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BLESS: a simple and efficient scheme for prolonging PCM lifetime

Published: 05 June 2016 Publication History

Abstract

Limited endurance problem and low cell reliability are main challenges of phase change memory (PCM) as an alternative to DRAM. To further prolong the lifetime of a PCM device, there exist a number of techniques that can be grouped in two categories: 1) reducing the write rate to PCM cells, and 2) handling cell failures when faults occur. Our experiments confirm that during write operations, an extensive non-uniformity in bit ips is exhibited. To reduce this non-uniformity, we present byte-level shifting scheme (BLESS) which reduces write pressure over hot cells of blocks. Additionally, this shifting mechanism can be used for error recovery purpose by using the MLC capability of PCM and manipulating the data block to recover faulty cells. Evaluation results for multi-threaded workloads reveal 14-25% improvement in lifetime over existing state-of-the-art schemes.

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  • (2023)WIB-SAR: Write Intensity Based Selective Address Remapping2023 36th International Conference on VLSI Design and 2023 22nd International Conference on Embedded Systems (VLSID)10.1109/VLSID57277.2023.00022(1-6)Online publication date: Jan-2023
  • (2023)A Survey of Memory-Centric Energy Efficient Computer ArchitectureIEEE Transactions on Parallel and Distributed Systems10.1109/TPDS.2023.329759534:10(2657-2670)Online publication date: Oct-2023
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cover image ACM Other conferences
DAC '16: Proceedings of the 53rd Annual Design Automation Conference
June 2016
1048 pages
ISBN:9781450342360
DOI:10.1145/2897937
Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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Published: 05 June 2016

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Author Tags

  1. fault tolerant
  2. hard error
  3. lifetime
  4. phase change memory

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Overall Acceptance Rate 1,770 of 5,499 submissions, 32%

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Cited By

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  • (2024)H3DM: A High-bandwidth High-capacity Hybrid 3D Memory Design for GPUsProceedings of the ACM on Measurement and Analysis of Computing Systems10.1145/36390388:1(1-28)Online publication date: 21-Feb-2024
  • (2023)WIB-SAR: Write Intensity Based Selective Address Remapping2023 36th International Conference on VLSI Design and 2023 22nd International Conference on Embedded Systems (VLSID)10.1109/VLSID57277.2023.00022(1-6)Online publication date: Jan-2023
  • (2023)A Survey of Memory-Centric Energy Efficient Computer ArchitectureIEEE Transactions on Parallel and Distributed Systems10.1109/TPDS.2023.329759534:10(2657-2670)Online publication date: Oct-2023
  • (2023)CRAFT: Criticality-Aware Fault-Tolerance Enhancement Techniques for Emerging Memories-Based Deep Neural NetworksIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems10.1109/TCAD.2023.324065942:10(3289-3300)Online publication date: Oct-2023
  • (2023)AGRAS: Aging and memory request rate aware scheduler for PCM memories2023 24th International Symposium on Quality Electronic Design (ISQED)10.1109/ISQED57927.2023.10129369(1-8)Online publication date: 5-Apr-2023
  • (2023)Realizing Extreme Endurance Through Fault-aware Wear Leveling and Improved Tolerance2023 IEEE International Symposium on High-Performance Computer Architecture (HPCA)10.1109/HPCA56546.2023.10071093(964-976)Online publication date: Feb-2023
  • (2022)Gray counters for non-volatile memoriesMemories - Materials, Devices, Circuits and Systems10.1016/j.memori.2022.1000142(100014)Online publication date: Oct-2022
  • (2021)SWEL-COFAE : Wear Leveling and Adaptive Encoding Assisted Compression of Frequent Words in Non-Volatile Main MemoriesIEEE Transactions on Computers10.1109/TC.2021.3126156(1-1)Online publication date: 2021
  • (2021)Low-Cost and Effective Fault-Tolerance Enhancement Techniques for Emerging Memories-Based Deep Neural Networks2021 58th ACM/IEEE Design Automation Conference (DAC)10.1109/DAC18074.2021.9586112(1075-1080)Online publication date: 5-Dec-2021
  • (2019)A Survey on PCM Lifetime Enhancement SchemesACM Computing Surveys10.1145/333225752:4(1-38)Online publication date: 30-Aug-2019
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