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    Pau Molet

    Solution processed organic photodetectors with a nanostructured active layer in the shape of a photonic crystal exhibit an improved NIR response, below the band gap of the active layer materials, that can be tuned by varying the lattice... more
    Solution processed organic photodetectors with a nanostructured active layer in the shape of a photonic crystal exhibit an improved NIR response, below the band gap of the active layer materials, that can be tuned by varying the lattice parameter. 
    High-index dielectric nanostructures have emerged as an appealing complement to plasmonic nanostructures, offering similar light management capabilities at the nanoscale but free from the inherent optical losses. Despite the great... more
    High-index dielectric nanostructures have emerged as an appealing complement to plasmonic nanostructures, offering similar light management capabilities at the nanoscale but free from the inherent optical losses. Despite the great interest in these all-dielectric architectures, their fabrication still requires cumbersome fabrication techniques that limit their implementation in many applications. Hence, the great interest in alternative scalable procedures. Among those, the fabrication of silicon spheres is at the forefront, with several routes available in the literature. However, the exploitation of the Mie modes sustained by these silicon resonators is limited over large areas by polydispersity or a lack of long-range order. Here, we present an all-dielectric metamaterial fabricated with a low cost and highly scalable technique: a combination of soft imprinting nanolithography and chemical vapor deposition. The resulting all-dielectric metasurface is composed of an array of silic...
    The design of ultrathin semiconducting materials that achieve broadband absorption is a long-sought-after goal of crucial importance for optoelectronic applications. To date, attempts to tackle this problem consisted either of the use of... more
    The design of ultrathin semiconducting materials that achieve broadband absorption is a long-sought-after goal of crucial importance for optoelectronic applications. To date, attempts to tackle this problem consisted either of the use of strong-but narrowband-or broader-but moderate-light-trapping mechanisms. Here, a strategy that achieves broadband optimal absorption in arbitrarily thin semiconductor materials for all energies above their bandgap is presented. This stems from the strong interplay between Brewster modes, sustained by judiciously nanostructured thin semiconductors on metal films, and photonic crystal modes. Broadband near-unity absorption in Ge ultrathin films is demonstrated, which extends from the visible to the Ge bandgap in the near-infrared and is robust against angle of incidence variation. The strategy follows an easy and scalable fabrication route enabled by soft nanoimprinting lithography, a technique that allows seamless integration in many optoelectronic f...