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ORCIDViktor Sverdlov
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2020 – today
- 2024
[c30]Mario Bendra, Bernhard Pruckner, R. L. de Orio, Siegfried Selberherr
, Wolfgang Goes, Viktor Sverdlov:
Advancing Nonvolatile Memory Technologies: Enhancing Reliability and Performance through Double Spin Torque Magnetic Tunnel Junctions and Interlayer Exchange Coupling. DRC 2024: 1-2- [c29]Mario Bendra, R. L. de Orio, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov:
Influence of Interface Exchange Coupling in Multilayered Spintronic Structures. MIPRO 2024: 1579-1583 - [c28]Bernhard Pruckner, Nils Petter Jørstad, T. Hadámek, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov:
Field-Free Perpendicular Magnetization Switching of SOT-MRAM Devices by Magnetic Spin Hall Effect. MIPRO 2024: 1584-1589 - 2023
- [c27]Viktor Sverdlov, Siegfried Selberherr:
Charge and Spin Transport in Semiconductor Devices. ASICON 2023: 1-4 - [c26]Viktor Sverdlov, Mario Bendra, Bernhard Pruckner, Simone Fiorentini, Wolfgang Goes, Siegfried Selberherr:
Comprehensive Modeling of Advanced Composite Magnetoresistive Devices. ESSDERC 2023: 93-96 - [c25]Johannes Ender, Roberto Lacerda de Orio, Wolfgang Gös, Viktor Sverdlov:
Towards Efficient SOT-Assisted STT-MRAM Cell Switching Using Reinforcement Learning. LSSC 2023: 83-90 - [c24]Mario Bendra, Simone Fiorentini, Johannes Ender, R. L. de Orio, T. Hadámek, Nils Petter Jørstad, Bernhard Pruckner, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov:
Back-Hopping in Ultra-Scaled MRAM Cells. MIPRO 2023: 159-162 - 2022
- [c23]Simone Fiorentini, Mario Bendra, Johannes Ender, Roberto Lacerda de Orio, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov:
Spin Torques in ULTRA-Scaled MRAM Devices. ESSDERC 2022: 348-351 - [c22]Mario Bendra, Simone Fiorentini, Johannes Ender, R. L. de Orio, T. Hadámek, W. J. Loch, Nils Petter Jørstad, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov:
Spin Transfer Torques in Ultra-Scaled MRAM Cells. MIPRO 2022: 129-132 - 2021
- [c21]Mario Bendra, Johannes Ender, Simone Fiorentini, T. Hadámek, Roberto Lacerda de Orio, Wolfgang Goes, Viktor Sverdlov, Siegfried Selberherr:
Finite Element Method Approach to MRAM Modeling. MIPRO 2021: 70-73 - 2020
- [c20]Viktor Sverdlov, Al-Moatasem Bellah El-Sayed, Siegfried Selberherr:
Subband Structure and Ballistic Conductance of a Molybdenum Disulfide Nanoribbon in Topological 1T' Phase: A k·p Study. MIXDES 2020: 168-171
2010 – 2019
- 2019
- [c19]Roberto Lacerda de Orio, Alexander Makarov, Siegfried Selberherr, Wolfgang Goes, Johannes Ender, Simone Fiorentini, Viktor Sverdlov:
Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM. ESSDERC 2019: 146-149 - [c18]Viktor Sverdlov, Siegfried Selberherr:
A Monte Carlo Evaluation of the Current and Low Frequency Current Noise at Spin-Dependent Hopping. LSSC 2019: 446-453 - 2016
- [c17]Thomas Windbacher, Alexander Makarov, Viktor Sverdlov, Siegfried Selberherr:
The exploitation of magnetization orientation encoded spin-transfer torque for an ultra dense non-volatile magnetic shift register. ESSDERC 2016: 311-314 - 2015
- [c16]Viktor Sverdlov, Siegfried Selberherr:
Spin-Based CMOS-Compatible Devices. LSSC 2015: 42-49 - [c15]Joydeep Ghosh, Dmitry Osintsev, Viktor Sverdlov, Josef Weinbub, Siegfried Selberherr:
Evaluation of Spin Lifetime in Thin-Body FETs: A High Performance Computing Approach. LSSC 2015: 285-292 - [c14]Alexander Makarov, Thomas Windbacher, Viktor Sverdlov, Siegfried Selberherr:
SOT-MRAM based on 1Transistor-1MTJ-cell structure. NVMTS 2015: 1-4 - 2014
- [c13]Viktor Sverdlov, Hiwa Mahmoudi, Alexander Makarov, Siegfried Selberherr:
Magnetic tunnel junctions for future memory and logic-in-memory applications. MIXDES 2014: 30-33 - [c12]Hiwa Mahmoudi, Thomas Windbacher, Viktor Sverdlov, Siegfried Selberherr:
Compact modeling of memristive IMP gates for reliable stateful logic design. MIXDES 2014: 58-61 - 2013
- [c11]Dmitry Osintsev, Viktor Sverdlov, Siegfried Selberherr:
Reduction of momentum and spin relaxation rate in strained thin silicon films. ESSDERC 2013: 334-337 - [c10]Hiwa Mahmoudi, Thomas Windbacher, Viktor Sverdlov, Siegfried Selberherr:
MRAM-based logic array for large-scale non-volatile logic-in-memory applications. NANOARCH 2013: 26-27 - [c9]Thomas Windbacher, Hiwa Mahmoudi, Viktor Sverdlov, Siegfried Selberherr:
Novel MTJ-based shift register for non-volatile logic applications. NANOARCH 2013: 36-37 - 2012
- [j3]Alexander Makarov, Viktor Sverdlov, Siegfried Selberherr:
Emerging memory technologies: Trends, challenges, and modeling methods. Microelectron. Reliab. 52(4): 628-634 (2012) - [c8]Hiwa Mahmoudi, Viktor Sverdlov, Siegfried Selberherr:
MTJ-based implication logic gates and circuit architecture for large-scale spintronic stateful logic systems. ESSDERC 2012: 254-257 - 2011
- [c7]Dmitry Osintsev, Alexander Makarov, Viktor Sverdlov, Siegfried Selberherr:
Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins. LSSC 2011: 630-637 - 2010
- [c6]Alexander Makarov, Viktor Sverdlov, Siegfried Selberherr:
Modeling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations. NMA 2010: 87-94
2000 – 2009
- 2009
- [j2]Stanislav Tyaginov, Viktor Sverdlov, Ivan A. Starkov, Wolfgang Gös, Tibor Grasser:
Impact of O-Si-O bond angle fluctuations on the Si-O bond-breakage rate. Microelectron. Reliab. 49(9-11): 998-1002 (2009) - [c5]Thomas Windbacher, Viktor Sverdlov, Siegfried Selberherr, Clemens Heitzinger, Norbert J. Mauser, Christian A. Ringhofer:
Study of the Properties of Biotin-streptavidin Sensitive BioFETs. BIODEVICES 2009: 24-30 - [c4]Thomas Windbacher, Viktor Sverdlov, Siegfried Selberherr:
Biotin-Streptavidin Sensitive BioFETs and Their Properties. BIOSTEC (Selected Papers) 2009: 85-95 - [c3]M. Vasicek, Viktor Sverdlov, Johann Cervenka, Tibor Grasser, Hans Kosina, Siegfried Selberherr:
Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models. LSSC 2009: 443-450 - 2007
- [j1]Viktor Sverdlov, Hans Kosina, Siegfried Selberherr:
Modeling current transport in ultra-scaled field-effect transistors. Microelectron. Reliab. 47(1): 11-19 (2007) - [c2]Viktor Sverdlov, Enzo Ungersboeck, Hans Kosina:
Monte Carlo Algorithm for Mobility Calculations in Thin Body Field Effect Transistors: Role of Degeneracy and Intersubband Scattering. LSSC 2007: 157-164 - 2005
- [c1]Viktor Sverdlov, Hans Kosina, Christian A. Ringhofer, Mihail Nedjalkov, Siegfried Selberherr:
Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator. LSSC 2005: 594-601
Coauthor Index
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