research-article

Experimental Demonstration of STT-MRAM-based Nonvolatile Instantly On/Off System for IoT Applications: Case Studies

Authors:

Weisheng ZhaoAuthors Info & Claims

ACM Transactions on Embedded Computing Systems, Volume 22, Issue 2

Article No.: 29, Pages 1 - 24

https://doi.org/10.1145/3546193

Published: 27 January 2023 Publication History

Abstract

Energy consumption has been a big challenge for electronic devices, particularly for battery-powered Internet of Things (IoT) equipment. To address such a challenge, on the one hand, low-power electronic design methodologies and novel power management techniques have been proposed, such as nonvolatile memories and instantly on/off systems; on the other hand, the energy harvesting technology by collecting signals from human activity or the environment has attracted widespread attention in the IoT area. However, the system with self-powered energy harvesting may suffer frequent energy failures or fluctuating energy conditions, which degrade system reliability and user experience. Therefore, how to make the system under unreliable power inputs operate correctly and efficiently is one of the most critical issues for energy harvesting technology. In this article, we built an instantly on/off system based on nonvolatile STT-MRAM for IoT applications, which can instantly power on/off under different conditions of the harvested energy. The system powers on and operates normally when the harvested energy is enough (over the preset threshold); otherwise, the system powers off and stores the operational data back to the nonvolatile STT-MRAM. We described implementations of the hardware/software co-designed architecture (with image acquisition as an example) based on the commercialized 32 MB STT-MRAM, and we experimentally demonstrated the system functionality and efficiency under five typical energy harvesting scenarios, including radio frequency, thermal, solar, piezoelectric, and WIFI. Our experimental results show that the power consumption and data restore time were reduced by 15.1% and 714 times, respectively, in comparison with the DRAM-based counterpart.

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Cited By

Suzuki DHanyu T(2024)Design of a spin–orbit-torque-based self-terminated nonvolatile register for a write/leakage-energy-minimized backup operationJapanese Journal of Applied Physics10.35848/1347-4065/ad2a9c63:4(04SP09)Online publication date: 20-Mar-2024
https://doi.org/10.35848/1347-4065/ad2a9c
Kallinatha HRai STalawar B(2024)A Detailed Study of SOT-MRAM as an Alternative to DRAM Primary Memory in Multi-Core EnvironmentIEEE Access10.1109/ACCESS.2024.335215112(7224-7243)Online publication date: 2024
https://doi.org/10.1109/ACCESS.2024.3352151
Sun 孙 HHan 韩 RQin 秦 HZhao 赵 XXie 谢 ZWei 魏 DZhao 赵 J(2024) Current-Induced Magnetization Switching Behavior in Perpendicular Magnetized L1 0 -MnAl/B2-CoGa Bilayer Chinese Physics Letters10.1088/0256-307X/41/5/05750341:5(057503)Online publication date: 1-May-2024
https://doi.org/10.1088/0256-307X/41/5/057503
Show More Cited By

Index Terms

Experimental Demonstration of STT-MRAM-based Nonvolatile Instantly On/Off System for IoT Applications: Case Studies
1. Computer systems organization
  1. Architectures
    1. Other architectures
      1. Reconfigurable computing
  2. Embedded and cyber-physical systems
    1. Embedded systems
      1. Firmware

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cover image ACM Transactions on Embedded Computing Systems

ACM Transactions on Embedded Computing Systems Volume 22, Issue 2

March 2023

560 pages

ISSN:1539-9087

EISSN:1558-3465

DOI:10.1145/3572826

Editor:
Tulika Mitra
National University of Singapore, Singapore

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ACM Journals for the Design of Smart and Connected Systems

Publication History

Published: 27 January 2023

Online AM: 05 July 2022

Accepted: 23 June 2022

Revised: 09 May 2022

Received: 01 October 2021

Published in TECS Volume 22, Issue 2

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National Natural Science Foundation of China
International Collaboration Project
Beijing Nova Program from Beijing Municipal Science and Technology Commission
Beijing Natural Science Foundation

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Cited By

Suzuki DHanyu T(2024)Design of a spin–orbit-torque-based self-terminated nonvolatile register for a write/leakage-energy-minimized backup operationJapanese Journal of Applied Physics10.35848/1347-4065/ad2a9c63:4(04SP09)Online publication date: 20-Mar-2024
https://doi.org/10.35848/1347-4065/ad2a9c
Kallinatha HRai STalawar B(2024)A Detailed Study of SOT-MRAM as an Alternative to DRAM Primary Memory in Multi-Core EnvironmentIEEE Access10.1109/ACCESS.2024.335215112(7224-7243)Online publication date: 2024
https://doi.org/10.1109/ACCESS.2024.3352151
Sun 孙 HHan 韩 RQin 秦 HZhao 赵 XXie 谢 ZWei 魏 DZhao 赵 J(2024) Current-Induced Magnetization Switching Behavior in Perpendicular Magnetized L1 0 -MnAl/B2-CoGa Bilayer Chinese Physics Letters10.1088/0256-307X/41/5/05750341:5(057503)Online publication date: 1-May-2024
https://doi.org/10.1088/0256-307X/41/5/057503
Li YZhang HWang XCai HZhang YLv SLiu RZhao WTakahashi A(2023)Toward Energy-Efficient Sparse Matrix-Vector Multiplication with near STT-MRAM Computing ArchitectureProceedings of the 28th Asia and South Pacific Design Automation Conference10.1145/3566097.3567859(222-227)Online publication date: 16-Jan-2023
https://dl.acm.org/doi/10.1145/3566097.3567859

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