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ORCIDMicroelectronics Journal, Volume 38
Volume 38, Number 1, January 2007
- Lei Zhang, Xia Guo, Ting Liang, Xiaoling Gu, Qiao Ming Lin, Guangdi Shen:
Color rendering and luminous efficacy of trichromatic and tetrachromatic LED-based white LEDs. 1-6 - Brahim Benbakhti, Michel Rousseau, J.-C. de Jaeger:
Physical study of the dissipated power area in high electron mobility transistors for thermal modelling. 7-13 - Jean-François Eloy:
A novel concept for optoelectronic nanotransistor design. 14-19 - Magdalena Kadlecíková
, Marian Vojs, Juraj Breza, Marián Veselý, Zdenek Frgala, Miroslav Michalka, Jirina Matejková, Anna Vojacková, Tibor Danis, Marian Marton:
Microwave and hot filament chemical vapour deposition of diamond multilayers on Si and WC-Co substrates. 20-23 - Clóves G. Rodrigues:
Hot-carrier relaxation in photoinjected ZnSe. 24-26 - Wei Wang, Jiawei Shi, Wenhai Jiang, Shuxu Guo, Hongmei Zhang, Baofu Quan, Dongge Ma:
High-mobility pentacene thin-film transistors with copolymer-gate dielectric. 27-30 - D. F. Takeuti, M. N. Tirolli, C. L. Danieli, Marco Antonio Robert Alves, Edmundo S. Braga, P. H. L. de Faria:
Fabrication of silicon field-emission arrays using masks of amorphous hydrogenated carbon films. 31-34 - Pedro M. Santos, Vítor Costa, M. C. Gomes, Beatriz Vieira Borges, Mário Lança:
High-voltage LDMOS transistors fully compatible with a deep-submicron 0.35mum CMOS process. 35-40 - Wu Songping:
Preparation of ultra fine nickel-copper bimetallic powder for BME-MLCC. 41-46 - Ling Li, Gregor Meller, Hans Kosina:
Temperature and field-dependence of hopping conduction in organic semiconductors. 47-51 - Kristy A. Campbell, Christopher M. Anderson:
Phase-change memory devices with stacked Ge-chalcogenide/Sn-chalcogenide layers. 52-59 - Kah-Yoong Chan, Bee-San Teo:
Investigation into the influence of direct current (DC) power in the magnetron sputtering process on the copper crystallite size. 60-62 - S. Youssef, R. Al Asmar, J. Podlecki, Frédérique Pascal-Delannoy, Y. Zaatar, A. Foucaran:
Characterization of LiTaO3 thin films fabricated by sol-gel technique. 63-66 - J. W. Wan, Wen-Jun Zhang, D. J. Bergstrom:
Recent advances in modeling the underfill process in flip-chip packaging. 67-75 - D. K. Maurya:
Effects of post-thermal treatment on the properties of rf reactive sputtered ITO films. 76-79 - Youqing Yu, Fei Gao, Guiguang Xiong:
Spin-orbit splitting dependent resonant third-order nonlinear optical susceptibility in InGaN/GaN multiple quantum wells. 80-86 - Xiaoming Wu, Jianyuan Yu, Tianling Ren, Litian Liu:
Micro-Raman spectroscopy measurement of stress in silicon. 87-90 - M. M. El-Nahass, K. F. Abd-El-Rahman, A. A. A. Darwish:
Fabrication and electrical characterization of p-NiPc/n-Si heterojunction. 91-95 - Ali Missaoui, Lotfi Beji, Mounir Gaidi, Zina Harrabi, Hafedh Ben Ouada, Abdelaziz Bouazizi:
Structural characterisation of CdS layers deposited on porous p-type GaAs. 96-101 - Yong-Soo Cho, Hidekuni Takao, Kazuaki Sawada, Makoto Ishida, Sie-Young Choi:
High speed SOI CMOS image sensor with pinned photodiode on handle wafer. 102-107 - Zhong Zhi You, Jiang Ya Dong:
Electrical and optical characteristics of polymer light-emitting devices with surface-treated indium-tin-oxide electrodes. 108-113 - Paula Ghedini Der Agopian, João Antonio Martino, Eddy Simoen, Cor Claeys:
Study of the linear kink effect in PD SOI nMOSFETs. 114-119 - Xiang-meng Jing, Di Chen, Dong-Ming Fang, Chuang Huang, Jing-Quan Liu, Xiang Chen:
Multi-layer microstructure fabrication by combining bulk silicon micromachining and UV-LIGA technology. 120-124 - Hyun-Kyu Ryu, Yil-Wook Kim, Kangtaek Lee, Chee Burm Shin, Chang-Koo Kim:
