Showing 1–14 of 14 results for author: Wang, K L

Voltage-Controlled Magnetoelectric Devices for Neuromorphic Diffusion Process

Authors: Yang Cheng, Qingyuan Shu, Albert Lee, Haoran He, Ivy Zhu, Haris Suhail, Minzhang Chen, Renhe Chen, Zirui Wang, Hantao Zhang, Chih-Yao Wang, Shan-Yi Yang, Yu-Chen Hsin, Cheng-Yi Shih, Hsin-Han Lee, Ran Cheng, Sudhakar Pamarti, Xufeng Kou, Kang L. Wang

Abstract: Stochastic diffusion processes are pervasive in nature, from the seemingly erratic Brownian motion to the complex interactions of synaptically-coupled spiking neurons. Recently, drawing inspiration from Langevin dynamics, neuromorphic diffusion models were proposed and have become one of the major breakthroughs in the field of generative artificial intelligence. Unlike discriminative models that h… ▽ More Stochastic diffusion processes are pervasive in nature, from the seemingly erratic Brownian motion to the complex interactions of synaptically-coupled spiking neurons. Recently, drawing inspiration from Langevin dynamics, neuromorphic diffusion models were proposed and have become one of the major breakthroughs in the field of generative artificial intelligence. Unlike discriminative models that have been well developed to tackle classification or regression tasks, diffusion models as well as other generative models such as ChatGPT aim at creating content based upon contexts learned. However, the more complex algorithms of these models result in high computational costs using today's technologies, creating a bottleneck in their efficiency, and impeding further development. Here, we develop a spintronic voltage-controlled magnetoelectric memory hardware for the neuromorphic diffusion process. The in-memory computing capability of our spintronic devices goes beyond current Von Neumann architecture, where memory and computing units are separated. Together with the non-volatility of magnetic memory, we can achieve high-speed and low-cost computing, which is desirable for the increasing scale of generative models in the current era. We experimentally demonstrate that the hardware-based true random diffusion process can be implemented for image generation and achieve comparable image quality to software-based training as measured by the Frechet inception distance (FID) score, achieving ~10^3 better energy-per-bit-per-area over traditional hardware. △ Less

Submitted 16 July, 2024; originally announced July 2024.

Ultrafast dynamics of wavelength-sensitive magnons in unconventional compensated semiconducting antiferromagnet

Authors: Hanshen Huang, Tao Qu, Yang Cheng, Lixuan Tai, Christopher Eckberg, Quanjun Pan, Abdullah Alrasheed, Su Kong Chong, Bingqian Dai, Yaochen Li, Qingyuan Shu, Chao-Yao Yang, Jie-Xiang Yu, Gen Yin, Kang L. Wang

Abstract: Antiferromagnet is a promising candidate for the next generation spintronic devices, benefiting from its ultrafast dynamics and spontaneous zero stray field. However, the understanding of their ultrafast spin behaviors is lacking due to the challenges of controlling/detecting the quenched net magnetization. Unconventional compensated semiconducting antiferromagnets present strong time-reversal sym… ▽ More Antiferromagnet is a promising candidate for the next generation spintronic devices, benefiting from its ultrafast dynamics and spontaneous zero stray field. However, the understanding of their ultrafast spin behaviors is lacking due to the challenges of controlling/detecting the quenched net magnetization. Unconventional compensated semiconducting antiferromagnets present strong time-reversal symmetry breaking, spin splitting in the momentum space, and suitable bandgap for optical control/detection. Thus, it is a powerful platform to uncover the ultrafast dynamics of antiferromagnets. Here, we show an exotic wavelength-dependent spin dynamic in the unconventional compensated semiconducting antiferromagnet α-MnTe via time-resolved quadratic magneto-optical Kerr effect measurement, where the probing photon energy of the laser matches its bandgap. This direct excitation and detection of distinct magnon modes reveal varying spin behaviors and time characteristics in a broad temperature range. It originates from the spins triggered at different bands of electronic structures and is depicted in an energy transfer model among electrons, phonons, and magnons. Our study of exotic optical properties in this unconventional semiconducting antiferromagnet fulfills the missing information of spin evolution in the time domain and paves the way for its utilization in ultrafast spintronic devices. △ Less

Submitted 7 May, 2024; originally announced May 2024.

