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research-article

Electrical analysis and modeling of floating-gate fault

Published: 01 November 2006 Publication History

Abstract

It is demonstrated that a floating gate transistor (FGT) is influenced by its topological environment. The equivalent gate-to-source voltage of the FGT depends on the initial charges trapped in the gate oxide, the surrounding potential of metal lines and the drain-to-source voltage of the FGT itself. An electrical study of the floating gate fault is presented. A theoretical model taking into account the influence of the transistor's environment is proposed. Analytical expressions for the equivalent gate-to-source voltage are derived, and the FGTs electrical operation mode is analyzed. This model is validated by SPICE simulations and by actual device measurements. The problem of testing for FGTs is discussed

Cited By

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  • (2022)B-open Defect: A Novel Defect Model in FinFET TechnologyACM Journal on Emerging Technologies in Computing Systems10.1145/356424419:1(1-19)Online publication date: 9-Dec-2022
  • (2019)Incomplete Tests for Undetectable Faults to Improve Test Set QualityACM Transactions on Design Automation of Electronic Systems10.1145/330649324:2(1-13)Online publication date: 13-Feb-2019
  • (2017)A bridging fault model for line coverage in the presence of undetected transition faultsProceedings of the Conference on Design, Automation & Test in Europe10.5555/3130379.3130603(938-941)Online publication date: 27-Mar-2017
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cover image IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems  Volume 11, Issue 11
November 2006
142 pages

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IEEE Press

Publication History

Published: 01 November 2006

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Cited By

View all
  • (2022)B-open Defect: A Novel Defect Model in FinFET TechnologyACM Journal on Emerging Technologies in Computing Systems10.1145/356424419:1(1-19)Online publication date: 9-Dec-2022
  • (2019)Incomplete Tests for Undetectable Faults to Improve Test Set QualityACM Transactions on Design Automation of Electronic Systems10.1145/330649324:2(1-13)Online publication date: 13-Feb-2019
  • (2017)A bridging fault model for line coverage in the presence of undetected transition faultsProceedings of the Conference on Design, Automation & Test in Europe10.5555/3130379.3130603(938-941)Online publication date: 27-Mar-2017
  • (2016)Effectiveness of Low-Voltage Testing to Detect Interconnect Open Defects Under Process VariationsIEEE Transactions on Very Large Scale Integration (VLSI) Systems10.1109/TVLSI.2015.239793424:1(378-382)Online publication date: 1-Jan-2016
  • (2009)Partitioned n-detection test generationProceedings of the 19th ACM Great Lakes symposium on VLSI10.1145/1531542.1531566(93-98)Online publication date: 10-May-2009
  • (2008)On tests to detect via opens in digital CMOS circuitsProceedings of the 45th annual Design Automation Conference10.1145/1391469.1391682(840-845)Online publication date: 8-Jun-2008
  • (2005)Detection probabilities of interconnect breaksIntegration, the VLSI Journal10.5555/1062115.171208138:3(451-465)Online publication date: 1-Jan-2005
  • (2004)Estimating detection probability of interconnect opens using stuck-at testsProceedings of the 14th ACM Great Lakes symposium on VLSI10.1145/988952.989014(254-259)Online publication date: 26-Apr-2004
  • (2002)A Test Design Method for Floating Gate Defects (FGD) in Analog Integrated CircuitsProceedings of the conference on Design, automation and test in Europe10.5555/882452.874365Online publication date: 4-Mar-2002
  • (2001)CMOS open defect detection by supply current testProceedings of the conference on Design, automation and test in Europe10.5555/367072.367358Online publication date: 13-Mar-2001
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