Modeling of GaAs MESFET under back illumination
Authors: 
B. K. Mishra, L. Jolly, and K. PatilAuthors Info & Claims
B. K. Mishra, L. Jolly, and K. PatilAuthors Info & ClaimsFebruary 2011
Pages 1133 - 1138
Abstract
An analytical model of GaAs metal-semiconductor-field-effect transistor (MESFET) with non uniform doping is developed. The model presents the frequency dependent analytical model of GaAs MESFET under back illumination. Photovoltaic effects across the Schottky junction and active channel are considered to estimate various characteristics under different illumination conditions. The Continuity equations in the gate depletion and neutral regions are solved analytically under various illumination conditions. The frequency dependence of photovoltage at the Schottky contact (Vop) is evaluated. The drain current and channel conductance under A. C. and D. C. conditions are evaluated for various illuminated conditions. It has been observed from the results that when GaAs MESFET is illuminated from back there is more improvement in device characteristics as compared with the device under front illumination. This is due to improved absorption.
References
[1]
C. Baack. G. Elze and W. Walf, "GaAs MESFET: A High Speed optical detector", Electron letter, vol 13, pp. 193--193, 1977
[2]
B. K. Mishra," Computer Aided modeling of solidstate photodetectors", Ph. D thesis Birla institute of technology, Mesra, Ranchi, 1995.
[3]
Dr. B. K. Mishra, Lochan Jolly and Kalawati Patil, "Two Dimensional Modeling of Nonuniformly Doped MESFET under Illumination", International Conference on and Workshop on Emerging Trends and Technology 2010, TCET, Mumbai
[4]
Michael Shur, "GaAs Devices and Circuits", Plenum Press, New York and London, 1987.
[5]
M. Sze, "Physics of Semiconductor Devices", 2nd edition., New Delhi, 1982
[6]
Nandita Saha Roy, B. B. Pal and R. U. Khan," Frequency dependent characteristics of an ion implanted GaAs MESFET with opaque gate under illumination", Journal of Lightwave Technology, Vol. 18, Issue 2, Feb 2000, pp. 221--229.
[7]
Nandita Saha Roy, B. B. Pal and R. U. Khan, "Analysis of GaAs OPFET with Improved Optical Absorption under Back Illumination", Transactions on Electron Devices, Vol 46, No 12, December 1999
[8]
Nandita Saha Roy and B. B. Pal, "Frequency-Dependant OPFET Characteristics with Improved Absorption under Back Illumination", Journal of light wave technology, Vol 18, No 4, April 2000.
[9]
M. Shur, GaAs Devices and circuits, New York: Plenum, 1987, pp 309--322
[10]
Lochan Jolly and B. K. Mishra, "Modeling of MESFET with Gaussian Profile Active Region under illumination", International Conference, ICAC3--09, ACM DL 2009.
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- Modeling of GaAs MESFET under back illumination
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Published: 25 February 2011
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- Thakur College Of Engg. & Tech
ICWET '11: International Conference & Workshop on Emerging Trends in Technology
February 25 - 26, 2011
Maharashtra, Mumbai, India
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