Current manipulation of Giant tunneling altermagnetic resistance in collinear Antiferromagnetic RuO2/MgO/RuO2 sandwich structure

Authors: Shijie Xu, Yan Huang, Farzad Mahfouzi, Zhizhong Zhang, Houyi Cheng, Bingqian Dai, Jinwoong Kim, Wenlong Cai, Kewen Shi, Daoqian Zhu, Zongxia Guo, Caihua Cao, Kun Zhang, Albert Fert, Yue Zhang, Kang L. Wang, Nicholas Kioussis, Weisheng Zhao

Abstract: As an emerging non-volatile memory technology, magnetic random access memory (MRAM) has key features and advantages including non-volatility, high speed, endurance, low power consumption and radiation tolerance. Conventional MRAM utilizes magnetic tunnel junctions (MTJs), which consist of two ferromagnetic layers separated by an insulating tunnel barrier. The orientation of the magnetic layers rep… ▽ More As an emerging non-volatile memory technology, magnetic random access memory (MRAM) has key features and advantages including non-volatility, high speed, endurance, low power consumption and radiation tolerance. Conventional MRAM utilizes magnetic tunnel junctions (MTJs), which consist of two ferromagnetic layers separated by an insulating tunnel barrier. The orientation of the magnetic layers represents the binary data (0 or 1), and electrical resistance changes depending on the relative orientation of these magnetic layers. Despite these advancements, the quest for a swifter, more stable magneto-resistive random-access memory paradigm persists. In this vein, we present a groundbreaking development: room-temperature antiferromagnetic tunnel junctions devoid of any net magnetic moment. Over 200% tunneling altermagnetic resistance (TAR) ratio was measured at RuO2 (110)/MgO/RuO2 (110)/W structure, which is achieved by changing the antiferromagnetic Neel vector of RuO2 with an ultralow current density 2 MA*cm-2. △ Less

Submitted 24 November, 2023; v1 submitted 16 November, 2023; originally announced November 2023.

Comments: Modification required

Spin-flop magnetoresistance in a collinear antiferromagnetic tunnel junction

Authors: Shijie Xu, Zhizhong Zhang, Farzad Mahfouzi, Yan Huang, Houyi Cheng, Bingqian Dai, Wenlong Cai, Kewen Shi, Daoqian Zhu, Zongxia Guo, Caihua Cao, Yongshan Liu, Albert Fert, Nicholas Kioussis, Kang L. Wang, Yue Zhang., Weisheng Zhao

Abstract: Collinear antiferromagnetic (AFM) materials have unique promise of no stray fields, display ultrafast dynamics, and being robust against perturbation filed which motivates the extensive research of antiferromagnetic spintronics. However, the manipulation and detection of antiferromagnetic order remain formidable challenges. Here, we report the electrical detection of colinear antiferromagnetism in… ▽ More Collinear antiferromagnetic (AFM) materials have unique promise of no stray fields, display ultrafast dynamics, and being robust against perturbation filed which motivates the extensive research of antiferromagnetic spintronics. However, the manipulation and detection of antiferromagnetic order remain formidable challenges. Here, we report the electrical detection of colinear antiferromagnetism in all-epitaxial RuO2/MgO/RuO2 three-terminal tunnel junctions (TJ) using spin-flop tunnel anisotropy magnetoresistance (TAMR). We measured a TAMR ratio of around 60% at room temperature, which arises between the parallel and perpendicular configurations of the adjacent collinear AFM state. Furthermore, we carried out angular dependent measurements using this AFM-TJ and showed that the magnitude of anisotropic longitudinal magnetoresistance in the AFM-TJ can be controlled by the direction of magnetic field. We also theoretically found that the colinear antiferromagnetic MTJ may produce a substantially large TAMR ratio as a result of the time-reversal, strong spin orbit coupling (SOC) characteristic of antiferromagnetic RuO2. Our work not only propels antiferromagnetic materials to the forefront of spintronic device innovation but also unveils a novel paradigm for electrically governed antiferromagnetic spintronics, auguring transformative advancements in high-speed, low-energy information devices. △ Less

Submitted 4 November, 2023; originally announced November 2023.

