"Determination of boron concentration in heavily doped p-type ..."

Changchun Chen et al. (2007)

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DOI: 10.1016/J.MEJO.2007.01.019

access: closed

type: Journal Article

metadata version: 2020-02-22

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Changchun Chen, Jiangfeng Liu, Benhai Yu, Qirun Dai:
Determination of boron concentration in heavily doped p-type Si_1-xGe_x/Si heterostructure by infrared ellipsometric spectroscopy. Microelectron. J. 38(3): 392-397 (2007)

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