Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729), 2004
Abstract We report a comprehensive characterization of a 90 nm CMOS technology with Cu/SiCOH low-... more Abstract We report a comprehensive characterization of a 90 nm CMOS technology with Cu/SiCOH low-k interconnect BEOL. Significant material and integration engineering have led to the highest reliability, without degrading the performance expected from low-k. ...
2004 IEEE International Reliability Physics Symposium. Proceedings, 2004
Abstract Integration and development of Cu Back-End of Line (BEOL) with PECVD low-k organosilicat... more Abstract Integration and development of Cu Back-End of Line (BEOL) with PECVD low-k organosilicate glass (OSG, also called SiCOH, carbon-doped oxide, CDO, etc.) for 130 nm and 90 nm CMOS technologies has been reported by a number of institutions. Here we ...
Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729), 2004
Abstract We report a comprehensive characterization of a 90 nm CMOS technology with Cu/SiCOH low-... more Abstract We report a comprehensive characterization of a 90 nm CMOS technology with Cu/SiCOH low-k interconnect BEOL. Significant material and integration engineering have led to the highest reliability, without degrading the performance expected from low-k. ...
Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729), 2004
Abstract We report a comprehensive characterization of a 90 nm CMOS technology with Cu/SiCOH low-... more Abstract We report a comprehensive characterization of a 90 nm CMOS technology with Cu/SiCOH low-k interconnect BEOL. Significant material and integration engineering have led to the highest reliability, without degrading the performance expected from low-k. ...
2004 IEEE International Reliability Physics Symposium. Proceedings, 2004
Abstract Integration and development of Cu Back-End of Line (BEOL) with PECVD low-k organosilicat... more Abstract Integration and development of Cu Back-End of Line (BEOL) with PECVD low-k organosilicate glass (OSG, also called SiCOH, carbon-doped oxide, CDO, etc.) for 130 nm and 90 nm CMOS technologies has been reported by a number of institutions. Here we ...
Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729), 2004
Abstract We report a comprehensive characterization of a 90 nm CMOS technology with Cu/SiCOH low-... more Abstract We report a comprehensive characterization of a 90 nm CMOS technology with Cu/SiCOH low-k interconnect BEOL. Significant material and integration engineering have led to the highest reliability, without degrading the performance expected from low-k. ...
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Papers by J. Fitzsimmons