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ORCIDAlberto Castellazzi
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2020 – today
- 2024
[c9]Ciro Scognamillo, Antonio Pio Catalano, Lorenzo Codecasa, Alberto Castellazzi, Vincenzo d'Alessandro:
Enhancing Electrical Ruggedness in Double-Sided Cooled Power Modules. PRIME 2024: 1-4- 2022
- [c8]Ciro Scognamillo, Antonio Pio Catalano
, Vincenzo d'Alessandro, Lorenzo Codecasa, Alberto Castellazzi:
Defect Detection in Double-Sided Cooled Power Modules by Structure Functions. PRIME 2022: 17-20
2010 – 2019
- 2019
- [c7]Besar Asllani, Alberto Castellazzi, Oriol Avino-Salvado, Asad Fayyaz, Hervé Morel, Dominique Planson:
VTH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate. IRPS 2019: 1-6 - 2018
- [j39]Pushparajah Rajaguru, H. Lu, Chris Bailey, Alberto Castellazzi, V. Pathirana, N. Udugampola, Florin Udrea:
Impact of underfill and other physical dimensions on Silicon Lateral IGBT package reliability using computer model with discrete and continuous design variables. Microelectron. Reliab. 83: 146-156 (2018) - [j38]Besar Asllani, Asad Fayyaz, Alberto Castellazzi, Hervé Morel, Dominique Planson:
VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs. Microelectron. Reliab. 88-90: 604-609 (2018) - [j37]Fausto Stella, Olufisayo Olanrewaju, Zineng Yang, Alberto Castellazzi, Gianmario Pellegrino:
Experimentally validated methodology for real-time temperature cycle tracking in SiC power modules. Microelectron. Reliab. 88-90: 615-619 (2018) - [j36]Asad Fayyaz, Besar Asllani, Alberto Castellazzi, Michele Riccio, Andrea Irace:
Avalanche ruggedness of parallel SiC power MOSFETs. Microelectron. Reliab. 88-90: 666-670 (2018) - [j35]Mattia Antonini, Paolo Cova, Nicola Delmonte, Alberto Castellazzi:
GaN transistors efficient cooling by graphene foam. Microelectron. Reliab. 88-90: 812-816 (2018) - [c6]Alberto Castellazzi, Asad Fayyaz, Siwei Zhu, Thorsten Oeder, Martin Pfost:
Single pulse short-circuit robustness and repetitive stress aging of GaN GITs. IRPS 2018: 4 - 2017
- [j34]Paolo Cova, Attahir Murtala Aliyu, Alberto Castellazzi, Diego Chiozzi, Nicola Delmonte, P. Lasserre, N. Pignoloni:
Thermal design and characterization of a modular integrated liquid cooled 1200 V-35 A SiC MOSFET bi-directional switch. Microelectron. Reliab. 76-77: 277-281 (2017) - [j33]Thorsten Oeder, Alberto Castellazzi, Martin Pfost:
Electrical and thermal failure modes of 600 V p-gate GaN HEMTs. Microelectron. Reliab. 76-77: 321-326 (2017) - [j32]Attahir Murtala Aliyu, Alberto Castellazzi:
Measuring structure functions of power devices in inverters. Microelectron. Reliab. 79: 395-404 (2017) - [j31]Jose Angel Ortiz Gonzalez, Olayiwola Alatise, Attahir Murtala Aliyu, Pushparajah Rajaguru, Alberto Castellazzi, Li Ran, Philip Mawby, Chris Bailey:
Evaluation of SiC Schottky Diodes Using Pressure Contacts. IEEE Trans. Ind. Electron. 64(10): 8213-8223 (2017) - 2016
- [j30]Xiang Wang, Alberto Castellazzi, Pericle Zanchetta:
Observer based dynamic adaptive cooling system for power modules. Microelectron. Reliab. 58: 113-118 (2016) - [j29]Alberto Castellazzi, Asad Fayyaz, Gianpaolo Romano, Li Yang, Michele Riccio, Andrea Irace:
SiC power MOSFETs performance, robustness and technology maturity. Microelectron. Reliab. 58: 164-176 (2016) - [j28]Jose Angel Ortiz Gonzalez, Attahir Murtala Aliyu, Olayiwola Alatise, Alberto Castellazzi, Li Ran, Phil Mawby:
Development and characterisation of pressed packaging solutions for high-temperature high-reliability SiC power modules. Microelectron. Reliab. 64: 434-439 (2016) - [j27]Paolo Cova, Nicola Delmonte, Adane Kassa Solomon, Alberto Castellazzi:
Thermal design optimization of novel modular power converter assembly enabling higher performance, reliability and availability. Microelectron. Reliab. 64: 507-512 (2016) - [j26]Asad Fayyaz, Gianpaolo Romano, Alberto Castellazzi:
Body diode reliability investigation of SiC power MOSFETs. Microelectron. Reliab. 64: 530-534 (2016) - [c5]Emre Gurpinar, Alberto Castellazzi:
Novel multilevel hybrid inverter topology with power scalability. IECON 2016: 6516-6521 - 2015
- [j25]Asad Fayyaz, Alberto Castellazzi:
High temperature pulsed-gate robustness testing of SiC power MOSFETs. Microelectron. Reliab. 55(9-10): 1724-1728 (2015) - [c4]Antonio D. Martínez-Pérez, Adane Kassa Solomon, Alberto Castellazzi, Bing Lu:
GaN-based consumer application DC-DC converter for PCB embedment technology integration. IECON 2015: 2100-2105 - 2014
- [j24]Ihsan Supono, Jesús Urresti, Alberto Castellazzi, David Flores:
Overload robust IGBT design for SSCB application. Microelectron. Reliab. 54(9-10): 1906-1910 (2014) - [j23]Francesco Giuliani, De Dipankar, Nicola Delmonte, Alberto Castellazzi, Paolo Cova:
Robust snubberless soft-switching power converter using SiC power MOSFETs and bespoke thermal design. Microelectron. Reliab. 54(9-10): 1916-1920 (2014) - [j22]Asad Fayyaz, Li Yang, Michele Riccio, Alberto Castellazzi, Andrea Irace:
Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs. Microelectron. Reliab. 54(9-10): 2185-2190 (2014) - [c3]Xiang Wang, Alberto Castellazzi, Pericle Zanchetta:
Full-order observer based IGBT temperature online estimation. IECON 2014: 1494-1498 - 2013
- [j21]Michele Riccio, Alberto Castellazzi, Giuseppe De Falco, Andrea Irace:
Experimental analysis of electro-thermal instability in SiC Power MOSFETs. Microelectron. Reliab. 53(9-11): 1739-1744 (2013) - [j20]Li Yang, Alberto Castellazzi:
High temperature gate-bias and reverse-bias tests on SiC MOSFETs. Microelectron. Reliab. 53(9-11): 1771-1773 (2013) - [c2]Saeed Safari, Alberto Castellazzi, Pat Wheeler:
Performance evaluation of normaly-off SiC JFET in matrix converter without antiparrallel diodes. IECON 2013: 1815-1820 - 2012
- [j19]H. Q. S. Dang, Martin R. Corfield, Alberto Castellazzi, C. Mark Johnson, Patrick Wheeler:
Repetitive high peak current pulsed discharge film-capacitor reliability testing. Microelectron. Reliab. 52(9-10): 2301-2305 (2012) - [j18]Ashraf Ahmed, Yasaman Shadrokh, Lee Coulbeck, Alberto Castellazzi, C. Mark Johnson:
A closed-loop IGBT non-destructive tester. Microelectron. Reliab. 52(9-10): 2358-2362 (2012) - [j17]Alberto Castellazzi, Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara:
Thermal instability effects in SiC Power MOSFETs. Microelectron. Reliab. 52(9-10): 2414-2419 (2012) - [j16]Ashraf Ahmed, Alberto Castellazzi, L. Coulbeck, M. C. Johnson:
Circuit design and experimental test of a high power IGBT non-destructive tester. Microelectron. Reliab. 52(11): 2609-2616 (2012) - [c1]Ashraf Ahmed, Alberto Castellazzi, L. Coulbeck, M. C. Johnson:
Design and test of a high power IGBT non-destructive tester. ISIE 2012: 292-297 - 2011
- [j15]Alberto Castellazzi, T. Takuno, Ryutaro Onishi, Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara:
A study of SiC Power BJT performance and robustness. Microelectron. Reliab. 51(9-11): 1773-1777 (2011) - [j14]Alberto Castellazzi, Wei Juin Choy, Pericle Zanchetta:
