In this paper, we propose low power and robust 6T SRAM cells. The cells are based on the Vt-control of the cross-coupled inverters of the SRAM cell to reduce leakage power when SRAM is in the idle mode. Using the Vt-control method along with the built-...
On-chip SRAM caches have come to dominate the total chip area and leakage power consumed in state-of-the-art microprocessor designs. Such large memories are necessary to attain high performance, however it is critical to minimize the idle currents drawn ...
Fully Depleted Silicon on Insulator (FDSOI) and Fin Field Effect Transistor (FinFET) are likely alternatives to traditional planar Bulk transistors for future technologies due to their respective promising ways of tackling the scalability issues with ...
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