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In this article, the resistive switching (RS) behaviors in Lu2O3 thin film for advanced flexible nonvolatile memory applications are investigated. Amorphous Lu2O3 thin films with a thickness of 20 nm were deposited at room temperature by... more
In this article, the resistive switching (RS) behaviors in Lu2O3 thin film for advanced flexible nonvolatile memory applications are investigated. Amorphous Lu2O3 thin films with a thickness of 20 nm were deposited at room temperature by radio-frequency magnetron sputtering on flexible polyethylene terephthalate substrate. The structural and morphological changes of the Lu2O3 thin film were characterized by x-ray diffraction, atomic force microscopy, and x-ray photoelectron spectroscopy analyses. The Ru/Lu2O3/ITO flexible memory device shows promising RS behavior with low-voltage operation and small distribution of switching parameters. The dominant switching current conduction mechanism in the Lu2O3 thin film was determined as bulk-controlled space-charge-limited-current with activation energy of traps of 0.33 eV. The oxygen vacancies assisted filament conduction model was described for RS behavior in Lu2O3 thin film. The memory reliability characteristics of switching endurance, d...
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We investigated the impact of Ti doping in the Sm2O3 dielectric on the electrical stress-induced instability in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). With increasing stress time in a-IGZO TFT devices,... more
We investigated the impact of Ti doping in the Sm2O3 dielectric on the electrical stress-induced instability in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). With increasing stress time in a-IGZO TFT devices, a small initial positive shift followed by a negative shift of threshold voltage is characterized in the Sm2O3 dielectric, whereas only positive shift of threshold voltage is observed for Ti-doped Sm2O3 dielectric. The positive shift of the threshold voltage can be explained by charge trapping in the Sm2O3 film and/or the Sm2O3/IGZO interfaces, while the negative shift of threshold voltage is probably due to the extra charges from the IGZO channel by self-heating effect.
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Resistive switching in Ni/Yb2O3/TaN programmable memory cells was investigated. We proposed a rearrangement of oxygen vacancies under electric field plays role in resistive switching. Under negative bias, oxygen vacancies or other... more
Resistive switching in Ni/Yb2O3/TaN
programmable memory cells was investigated. We
proposed a rearrangement of oxygen vacancies under
electric field plays role in resistive switching. Under
negative bias, oxygen vacancies or other metallic defects
migrate through Yb2O3 oxide and SET occurs. A
reproducible resistance switching behavior was observed
with high resistance ratio of about 105 with excellent
data retention, and good immunity to read disturbance,
are also revealed. In particular, the simple sandwich
structure and excellent electrical performance of the
memory cell making them ideal for the basis for highspeed,
high-density, nonvolatile memory applications.
programmable memory cells was investigated. We
proposed a rearrangement of oxygen vacancies under
electric field plays role in resistive switching. Under
negative bias, oxygen vacancies or other metallic defects
migrate through Yb2O3 oxide and SET occurs. A
reproducible resistance switching behavior was observed
with high resistance ratio of about 105 with excellent
data retention, and good immunity to read disturbance,
are also revealed. In particular, the simple sandwich
structure and excellent electrical performance of the
memory cell making them ideal for the basis for highspeed,
high-density, nonvolatile memory applications.