In the present research article, we have proposed an analytical compact model for nanowire Juncti... more In the present research article, we have proposed an analytical compact model for nanowire Junctionless Gate-All-Around (JLNGAA) MOSFET validated in all transistor's operation regimes. The developed model having an analytical compact form of the current expressions, based on surface potential (Φ S), obtained from approximated solutions of Poisson's equation. The proposed model has implemented in standard Verilog-A language using SMASH circuit simulator in order to be used in various commercial circuit simulators. The proposed model has also validated using ATLAS-TCAD simulation for various physical parameters such as the channel doping concentration (N d) and the channel radius (R) of JLNGAA MOSFET. Finally, based on the developed Verilog-A JLNGAA MOSFET model, we have tested it in four types of low voltage circuits, CMOS inverter, CMOS NOR-Gate, an amplifier and a Colpitts oscillator.
2017 International Conference on Electrical and Information Technologies (ICEIT), 2017
PIN diode is in fact a device used in a variety of applications for low frequencies up to high ra... more PIN diode is in fact a device used in a variety of applications for low frequencies up to high radio frequencies, such as photo detector, power rectifier, an RF switch, and applications of high voltage power electronics. Many available models and equations characterize static and transient simulation of PIN diodes. This paper presents a numerical time domain model for nanometric Silicon PIN diode. In this work, all algorithms are implemented using the MATLAB software. The active device model is based on the drift-diffusion model (DDM) which consider carrier's transport and Shockley-Read-Hall (SRH) model. Two-dimensional finite-different (2D-FD) algorithm is proposed to solve the active device model and full implicit backward Euler's scheme has been used to accomplish time domain. The obtained implicit matrix systems are solved by using an efficient and accurate algorithm based on the well-known Gummel's iterations. The obtained solutions provide the time and space distribution of the electrical variables at each time step. Finally, the obtained results are presented and compared with numerical simulations using finite element software (SILVACO-TCAD). Good agreements are observed.
In recent years, NMR/MRI portable devices have drawn attention of numerous researcher teams. They... more In recent years, NMR/MRI portable devices have drawn attention of numerous researcher teams. They are used for variety of applications, from medical diagnosis to archaeological analysis, nondestructive material testing evaluation of water presence in building materials and food emulsions. Different magnets designs have been proposed by many groups of research. They can be divided into two groups: the magnets ex-situ and the magnets in situ . The first group has the simple configuration with the sensitive volume near their surface and the samples under test are located outside the magnets. Thus, they can be used for the experimental investigation of objects with any dimension. Although the ex-situ magnets have simple shape and light weight, they are difficult to achieve in terms of homogeneity of the magnetic field in the sensitive volume. In comparison, the in-situ magnets have their static field reinforced inside their bore center and canceled outside of the structure. Thus, their...
In the present research article, we have proposed an analytical compact model for nanowire Juncti... more In the present research article, we have proposed an analytical compact model for nanowire Junctionless Gate-All-Around (JLNGAA) MOSFET validated in all transistor’s operation regimes. The developed model having an analytical compact form of the current expressions, based on surface potential (ΦS), obtained from approximated solutions of Poisson’s equation. The proposed model has implemented in standard Verilog-A language using SMASH circuit simulator in order to be used in various commercial circuit simulators. The proposed model has also validated using ATLAS-TCAD simulation for various physical parameters such as the channel doping concentration (Nd) and the channel radius (R) of JLNGAA MOSFET. Finally, based on the developed Verilog-A JLNGAA MOSFET model, we have tested it in four types of low voltage circuits, CMOS inverter, CMOS NOR-Gate, an amplifier and a Colpitts oscillator.
2017 International Conference on Electrical and Information Technologies (ICEIT), 2017
The astonishing evolution in microelectronic systems pushes the conventional 2D technology to its... more The astonishing evolution in microelectronic systems pushes the conventional 2D technology to its ultimate limits in terms of both performance and functionality while reducing power and cost criteria. To overcome such challenges, using 3D integration with Through Silicon Vias (TSVs) interconnects, seems to be as a good candidate for the assembly of multilayers into a single stack. Therefore, in this work, we report on the evaluation of the impact of TSV interconnects on the electrical performance of CMOS circuits, particularly the CMOS ring oscillator, by means of SPICE-like simulations. To this purpose, an analytical model is used, which is able to describe the behavior of TSVs and ring oscillator in a circuit level and other phenomena such as the substrate coupling. This study is made in order to optimize the performance of a ring oscillator with the presence of 3D-TSV interconnects as a function of different technological parameters. The analytical approach has proved its effectiveness to perform rapid and reliable simulations to investigate the substrate coupling induced by the TSV on a commonly used CMOS circuits such as the ring oscillator.