Cryogenic in-memory computing using tunable chiral edge states

Authors: Yuting Liu, Albert Lee, Kun Qian, Peng Zhang, Haoran He, Zheyu Ren, Shun Kong Cheung, Yaoyin Li, Xu Zhang, Zichao Ma, Zhihua Xiao, Guoqiang Yu, Xin Wang, Junwei Liu, Zhongrui Wang, Kang L. Wang, Qiming Shao

Abstract: Energy-efficient hardware implementation of machine learning algorithms for quantum computation requires nonvolatile and electrically-programmable devices, memristors, working at cryogenic temperatures that enable in-memory computing. Magnetic topological insulators are promising candidates due to their tunable magnetic order by electrical currents with high energy efficiency. Here, we utilize mag… ▽ More Energy-efficient hardware implementation of machine learning algorithms for quantum computation requires nonvolatile and electrically-programmable devices, memristors, working at cryogenic temperatures that enable in-memory computing. Magnetic topological insulators are promising candidates due to their tunable magnetic order by electrical currents with high energy efficiency. Here, we utilize magnetic topological insulators as memristors (termed magnetic topological memristors) and introduce a chiral edge state-based cryogenic in-memory computing scheme. On the one hand, the chiral edge state can be tuned from left-handed to right-handed chirality through spin-momentum locked topological surface current injection. On the other hand, the chiral edge state exhibits giant and bipolar anomalous Hall resistance, which facilitates the electrical readout. The memristive switching and reading of the chiral edge state exhibit high energy efficiency, high stability, and low stochasticity. We achieve high accuracy in a proof-of-concept classification task using four magnetic topological memristors. Furthermore, our algorithm-level and circuit-level simulations of large-scale neural networks based on magnetic topological memristors demonstrate a software-level accuracy and lower energy consumption for image recognition and quantum state preparation compared with existing memristor technologies. Our results may inspire further topological quantum physics-based novel computing schemes. △ Less

Submitted 19 September, 2022; originally announced September 2022.

Comments: 33 pages, 12 figures

Room temperature energy-efficient spin-orbit torque switching in wafer-scale all-vdW heterostructure

Authors: Haiyu Wang, Hao Wu, Yingjie Liu, Dongdong Chen, Chandan Pandey, Jialiang Yin, Dahai Wei, Na Lei, Jie Zhang, Haichang Lu, Shuyuan Shi, Peng Li, Albert Fert, Kang L. Wang, Tianxiao Nie, Weisheng Zhao

Abstract: The emergent two-dimensional (2D) ferromagnetic materials with unique magnetic properties have endowed great potential for next-generation spintronic devices with extraordinary merits of high flexibility, easy controllability, and high heretointegrability, which is expected to promote the development of Moore's Law continuously. However, it is extremely challenging to realize magnetic switching wi… ▽ More The emergent two-dimensional (2D) ferromagnetic materials with unique magnetic properties have endowed great potential for next-generation spintronic devices with extraordinary merits of high flexibility, easy controllability, and high heretointegrability, which is expected to promote the development of Moore's Law continuously. However, it is extremely challenging to realize magnetic switching with ultra-low power consumption at room temperature. Here, we demonstrate the room-temperature spin-orbit torque (SOT) driven magnetization switching in a well-epitaxial all-van der Waals (vdW) heterostructure. The topological insulator Bi2Te3 not only helps to elevate the Curie temperature of Fe3GeTe2 (FGT) through interfacial exchange coupling but also works as a spin current source allowing to switch FGT at a low current density of 2.2 * 106 A cm2. A large SOT efficiency of 0.7 is measured at room temperature, and the thickness of FGT is further adjusted to reduce the influence of the thermal contribution on the second-harmonic signal. Furthermore, the temperature and thickness-dependent SOT efficiency prove that the large SOT in our system mainly originates from the nontrivial origin of topological materials. Our experiment has enabled an all-vdW SOT structure and lays a solid foundation for the implementation of room-temperature all-vdW spintronic devices in the future. △ Less

