A high-performance memory management scheme

Phase Change Memory (PCM) is a promising DRAM replacement in embedded systems due to its attractive characteristics including low static power consumption and high density. However, long write latency is one of the major drawbacks in current PCM ...

In general, NAND flash memory has advantages in low power consumption, storage capacity, and fast erase/write performance in contrast to NOR flash. But, main drawback of the NAND flash memory is the slow access time for random read operations. Therefore,...

Phase Change Memory (PCM) has recently attracted a lot of attention as a scalable alternative to DRAM for main memory systems. As the need for high-density memory increases, DRAM has proven to be less attractive from the point of view of scaling and ...