"Effect of In content of the buffer layer on crystalline quality and ..."

Tiemin Zhang et al. (2007)

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DOI: 10.1016/J.MEJO.2007.01.015

access: closed

type: Journal Article

metadata version: 2020-02-22

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Tiemin Zhang, Guoqing Miao, Yixin Jin, Jianchun Xie, Hong Jiang, Zhiming Li, Hang Song:
Effect of In content of the buffer layer on crystalline quality and electrical property of In_0.82Ga_0.18As/InP grown by LP-MOCVD. Microelectron. J. 38(3): 398-400 (2007)

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