research-article

BLESS: a simple and efficient scheme for prolonging PCM lifetime

Authors:

Marjan Asadinia,

Hamid Sarbazi-AzadAuthors Info & Claims

DAC '16: Proceedings of the 53rd Annual Design Automation Conference

Article No.: 93, Pages 1 - 6

https://doi.org/10.1145/2897937.2897993

Published: 05 June 2016 Publication History

Abstract

Limited endurance problem and low cell reliability are main challenges of phase change memory (PCM) as an alternative to DRAM. To further prolong the lifetime of a PCM device, there exist a number of techniques that can be grouped in two categories: 1) reducing the write rate to PCM cells, and 2) handling cell failures when faults occur. Our experiments confirm that during write operations, an extensive non-uniformity in bit ips is exhibited. To reduce this non-uniformity, we present byte-level shifting scheme (BLESS) which reduces write pressure over hot cells of blocks. Additionally, this shifting mechanism can be used for error recovery purpose by using the MLC capability of PCM and manipulating the data block to recover faulty cells. Evaluation results for multi-threaded workloads reveal 14-25% improvement in lifetime over existing state-of-the-art schemes.

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Cited By

Ekoniak JRumale AAsadinia M(2025)ML-PreP: Machine Learning Based Error Prediction for Phase Change Memory2025 IEEE 15th Annual Computing and Communication Workshop and Conference (CCWC)10.1109/CCWC62904.2025.10903761(00909-00917)Online publication date: 6-Jan-2025
https://doi.org/10.1109/CCWC62904.2025.10903761
Akbarzadeh NDarabi SGheibi-Fetrat AMirzaei ASadrosadati MSarbazi-Azad H(2024)H3DM: A High-bandwidth High-capacity Hybrid 3D Memory Design for GPUsProceedings of the ACM on Measurement and Analysis of Computing Systems10.1145/36390388:1(1-28)Online publication date: 21-Feb-2024
https://dl.acm.org/doi/10.1145/3639038
S AKapoor H(2024)Opportunistic Migration for Hybrid Memories While Mitigating Aging Effects2024 IEEE 42nd International Conference on Computer Design (ICCD)10.1109/ICCD63220.2024.00077(462-469)Online publication date: 18-Nov-2024
https://doi.org/10.1109/ICCD63220.2024.00077
Show More Cited By

Index Terms

BLESS: a simple and efficient scheme for prolonging PCM lifetime
1. Computer systems organization
  1. Dependable and fault-tolerant systems and networks
    1. Processors and memory architectures
2. Hardware
  1. Emerging technologies
    1. Memory and dense storage

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DRAM technology challenges have increased the necessity to adapt to the emerging memory technologies like Phase-Change Memory (PCM or PRAM). While such emerging technologies provide benefits like storage density, nonvolatility, and low energy ...

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cover image ACM Other conferences

DAC '16: Proceedings of the 53rd Annual Design Automation Conference

June 2016

1048 pages

ISBN:9781450342360

DOI:10.1145/2897937

Copyright © 2016 ACM.

Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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Publication History

Published: 05 June 2016

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DAC '16

DAC '16: The 53rd Annual Design Automation Conference 2016

June 5 - 9, 2016

Texas, Austin

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Overall Acceptance Rate 1,770 of 5,499 submissions, 32%

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Cited By

Ekoniak JRumale AAsadinia M(2025)ML-PreP: Machine Learning Based Error Prediction for Phase Change Memory2025 IEEE 15th Annual Computing and Communication Workshop and Conference (CCWC)10.1109/CCWC62904.2025.10903761(00909-00917)Online publication date: 6-Jan-2025
https://doi.org/10.1109/CCWC62904.2025.10903761
Akbarzadeh NDarabi SGheibi-Fetrat AMirzaei ASadrosadati MSarbazi-Azad H(2024)H3DM: A High-bandwidth High-capacity Hybrid 3D Memory Design for GPUsProceedings of the ACM on Measurement and Analysis of Computing Systems10.1145/36390388:1(1-28)Online publication date: 21-Feb-2024
https://dl.acm.org/doi/10.1145/3639038
S AKapoor H(2024)Opportunistic Migration for Hybrid Memories While Mitigating Aging Effects2024 IEEE 42nd International Conference on Computer Design (ICCD)10.1109/ICCD63220.2024.00077(462-469)Online publication date: 18-Nov-2024
https://doi.org/10.1109/ICCD63220.2024.00077
S ABhuinya DKapoor H(2023)WIB-SAR: Write Intensity Based Selective Address Remapping2023 36th International Conference on VLSI Design and 2023 22nd International Conference on Embedded Systems (VLSID)10.1109/VLSID57277.2023.00022(1-6)Online publication date: Jan-2023
https://doi.org/10.1109/VLSID57277.2023.00022
Zhang CSun HLi SWang YChen HLiu H(2023)A Survey of Memory-Centric Energy Efficient Computer ArchitectureIEEE Transactions on Parallel and Distributed Systems10.1109/TPDS.2023.329759534:10(2657-2670)Online publication date: Oct-2023
https://doi.org/10.1109/TPDS.2023.3297595
Nguyen TImran MChoi JYang J(2023)CRAFT: Criticality-Aware Fault-Tolerance Enhancement Techniques for Emerging Memories-Based Deep Neural NetworksIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems10.1109/TCAD.2023.324065942:10(3289-3300)Online publication date: Oct-2023
https://doi.org/10.1109/TCAD.2023.3240659
S AKapoor H(2023)AGRAS: Aging and memory request rate aware scheduler for PCM memories2023 24th International Symposium on Quality Electronic Design (ISQED)10.1109/ISQED57927.2023.10129369(1-8)Online publication date: 5-Apr-2023
https://doi.org/10.1109/ISQED57927.2023.10129369
Zhang JWang CZhu ZKline DJones AYang HWang Y(2023)Realizing Extreme Endurance Through Fault-aware Wear Leveling and Improved Tolerance2023 IEEE International Symposium on High-Performance Computer Architecture (HPCA)10.1109/HPCA56546.2023.10071093(964-976)Online publication date: Feb-2023
https://doi.org/10.1109/HPCA56546.2023.10071093
Kulandai ARose JSchwarz T(2022)Gray counters for non-volatile memoriesMemories - Materials, Devices, Circuits and Systems10.1016/j.memori.2022.1000142(100014)Online publication date: Oct-2022
https://doi.org/10.1016/j.memori.2022.100014
Nath AKapoor H(2021)SWEL-COFAE : Wear Leveling and Adaptive Encoding Assisted Compression of Frequent Words in Non-Volatile Main MemoriesIEEE Transactions on Computers10.1109/TC.2021.3126156(1-1)Online publication date: 2021
https://doi.org/10.1109/TC.2021.3126156
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