I. INTRODUCTION Thanks to its exceptional properties, diamond in principle match the challenges o... more I. INTRODUCTION Thanks to its exceptional properties, diamond in principle match the challenges of high tech applications. It cumulates extreme and unsurpassed electronic and thermal properties, such as large mobility for both electrons and holes, the best thermal ...
IEEE Nanotechnology Materials and Devices Conference, 2009
Sub-micron gate length Metal Semiconductor Field Effect Transistors (MESFETs) have been realized ... more Sub-micron gate length Metal Semiconductor Field Effect Transistors (MESFETs) have been realized on polycrystalline diamond samples supplied by Element Six Ltd. and by Russian Academy of Science. RF performances are shown for devices realized on polycrystalline diamond samples of different quality, stating the successfully improvement and reliability of realization technology.
Abstract MetalSemiconductor Field Effect Transistors (MESFETs) were fabricated on polycrystall... more Abstract MetalSemiconductor Field Effect Transistors (MESFETs) were fabricated on polycrystalline diamond. Devices were realized to be employed in Microwave Integrated Circuits for satellite communications and high frequency power amplification, areas were diamond promise ...
ABSTRACT Diamond is one of the suitable semi-conductor for vacuum electronics replacement in hi... more ABSTRACT Diamond is one of the suitable semi-conductor for vacuum electronics replacement in high power and high frequency applications. Sub-micron gate-length (200 nm) Metal Semiconductor Field Effect Transistor (MESFETs) have been fabricated on h-terminated polycrystalline ...
IEEE Nanotechnology Materials and Devices Conference, 2009
Sub-micron gate length Metal Semiconductor Field Effect Transistors (MESFETs) have been realized ... more Sub-micron gate length Metal Semiconductor Field Effect Transistors (MESFETs) have been realized on polycrystalline diamond samples supplied by Element Six Ltd. and by Russian Academy of Science. RF performances are shown for devices realized on polycrystalline diamond samples of different quality, stating the successfully improvement and reliability of realization technology.
I. INTRODUCTION Thanks to its exceptional properties, diamond in principle match the challenges o... more I. INTRODUCTION Thanks to its exceptional properties, diamond in principle match the challenges of high tech applications. It cumulates extreme and unsurpassed electronic and thermal properties, such as large mobility for both electrons and holes, the best thermal ...
IEEE Nanotechnology Materials and Devices Conference, 2009
Sub-micron gate length Metal Semiconductor Field Effect Transistors (MESFETs) have been realized ... more Sub-micron gate length Metal Semiconductor Field Effect Transistors (MESFETs) have been realized on polycrystalline diamond samples supplied by Element Six Ltd. and by Russian Academy of Science. RF performances are shown for devices realized on polycrystalline diamond samples of different quality, stating the successfully improvement and reliability of realization technology.
Abstract MetalSemiconductor Field Effect Transistors (MESFETs) were fabricated on polycrystall... more Abstract MetalSemiconductor Field Effect Transistors (MESFETs) were fabricated on polycrystalline diamond. Devices were realized to be employed in Microwave Integrated Circuits for satellite communications and high frequency power amplification, areas were diamond promise ...
ABSTRACT Diamond is one of the suitable semi-conductor for vacuum electronics replacement in hi... more ABSTRACT Diamond is one of the suitable semi-conductor for vacuum electronics replacement in high power and high frequency applications. Sub-micron gate-length (200 nm) Metal Semiconductor Field Effect Transistor (MESFETs) have been fabricated on h-terminated polycrystalline ...
IEEE Nanotechnology Materials and Devices Conference, 2009
Sub-micron gate length Metal Semiconductor Field Effect Transistors (MESFETs) have been realized ... more Sub-micron gate length Metal Semiconductor Field Effect Transistors (MESFETs) have been realized on polycrystalline diamond samples supplied by Element Six Ltd. and by Russian Academy of Science. RF performances are shown for devices realized on polycrystalline diamond samples of different quality, stating the successfully improvement and reliability of realization technology.
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