research-article

Experimental Verification and Analysis of the Acceleration Factor Model for 3-D nand Flash Memory

Authors:

Xiyuan PengAuthors Info & Claims

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Volume 41, Issue 10

Pages 3543 - 3547

https://doi.org/10.1109/TCAD.2021.3127860

Published: 01 October 2022 Publication History

Abstract

With the increasing density of flash memory, its service life is declining. As the most important technical index of a flash device, flash retention parameters often need to consume a substantial amount of time to be tested. With a view toward reducing the test period, the most popular method currently is to speedup the retention loss of flash memory at high temperatures. However, since the retention loss of flash memory is the result of a mixture of multiple failure mechanisms, the Arrhenius model with a single apparent activation energy (<inline-formula> <tex-math notation="LaTeX">$E_{aa}$ </tex-math></inline-formula>) has significant limitations in calculating the high-temperature acceleration factor for the retention loss of flash memory. In this article, based on a large number of real experiments, we have studied the retention characteristics of the flash memory in high-temperature environments and closely tracked the change of <inline-formula> <tex-math notation="LaTeX">$E_{aa}$ </tex-math></inline-formula> at different temperatures, retention time, and program/erase (P/E) cycle count. The experimental results show that the equivalent acceleration factor (AF) grows rapidly with retention time at the beginning of flash retention and that flash with a high P/E cycle count has a faster AF growth rate.

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Cited By

Wei DFeng HLiu MSong YPiao ZHu CQiao L(2023)Edge Word-Line Reliability Problem in 3-D NAND Flash Memory: Observations, Analysis, and SolutionsIEEE Transactions on Very Large Scale Integration (VLSI) Systems10.1109/TVLSI.2023.324918331:6(861-873)Online publication date: 1-Jun-2023
https://dl.acm.org/doi/10.1109/TVLSI.2023.3249183

Index Terms

Experimental Verification and Analysis of the Acceleration Factor Model for 3-D nand Flash Memory
1. General and reference
2. Hardware

Index terms have been assigned to the content through auto-classification.

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Published: 01 October 2022

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Cited By

Wei DFeng HLiu MSong YPiao ZHu CQiao L(2023)Edge Word-Line Reliability Problem in 3-D NAND Flash Memory: Observations, Analysis, and SolutionsIEEE Transactions on Very Large Scale Integration (VLSI) Systems10.1109/TVLSI.2023.324918331:6(861-873)Online publication date: 1-Jun-2023
https://dl.acm.org/doi/10.1109/TVLSI.2023.3249183

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