A comparative study on a high aspect ratio contact hole etching in UFC- and PFC-containing plasmas. 125-129 - Massimo Alioto, Giuseppe Di Cataldo, Gaetano Palumbo:
Mixed Full Adder topologies for high-performance low-power arithmetic circuits. 130-139 - Daniela De Venuto, Leonardo Reyneri:
Fully digital strategy for fast calibration and test of SigmaDelta ADC's. 140-147
Volume 38, Number 2, February 2007
- Márta Rencz:
Thermal investigations of integrated circuits in systems at THERMINIC'05. 149-150 - Diego Mateo, Josep Altet, Eduardo Aldrete-Vidrio:
Electrical characterization of analogue and RF integrated circuits by thermal measurements. 151-156 - Jianzheng Hu, Lianqiao Yang, Moo Whan Shin:
Mechanism and thermal effect of delamination in light-emitting diode packages. 157-163 - Mohamed Ali Belaïd, K. Ketata, Karine Mourgues, M. Gares, Mohamed Masmoudi, Jérôme Marcon:
Reliability study of power RF LDMOS device under thermal stress. 164-170 - Mitsuteru Kimura, Fumitoshi Sakurai, Hirao Ohta, Tomoyuki Terada:
Proposal of a new structural thermal vacuum sensor with diode-thermistors combined with a micro-air-bridge heater. 171-176 - Marcin Janicki, Gilbert De Mey, Andrzej Napieralski:
Thermal analysis of layered electronic circuits with Green's functions. 177-184 - Paolo Emilio Bagnoli, Carlo Bartoli, Fabio Stefani:
Validation of the DJOSER analytical thermal simulator for electronic power devices and assembling structures. 185-196
- Chua-Chin Wang, Tzung-Je Lee, Chih-Chen Li, Ron Hu:
Voltage-to-frequency converter with high sensitivity using all-MOS voltage window comparator. 197-202 - MengYao Wang, Wei Pan, Bin Luo, Weili Zhang, XiHua Zou:
Optimization of gray-scale performance in pixellated-metal-mirror FLC-OASLM by equivalent circuit model. 203-209 - Jian Liu, Xinxin Li:
A piezoresistive microcantilever magnetic-field sensor with on-chip self-calibration function integrated. 210-215 - Mojtaba Karimi, Manouchehr Kalafi, Asghar Asgari:
Numerical optimization of an extracted HgCdTe IR-photodiodes for 10.6-mum spectral region operating at room temperature. 216-221 - Hee-Wook You, Jung-Hyuk Koh:
Ag(Ta, Nb)O3 thin-film interdigital capacitors for microwave applications. 222-226 - Kuan Yew Cheong, F. A. Jasni:
Effects of precursor aging and post-deposition treatment time on photo-assisted sol-gel derived low-dielectric constant SiO2 thin film on Si. 227-230 - X. Y. Sun, W. L. Li, Z. R. Hong:
The electroluminescent investigation of double layer Eu-complex organic electronic luminescence diodes. 231-234 - S. A. Sofianos, Gaotsiwe Rampho, H. Azemtsa Donfack, Isaac E. Lagaris, H. Leeb:
Design of quantum filters with pre-determined reflection and transmission properties. 235-244 - Daya Ram Sahu, Shin-Yuan Lin, Jow-Lay Huang:
Improved properties of Al-doped ZnO film by electron beam evaporation technique. 245-250 - Jia-Chuan Lin, Po-Yu Yang, Wei-Chih Tsai:
Simulation and analysis of metamorphic high electron mobility transistors. 251-254 - Jing Zhou, Xiaomin Ren, Qi Wang, D. P. Xiong, Hui Huang, Yongqing Huang:
Surface characterization of epitaxial lateral overgrowth of InP on InP/GaAs substrate by MOCVD. 255-258 - Fangcong Wang, Su Liu, Chunlin Zhang:
The dielectric constant of materials effect the property of the OLED. 259-261 - Macho Anani, Hamza Abid, Zouaoui Chama, Christian Mathieu, Adlane Sayede, B. Khelifa:
InxGa1-xN refractive index calculations. 262-266 - Hongliang Jiang, Duanzheng Yao, Shaohua Gong, Xiaobo Feng:
Parametric properties of the electron spin relaxation in InAs quantum dots. 267-271 - Weijun Luo, Ke Wei, Xiaojuan Chen, Chengzhan Li, Xinyu Liu, Xiaoliang Wang:
Structure optimization of field-plate AlGaN/GaN HEMTs. 272-274 - Yong Wang, Shu-ling Zhao, Fujun Zhang, Guang-cai Yuan, Zheng Xu:
