FeFETs, enabling new approaches for device characterization and fundamental study, and overcomes the limitation found in the conventional polarization measurement on 2-terminal metal/ferroelectric/semiconductor capacitors. △ Less

Submitted 15 June, 2020; v1 submitted 30 May, 2020; originally announced June 2020.

Journal ref: Applied Physics Letters 116, 242903 (2020)

Microscopic observation of carrier-transport dynamics in quantum-structure solar cells using a time-of-flight technique

Authors: Kasidit Toprasertpong, Naofumi Kasamatsu, Hiromasa Fujii, Tomoyuki Kada, Shigeo Asahi, Yunpeng Wang, Kentaroh Watanabe, Masakazu Sugiyama, Takashi Kita, Yoshiaki Nakano

Abstract: In this study, we propose a carrier time-of-flight technique to evaluate the carrier transport time across a quantum structure in an active region of solar cells. By observing the time-resolved photoluminescence signal with a quantum-well probe inserted under the quantum structure at forward bias, the carrier transport time can be efficiently determined at room temperature. The averaged drift velo… ▽ More In this study, we propose a carrier time-of-flight technique to evaluate the carrier transport time across a quantum structure in an active region of solar cells. By observing the time-resolved photoluminescence signal with a quantum-well probe inserted under the quantum structure at forward bias, the carrier transport time can be efficiently determined at room temperature. The averaged drift velocity shows linear dependence on the internal field, allowing us to estimate the quantum structure as a quasi-bulk material with low effective mobility containing the information of carrier dynamics. We show that this direct and real-time observation is more sensitive to carrier transport than other conventional techniques, providing better insights into microscopic carrier transport dynamics to overcome a device design difficulty. △ Less

Submitted 30 May, 2020; originally announced June 2020.

Journal ref: Applied Physics Letters 107, 043901 (2015)

Generalized Reciprocity Relations in Solar Cells with Voltage-Dependent Carrier Collection: Application to p-i-n Junction Devices

Authors: Kasidit Toprasertpong, Amaury Delamarre, Yoshiaki Nakano, Jean-François Guillemoles, Masakazu Sugiyama

Abstract: Two reciprocity theorems are important for fundamental understanding of the solar cell operation and applications to device evaluation: (1) the carrier-transport reciprocity connecting the dark-carrier injection with the short-circuit photocarrier collection and (2) the optoelectronic reciprocity connecting the electroluminescence with the photovoltaic quantum efficiency at short circuit. These th… ▽ More Two reciprocity theorems are important for fundamental understanding of the solar cell operation and applications to device evaluation: (1) the carrier-transport reciprocity connecting the dark-carrier injection with the short-circuit photocarrier collection and (2) the optoelectronic reciprocity connecting the electroluminescence with the photovoltaic quantum efficiency at short circuit. These theorems, however, fail in devices with thick depletion regions such as p-i-n junction solar cells. By properly linearizing the carrier-transport equation in such devices, we report that the dark-carrier injection is related to the photocarrier collection efficiency at the operating voltage, not at short circuit as suggested in the original theorem. This leads to the general form of the optoelectronic reciprocity relation connecting the electroluminescence with the voltage-dependent quantum efficiency, providing a correct interpretation of the optoelectronic properties of p-i-n junction devices. We also discuss the validity of the well-known relation between the open-circuit voltage and the external luminescence efficiency. The impact of illumination intensity and device parameters on the validity of the reciprocity theorems is quantitatively investigated. △ Less

Submitted 19 February, 2019; originally announced February 2019.

Journal ref: Physical Review Applied 11(2), 024029 (2019)

Investigation and modeling of photocurrent collection process in multiple quantum well solar cells

Authors: Kasidit Toprasertpong, Tomoyuki Inoue, Yoshiaki Nakano, Masakazu Sugiyama

Abstract: Solar cells employing quantum wells can enhance the light absorption but suffer from the difficulty in photogenerated carrier extraction. Here, we analyzed the spectral response and the photocarrier collection mechanism of p-i-n multiple quantum well (MQW) solar cells using the effective-mobility model. Both the simulation and experiment results imply that the spatial profiles of electron and hole… ▽ More Solar cells employing quantum wells can enhance the light absorption but suffer from the difficulty in photogenerated carrier extraction. Here, we analyzed the spectral response and the photocarrier collection mechanism of p-i-n multiple quantum well (MQW) solar cells using the effective-mobility model. Both the simulation and experiment results imply that the spatial profiles of electron and hole densities in MQWs play an important role in the carrier collection process. By considering the recombination increment under illumination, our findings suggest that the concept of the majority/minority carriers is important even in the intrinsic region: photogenerated electrons and holes only experience significant recombination when passing through the hole-rich and electron-rich regions, respectively. This can accurately explain the photocurrent behavior in cells with high background doping, background illumination, and different MQW positions. Based on the experimental findings, we derived analytical formulae for carrier collection efficiency, which directly show the impact of each cell parameter and can be used for the systematic cell design. △ Less

Submitted 30 May, 2020; v1 submitted 9 June, 2017; originally announced June 2017.

Journal ref: Solar Energy Materials and Solar Cells 174 (2018) 146-156