International Journal of Circuits, Systems and Signal Processing
In this paper, we propose an analytical drain-current model for long-channel junctionless (JL) cy... more In this paper, we propose an analytical drain-current model for long-channel junctionless (JL) cylindrical surrounding-gate MOSFET (SRG MOSFET). It is based on surface-potential solutions obtained from Poisson’s equation using some approximations and separate conditions. Furthermore, analytical compact expressions of the drain-current have been derived for deep depletion, partial depletion, and accumulation mode. The confrontation of the model with TCAD simulation results, performed with Silvaco Software, proves the validity and the accuracy of the developed model
2012 24th International Conference on Microelectronics (ICM), 2012
ABSTRACT In this work, we present a numerical modeling for a MOS transistor device. This motivate... more ABSTRACT In this work, we present a numerical modeling for a MOS transistor device. This motivated the present comprehensive study of its operations by accurate 2-D numerical simulations. All simulations codes are implemented using MATLAB code simulator. The numerical model is based on a finite-difference approximation of drift-diffusion model (DDM), which contains the Poisson equation and the carrier transport equations. The proposed algorithm provides the time and space distribution of the unknown functions electrostatic potential, carriers' concentration, current density for the MOS transistor. Finally, the obtained results are presented and show a good agreement with numerical simulations using finite element software (ISE-TCAD software).
ABSTRACT A detailed three-dimensional (3-D) full-wave time-domain simulation model is presented f... more ABSTRACT A detailed three-dimensional (3-D) full-wave time-domain simulation model is presented for the analysis of an active semiconductor device. Microwave analysis of the nMOS transistor using monolithic microwave integrated circuit (MMIC) is simulated. A three-dimensional finite-difference time-domain (3D-FDTD) scheme is adopted to describe the circuit passive part, whereas numerical device simulation techniques are employed for the active semiconductor devices. The proposed algorithm provides the time and space distribution of the unknown functions electrostatic potential, carriers' concentration, and current density for the MOS transistor. Fast Fourier transform (FFT) analysis is performed on the obtained time response to calculate the scattering matrix of the S-parameters and phase frequency dependencies. Finally, the obtained results are presented and show a good agreement with those based on a hydrodynamic model.
In the present research article, we have proposed an analytical compact model for nanowire Juncti... more In the present research article, we have proposed an analytical compact model for nanowire Junctionless Gate-All-Around (JLNGAA) MOSFET validated in all transistor's operation regimes. The developed model having an analytical compact form of the current expressions, based on surface potential (Φ S), obtained from approximated solutions of Poisson's equation. The proposed model has implemented in standard Verilog-A language using SMASH circuit simulator in order to be used in various commercial circuit simulators. The proposed model has also validated using ATLAS-TCAD simulation for various physical parameters such as the channel doping concentration (N d) and the channel radius (R) of JLNGAA MOSFET. Finally, based on the developed Verilog-A JLNGAA MOSFET model, we have tested it in four types of low voltage circuits, CMOS inverter, CMOS NOR-Gate, an amplifier and a Colpitts oscillator.
2017 International Conference on Electrical and Information Technologies (ICEIT), 2017
PIN diode is in fact a device used in a variety of applications for low frequencies up to high ra... more PIN diode is in fact a device used in a variety of applications for low frequencies up to high radio frequencies, such as photo detector, power rectifier, an RF switch, and applications of high voltage power electronics. Many available models and equations characterize static and transient simulation of PIN diodes. This paper presents a numerical time domain model for nanometric Silicon PIN diode. In this work, all algorithms are implemented using the MATLAB software. The active device model is based on the drift-diffusion model (DDM) which consider carrier's transport and Shockley-Read-Hall (SRH) model. Two-dimensional finite-different (2D-FD) algorithm is proposed to solve the active device model and full implicit backward Euler's scheme has been used to accomplish time domain. The obtained implicit matrix systems are solved by using an efficient and accurate algorithm based on the well-known Gummel's iterations. The obtained solutions provide the time and space distribution of the electrical variables at each time step. Finally, the obtained results are presented and compared with numerical simulations using finite element software (SILVACO-TCAD). Good agreements are observed.
