A study is made of the impact of embedded epitaxial Si:C source/drain regions on the DC and low-f... more A study is made of the impact of embedded epitaxial Si:C source/drain regions on the DC and low-frequency (LF) noise characteristics of nMOSFETs with 1.4 nitrided oxide gate dielectric. It is shown that a ~10% improvement in ION is achieved for a C concentration of 1%, with ...
28th Symposium on Microelectronics Technology and Devices (SBMicro 2013), 2013
ABSTRACT This paper is conceptual and introduces for the first time a new concept of structural d... more ABSTRACT This paper is conceptual and introduces for the first time a new concept of structural design for FinFETs, the OCTO FinFET, which consists of an evolution of the Diamond layout style. Three-dimensional numerical simulations were performed in order to compare the performance between this new architecture and the conventional counterpart. It is shown that this layout style can significantly improve important parameters such as drain current, transconductance and on-state resistance.
This work studies the impact of uniaxial, biaxial and combined uniaxial–biaxial strain on the lin... more This work studies the impact of uniaxial, biaxial and combined uniaxial–biaxial strain on the linearity of nMOSFETs from a 65nm fully depleted (FD) SOI technology. The total harmonic distortion (THD) and third-order harmonic distortion (HD3) will be used as figures of merit. ...
This work shows a comparison between the analog performance of standard and strained Si n-type tr... more This work shows a comparison between the analog performance of standard and strained Si n-type triple-gate FinFETs with high-κ dielectrics and TiN gate material. Different channel lengths and fin widths are studied. It is demonstrated that both standard and strained ...
Triple-gate devices are considered a promising solution for sub-20nm era. Strain engineering has ... more Triple-gate devices are considered a promising solution for sub-20nm era. Strain engineering has also been recognized as an alternative due to the increase in the carriers mobility it propitiates. The simulation of strained devices has the major drawback of the stress non-uniformity, which cannot be easily considered in a device TCAD simulation without the coupled process simulation that is time
Abstruct-In this paper, detailed substrate current characteristics of nMOST's at 4.2... more Abstruct-In this paper, detailed substrate current characteristics of nMOST's at 4.2 K are presented and discussed in view of the well-known transient (hysteresis) and kink behavior observed below carrier freeze-out. A great similarity with room-temperature behavior is found, indicating ...
Silicides used commonly for Schottky barrier infrared (IR) imaging arrays, are those of platinum ... more Silicides used commonly for Schottky barrier infrared (IR) imaging arrays, are those of platinum and palladium. Recently good results have also been reported for IR sensitive composed Pt-Ir silicides. The uniformity of the response over large detector arrays and the VLSI fabrication compatibility are their main advantages, as compared to non Schottky type detectors. This paper presents theoretical as well as experimental data on the cobalt silicide as used in Schottky detectors for the short wavelength IR (SWIR) band. The big advantage of a CoSi2 detector, over the conventionally used silicides, is its higher operating temperature allowing passive cooling in space remote sensing applications.
A study is made of the impact of embedded epitaxial Si:C source/drain regions on the DC and low-f... more A study is made of the impact of embedded epitaxial Si:C source/drain regions on the DC and low-frequency (LF) noise characteristics of nMOSFETs with 1.4 nitrided oxide gate dielectric. It is shown that a ~10% improvement in ION is achieved for a C concentration of 1%, with ...
28th Symposium on Microelectronics Technology and Devices (SBMicro 2013), 2013
ABSTRACT This paper is conceptual and introduces for the first time a new concept of structural d... more ABSTRACT This paper is conceptual and introduces for the first time a new concept of structural design for FinFETs, the OCTO FinFET, which consists of an evolution of the Diamond layout style. Three-dimensional numerical simulations were performed in order to compare the performance between this new architecture and the conventional counterpart. It is shown that this layout style can significantly improve important parameters such as drain current, transconductance and on-state resistance.
This work studies the impact of uniaxial, biaxial and combined uniaxial–biaxial strain on the lin... more This work studies the impact of uniaxial, biaxial and combined uniaxial–biaxial strain on the linearity of nMOSFETs from a 65nm fully depleted (FD) SOI technology. The total harmonic distortion (THD) and third-order harmonic distortion (HD3) will be used as figures of merit. ...
This work shows a comparison between the analog performance of standard and strained Si n-type tr... more This work shows a comparison between the analog performance of standard and strained Si n-type triple-gate FinFETs with high-κ dielectrics and TiN gate material. Different channel lengths and fin widths are studied. It is demonstrated that both standard and strained ...
Triple-gate devices are considered a promising solution for sub-20nm era. Strain engineering has ... more Triple-gate devices are considered a promising solution for sub-20nm era. Strain engineering has also been recognized as an alternative due to the increase in the carriers mobility it propitiates. The simulation of strained devices has the major drawback of the stress non-uniformity, which cannot be easily considered in a device TCAD simulation without the coupled process simulation that is time
Abstruct-In this paper, detailed substrate current characteristics of nMOST's at 4.2... more Abstruct-In this paper, detailed substrate current characteristics of nMOST's at 4.2 K are presented and discussed in view of the well-known transient (hysteresis) and kink behavior observed below carrier freeze-out. A great similarity with room-temperature behavior is found, indicating ...
Silicides used commonly for Schottky barrier infrared (IR) imaging arrays, are those of platinum ... more Silicides used commonly for Schottky barrier infrared (IR) imaging arrays, are those of platinum and palladium. Recently good results have also been reported for IR sensitive composed Pt-Ir silicides. The uniformity of the response over large detector arrays and the VLSI fabrication compatibility are their main advantages, as compared to non Schottky type detectors. This paper presents theoretical as well as experimental data on the cobalt silicide as used in Schottky detectors for the short wavelength IR (SWIR) band. The big advantage of a CoSi2 detector, over the conventionally used silicides, is its higher operating temperature allowing passive cooling in space remote sensing applications.
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Papers by C. Claeys