Submitted 28 November, 2021; originally announced November 2021.

Roadmap of spin-orbit torques

Authors: Qiming Shao, Peng Li, Luqiao Liu, Hyunsoo Yang, Shunsuke Fukami, Armin Razavi, Hao Wu, Kang L. Wang, Frank Freimuth, Yuriy Mokrousov, Mark D. Stiles, Satoru Emori, Axel Hoffmann, Johan Åkerman, Kaushik Roy, Jian-Ping Wang, See-Hun Yang, Kevin Garello, Wei Zhang

Abstract: Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and magnetization. More recently interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials hav… ▽ More Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and magnetization. More recently interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials have been explored to achieve a larger SOT efficiency. Recently, holistic design to maximize the performance of SOT devices has extended material research from a nonmagnetic layer to a magnetic layer. The rapid development of SOT has spurred a variety of SOT-based applications. In this Roadmap paper, we first review the theories of SOTs by introducing the various mechanisms thought to generate or control SOTs, such as the spin Hall effect, the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients, magnons, and strain effects. Then, we discuss the materials that enable these effects, including metals, metallic alloys, topological insulators, two-dimensional materials, and complex oxides. We also discuss the important roles in SOT devices of different types of magnetic layers. Afterward, we discuss device applications utilizing SOTs. We discuss and compare three-terminal and two-terminal SOT-magnetoresistive random-access memories (MRAMs); we mention various schemes to eliminate the need for an external field. We provide technological application considerations for SOT-MRAM and give perspectives on SOT-based neuromorphic devices and circuits. In addition to SOT-MRAM, we present SOT-based spintronic terahertz generators, nano-oscillators, and domain wall and skyrmion racetrack memories. This paper aims to achieve a comprehensive review of SOT theory, materials, and applications, guiding future SOT development in both the academic and industrial sectors. △ Less

Submitted 6 May, 2021; v1 submitted 23 April, 2021; originally announced April 2021.

Comments: an invited paper in the "Advances in Magnetics" series

Magnetic Skyrmions for Unconventional Computing

Authors: Sai Li, Wang Kang, Xichao Zhang, Tianxiao Nie, Yan Zhou, Kang L. Wang, Weisheng Zhao

Abstract: Improvements in computing performance have significantly slowed down over the past few years owing to the intrinsic limitations of computing hardware. However, the demand for data computing has increased exponentially. To solve this problem, tremendous attention has been focused on the continuous scaling of Moore's Law as well as the advanced non-von Neumann computing architecture. A rich variety… ▽ More Improvements in computing performance have significantly slowed down over the past few years owing to the intrinsic limitations of computing hardware. However, the demand for data computing has increased exponentially. To solve this problem, tremendous attention has been focused on the continuous scaling of Moore's Law as well as the advanced non-von Neumann computing architecture. A rich variety of unconventional computing paradigms has been raised with the rapid development of nanoscale devices. Magnetic skyrmions, spin swirling quasiparticles, have been endowed with great expectations for unconventional computing due to their potential as the smallest information carriers by exploiting their physics and dynamics. In this paper, we provide an overview of the recent progress of skyrmion-based unconventional computing from a joint device-application perspective. This paper aims to build up a panoramic picture, analyze the remaining challenges, and most importantly to shed light on the outlook of skyrmion based unconventional computing for interdisciplinary researchers. △ Less

Submitted 24 November, 2020; v1 submitted 23 November, 2020; originally announced November 2020.

