G. Conte

... Autori: Pasciuto, B; Corsaro, A; Sinisi, F;Calvani, P; Rossi, MC; Conte, G; Ciccognani, W; Limiti, E. ... Settore Disciplinare: ING-INF/01. Lingua: eng. Tipologia: Intervento a convegno. Citazione: Pasciuto, B., Corsaro, A., Sinisi,... more

... Autori: Pasciuto, B; Corsaro, A; Sinisi, F;Calvani, P; Rossi, MC; Conte, G; Ciccognani, W; Limiti, E. ... Settore Disciplinare: ING-INF/01. Lingua: eng. Tipologia: Intervento a convegno. Citazione: Pasciuto, B., Corsaro, A., Sinisi, F., Calvani, P., Rossi, MC, Conte, G., et al. (2008). ...

Publication Date: 2003

Publication Name: Journal of Applied Physics

Research Interests:
Engineering, Applied Physics, Scanning Electron Microscopy, X Rays, Transport Properties, and 5 moreMathematical Sciences, Physical sciences, Grain Boundary, X ray diffraction, and Dark Current

Download (.pdf)

Sub-micron gate length Metal Semiconductor Field Effect Transistors (MESFETs) have been realized on polycrystalline diamond samples supplied by Element Six Ltd. and by Russian Academy of Science. RF performances are shown for devices... more

Sub-micron gate length Metal Semiconductor Field Effect Transistors (MESFETs) have been realized on polycrystalline diamond samples supplied by Element Six Ltd. and by Russian Academy of Science. RF performances are shown for devices realized on polycrystalline diamond samples of different quality, stating the successfully improvement and reliability of realization technology.

Publication Date: 2003

Publication Name: Journal of Applied Physics

Research Interests:
Engineering, Applied Physics, Scanning Electron Microscopy, X Rays, Transport Properties, and 5 moreMathematical Sciences, Physical sciences, Grain Boundary, X ray diffraction, and Dark Current

Publication Date: 2009

Publication Name: IEEE Nanotechnology Materials and Devices Conference

G. Conte

Publication Date: 2003

Publication Name: Journal of Applied Physics

Publication Date: 2009

Publication Name: IEEE Nanotechnology Materials and Devices Conference

Log In