A High Capacitive Ratio and Low Actuation Voltage RF MEMS Switch for Multi Band: Design and Performance Analysis
Authors: 
Yibin Liu, Ke Han, Zhuoxi Jiang, Nijun Ye, Peiming WangAuthors Info & Claims
Yibin Liu, Ke Han, Zhuoxi Jiang, Nijun Ye, Peiming WangAuthors Info & ClaimsPages 305 - 309
Abstract
Radiofrequency (RF) micro-electro-mechanical systems (MEMS) have paid more and more attention to miniaturization and integration in various passive devices in recent years. This paper proposes a multiband RF MEMS switch with a high capacitance ratio, wideband, and low actuation voltage. Then, it is designed, simulated, and fabricated for performance analysis. The designed switch includes four cantilever beams, which are driven by four DC electrodes for different configurations to achieve multiband. Based on the metal-insulator-metal (MIM) floating metal, the capacitance ratio of the switch is effectively improved. The cantilever beam is fixed by introducing the concept of non-uniform meander, which improves the reliability of the switch and reduces the actuation voltage of the switch. Simulation using finite element (FEM) tools proved that the switch has an insertion loss of -0.08dB up to 40GHz and actuation voltage is 2.54V. The maximum isolation is 32.6 dB in C band, 37.2 dB in X band, 42.1dB in Ku band, 47.6 dB in K band, and 58.3dB in Ka band.
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Published In
February 2021
342 pages
ISBN:9781450389174
DOI:10.1145/3456415
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Published: 06 June 2021
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ICCBN 2021
ICCBN 2021: 2021 9th International Conference on Communications and Broadband Networking
February 25 - 27, 2021
Shanghai, China
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