Study of electroplex emission from a blend of two basic blue-emitting materials PVK and NPB. 275-277 - Xing-Ming Liu, Lin Han, Li-Tian Liu:
New application of polyimide in uncooled a-Si TFT infrared sensors. 278-281 - Su Chen, Zhitang Song, Yang Wang, Duanzheng Yao:
Preparation of one-dimensional photonic crystal with variable period by using ultra-high vacuum electron beam evaporation. 282-284 - Tirthajyoti Sarkar, Sudip K. Mazumder:
Dynamic power density, wavelength, and switching time modulation of optically triggered power transistor (OTPT) performance parameters. 285-298
Volume 38, Number 3, March 2007
- Daya Ram Sahu, Jow-Lay Huang:
Properties of ZnO/Cu/ZnO multilayer films deposited by simultaneous RF and DC magnetron sputtering at different substrate temperatures. 299-303 - Hung-Wei Wu, Yan-Kuin Su, Ru-Yuan Yang, Min-Hang Weng, Yu-Der Lin:
Fabrication of low-loss thin film microstrip line on low-resistivity silicon for RF applications. 304-309 - Jia-Chuan Lin, Yu-Chieh Chen, Wei-Chih Tsai:
The study of delta-doped InGaP/InGaAs/GaAs pseudomorphic high electron mobility transistor. 310-315 - Chun Zhao, Shuangxi Xing, Youhai Yu, Wanjin Zhang, Ce Wang:
A novel all-plastic diode based upon pure polyaniline material. 316-320 - Joaquín Alvarado, Antonio Cerdeira, Valeria Kilchytska, Denis Flandre:
Harmonic distortion analysis using an improved charge sheet model for PD SOI MOSFETs. 321-326 - Càndid Reig, C. J. Gómez-García, V. Muñoz-Sanjosé:
Crystal growth of Hg1-xMnxSe for infrared detection. 327-331 - Andre E. Botha:
Multiband k·p Riccati equation for electronic structure and transport in type-II heterostructures. 332-341 - Ali Rostami, Hassan Rasooli Saghai:
A novel proposal for ultra-high optical nonlinearity in GaN/AlGaN spherical centered defect quantum dot (SCDQD). 342-351 - Harsupreet Kaur, Sneha Kabra, Subhasis Haldar, R. S. Gupta:
An analytical drain current model for graded channel cylindrical/surrounding gate MOSFET. 352-359 - Suyan Xiao, Lufeng Che, Xinxin Li, Yuelin Wang:
A cost-effective flexible MEMS technique for temperature sensing. 360-364 - Xiaomeng Shi, Kiat Seng Yeo, Jianguo Ma, Manh Anh Do:
Distortion of pulsed signals in carbon nanotube interconnects. 365-370 - Sang-Hyun Kim, James G. Boyd, Sathyanarayanan Mani:
Mechanical behavior of mismatch strain-driven microcantilever. 371-380 - George T. Zardalidis, Ioannis Karafyllidis:
Design and simulation of a nanoelectronic single electron 2-4 decoder using a novel simulator. 381-387 - G. M. Alonzo-Medina, A. I. Oliva:
An in situ technique to measure gold resistance oscillations during the first stages of growth. 388-391 - Changchun Chen, Jiangfeng Liu, Benhai Yu, Qirun Dai:
Determination of boron concentration in heavily doped p-type Si1-xGex/Si heterostructure by infrared ellipsometric spectroscopy. 392-397 - Tiemin Zhang, Guoqing Miao, Yixin Jin, Jianchun Xie, Hong Jiang, Zhiming Li, Hang Song:
Effect of In content of the buffer layer on crystalline quality and electrical property of In0.82Ga0.18As/InP grown by LP-MOCVD. 398-400 - Mao-Wang Lu, Gui-Lian Zhang, Yong-Hong Kong:
Bias-tunable electron-spin polarization in an antiparallel double delta-magnetic-barrier nanostructure. 401-405 - Gemma Gabriel, Ivan Erill, Jaume Caro, Rodrigo Gómez, Dolors Riera, Rosa Villa, Philippe Godignon:
Manufacturing and full characterization of silicon carbide-based multi-sensor micro-probes for biomedical applications. 406-415 - Yong-Soo Cho, Sung-Wook Jang, Young-Soo Sohn, Sie-Young Choi:
Design and fabrication of a vibration sensor using a conductive ball. 416-421 - D. W. Zhao, S. F. Song, S. L. Zhao, F. J. Zhang, Z. Xu:
Comparison of photoexcited energy transfer in the organic double-layer and multilayer quantum well structures. 422-425 - Amal Zaki, Hamed Elsimary, Mona E. Zaghloul:
Miniature SAW device using MEMS technology. 426-429 - Viswanath Annampedu, Meghanad D. Wagh:
Reconfigurable approximate pattern matching architectures for nanotechnology. 430-438 - Thomas Johnson, Robert Sobot, Shawn P. Stapleton:
CMOS RF class-D power amplifier with bandpass sigma-delta modulation. 439-446 - Zhouqi Gui, Guiguang Xiong, Fei Gao:
Parameter-dependent third-order nonlinear susceptibility of parabolic InGaN/GaN quantum dots. 447-451
Volume 38, Numbers 4-5, April-May 2007
- Daniela De Venuto, Tom Chen:
Editorial. 453 - Kambiz Rahimi, Chris Diorio:
Self-tuning adaptive delay sequential elements. 454-462 - Syed M. Alam, Chee Lip Gan, Carl V. Thompson, Donald E. Troxel:
Reliability computer-aided design tool for full-chip electromigration analysis and comparison with different interconnect metallizations. 463-473 - Daniela De Venuto, Leonardo Reyneri:
Fully digital strategy for fast calibration and test of SigmaDelta ADCs. 474-481
- Victor Navarro-Botello, Juan A. Montiel-Nelson, Saeid Nooshabadi:
High performance low power CMOS dynamic logic for arithmetic circuits. 482-488 - Ginés Doménech-Asensi, Juan Hinojosa, Juan Martínez-Alajarín:
A behavioral model development methodology for microwave components and integration in VHDL-AMS. 489-495 - Neila Hizem, A. Kalboussi, R. Adhiri, A. Souifi:
Blue/green luminescence based on Zn(S)Se/GaAs heterostructures. 496-500 - Jin Zhao Huang, Zheng Xu, Fujun Zhang, Su Ling Zhao, Yuan Li, Lin Song, Xu Rong Xu:
Dissociation of excitons in organic light-emitting diodes. 501-504 - Macho Anani, Christian Mathieu, Hamza Abid, Sara Lebid, Youcef Amar:
Calculation of the effective indices of a GaN/InxGa1-xN optical guiding structure. 505-508 - Wei Hu, Yi Zhao, Chunsheng Ma, Jingying Hou, Shiyong Liu:
Improving the performance of organic thin-film transistor with a doped interlayer. 509-512 - Julio C. Rimada, Luis Manuel Hernández, James P. Connolly, K. W. J. Barnham:
Conversion efficiency enhancement of AlGaAs quantum well solar cells. 513-518 - Ching-Liang Dai, Heng-Ming Hsu, Ming-Chang Tsai, Ming-Ming Hsieh, Ming-Wei Chang:
Modeling and fabrication of a microelectromechanical microwave switch. 519-524 - Jing Huang, Mariam Momenzadeh, Fabrizio Lombardi:
Design of sequential circuits by quantum-dot cellular automata. 525-537 - Y. Zaatar, R. Al Asmar, J. Podlecki, S. Youssef, M. Abdallah, N. Ouaini, A. Foucaran:
Fabrication and characterization of stacked ZnO and ZnOGa2O3 layers for the realization of bulk acoustic wave resonated membranes. 538-546 - Sneha Kabra, Harsupreet Kaur, Subhasis Haldar, Mridula Gupta, R. S. Gupta:
Two-dimensional subthreshold analysis of sub-micron GaN MESFET. 547-555 - Shi Fu, Guifu Ding, Hong Wang, Zhuoqing Yang, Jianzhi Feng:
Design and fabrication of a magnetic bi-stable electromagnetic MEMS relay. 556-563 - Zhong Zhi You:
Influence of electrode characteristics on the performance of organic light-emitting devices. 564-569 - Haitao Yin, Tianquan Lü, Hua Li, Zelong He:
Electronic transport through a T-shaped four-quantum dot system. 570-575 - R. Kinder, F. Schwierz, P. Beno, J. Geßner:
Simulation of boron diffusion in Si and strained SiGe layers. 576-582 - Ranjith Kumar, Volkan Kursun:
Voltage optimization for simultaneous energy efficiency and temperature variation resilience in CMOS circuits. 583-594 - Xianwu Xing, Ching-Chuen Jong:
A look-ahead synthesis technique with backtracking for switching activity reduction in low power high-level synthesis. 595-605 - Deping Xiong, Xiaomin Ren, Qi Wang, Aiguang Ren, Jing Zhou, Jihe Lv, Shiwei Cai, Hui Huang, Yongqing Huang:
Epitaxial lateral overgrowth of InP/GaAs (100) heterostructures by metalorganic chemical vapor deposition. 606-609 - Nabil Sghaier, Liviu Militaru, M'Hamed Trabelsi, Yacoubi Yacoubi, Souifi Souifi:
Analysis of slow traps centres in submicron MOSFETs by random telegraph signal technique. 610-614 - M. H. Boukhatem, M. El Tahchi, G. W. El Haj Moussa, M. Ajaka, A. Khoury, P. Mialhe:
Carriers temperature for an operating silicon p-n junction. 615-619 - Naoki Kakuda, Shiro Tsukamoto, Akira Ishii, Katsutoshi Fujiwara, Toshikazu Ebisuzaki, Koichi Yamaguchi, Yasuhiko Arakawa:
Surface reconstructions on Sb-irradiated GaAs(001) formed by molecular beam epitaxy. 620-624 - G. S. Kliros, P. C. Divari:
Magnetocapacitance of a MODFET under two-dimensional periodic potential modulation. 625-631 - Wei Hu, Yi Zhao, Jingying Hou, Chunsheng Ma, Shiyong Liu:
Improving the performance of the organic thin-film transistors with thin insulating lithium fluoride buffer layer. 632-636 - Antonela Dima, Francesco Giuseppe Della Corte, Maurizio Casalino, Ivo Rendina:
Li batteries with porous sol-gel cathodes. 637-641 - A. Albina, P. L. Taberna, J. P. Cambronne, P. Simon, E. Flahaut, Thierry Lebey:
Influence of carbonaceous electrodes on capacitance and breakdown voltage for hybrid capacitor. 642-648 - Rajeevan Chandel, Sankar Sarkar, Rajendra Prasad Agarwal:
An analysis of interconnect delay minimization by low-voltage repeater insertion. 649-655
Volume 38, Numbers 6-7, June-July 2007
- Shang-Chou Chang, Tien-Chai Lin, Chen-Yu Pai:
Low-temperature process in growing carbon nanotube. 657-662 - Congxin Xia, Fengchun Jiang, Shuyi Wei, Xu Zhao:
Hydrogenic impurity in zinc-blende GaN/AlGaN quantum dot. 663-666 - Ryohei Izaki, Masayuki Hoshino, Tadashi Yaginuma, Nakaba Kaiwa, Shigeo Yamaguchi, Atsushi Yamamoto:
Thermal properties and thermoelectric microdevices with InN thin films. 667-671 - Ching-Liang Dai, Cheng-Hsiung Kuo, Ming-Chao Chiang:
Microelectromechanical resonator manufactured using CMOS-MEMS technique. 672-677 - Antonella Arena, Nicola Donato, Gaetano Saitta:
Electrical characterization of solid-state heterojunctions between PEDOT: PSS and an anionic polyelectrolyte. 678-681 - Georgy L. Pakhomov, Evgeny S. Leonov, Alexander Yu. Klimov:
Rectification and NIR photoresponse in p-Si/phthalocyanine/metal heterostructures. 682-685 - Zhijun Wu, Hengqun Guo, Jiaxian Wang:
Highly efficient green top-emitting organic light-emitting devices with metal electrode structure. 686-689 - Gwiy-Sang Chung, Ki-Bong Han:
Characteristics of a micromachined piezovalve combined with a multilayer ceramic actuator. 690-694 - You Yin, Hayato Sone, Sumio Hosaka:
A chalcogenide-based device with potential for multi-state storage. 695-699 - Ke Liu, T. A. Schmedake, K. Daneshvar, Raphael Tsu:
Interaction of CdSe/ZnS quantum dots: Among themselves and with matrices. 700-705 - Assim Sagahyroon, Fadi A. Aloul:
Using SAT-based techniques in power estimation. 706-715 - Chua-Chin Wang, Gang-Neng Sung, Jian-Ming Huang, Li-Ping Lin:
An 80MHz PLL with 72.7ps peak-to-peak jitter. 716-721 - R. Rao, J. E. Bradby, S. Ruffell, J. S. Williams:
Nanoindentation-induced phase transformation in crystalline silicon and relaxed amorphous silicon. 722-726 - M. Alwan, B. Beydoun, K. Ketata, M. Zoaeter:
Bias temperature instability from gate charge characteristics investigations in N-Channel Power MOSFET. 727-734 - Xing-Ming Liu, Hua-Jun Fang, Li-Tian Liu:
Study on new structure uncooled a-Si microbolometer for infrared detection. 735-739 - Han Sung Joo, Sang-Wan Ryu, Jeha Kim, Ilgu Yun:
Degradation analysis in asymmetric sampled grating distributed feedback laser diodes. 740-745 - Jaroslava Skriniarová, Dusan Pudis, Ivan Martincek, Jaroslav Kovác, Norbert Tarjányi, Marián Veselý, I. Turek:
Periodic structures prepared by two-beam interference method. 746-749 - Jung-Hui Tsai, I-Hsuan Hsu, Tzu-Yen Weng, Chien-Ming Li:
Simulated analysis for InGaP/GaAs heterostructure-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure. 750-753 - N. G. Semaltianos:
Spin-coated PMMA films. 754-761 - Paul M. Holland, Petar Igic:
A p+/p-buffer/n-epi cmos compatible high-side RESURF LDMOS transistor for Power IC applications. 762-766 - Li Shuti, Fan Guanghan, Zhou Tianming, Zheng Shuwen, Sun Huiqing:
Effect of Si doping on the photoluminescence properties of AlGaInP/GaInP multiple quantum wells. 767-770 - Michal Szymanski:
Two-dimensional model of heat flow in broad-area laser diode: Discussion of the upper boundary condition. 771-776 - H. Y. Wong, N. F. Mohd Shukor, Nowshad Amin:
Prospective development in diffusion barrier layers for copper metallization in LSI. 777-782 - S. Y. Tan:
Challenges and performance limitations of high-k and oxynitride gate dielectrics for 90/65nm CMOS technology. 783-786 - Shufei Xie, Guiguang Xiong, Xiaobo Feng, Zhihong Chen:
Characteristics of quadratic electro-optic effects and electro-absorption process in CdSe parabolic quantum dots. 787-790 - Hsien-Tsung Chang, Chia-Yen Lee, Chih-Yung Wen, Boe-Shong Hong:
Theoretical analysis and optimization of electromagnetic actuation in a valveless microimpedance pump. 791-799 - Changchun Chen, Jiangfeng Liu, Benhai Yu, Qirun Dai:
Investigation of Si/SiGe/Si heterostructure implanted by H ion and annealed in vacuum and dry O2 ambient. 800-804 - Faouzi Bouchhima, Gabriela Nicolescu, El Mostapha Aboulhamid, Mohamed Abid:
Generic discrete-continuous simulation model for accurate validation in heterogeneous systems design. 805-815
Volume 38, Numbers 8-9, August-September 2007
- S. Al-Harthi, A. Sellai:
Features of a tunnel diode oscillator at different temperatures. 817-822 - Madnarski Sutikno, Uda Hashim, Zul Azhar Zahid Jamal:
A systematic dry etching process for profile control of quantum dots and nanoconstrictions. 823-827 - Ching-Liang Dai, Ming-Chao Chiang, Ming-Wei Chang:
Simulation and fabrication of HF microelectromechanical bandpass filter. 828-833 - Fatima E. Ahmed, O. A. Yassin:
Fabrication and effect of the dielectric permittivity on the ideality factor of MEH-PPV Schottky diodes doped with electron acceptor fluorescent dyes. 834-837 - Xiaoyan Wang, Xiaoliang Wang, Guoxin Hu, Baozhu Wang, Zhiyong Ma, Hongling Xiao, Cuimei Wang, Junxue Ran, Jianping Li:
Characteristics of high Al content AlxGa1-xN grown by metalorganic chemical vapor deposition. 838-841 - Jae-sik Lee, Michael Mayer, Norman Y. Zhou, S. J. Hong:
Iterative optimization of tail breaking force of 1mil wire thermosonic ball bonding processes and the influence of plasma cleaning. 842-847 - Parvesh Gangwani, Sujata Pandey, Subhasis Haldar, Mridula Gupta, R. S. Gupta:
A compact C-V model for 120nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications. 848-854 - Dong-Ming Fang, Shi Fu, Ying Cao, Yong Zhou, Xiao-Lin Zhao:
Surface micromachined RF MEMS variable capacitor. 855-859 - A. Ben Fredj, M. Debbichi, M. Said:
Influence of the composition fluctuation and the disorder on the bowing band gap in semiconductor materials. 860-870 - Buket D. Barkana, Hasan H. Erkaya:
A model for the resonant tunneling semiconductor-controlled rectifier. 871-876 - Rajesh K. Tyagi, Anil Ahlawat, Manoj Pandey, Sujata Pandey:
An analytical two-dimensional model for AlGaN/GaN HEMT with polarization effects for high power applications. 877-883 - Doumit Zaouk, R. Al Asmar, J. Podlecki, Y. Zaatar, A. Khoury, A. Foucaran:
X-ray diffraction studies of electrostatic sprayed SnO2: F films. 884-887 - Gwiy-Sang Chung:
Characteristics of SiCN microstructures for harsh environment and high-power MEMS applications. 888-893 - Aimen Boubaker, Nabil Sghaier, M. Troudi, A. Kalboussi, Nicolas Baboux, A. Souifi:
A new SIMPLORER model for single-electron transistors. 894-899 - Ali Rostami, Hamed Baghban, Hassan Rasooli Saghai:
An ultra-high level second-order nonlinear optical susceptibility in strained asymmetric GaN-AlGaN-AlN quantum wells: Towards all-optical devices and systems. 900-904 - K. T. Lam, Liang-Wen Ji:
Fractal analysis of InGaN self-assemble quantum dots grown by MOCVD. 905-909 - Ying Wang, Fei Cao, Minghui Ding, Dawei Yang:
Investigation of Zr-N thin films for use as diffusion barrier in Cu metallization. 910-914 - M. Guerino, Marcos Massi, Ronaldo Domingues Mansano:
The influence of nitrogen and fluorine on the dielectric constant of hydrogenated amorphous carbon (a-C: H) films. 915-918 - X. Liu, Y. Bai, L. Chen, F. X. Wei, X. B. Zhang, X. Y. Jiang, Zh. L. Zhang:
Organic thin film transistors with double insulator layers. 919-922 - Yeong-Tsair Lin, Mei-Chu Jen, Wen-Yaw Chung, Dong-Shiuh Wu, Ho-Cheng Lin, Jiann-Jong Chen:
A monolithic buck DC-DC converter with on-chip PWM circuit. 923-930 - Saibal Mukhopadhyay, Keunwoo Kim, Jae-Joon Kim, Shih-Hsien Lo, Rajiv V. Joshi, Ching-Te Chuang, Kaushik Roy:
Estimation of gate-to-channel tunneling current in ultra-thin oxide sub-50nm double gate devices. 931-941 - Mehdi Saeedi, Morteza Saheb Zamani, Ali Jahanian:
Evaluation, prediction and reduction of routing congestion. 942-958
Volume 38, Numbers 10-11, October-November 2007
- Raphael Tsu:
Applying the insight into superlattices and quantum wells for nanostructures: Low-dimensional structures and devices. 959-1012
- Sona P. Kumar, Anju Agrawal, Rishu Chaujar, Sneha Kabra, Mridula Gupta, R. S. Gupta:
Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson's equation. 1013-1020 - Chenyang Xue, Shang Chen, Wendong Zhang, Binzhen Zhang, Guojun Zhang, Hui Qiao:
Design, fabrication, and preliminary characterization of a novel MEMS bionic vector hydrophone. 1021-1026 - Yong-Seo Koo:
Analysis of the electrical characteristics of power LDMOSFETs having different design parameters under various temperature. 1027-1033 - Minsoo Youm, Yong Tae Kim, Man Young Sung:
Effects of bottom electrode and environmental insulator on thermal distribution of edge contact-type PRAM cell. 1034-1037 - Xiaoliang Han, Chihao Xu:
Design and characterization of high-voltage NMOS and PMOS devices in standard 0.25mum CMOS technology. 1038-1041 - Chan-Kyung Kim, Jae-Goo Lee, Young-Hyun Jun, Chil-Gee Lee, Bai-Sun Kong:
CMOS temperature sensor with ring oscillator for mobile DRAM self-refresh control. 1042-1049 - Ashudeb Dutta, Kaushik Dasgupta, T. K. Bhattacharyya:
Compact small signal modeling and PSO-based input matching of a packaged CMOS LNA in subthreshold region. 1050-1056 - Andrea Mazzanti, Luca Larcher, Francesco Svelto:
CMOS balanced regenerative frequency dividers for wide-band quadrature LO generation. 1057-1063 - Ferdinando Bedeschi, Chiara Boffino, Edoardo Bonizzoni, Claudio Resta, Guido Torelli:
Staircase-down SET programming approach for phase-change memories. 1064-1069 - Baoyong Chi, Jinke Yao, Shuguang Han, Xiang Xie, Guolin Li, Zhihua Wang:
Low power high data rate wireless endoscopy transceiver. 1070-1081 - Eduardo Romero, Gabriela Peretti, Carlos A. Marqués:
An operational amplifier model for evaluating test strategies at behavioural level. 1082-1094 - Venkat Satagopan, Bonita Bhaskaran, Anshul Singh, Scott C. Smith:
Automated energy calculation and estimation for delay-insensitive digital circuits. 1095-1107
Volume 38, Number 12, December 2007
- Francisco Torrens, Gloria Castellano:
Effect of packing on the cluster nature of C nanotubes: An information entropy analysis. 1109-1122 - Arthur Nieuwoudt, Tamer Ragheb, Yehia Massoud:
Narrow-band low-noise amplifier synthesis for high-performance system-on-chip design. 1123-1134 - Jordi Sacristán-Riquelme, M. Teresa Osés:
Implantable stimulator and recording device for artificial prosthesis control. 1135-1149 - Siroos Toofan, Abdolreza Rahmati, Adib Abrishamifar, G. Roientan Lahiji:
A low-power and high-gain fully integrated CMOS LNA. 1150-1155 - M. Troudi, Nabil Sghaier, Aimen Boubaker, A. Souifi, A. Kalboussi:
Macro-modeling for the compact simulation of single electron transistor using SIMPLORER. 1156-1160 - G. S. Kliros, P. C. Divari:
Beating of the oscillations in the magnetocapacitance of a MODFET with Rasba spin-orbit interaction. 1161-1168 - Antonela Dima, Francesco Giuseppe Della Corte, Ivo Rendina, Mihai O. Dima:
Bistable hybrids in sol-gel technology for switching devices. 1169-1174 - Peihong Wang, Xu-Han Dai, Dong-Ming Fang, Xiao-Lin Zhao:
Design, fabrication and performance of a new vibration-based electromagnetic micro power generator. 1175-1180 - Shaibal Mukherjee, S. Jain, F. Zhao, J. P. Kar, Z. Shi:
Photoluminescence studies from micropillars fabricated on IV-VI multiple quantum-well semiconductor structure. 1181-1184 - Yu Bai, X. Liu, L. Chen, Khizar-ul-Haq, M. A. Khan, Wen-Qing Zhu, X. Y. Jiang, Zhilin Zhang:
Organic thin-film field-effect transistors with MoO3/Al electrode and OTS/SiO2 bilayer gate insulator. 1185-1190 - Zhankun Weng, Aimin Liu, Yanhong Liu, Huijing Luo, Feng Xu, Xiuping Liang, Guotong Du:
Formation of porous InP by cathodic decomposition. 1191-1195 - L. Magafas, John A. Kalomiros:
Optimization of Al/a-SiC: H optical sensor device by means of thermal annealing. 1196-1201 - Shang-Chou Chang, Ming-Hua Shiao:
Smooth indium zinc oxide film prepared by sputtering a In2O3: ZnO=95: 5 target. 1202-1206 - Jing Zhou, Xiaomin Ren, Qi Wang, Yongqing Huang, Jihe Lv, Hui Huang, Shiwei Cai:
Temperature-controlled self-organized InP nanostructures grown on GaAs(100) substrate by MOCVD. 1207-1210 - Oleg Lupan, Guangyu Chai, Lee Chow:
Fabrication of ZnO nanorod-based hydrogen gas nanosensor. 1211-1216 - Samson Mil'shtein, J. Palma, C. Liessner, C. Gil:
Light emission from semiconductor triode. 1217-1219 - Shang-Chou Chang:
Low-pressure H2/N2 annealing on indium tin oxide film. 1220-1225 - Lallan Yadav, Naveen Chandra Gupta, R. Dwivedi, Ravi S. Singh:
Sensing behavior and mechanism of titanium dioxide-based MOS hydrogen sensor. 1226-1232 - Amador Pérez-Tomás, Michael R. Jennings, M. Davis, Vishal Shah, T. Grasby, James Anthony Covington, Philip A. Mawby:
High doped MBE Si p-n and n-n heterojunction diodes on 4H-SiC. 1233-1237 - Muhammad Nawaz, Wolfgang Molzer, Stefan Decker, Luis-Felipe Giles, Thomas Schulz:
On the device design assessment of multigate FETs (MuGFETs) using full process and device simulation with 3D TCAD. 1238-1251 - Daya Ram Sahu:
Studies on the properties of sputter-deposited Ag-doped ZnO films. 1252-1256 - Ching-Liang Dai, Shih-Chieh Lin, Ming-Wei Chang:
Fabrication and characterization of a microelectromechanical tunable capacitor. 1257-1262 - Abdul Manaf Hashim, Seiya Kasai, Tamotsu Hashizume, Hideki Hasegawa:
Integration of interdigital-gated plasma wave device for proximity communication system application. 1263-1267 - Abdul Manaf Hashim, Seiya Kasai, Kouichi Iizuka, Tamotsu Hashizume, Hideki Hasegawa:
Novel structure of GaAs-based interdigital-gated HEMT plasma devices for solid-state THz wave amplifier. 1268-1272 - Francesco Giuseppe Della Corte, Fortunato Pezzimenti, Roberta Nipoti:
Simulation and experimental results on the forward J-V characteristic of Al implanted 4H-SiC p-i-n diodes. 1273-1279
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