Comments: 9 Figure, 1 Table

Journal ref: Mater. Horiz. 8, 854 (2021)

Picosecond spin-orbit torque switching of ferrimagnets

Authors: Hao Wu, Deniz Turan, Quanjun Pan, Guanjie Wu, Seyed Armin Razavi, Nezih Tolga Yardimci, Zongzhi Zhang, Mona Jarrahi, Kang L. Wang

Abstract: Spintronics provides an efficient platform for realizing non-volatile memory and logic devices. In these systems, data is stored in the magnetization of magnetic materials, and magnetization is switched in the writing process. In conventional spintronic devices, ferromagnetic materials are used which have a magnetization dynamics timescale of around the nanoseconds, setting a limit for the switchi… ▽ More Spintronics provides an efficient platform for realizing non-volatile memory and logic devices. In these systems, data is stored in the magnetization of magnetic materials, and magnetization is switched in the writing process. In conventional spintronic devices, ferromagnetic materials are used which have a magnetization dynamics timescale of around the nanoseconds, setting a limit for the switching speed. Increasing the magnetization switching speed has been one of the challenges in spintronic research. In this work we take advantage of the ultrafast magnetization dynamics in ferrimagnetic materials instead of ferromagnets, and we use femtosecond laser pulses and a photoconductive Auston switch to create picosecond current pulses for switching the ferrimagnet. By anomalous Hall and magneto-optic Kerr (MOKE) measurement, we demonstrate the robust picosecond SOT driven magnetization switching of ferrimagnetic GdFeCo. The time-resolved MOKE shows more than 50 GHz magnetic resonance frequency of GdFeCo, indicating faster than 20 ps spin dynamics and tens of picosecond SOT switching speed. Our work provides a promising route to realize picosecond operation speed for non-volatile magnetic memory and logic applications. △ Less

Submitted 20 December, 2019; originally announced December 2019.

Femtosecond control of terahertz spin-charge conversion in ferromagnetic heterostructures

Authors: Xiaojun Wu, Tianxiao Nie, Bo Wang, Meng Xiao, Deyin Kong, Chandan Pandey, Yang Gao, Lianggong Wen, Weisheng Zhao, Cunjun Ruan, Jungang Miao, Li Wang, Yutong Li, Kang L. Wang

Abstract: Employing electron spin instead of charge to develop spintronic devices holds the merits of low-power consumption in information technologies. Meanwhile, the demand for increasing speed in spintronics beyond current CMOS technology has further triggered intensive researches for ultrafast control of spins even up to unprecedent terahertz regime. The femtosecond laser has been emerging as a potentia… ▽ More Employing electron spin instead of charge to develop spintronic devices holds the merits of low-power consumption in information technologies. Meanwhile, the demand for increasing speed in spintronics beyond current CMOS technology has further triggered intensive researches for ultrafast control of spins even up to unprecedent terahertz regime. The femtosecond laser has been emerging as a potential technique to generate an ultrafast spin-current burst for magnetization manipulation. However, there is a great challenge to establish all-optical control and monitor of the femtosecond transient spin current. Deep insights into the physics and mechanism are extremely essential for the technique. Here, we demonstrate coherently nonthermal excitation of femtosecond spin-charge current conversion parallel to the magnetization in W/CoFeB/Pt heterostructures driven by linearly polarized femtosecond laser pulses. Through systematical investigation we observe the terahertz emission polarization depends on both the magnetization direction and structural asymmetry. We attribute this phenomenon of the terahertz generation parallel to the magnetization induced by linearly polarized femtosecond laser pulses probably to inverse spin-orbit torque effect. Our work not only is beneficial to the deep understanding of spin-charge conversion and spin transportation, but also helps develop novel on-chip terahertz opto-spintronic devices. △ Less

Submitted 1 December, 2018; v1 submitted 14 September, 2018; originally announced September 2018.

