IEEE Nanotechnology Materials and Devices Conference, 2009
Sub-micron gate length Metal Semiconductor Field Effect Transistors (MESFETs) have been realized ... more Sub-micron gate length Metal Semiconductor Field Effect Transistors (MESFETs) have been realized on polycrystalline diamond samples supplied by Element Six Ltd. and by Russian Academy of Science. RF performances are shown for devices realized on polycrystalline diamond samples of different quality, stating the successfully improvement and reliability of realization technology.
IEEE Nanotechnology Materials and Devices Conference, 2009
Sub-micron gate length Metal Semiconductor Field Effect Transistors (MESFETs) have been realized ... more Sub-micron gate length Metal Semiconductor Field Effect Transistors (MESFETs) have been realized on polycrystalline diamond samples supplied by Element Six Ltd. and by Russian Academy of Science. RF performances are shown for devices realized on polycrystalline diamond samples of different quality, stating the successfully improvement and reliability of realization technology.
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Papers by G. Conte