2008 IEEE International Electron Devices Meeting, 2008
Atomistic modeling and optimized TCAD simulation strategy for Laser-only annealing device are sho... more Atomistic modeling and optimized TCAD simulation strategy for Laser-only annealing device are shown. Multiple laser annealing scans are modeled by using atomistic KMC. KMC clarified that dopant diffusion is changed as a function of laser scan number. SSRM with 1 nm special resolution is used for the 2-dimensional carrier distribution measurement and dopant active level determination. It is shown that
ABSTRACT In this letter, submelt laser anneal used to achieve ultrashallow junctions (USJs) in ca... more ABSTRACT In this letter, submelt laser anneal used to achieve ultrashallow junctions (USJs) in capped high- devices with TaN/TiN metal gate electrode is investigated. The submelt laser anneal results in USJ and sharp junction on both n- and pMOSFET devices. However, this process induces interface and bulk defects and reduces negative-bias temperature instability (NBTI) reliability additionally. It is shown that if the laser anneal is followed by a rapid thermal anneal, the laser-related damage decreases, and the NBTI robustness improves without altering the obtained junction sharpness.
A study of doping the pMOS Lightly Doped Drain (LDD) by Plasma Immersion Ion Implantation (P3i) w... more A study of doping the pMOS Lightly Doped Drain (LDD) by Plasma Immersion Ion Implantation (P3i) with BF3 is presented which demonstrates a better transistor performance compared to standard beam line Ion Implantation (I∕I). The benefit of P3i comes from the broad ...
The multi-gate architecture is considered as a key enabler for further CMOS scaling thanks to its... more The multi-gate architecture is considered as a key enabler for further CMOS scaling thanks to its improved electrostatics and short-channel effect control. FinFETs represent one of the architectures of interest within that family together with Ω-gates, Π-gates, gate-all-around ...
2008 IEEE International Electron Devices Meeting, 2008
Atomistic modeling and optimized TCAD simulation strategy for Laser-only annealing device are sho... more Atomistic modeling and optimized TCAD simulation strategy for Laser-only annealing device are shown. Multiple laser annealing scans are modeled by using atomistic KMC. KMC clarified that dopant diffusion is changed as a function of laser scan number. SSRM with 1 nm special resolution is used for the 2-dimensional carrier distribution measurement and dopant active level determination. It is shown that
ABSTRACT In this letter, submelt laser anneal used to achieve ultrashallow junctions (USJs) in ca... more ABSTRACT In this letter, submelt laser anneal used to achieve ultrashallow junctions (USJs) in capped high- devices with TaN/TiN metal gate electrode is investigated. The submelt laser anneal results in USJ and sharp junction on both n- and pMOSFET devices. However, this process induces interface and bulk defects and reduces negative-bias temperature instability (NBTI) reliability additionally. It is shown that if the laser anneal is followed by a rapid thermal anneal, the laser-related damage decreases, and the NBTI robustness improves without altering the obtained junction sharpness.
A study of doping the pMOS Lightly Doped Drain (LDD) by Plasma Immersion Ion Implantation (P3i) w... more A study of doping the pMOS Lightly Doped Drain (LDD) by Plasma Immersion Ion Implantation (P3i) with BF3 is presented which demonstrates a better transistor performance compared to standard beam line Ion Implantation (I∕I). The benefit of P3i comes from the broad ...
The multi-gate architecture is considered as a key enabler for further CMOS scaling thanks to its... more The multi-gate architecture is considered as a key enabler for further CMOS scaling thanks to its improved electrostatics and short-channel effect control. FinFETs represent one of the architectures of interest within that family together with Ω-gates, Π-gates, gate-all-around ...
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