Abstract
Nanometre-scale electronic structures are of both fundamental and technological interest: they provide a link between molecular and solid state physics, and have the potential to reach far higher device densities than is possible with conventional semiconductor technology1,2. Examples of such structures include quantum dots,which can function as single-electron transistors3,4 (although theirsensitivity to individual stray charges might make them unsuitable for large-scale devices) and semiconducting carbon nanotubes several hundred nanometres in length, which have been used to create a field-effect transistor5. Much smaller devices could be made by joining two nanotubes or nanowires to create, for example, metalâsemiconductor junctions, in which the junction area would be about 1ânm2 for single-walled carbon nanotubes. Electrical measurements of nanotube âmatsâ have shown the behaviour expected for a metalâsemiconductor junction6. However, proposed nanotube junction structures7 have not been explicitly observed, nor have methods been developed to prepare them. Here we report controlled, catalytic growth of metalâsemiconductor junctions between carbon nanotubes and silicon nanowires, and show that these junctions exhibit reproducible rectifying behaviour.
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References
Carter, F. L. Molecular Electronic Devices(Marcel Dekker, New York, (1982).
Timp, G. Nanoscience and Technology(AIP Press, New York, in the press).
Devoret, M. H., Esteve, D. & Urbina, C. Single-electron transfer in metallic nanostructures. Nature 360, 547â553 (1992).
Klein, D. L., Roth, R., Lim, A. K. L., Alivisator, A. P. & McEuen, P. L. Asingle-electron transistor made from a cadmium selenide nanocrystal. Nature 389, 699â701 (1997).
Tans, S. J., Verschueren, A. R. M. & Dekker, C. Room-temperature transistor based on a single carbon nanotube. Nature 393, 49â52 (1998).
Collins, P. G., Zettl, A., Bando, H., Thess, A. & Smalley, R. E. Nanotube nanodevice. Science 278, 100â103 (1997).
Chico, L., Crespi, V. H., Benedict, L. X., Louie, S. G. & Cohen, M. L. Pure carbon nanoscale devices: nanotube heterojunctions. Phys. Rev. Lett. 76, 971â974 (1996).
Morales, A. & Lieber, C. M. Alaser ablation method for the synthesis of crystalline semiconductor nanowires. Science 279, 208â211 (1998).
Fonseca, A. et al . Synthesis of single- and multi-wall carbon nanotubes over supported catalysts. Appl. Phys. A 67, 11â22 (1998).
Kong, J., Cassell, A. M. & Dai, H. Chemical vapor deposition of methane for single-walled carbon nanotubes. Chem. Phys. Lett. 292, 567â574 (1998).
Dai, H., Wong, E. W. & Lieber, C. M. Probing electrical transport in nanomaterials: conductivity of individual carbon nanotubes. Science 272, 523â526 (1996).
Rhoderick, E. H. MetalâSemiconductor Contacts(Clarendon, Oxford, (1978).
Dai, H., Hafner, J. H., Rinzler, A. G., Colbert, D. T. & Smalley, R. E. Nanotubes as nanoprobes in scanning probe microscopy. Nature 384, 147â150 (1996).
Givargizov, E. I. in Current Topics in Materials Science(Kaldis, E. ed.) Vol. V1, 79â145 (North-Holland, New York, (1978).
Rao, K. S. R. K., Kumar, V., Premachandran, S. K. & Raghunath, K. P. Relationship of the gold related donor and acceptor levels in silicon. J. Appl. Phys. 69, 2714â2716 (1991).
Frank, S., Poncharal, P., Wang, Z. L. & de Heer, W. A. Carbon nanotube quantum resistors. Science 280, 1744â1746 (1998).
McCafferty, P. G., Sellai, A., Dawson, P. & Elabd, H. Barrier characteristics of PtSi/p-Si Schottky diodes as determined from I âV âT measurements. Solid-State Electron. 39, 583â592 (1996).
Ebbesen, T. W. & Ajayan, P. M. Large-scale synthesis of carbon nanotubes. Nature 358, 220â222 (1992).
Acknowledgements
We thank P. Kim and J. L. Huang for helpful discussions, and H. Wu and T. Deng for the Au electroplating solution. C.M.L. acknowledges support of this work by the ONR and NSF.
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Hu, J., Ouyang, M., Yang, P. et al. Controlled growth and electrical properties of heterojunctions of carbon nanotubes and silicon nanowires. Nature 399, 48â51 (1999). https://doi.org/10.1038/19941
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DOI: https://doi.org/10.1038/19941
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