In recent years, NMR/MRI portable devices have drawn attention of numerous researcher teams. They... more In recent years, NMR/MRI portable devices have drawn attention of numerous researcher teams. They are used for variety of applications, from medical diagnosis to archaeological analysis, nondestructive material testing evaluation of water presence in building materials and food emulsions. Different magnets designs have been proposed by many groups of research. They can be divided into two groups: the magnets ex-situ and the magnets in situ . The first group has the simple configuration with the sensitive volume near their surface and the samples under test are located outside the magnets. Thus, they can be used for the experimental investigation of objects with any dimension. Although the ex-situ magnets have simple shape and light weight, they are difficult to achieve in terms of homogeneity of the magnetic field in the sensitive volume. In comparison, the in-situ magnets have their static field reinforced inside their bore center and canceled outside of the structure. Thus, their...
In the present research article, we have proposed an analytical compact model for nanowire Juncti... more In the present research article, we have proposed an analytical compact model for nanowire Junctionless Gate-All-Around (JLNGAA) MOSFET validated in all transistor’s operation regimes. The developed model having an analytical compact form of the current expressions, based on surface potential (ΦS), obtained from approximated solutions of Poisson’s equation. The proposed model has implemented in standard Verilog-A language using SMASH circuit simulator in order to be used in various commercial circuit simulators. The proposed model has also validated using ATLAS-TCAD simulation for various physical parameters such as the channel doping concentration (Nd) and the channel radius (R) of JLNGAA MOSFET. Finally, based on the developed Verilog-A JLNGAA MOSFET model, we have tested it in four types of low voltage circuits, CMOS inverter, CMOS NOR-Gate, an amplifier and a Colpitts oscillator.
2017 International Conference on Electrical and Information Technologies (ICEIT), 2017
The astonishing evolution in microelectronic systems pushes the conventional 2D technology to its... more The astonishing evolution in microelectronic systems pushes the conventional 2D technology to its ultimate limits in terms of both performance and functionality while reducing power and cost criteria. To overcome such challenges, using 3D integration with Through Silicon Vias (TSVs) interconnects, seems to be as a good candidate for the assembly of multilayers into a single stack. Therefore, in this work, we report on the evaluation of the impact of TSV interconnects on the electrical performance of CMOS circuits, particularly the CMOS ring oscillator, by means of SPICE-like simulations. To this purpose, an analytical model is used, which is able to describe the behavior of TSVs and ring oscillator in a circuit level and other phenomena such as the substrate coupling. This study is made in order to optimize the performance of a ring oscillator with the presence of 3D-TSV interconnects as a function of different technological parameters. The analytical approach has proved its effectiveness to perform rapid and reliable simulations to investigate the substrate coupling induced by the TSV on a commonly used CMOS circuits such as the ring oscillator.
International Journal of Circuits, Systems and Signal Processing
In this paper, we propose an analytical drain-current model for long-channel junctionless (JL) cy... more In this paper, we propose an analytical drain-current model for long-channel junctionless (JL) cylindrical surrounding-gate MOSFET (SRG MOSFET). It is based on surface-potential solutions obtained from Poisson’s equation using some approximations and separate conditions. Furthermore, analytical compact expressions of the drain-current have been derived for deep depletion, partial depletion, and accumulation mode. The confrontation of the model with TCAD simulation results, performed with Silvaco Software, proves the validity and the accuracy of the developed model
2012 24th International Conference on Microelectronics (ICM), 2012
ABSTRACT In this work, we present a numerical modeling for a MOS transistor device. This motivate... more ABSTRACT In this work, we present a numerical modeling for a MOS transistor device. This motivated the present comprehensive study of its operations by accurate 2-D numerical simulations. All simulations codes are implemented using MATLAB code simulator. The numerical model is based on a finite-difference approximation of drift-diffusion model (DDM), which contains the Poisson equation and the carrier transport equations. The proposed algorithm provides the time and space distribution of the unknown functions electrostatic potential, carriers' concentration, current density for the MOS transistor. Finally, the obtained results are presented and show a good agreement with numerical simulations using finite element software (ISE-TCAD software).
ABSTRACT A detailed three-dimensional (3-D) full-wave time-domain simulation model is presented f... more ABSTRACT A detailed three-dimensional (3-D) full-wave time-domain simulation model is presented for the analysis of an active semiconductor device. Microwave analysis of the nMOS transistor using monolithic microwave integrated circuit (MMIC) is simulated. A three-dimensional finite-difference time-domain (3D-FDTD) scheme is adopted to describe the circuit passive part, whereas numerical device simulation techniques are employed for the active semiconductor devices. The proposed algorithm provides the time and space distribution of the unknown functions electrostatic potential, carriers' concentration, and current density for the MOS transistor. Fast Fourier transform (FFT) analysis is performed on the obtained time response to calculate the scattering matrix of the S-parameters and phase frequency dependencies. Finally, the obtained results are presented and show a good agreement with those based on a hydrodynamic model.
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