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ORCIDXiaohua Ma
This is just a disambiguation page, and is not intended to be the bibliography of an actual person. Any publication listed on this page has not been assigned to an actual author yet. If you know the true author of one of the publications listed below, you are welcome to contact us.
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2020 – today
- 2024
[j23]Sirui An, Minhan Mi, Pengfei Wang, Sijia Liu, Qing Zhu, Meng Zhang, Zhihong Chen, Jielong Liu, Siyin Guo, Can Gong, Xiaohua Ma, Yue Hao:
A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness. Sci. China Inf. Sci. 67(1) (2024)- [j22]Qing Zhu, Zhenni Wang, Yuxiang Wei, Ling Yang, Xiaoli Lu, Jiejie Zhu, Peng Zhong, Yimin Lei, Xiaohua Ma:
Realtime observation of "spring fracture" like AlGaN/GaN HEMT failure under bias. Sci. China Inf. Sci. 67(1) (2024) - [j21]Chunzhou Shi, Ling Yang, Meng Zhang, Hao Lu, Mei Wu, Bin Hou, Xuerui Niu, Qian Yu, Wenliang Liu, Wenze Gao, Xiaohua Ma, Yue Hao:
Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure. Sci. China Inf. Sci. 67(4) (2024) - [j20]Wen Hong, Chao Zhang, Fang Zhang, Xuefeng Zheng, Xiaohua Ma, Yue Hao:
Performance improvement of β-Ga2O3 SBD-based rectifier with embedded microchannels in ceramic substrate. Sci. China Inf. Sci. 67(5) (2024) - [j19]Yahui Feng, Hongxia Guo, Wuying Ma, Jiawen Hu, Xiaoping Ouyang, Jinxin Zhang, Fengqi Zhang, Hong Zhang, Ruxue Bai, Xiaohua Ma, Yue Hao:
Effect of 60Coγ ray radiation on electrical properties of SiGe HBTs at low temperatures. Microelectron. J. 144: 106058 (2024) - [c10]Min Zhou, Hong Zhou, Mengwei Si, Guangjie Gao, Xiaojin Chen, Xiaoxiao Zhu, Kui Dang, Peijun Ma, Xiaohua Ma, Xuefeng Zheng, Zhihong Liu, Jincheng Zhang, Yuhao Zhang, Yue Hao:
71 GHz-fmax β-Ga2O3-on-SiC RF Power MOSFETs with Record Pout=3.1 W/mm and PAE=50.8% at 2 GHz, Pout= 2.3 W/mm at 4 GHz, and Low Microwave Noise Figure. VLSI Technology and Circuits 2024: 1-2 - 2023
- [j18]Yilin Chen, Qing Zhu, Jiejie Zhu, Minhan Mi, Meng Zhang, Yuwei Zhou, Ziyue Zhao, Xiaohua Ma, Yue Hao:
Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light. Sci. China Inf. Sci. 66(2) (2023) - [c9]Zhenkai Ding
, Chupeng Yi, Yang Lu, Xiaohua Ma:
A Ka-band Wideband Power Synthesis Power Amplifier MMIC Utilizing Advanced 0.15μm GaN HEMT Technology. ICNCC 2023: 162-167 - [c8]Jielong Liu, Chang Wu, Tao Guo, Kai Wang, Chengcheng Li, An Liu, Rui Zhou, Zhen Huang, Jiayan Wu, Minhan Mi, Xiaohua Ma:
Millimeter-Wave AlGaN/GaN MIS-HEMTs with Multiple T-Gate Technology. ICTA 2023: 1-2 - 2022
- [j17]Siyu Liu, Xiaohua Ma, Jiejie Zhu, Minhan Mi, Jingshu Guo, Jielong Liu, Yilin Chen, Qing Zhu, Ling Yang, Yue Hao:
Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method. Sci. China Inf. Sci. 65(10) (2022) - [j16]Yuchen Wang, Xiaohua Ma, Yang Lu, Bochao Zhao, Ziyue Zhao, Chupeng Yi, Ling Yang, Jiangyi Shi, Yue Hao:
A Broadband Amplifier With Flat Bandwidth for Modulator and Measurement Driver Circuits. IEEE Trans. Instrum. Meas. 71: 1-9 (2022) - [c7]Hao Lu, Likun Zhou, Longge Deng, Ling Yang, Bin Hou, Xiaohua Ma, Yue Hao:
First Demonstration of High PAE Performance Using InGaN Channel HEMT for 5G RF Applications. ICTA 2022: 30-31 - [c6]Pengfei Wang, Minhan Mi, Sirui An, Xiang Du, Xiaohua Ma, Yue Hao:
A Novel Concept of using Double Threshold Voltage Coupling to Improve the linearity of AlGaN/GaN HEMTs for millimeter-wave applications. ICTA 2022: 114-115 - [i2]Shuiying Xiang, Yuechun Shi, Xingxing Guo, Yahui Zhang, Hongji Wang, Dianzhuang Zheng, Ziwei Song, Yanan Han, Shuang Gao, Shihao Zhao, Biling Gu, Hailing Wang, Xiaojun Zhu, Lianping Hou, Xiangfei Chen, Wanhua Zheng, Xiaohua Ma, Yue Hao:
Hardware-algorithm collaborative computing with photonic spiking neuron chip based on integrated Fabry-Pérot laser with saturable absorber. CoRR abs/2204.08362 (2022) - [i1]Xiaohua Ma, Xiangru Li, Ali Luo, Jinqu Zhang, Hui Li:
Galaxy Image Classification using Hierarchical Data Learning with Weighted Sampling and Label Smoothing. CoRR abs/2212.10081 (2022) - 2021
- [j15]Yue Hao, Shuiying Xiang, Genquan Han, Jincheng Zhang, Xiaohua Ma, Zhangming Zhu, Xingxing Guo, Yahui Zhang, Yanan Han, Ziwei Song, Yan Liu, Ling Yang, Hong Zhou, Jiangyi Shi, Wei Zhang, Min Xu, Weisheng Zhao, Biao Pan, Yangqi Huang, Qi Liu, Yimao Cai, Jian Zhu, Xin Ou, Tiangui You, Huaqiang Wu, Bin Gao, Zhiyong Zhang, Guoping Guo, Yonghua Chen, Yong Liu, Xiangfei Chen, Chunlai Xue, Xingjun Wang, Lixia Zhao, Xihua Zou, Lianshan Yan, Ming Li:
Recent progress of integrated circuits and optoelectronic chips. Sci. China Inf. Sci. 64(10) (2021) - [j14]Xiaohua Ma, Chengming Huang:
Recovery of high order accuracy in spectral collocation method for linear Volterra integral equations of the third-kind with non-smooth solutions. J. Comput. Appl. Math. 392: 113458 (2021) - [j13]Xiaohua Ma, Chengming Huang:
An accurate Legendre collocation method for third-kind Volterra integro-differential equations with non-smooth solutions. Numer. Algorithms 88(4): 1571-1593 (2021) - [c5]Hao Lu, Xiaohua Ma, Bin Hou, Ling Yang, Teng Huo, Zeyan Si, Yue Hao:
Novel Selective Area Recessed Regrowth-free Ohmic Contacts to High Al-content Barrier. ICTA 2021: 78-79 - 2020
- [j12]Qing Zhu, Xiaohua Ma, Bin Hou, Mei Wu, Jiejie Zhu, Ling Yang, Meng Zhang, Yue Hao:
Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature. IEEE Access 8: 35520-35528 (2020) - [j11]Yin Yang, Emran Tohidi, Xiaohua Ma, Sujuan Kang:
Rigorous convergence analysis of Jacobi spectral Galerkin methods for Volterra integral equations with noncompact kernels. J. Comput. Appl. Math. 366 (2020) - [c4]Yingzhe Wang, Xuefeng Zheng, Jiaduo Zhu, Shengrui Xu, Xiaohua Ma, Jincheng Zhang, Yue Hao, Linlin Xu, Jiangnan Dai, Peixian Li:
Evolution of Defect in AlGaN-based Deep Ultraviolet Light Emitting Diodes During Electrical Stress. IRPS 2020: 1-4
2010 – 2019
- 2018
- [c3]Jiejie Zhu, Bin Hou, Lixiang Chen, Qing Zhu, Ling Yang, Xiaowei Zhou, Peng Zhang, Xiaohua Ma, Yue Hao:
Threshold voltage shift and interface/border trapping mechanism in Al2O3/AlGaN/GaN MOS-HEMTs. IRPS 2018: 1 - 2016
- [j10]Bochao Zhao, Peijun Ma, Yang Lu, Jiaxin Zheng, Hengshuang Zhang, Zuo-Chen Shi, Xiaohua Ma, Yue Hao:
A novel graphical method for dual-frequency two sections transformer. IEICE Electron. Express 13(12): 20160509 (2016) - 2015
- [j9]Xiaohua Ma, Chengming Huang, Xin Niu:
Convergence analysis of spectral collocation methods for a class of weakly singular Volterra integral equations. Appl. Math. Comput. 250: 131-144 (2015) - [j8]Bochao Zhao, Xiaohua Ma, Yang Lu, Jiaxin Zheng, Wenzhe Han, Honghe Zhang, Yanlong Zhang, Yue Hao:
A 5-8 GHz wideband 100 W internally matched GaN power amplifier. IEICE Electron. Express 12(6): 20150172 (2015) - [j7]Minhan Mi, Yunlong He, Bin Hou, Meng Zhang, Zuo-Chen Shi, Xiaohua Ma, Peixian Li, Yue Hao:
The characteristics of fluorinated gate dielectric AlGaN/GaN MIS-HEMT. IEICE Electron. Express 12(24): 20150943 (2015) - [j6]Lixiang Xu, Bin Luo, Yuanyan Tang, Xiaohua Ma:
An efficient multiple kernel learning in reproducing kernel Hilbert spaces (RKHS). Int. J. Wavelets Multiresolution Inf. Process. 13(2): 1550008:1-1550008:13 (2015) - 2014
- [j5]Peng Zhang, Yuan Wang, Xing Zhang, Xiaohua Ma, Yue Hao:
Novel silicon-controlled rectifier (SCR) for digital and high-voltage ESD power supply clamp. Sci. China Inf. Sci. 57(2): 1-6 (2014) - [j4]Wei-Wei Chen, Xiaohua Ma, Bin Hou, Sheng-Lei Zhao, Jiejie Zhu, Jincheng Zhang, Yue Hao:
Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress. Microelectron. Reliab. 54(6-7): 1293-1298 (2014) - 2013
- [j3]Xiaohua Ma, Chengming Huang:
Numerical solution of fractional integro-differential equations by a hybrid collocation method. Appl. Math. Comput. 219(12): 6750-6760 (2013) - [j2]Xiaohua Ma, Zhenyu Wang, Yuanqiang Cai, Changjie Xu:
Mixed Boundary-Value Analysis of Rocking Vibrations of an Elastic Strip Foundation on Elastic Soil with Saturated Substrata. J. Appl. Math. 2013: 124782:1-124782:10 (2013)
2000 – 2009
- 2005
- [c2]Haixia Gao, Yintang Yang, Xiaohua Ma, Gang Dong:
Testing for Resistive Shorts in FPGA Interconnects. ISQED 2005: 159-163 - [c1]Haixia Gao, Yintang Yang, Xiaohua Ma, Gang Dong:
Analysis of the Effect of LUT Size on FPGA Area and Delay Using Theoretical Derivations. ISQED 2005: 370-374 - 2003
- [j1]Xiaohua Ma, Geng-Sheng Kuo:
Optical switching technology comparison: optical MEMS vs. other technologies. IEEE Commun. Mag. 41(11) (2003)
Coauthor Index
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