Dynamic active cooling for improved power system reliability. Microelectron. Reliab. 51(9-11): 1964-1967 (2011) - 2010
- [j13]Fabio Carastro, Alberto Castellazzi, Jon C. Clare, Patrick Wheeler:
Control technique for power device electro-thermal stress minimisation in non-linear load variable-frequency resonant power converters. Microelectron. Reliab. 50(9-11): 1738-1743 (2010)
2000 – 2009
- 2009
- [j12]Fabio Carastro, Alberto Castellazzi, Jon C. Clare, M. C. Johnson, Michael J. Bland, Patrick W. Wheeler:
Reliability considerations in pulsed power resonant conversion. Microelectron. Reliab. 49(9-11): 1352-1357 (2009) - 2008
- [j11]Alberto Castellazzi, Mauro Ciappa:
Novel simulation approach for transient analysis and reliable thermal management of power devices. Microelectron. Reliab. 48(8-9): 1500-1504 (2008) - 2007
- [j10]Pierre Solomalala, J. Saiz, Michel Mermet-Guyennet, Alberto Castellazzi, Mauro Ciappa, X. Chauffleur, Jean-Pierre Fradin:
Virtual reliability assessment of integrated power switches based on multi-domain simulation approach. Microelectron. Reliab. 47(9-11): 1343-1348 (2007) - [j9]Alberto Castellazzi, Mauro Ciappa, Wolfgang Fichtner, M. Piton, Michel Mermet-Guyennet:
A study of the threshold-voltage suitability as an application-related reliability indicator for planar-gate non-punch-through IGBTs. Microelectron. Reliab. 47(9-11): 1713-1718 (2007) - [j8]Jesús Urresti-Ibañez, Alberto Castellazzi, M. Piton, José Rebollo, Michel Mermet-Guyennet, Mauro Ciappa:
Robustness test and failure analysis of IGBT modules during turn-off. Microelectron. Reliab. 47(9-11): 1725-1729 (2007) - [j7]X. Perpiñà, Alberto Castellazzi, M. Piton, Michel Mermet-Guyennet, José Millán:
Failure-relevant abnormal events in power inverters considering measured IGBT module temperature inhomogeneities. Microelectron. Reliab. 47(9-11): 1784-1789 (2007) - 2006
- [j6]Alberto Castellazzi, Martin Honsberg-Riedl, Gerhard K. M. Wachutka:
Thermal characterisation of power devices during transient operation. Microelectron. J. 37(2): 145-151 (2006) - [j5]Alberto Castellazzi, Mauro Ciappa, Wolfgang Fichtner, G. Lourdel, Michel Mermet-Guyennet:
Compact modelling and analysis of power-sharing unbalances in IGBT-modules used in traction applications. Microelectron. Reliab. 46(9-11): 1754-1759 (2006) - [j4]Davide Barlini, Mauro Ciappa, Alberto Castellazzi, Michel Mermet-Guyennet, Wolfgang Fichtner:
New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions. Microelectron. Reliab. 46(9-11): 1772-1777 (2006) - 2004
- [j3]Alberto Castellazzi, H. Schwarzbauer, Doris Schmitt-Landsiedel:
Analysis of PowerMOSFET chips failed in thermal instability. Microelectron. Reliab. 44(9-11): 1419-1424 (2004) - 2003
- [j2]Alberto Castellazzi, V. Kartal, R. Kraus, Norbert Seliger, Martin Honsberg-Riedl, Doris Schmitt-Landsiedel:
Hot-Spot Meaurements and Analysis of Electro-Thermal Effects in Low-Voltage Power-MOSFET's. Microelectron. Reliab. 43(9-11): 1877-1882 (2003) - 2002
- [j1]Alberto Castellazzi, R. Kraus, Norbert Seliger, Doris Schmitt-Landsiedel:
Reliability analysis of power MOSFET's with the help of compact models and circuit simulation. Microelectron. Reliab. 42(9-11): 1605-1610 (2002)
Coauthor Index
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last updated on 2024-10-07 21:22 CEST by the dblp team
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