Comments: 34 pages, 10 figures

Field-Free Switching of Perpendicular Magnetic Tunnel Junction via Voltage-Gated Spin Hall Effect for Low-Power Spintronic Memory

Authors: Shouzhong Peng, Xiang Li, Wang Kang, He Zhang, Lezhi Wang, Zilu Wang, Zhaohao Wang, Youguang Zhang, Kang L. Wang, Weisheng Zhao

Abstract: Spin Hall effect (SHE) and voltage-controlled magnetic anisotropy (VCMA) are two promising methods for low-power electrical manipulation of magnetization. Recently, magnetic field-free switching of perpendicular magnetization through SHE has been reported with the aid of an exchange bias from an antiferromagnetic IrMn layer. In this letter, we experimentally demonstrate that the IrMn/CoFeB/MgO str… ▽ More Spin Hall effect (SHE) and voltage-controlled magnetic anisotropy (VCMA) are two promising methods for low-power electrical manipulation of magnetization. Recently, magnetic field-free switching of perpendicular magnetization through SHE has been reported with the aid of an exchange bias from an antiferromagnetic IrMn layer. In this letter, we experimentally demonstrate that the IrMn/CoFeB/MgO structure exhibits a VCMA effect of 39 fJ/Vm, which is comparable to that of the Ta/CoFeB/MgO structure. Magnetization dynamics under a combination of the SHE and VCMA are modeled and simulated. It is found that, by applying a voltage of 1.5 V, the critical SHE switching current can be decreased by 10 times owing to the VCMA effect, leading to low-power operations. Furthermore, a high-density spintronic memory structure can be built with multiple magnetic tunnel junctions (MTJs) located on a single IrMn strip. Through hybrid CMOS/MTJ simulations, we demonstrate that fast-speed write operations can be achieved with power consumption of only 8.5 fJ/bit. These findings reveal the possibility to realize high-density and low-power spintronic memory manipulated by voltage-gated SHE. △ Less

Submitted 29 April, 2018; originally announced April 2018.

Comments: 4 pages, 4 figures

Strain-mediated spin-orbit torque switching for magnetic memory

Authors: Qianchang Wang, John Domann, Guoqiang Yu, Anthony Barra, Kang L. Wang, Gregory P. Carman

Abstract: Spin-orbit torque (SOT) represents an energy efficient method to control magnetization in magnetic memory devices. However, deterministically switching perpendicular memory bits usually requires the application of an additional bias field for breaking lateral symmetry. Here we present a new approach of field-free deterministic perpendicular switching using a strain-mediated SOT switching method. T… ▽ More Spin-orbit torque (SOT) represents an energy efficient method to control magnetization in magnetic memory devices. However, deterministically switching perpendicular memory bits usually requires the application of an additional bias field for breaking lateral symmetry. Here we present a new approach of field-free deterministic perpendicular switching using a strain-mediated SOT switching method. The strain-induced magnetoelastic anisotropy breaks the lateral symmetry, and the resulting symmetry-breaking is controllable. A finite element model and a macrospin model are used to numerically simulate the strain-mediated SOT switching mechanism. The results show that a relatively small voltage (${\pm}0.5$ V) along with a modest current ($3.5 \times 10^{7} A/cm^{2}$) can produce a 180° perpendicular magnetization reversal. The switching direction (up or down) is dictated by the voltage polarity (positive or negative) applied to the piezoelectric layer in the magnetoelastic/heavy metal/piezoelectric heterostructure. The switching speed can be as fast as 10 GHz. More importantly, this control mechanism can be potentially implemented in a magnetic random-access memory system with small footprint, high endurance and high tunnel magnetoresistance (TMR) readout ratio. △ Less

Submitted 8 December, 2017; originally announced February 2018.

