Overview
- Presents the first comprehensive reference to reliability and repair techniques for nano-scale memories
- Covers both the mathematical foundations and engineering applications of yield and reliability in nano-scale memories
- Includes a variety of practical circuits and logic, critical for higher yield and reliability, which have been proven successful during the authors’ extensive experience in developing memories and low-voltage CMOS circuits
- Includes supplementary material: sn.pub/extras
Part of the book series: Integrated Circuits and Systems (ICIR)
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About this book
Yield and reliability of memories have degraded with device and voltage scaling in the nano-scale era, due to ever-increasing hard/soft errors and device parameter variations. This book systematically describes these yield and reliability issues in terms of mathematics and engineering, as well as an array of repair techniques, based on the authors’ long careers in developing memories and low-voltage CMOS circuits. Nanoscale Memory Repair gives a detailed explanation of the various yield models and calculations, as well as various, practical logic and circuits that are critical for higher yield and reliability.
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Keywords
Table of contents (6 chapters)
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Front Matter
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Back Matter
Authors and Affiliations
Bibliographic Information
Book Title: Nanoscale Memory Repair
Authors: Masashi Horiguchi, Kiyoo Itoh
Series Title: Integrated Circuits and Systems
DOI: https://doi.org/10.1007/978-1-4419-7958-2
Publisher: Springer New York, NY
eBook Packages: Engineering, Engineering (R0)
Copyright Information: Springer Science+Business Media, LLC 2011
Hardcover ISBN: 978-1-4419-7957-5Published: 13 January 2011
Softcover ISBN: 978-1-4614-2794-0Published: 24 February 2013
eBook ISBN: 978-1-4419-7958-2Published: 11 January 2011
Series ISSN: 1558-9412
Series E-ISSN: 1558-9420
Edition Number: 1
Number of Pages: X, 218
Topics: Circuits and Systems, Computer-Aided Engineering (CAD, CAE) and Design