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ORCIDDong-Uk Lee
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2020 – today
- 2024
[c13]Won-Kyung Baek, Moung-Jin Lee, Jun-Ho Lee, Keunyong Kim, Jingyo Lee, Geun-Ho Kwak, Dong-Uk Lee, Sung-Hwan Park, Joo-Hyung Ryu:
Measurement of Long-Term Tidal Flat Area Variation Using Multi-Temporal Sentinel-1 at Nakdong River Estuary Via Tidal and Seasonal Effect Mitigation. IGARSS 2024: 6065-6068- 2022
- [c12]Myeong-Jae Park, Ho Sung Cho, Tae-Sik Yun, Sangjin Byeon, Young Jun Koo, Sang-Sic Yoon, Dong-Uk Lee, Seokwoo Choi, Ji Hwan Park, Jinhyung Lee, Kyungjun Cho, Junil Moon, Byung Kuk Yoon, Young Jun Park, Sangmuk Oh, Chang Kwon Lee, Tae-Kyun Kim, Seong-Hee Lee, Hyun-Woo Kim, Yucheon Ju, Seung-Kyun Lim, Seung Geun Baek, Kyo Yun Lee, Sang Hun Lee, Woo Sung We, Seungchan Kim, Yongseok Choi, Seong-Hak Lee, Seung Min Yang, Gunho Lee, In-Keun Kim, Younghyun Jeon, Jae-Hyung Park, Jong Chan Yun, Chanhee Park, Sun-Yeol Kim, Sungjin Kim, Dong-Yeol Lee, Su-Hyun Oh, Taejin Hwang, Junghyun Shin, Yunho Lee, Hyunsik Kim, Jaeseung Lee, Youngdo Hur, Sangkwon Lee, Jieun Jang, Junhyun Chun, Joohwan Cho:
A 192-Gb 12-High 896-GB/s HBM3 DRAM with a TSV Auto-Calibration Scheme and Machine-Learning-Based Layout Optimization. ISSCC 2022: 444-446 - 2021
- [c11]Dong-Uk Lee, Bor-Doou Rong, Kyu-Hyoun Kim:
Session 25 Overview: DRAM Memory Subcommittee. ISSCC 2021: 342-343 - 2020
- [j4]Dongkyun Kim, Kibong Koo, Yongmi Kim, Dong-Uk Lee, Jaejin Lee, Ki Hun Kwon, Byeongchan Choi, Hongjung Kim, Sanghyun Ku, Jong-Sam Kim, Seungwook Oh, Minsu Park, Dain Im, Yongsung Lee, Mingyu Park, Jonghyuck Choi, Junhyun Chun, Kyowon Jin, Sungchun Jang, Jun-Yong Song, Hankyu Chi, Geunho Choi, Sunmyung Choi, Changhyun Kim, Minsik Han:
A 1.1-V 10-nm Class 6.4-Gb/s/Pin 16-Gb DDR5 SDRAM With a Phase Rotator-ILO DLL, High-Speed SerDes, and DFE/FFE Equalization Scheme for Rx/Tx. IEEE J. Solid State Circuits 55(1): 167-177 (2020) - [c10]Dong-Uk Lee, Ho Sung Cho, Jihwan Kim, Young Jun Ku, Sangmuk Oh, Chul Dae Kim, Hyun Woo Kim, Wooyoung Lee, Tae-Kyun Kim, Tae Sik Yun, Min Jeong Kim, SeungGyeon Lim, Seong Hee Lee, Byung Kuk Yun, Jun Il Moon, Ji Hwan Park, Seokwoo Choi, Young Jun Park, Chang Kwon Lee, Chunseok Jeong, Jae-Seung Lee, Sang Hun Lee, Woo Sung We, Jong Chan Yun, Doobock Lee, Junghyun Shin, Seungchan Kim, Junghwan Lee, Jiho Choi, Yucheon Ju, Myeong-Jae Park, Kang Seol Lee, Youngdo Hur, Daeyong Shim, Sangkwon Lee, Junhyun Chun, Kyowon Jin:
22.3 A 128Gb 8-High 512GB/s HBM2E DRAM with a Pseudo Quarter Bank Structure, Power Dispersion and an Instruction-Based At-Speed PMBIST. ISSCC 2020: 334-336
2010 – 2019
- 2019
- [c9]Dongkyun Kim, Minsu Park, Sungchun Jang, Jun-Yong Song, Hankyu Chi, Geunho Choi, Sunmyung Choi, Jaeil Kim, Changhyun Kim, Kyung Whan Kim, Kibong Koo, Seonghwi Song, Yongmi Kim, Dong-Uk Lee, Jaejin Lee, Dae Suk Kim, Ki Hun Kwon, Minsik Han, Byeongchan Choi, Hongjung Kim, Sanghyun Ku, Yeonuk Kim, Jong-Sam Kim, Sanghui Kim, Youngsuk Seo, Seungwook Oh, Dain Im, Haksong Kim, Jonghyuck Choi, Jinil Chung, Changhyun Lee, Yongsung Lee, Joo-Hwan Cho, Junhyun Chun, Jonghoon Oh:
A 1.1V 1ynm 6.4Gb/s/pin 16Gb DDR5 SDRAM with a Phase-Rotator-Based DLL, High-Speed SerDes and RX/TX Equalization Scheme. ISSCC 2019: 380-382 - 2018
- [c8]Jin-Hee Cho, Jihwan Kim, Wooyoung Lee, Dong-Uk Lee, Tae-Kyun Kim, Heat Bit Park, Chunseok Jeong, Myeong-Jae Park, Seung Geun Baek, Seokwoo Choi, Byung Kuk Yoon, Young Jae Choi, Kyo Yun Lee, Daeyong Shim, Jonghoon Oh, Jinkook Kim, Seok-Hee Lee:
A 1.2V 64Gb 341GB/S HBM2 stacked DRAM with spiral point-to-point TSV structure and improved bank group data control. ISSCC 2018: 208-210 - 2015
- [j3]Dong-Uk Lee, Kyung Whan Kim, Kwan-Weon Kim, Kang Seol Lee, Sang Jin Byeon, Jae-Hwan Kim, Jin-Hee Cho, Jaejin Lee, Jun Hyun Chun:
A 1.2 V 8 Gb 8-Channel 128 GB/s High-Bandwidth Memory (HBM) Stacked DRAM With Effective I/O Test Circuits. IEEE J. Solid State Circuits 50(1): 191-203 (2015) - [c7]Dong-Uk Lee, Kang Seol Lee, Yongwoo Lee, Kyung Whan Kim, Jong-Ho Kang, Jaejin Lee, Jun Hyun Chun:
Design considerations of HBM stacked DRAM and the memory architecture extension. CICC 2015: 1-8 - 2014
- [c6]Dong-Uk Lee, Kyung Whan Kim, Kwan-Weon Kim, Hongjung Kim, Ju Young Kim, Young Jun Park, Jae Hwan Kim, Dae Suk Kim, Heat Bit Park, Jin Wook Shin, Jang Hwan Cho, Ki Hun Kwon, Min Jeong Kim, Jaejin Lee, Kunwoo Park, Byong-Tae Chung, Sung-Joo Hong:
25.2 A 1.2V 8Gb 8-channel 128GB/s high-bandwidth memory (HBM) stacked DRAM with effective microbump I/O test methods using 29nm process and TSV. ISSCC 2014: 432-433 - [c5]Dong-Uk Lee, Kyung Whan Kim, Kwan-Weon Kim, Kang Seol Lee, Sang Jin Byeon, Jin-Hee Cho, Han Ho Jin, Sang Kyun Nam, Jaejin Lee, Jun Hyun Chun, Sung-Joo Hong:
An exact measurement and repair circuit of TSV connections for 128GB/s high-bandwidth memory(HBM) stacked DRAM. VLSIC 2014: 1-2
2000 – 2009
- 2009
- [j2]Dong-Uk Lee, Pansoo Kim, Wonjin Sung:
Robust Frame Synchronization for Low Signal-to-Noise Ratio Channels Using Energy-Corrected Differential Correlation. EURASIP J. Wirel. Commun. Netw. 2009 (2009) - [c4]Hyun-Woo Lee, Won-Joo Yun, Young-Kyoung Choi, Hyang-Hwa Choi, Jong-Jin Lee, Ki-Han Kim, Shin-Deok Kang, Ji-Yeon Yang, Jae-Suck Kang, Hyeng-Ouk Lee, Dong-Uk Lee, Sujeong Sim, Young-Ju Kim, Won-Jun Choi, Keun-Soo Song, Sang-Hoon Shin, Hyung-Wook Moon, Seung-Wook Kwack, Jung-Woo Lee, Nak-Kyu Park, Kwan-Weon Kim, Young-Jung Choi, Jin-Hong Ahn, Byong-Tae Chung:
A 1.6V 3.3Gb/s GDDR3 DRAM with dual-mode phase- and delay-locked loop using power-noise management with unregulated power supply in 54nm CMOS. ISSCC 2009: 140-141 - 2008
- [j1]Dong-Uk Lee, Seon Pil Kim, Tae Hee Lee, Eun Kyu Kim, Hyun-Mo Koo, Won-Ju Cho, Young-Ho Kim:
Electrical Characterization of Nano-Floating Gated Silicon-on-Insulator Memory with In2O3 Nano-Particles Embedded in Polyimide Insulator. IEICE Trans. Electron. 91-C(5): 747-750 (2008) - [c3]Dong-Uk Lee, Shin-Deok Kang, Nak-Kyu Park, Hyun-Woo Lee, Young-Kyoung Choi, Jung-Woo Lee, Seung-Wook Kwack, Hyeong-Ouk Lee, Won-Joo Yun, Sang-Hoon Shin, Kwan-Weon Kim, Young-Jung Choi, Ye Seok Yang:
Multi-Slew-Rate Output Driver and Optimized Impedance-Calibration Circuit for 66nm 3.0Gb/s/pin DRAM Interface. ISSCC 2008: 280-281 - [c2]Won-Joo Yun, Hyun-Woo Lee, Dongsuk Shin, Shin-Deok Kang, Ji-Yeon Yang, Hyeng-Ouk Lee, Dong-Uk Lee, Sujeong Sim, Young-Ju Kim, Won-Jun Choi, Keun-Soo Song, Sang-Hoon Shin, Hyang-Hwa Choi, Hyung-Wook Moon, Seung-Wook Kwack, Jung-Woo Lee, Young-Kyoung Choi, Nak-Kyu Park, Kwan-Weon Kim, Young-Jung Choi, Jin-Hong Ahn, Ye Seok Yang:
A 0.1-to-1.5GHz 4.2mW All-Digital DLL with Dual Duty-Cycle Correction Circuit and Update Gear Circuit for DRAM in 66nm CMOS Technology. ISSCC 2008: 282-283 - 2006
- [c1]Dong-Uk Lee, Hyun-Woo Lee, Ki Chang Kwean, Young-Kyoung Choi, Hyong Uk Moon, Seung-Wook Kwack, Shin-Deok Kang, Kwan-Weon Kim, Yong Ju Kim, Young-Jung Choi, Patrick B. Moran, Jin-Hong Ahn, Joong Sik Kih:
A 2.5Gb/s/pin 256Mb GDDR3 SDRAM with Series Pipelined CAS Latency Control and Dual-Loop Digital DLL. ISSCC 2006: 547-556
Coauthor Index
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