CMOS-MEMS

Silicon-on-Insulator (SOI) technology, with unique properties such as harsh environment resistance and lower power consumption [1], is presented here as a platform for CMOS and MEMS co-integration. An original CMOS-compatible process has been developed for the design and the co-fabrication of out-of-plane (3D) movable cantilevers and ring oscillators (RO) circuits on the same chip. The measured transducer, by deflection of the out-of-plane MEMS component, shows until 10% variation of the frequency under different flow rates.

ABSTRACT Low-power and high-temperature sensors and MEMS designs based on bulk, SOI and IC compatible materials and processes are presented here. Target markets are in general public sensors for UV, ozone, CO, liquids presence, eg in mobile devices. Or in health, sensors for the medical diagnosis (DNA, RNA, bacteria, viruses). Simple, low cost and low consumption devices are required in medical applications. In our laboratory aluminum oxide interdigitated capacitors have been developed and successfully tested on ...