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Nanometer MOSFET effects on the minimum-energy point of 45nm subthreshold logic

Published: 19 August 2009 Publication History

Abstract

In this paper, we observe that minimum energy Emin of subthreshold logic dramatically increases when reaching 45nm node. We demonstrate by circuit simulation and analytical modeling that this increase comes from the combined effects of variability, gate leakage and DIBL. We then investigate the new impact of MOSFET parameters on Emin in nanometer technologies. We finally propose an optimum MOSFET selection intended for subthreshold circuit designers, which favors low-Vt mid-Lg devices in standard 45nm GP technology. The use of such optimum MOSFETs yields 35% Emin reduction for a benchmark multiplier with good speed performances and negligible area overhead.

References

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      cover image ACM Conferences
      ISLPED '09: Proceedings of the 2009 ACM/IEEE international symposium on Low power electronics and design
      August 2009
      452 pages
      ISBN:9781605586847
      DOI:10.1145/1594233
      Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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      Published: 19 August 2009

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      Author Tags

      1. cmos digital integrated circuits
      2. gate leakage
      3. short-channel effects
      4. subthreshold logic
      5. ultra-low power
      6. variability

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      ISLPED '09 Paper Acceptance Rate 72 of 208 submissions, 35%;
      Overall Acceptance Rate 398 of 1,159 submissions, 34%

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      • (2022)Synthesis of Early Output Quasi Delay-Insensitive Combinational Circuits2022 IEEE ANDESCON10.1109/ANDESCON56260.2022.9989998(1-6)Online publication date: 16-Nov-2022
      • (2021)Synthesis of Quasi Delay Insensitive Asynchronous State Machines from Synchronous Specifications2021 IEEE XXVIII International Conference on Electronics, Electrical Engineering and Computing (INTERCON)10.1109/INTERCON52678.2021.9532653(1-4)Online publication date: 5-Aug-2021
      • (2020)An Interface with Two-Phase Delay-Insensitive Global Communication for GALS Systems2020 IEEE ANDESCON10.1109/ANDESCON50619.2020.9272061(1-6)Online publication date: 13-Oct-2020
      • (2020)IntroductionDual Mode Logic10.1007/978-3-030-40786-5_1(1-24)Online publication date: 16-Dec-2020
      • (2020)The Future of Ultra-Low Power SOTB CMOS Technology and ApplicationsNANO-CHIPS 203010.1007/978-3-030-18338-7_6(47-88)Online publication date: 9-Jun-2020
      • (2018)Synthesis of QDI AFSMs from XBM specifications2018 2nd Conference on PhD Research in Microelectronics and Electronics Latin America (PRIME-LA)10.1109/PRIME-LA.2018.8370389(1-4)Online publication date: Mar-2018
      • (2017)GDI logic implementation of uniform sized CSLA architectures in 45nm SOI technologyMicroprocessors & Microsystems10.1016/j.micpro.2017.01.00449:C(18-27)Online publication date: 1-Mar-2017
      • (2017)Alternative Logic Families for Energy-Efficient and High Performance Chip DesignGreen Photonics and Electronics10.1007/978-3-319-67002-7_6(139-172)Online publication date: 19-Nov-2017
      • (2017)Scaling Trends for Dual-Rail Logic Styles Against Side-Channel Attacks: A Case-StudyConstructive Side-Channel Analysis and Secure Design10.1007/978-3-319-64647-3_2(19-33)Online publication date: 29-Jul-2017
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