Journal ref: Phys. Rev. Applied 10, 034052 (2018)

Spintronic nano-scale harvester of broadband microwave energy

Authors: Bin Fang, Mario Carpentieri, Steven Louis, Vasyl Tiberkevich, Andrei Slavin, Ilya N. Krivorotov, Riccardo Tomasello, Anna Giordano, Hongwen Jiang, Jialin Cai, Yaming Fan, Zehong Zhang, Baoshun Zhang, Jordan A. Katine, Kang L. Wang, Pedram Khalili Amiri, Giovanni Finocchio, Zhongming Zeng

Abstract: The harvesting of ambient radio-frequency (RF) energy is an attractive and clean way to realize the idea of self-powered electronics. Here we present a design for a microwave energy harvester based on a nanoscale spintronic diode (NSD). This diode contains a magnetic tunnel junction with a canted magnetization of the free layer, and can convert RF energy over the frequency range from 100 MHz to 1.… ▽ More The harvesting of ambient radio-frequency (RF) energy is an attractive and clean way to realize the idea of self-powered electronics. Here we present a design for a microwave energy harvester based on a nanoscale spintronic diode (NSD). This diode contains a magnetic tunnel junction with a canted magnetization of the free layer, and can convert RF energy over the frequency range from 100 MHz to 1.2 GHz into DC electric voltage. An attractive property of the developed NSD is the generation of an almost constant DC voltage in a wide range of frequencies of the external RF signals. We further show that the developed NSD provides sufficient DC voltage to power a low-power nanodevice - a black phosphorus photo-sensor. Our results demonstrate that the developed NSD could pave the way for using spintronic detectors as building blocks for self-powered nano-systems, such as implantable biomedical devices, wireless sensors, and portable electronics. △ Less

Submitted 30 March, 2018; v1 submitted 1 January, 2018; originally announced January 2018.

Comments: 29 pages,4 main figures

Journal ref: Physical Review APPLIED 11, 014022 (2019)

Stochastic Dynamics and Combinatorial Optimization

Authors: Igor V. Ovchinnikov, Kang L. Wang

Abstract: Natural dynamics is often dominated by sudden nonlinear processes such as neuroavalanches, gamma-ray bursts, solar flares \emph{etc}. that exhibit scale-free statistics much in the spirit of the logarithmic Ritcher scale for earthquake magnitudes. On phase diagrams, stochastic dynamical systems (DSs) exhibiting this type of dynamics belong to the finite-width phase (N-phase for brevity) that prece… ▽ More Natural dynamics is often dominated by sudden nonlinear processes such as neuroavalanches, gamma-ray bursts, solar flares \emph{etc}. that exhibit scale-free statistics much in the spirit of the logarithmic Ritcher scale for earthquake magnitudes. On phase diagrams, stochastic dynamical systems (DSs) exhibiting this type of dynamics belong to the finite-width phase (N-phase for brevity) that precedes ordinary chaotic behavior and that is known under such names as noise-induced chaos, self-organized criticality, dynamical complexity \emph{etc.} Within the recently formulated approximation-free supersymemtric theory of stochastics, the N-phase can be roughly interpreted as the noise-induced "overlap" between integrable and chaotic deterministic dynamics. As a result, the N-phase dynamics inherits the properties of the both. Here, we analyze this unique set of properties and conclude that the N-phase DSs must naturally be the most efficient optimizers: on one hand, N-phase DSs have integrable flows with well-defined attractors that can be associated with candidate solutions and, on the other hand, the noise-induced attractor-to-attractor dynamics in the N-phase is effectively chaotic or a-periodic so that a DS must avoid revisiting solutions/attractors thus accelerating the search for the best solution. Based on this understanding, we propose a method for stochastic dynamical optimization using the N-phase DSs. This method can be viewed as a hybrid of the simulated and chaotic annealing methods. Our proposition can result in a new generation of hardware devices for efficient solution of various search and/or combinatorial optimization problems. △ Less

Submitted 22 June, 2016; v1 submitted 30 April, 2015; originally announced May 2015.

Comments: revtex4-1