IMPRESS targets the development of a technological injection moulding platform for serial product... more IMPRESS targets the development of a technological injection moulding platform for serial production of plastic components incorporating micro or nano scale functional features. The platform is based on most advanced facilities divided in three modules: -tool manufacturing, involving different technologies of micro-nano direct manufacturing, from top-down to bottom-up such as self-assembling, -injection moulding, including equipments fitted with innovative hardware technologies to improve replication quality and capability, -intelligence, dedicated to advanced process control and online metrology integration.
In this paper we demonstrate the feasibility of an in-line, non-destructive method, thermal wave ... more In this paper we demonstrate the feasibility of an in-line, non-destructive method, thermal wave imaging, to characterize the formation of titanium disilicide on narrow lines. The observation of thermal-wave signals and images allows us to distinguish the formation and structure of the metastable, high-resistivity, C49 phase and the equilibrium, low-resistivity C54 phase of the disilicide. Patterned wafers, having linewidths in
Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III, 1996
ABSTRACT In this paper we demonstrate the feasibility of an in-line, non-destructive method, ther... more ABSTRACT In this paper we demonstrate the feasibility of an in-line, non-destructive method, thermal wave imaging, to characterize the formation of titanium disilicide on narrow lines. The observation of thermal-wave signals and images allows us to distinguish the formation and structure of the metastable, high-resistivity, C49 phase and the equilibrium, low-resistivity C54 phase of the disilicide. Patterned wafers, having linewidths in the range of 1.5 to 0.4 micrometer were used to study the effect of rapid thermal anneal conditions and linewidth on disilicide formation. The transformation temperature of C49 to paper we demonstrate the feasibility of an in-line, non-destructive method, thermal wave imaging, to characterize C54 disilicide during a 20 second isothermal anneal was found to increase by more than 50 degrees Celsius when decreasing the linewidth to 0.4 micrometer.
Increasing solar cell efficiency by reducing of the spectral mismatch between solar spectrum and ... more Increasing solar cell efficiency by reducing of the spectral mismatch between solar spectrum and cell quantum efficiency is addressed in this article, which describes our work on the down-conversion and quantum-cutting spectroscopic processes by using rare-earth doped YAG nanoparticles. These nanoparticles are synthesized with different concentrations of dopants to optimize luminescence and quantum cutting efficiencies. Finally, we will present results on the incorporation of selected material into the encapsulating layer of c-Si based PV-modules. The effect of downconversion is demonstrated through the increase of photocurrent of encapsulated silicon solar cells
The ternary bonds Ho12Mo6S8 (1), ErRh4Sn3,6 (2), and ErRh4B4 (3), were prepared and investigated,... more The ternary bonds Ho12Mo6S8 (1), ErRh4Sn3,6 (2), and ErRh4B4 (3), were prepared and investigated, using a 3He-4He mix-cooling machine to create a 100 mK temperature area in which superconductivity and ferromagnetic order can coexist. Direct Current Magnetization (DCMM's) and Resistance Measurements (RM's), were carried out using a SQUID. Crystals of (2) were prepared from Er:Rh melt ratios of 1:1 (a), and 1:2 (b). The DCMM's show ferromagnetic order at temperatures Tc2 of 0,75 K, and 0.52 K. The RM's show superconductivity for only a small part of the (a)-crystals at a temperature Tc1=0.5 K, but a complete superconductivity for the (b)-crystals at Tc1=1.07 K. Temperatures for which the crystals become normal again are 0.66 K (a), and 0.38 K (RM) and 0.52 K (DCMM) for (b). A method to reduce magnetization changes to absolute values for susceptibility was determined. For preparation (3) a Tc1=8.7 K is found.
IMPRESS targets the development of a technological injection moulding platform for serial product... more IMPRESS targets the development of a technological injection moulding platform for serial production of plastic components incorporating micro or nano scale functional features. The platform is based on most advanced facilities divided in three modules: -tool manufacturing, involving different technologies of micro-nano direct manufacturing, from top-down to bottom-up such as self-assembling, -injection moulding, including equipments fitted with innovative hardware technologies to improve replication quality and capability, -intelligence, dedicated to advanced process control and online metrology integration.
In this paper we demonstrate the feasibility of an in-line, non-destructive method, thermal wave ... more In this paper we demonstrate the feasibility of an in-line, non-destructive method, thermal wave imaging, to characterize the formation of titanium disilicide on narrow lines. The observation of thermal-wave signals and images allows us to distinguish the formation and structure of the metastable, high-resistivity, C49 phase and the equilibrium, low-resistivity C54 phase of the disilicide. Patterned wafers, having linewidths in
Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III, 1996
ABSTRACT In this paper we demonstrate the feasibility of an in-line, non-destructive method, ther... more ABSTRACT In this paper we demonstrate the feasibility of an in-line, non-destructive method, thermal wave imaging, to characterize the formation of titanium disilicide on narrow lines. The observation of thermal-wave signals and images allows us to distinguish the formation and structure of the metastable, high-resistivity, C49 phase and the equilibrium, low-resistivity C54 phase of the disilicide. Patterned wafers, having linewidths in the range of 1.5 to 0.4 micrometer were used to study the effect of rapid thermal anneal conditions and linewidth on disilicide formation. The transformation temperature of C49 to paper we demonstrate the feasibility of an in-line, non-destructive method, thermal wave imaging, to characterize C54 disilicide during a 20 second isothermal anneal was found to increase by more than 50 degrees Celsius when decreasing the linewidth to 0.4 micrometer.
Increasing solar cell efficiency by reducing of the spectral mismatch between solar spectrum and ... more Increasing solar cell efficiency by reducing of the spectral mismatch between solar spectrum and cell quantum efficiency is addressed in this article, which describes our work on the down-conversion and quantum-cutting spectroscopic processes by using rare-earth doped YAG nanoparticles. These nanoparticles are synthesized with different concentrations of dopants to optimize luminescence and quantum cutting efficiencies. Finally, we will present results on the incorporation of selected material into the encapsulating layer of c-Si based PV-modules. The effect of downconversion is demonstrated through the increase of photocurrent of encapsulated silicon solar cells
The ternary bonds Ho12Mo6S8 (1), ErRh4Sn3,6 (2), and ErRh4B4 (3), were prepared and investigated,... more The ternary bonds Ho12Mo6S8 (1), ErRh4Sn3,6 (2), and ErRh4B4 (3), were prepared and investigated, using a 3He-4He mix-cooling machine to create a 100 mK temperature area in which superconductivity and ferromagnetic order can coexist. Direct Current Magnetization (DCMM's) and Resistance Measurements (RM's), were carried out using a SQUID. Crystals of (2) were prepared from Er:Rh melt ratios of 1:1 (a), and 1:2 (b). The DCMM's show ferromagnetic order at temperatures Tc2 of 0,75 K, and 0.52 K. The RM's show superconductivity for only a small part of the (a)-crystals at a temperature Tc1=0.5 K, but a complete superconductivity for the (b)-crystals at Tc1=1.07 K. Temperatures for which the crystals become normal again are 0.66 K (a), and 0.38 K (RM) and 0.52 K (DCMM) for (b). A method to reduce magnetization changes to absolute values for susceptibility was determined. For preparation (3) a Tc1=8.7 K is found.
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