Foil

Do fencers require a weapon-specific approach to strength and conditioning training? J Strength Cond Res 31(6): 1662–1668, 2017—There are 3 types of weapons used in Olympic fencing: the e ´ pé e, foil, and sabre. The aim of this study was to determine if fencers exhibited different physical characteristics across weapons. Seventy-nine male (n = 46) and female (n = 33) national standard fencers took part in this study. Fencers from each weapon (male and female), i.e., e ´ pé e (n = 19 and 10), foil (n = 22 and 14), and sabre (n = 13 and 10), were (mean 6 SD) 15.9 6 0.7 years of age, 178.5 6 7.9 cm tall, 67.4 6 12.2 kg in mass and had 6.3 6 2.3 years fencing experience; all were in regular training (;4 times per week). Results revealed that across all performance tests (lower-body power, reactive strength index, change of direction speed, and repeat lunge ability), there was no significant main effect for weapon in male fencers (p = 0.63) or female fencers (p = 0.232), but a significant main affect for gender (p , 0.001). Pairwise comparisons revealed that male fencers scored better during the countermovement jump, change of direction speed, and repeat lunge ability test (p , 0.001). The former findings may be because of similarities in bout intensity and time, movement types (lunging and changing direction), and the need to execute competition actions as explosively as possible. Based on the findings of the present study, it could be indicated that e ´ pé e, foil, and sabre fencers do not require a weapon-specific approach to strength and conditioning training. Each fencer should target the area they are weakest at, rather than an area that they feel best represents the unique demands of their weapon.

Strained silicon on insulators (sSOI) wafers with a supercritical thickness of 58 nm were produced using thin strain relaxed SiGe buffer layers, wafer bonding, selective etch back and epitaxial overgrowth. Raman spectroscopy revealed an homogeneous strain of 0.63 plusmn 0.03 % in the strained Si layer. Long channel n-type SOI-MOSFETs showed very large electron mobilities up to 1200 cm2/Vs in the strained Si devices. These values are more than two times larger than those of reference SOI n-MOSFETs. Mobility simulations with state of the art scattering models are then used to interpret the experiments.

This task go in order to developing a new way of enameled and polyester foil insulation of conductors used in building transformers thermal of class temperature about (150 C 0), the production technology for two types of enameled and polyester foil-insulation conduction are presented. As will as the physical, mechanical and electrical characteristics of conductors in a normal climate N 2 , in a tropical climate T 2 and after 28 cycle at (200 C 0) are presented.

Titania-poly(vinylpyrrolidone) (PVP) core-shell nano/microfibers are electrospun on substrates of differing hydrophilicity and conductivity in order to investigate the connection between these substrate properties and the apparent water contact angles against the fiber mats. The focus of this study compares current data from silicon- and aluminum foil-supported mats to extant data from ITO and glass-supported fibers to detail the complexities of apparent contact angle dependence on mat structure related to substrate properties. Electrospinning time and collection distance were controlled parameters for producing thicker and denser mats. In all cases, contact angles increased with collection time for a given substrate series. A morphological wettability study of the fiber mat surface was conducted by applying Rhodamine B dye solution droplets. Using fluorescence microscopy, the stained fibers indicate the extent of true wetting contact and the lack of penetration into the fiber layers. Image comparisons with bright-field illumination confirms that even some fibers of the top layers are not wetted.

The effects of Ginkgo biloba leaf extract on rat brain or livermonoamine oxidase (MAO)-A and -B activity, biogenic amine concentration in nervous tissue, N-methyl-d-aspartate (NMDA)- and N-(2-chloroethyl)-N-ethyl-2-bromobenzylamine (DSP-4)-induced neurotoxicity and antioxidant activity was investigated to determine the effects of the extract on monoamine catabolism and neuroprotection. Ginkgo biloba leaf extract was shown to produce in-vitro inhibition of rat brain MAO-A and -B. The Ginkgo biloba extract was chromatographed on a reverse-phase HPLC system and two of the components isolated were shown to be MAO inhibitors (MAOIs). These MAOIs were identified by high-resolution mass spectrometry as kaempferol and isorhamnetin. Pure kaempferol and a number of related flavonoids were examined as MAOIs in-vitro. Kaempferol, apigenin and chrysin proved to be potent MAOIs, but produced more pronounced inhibition of MAO-A than MAO-B. IC50 (50% inhibition concentration) values for the ability...

The aim of the present study was to investigate the structural modifications and physico-mechanical properties of the BC sheets produced in static cultures using a newly developed fed-batch strategy and a new medium (waste from beer fermentation broth; WBFB). Characteristics of these BC samples were compared with BC sheets produced in batch and fed-batch cultivations using chemically defined medium (CDM).

Surface tension forces induced by a liquid droplet are used to bend thin elastic sheets into three dimensional structures. The resulting 3D shape may be controlled by tailoring the initial cut of the sheet. We derive the criterion for folding from a balance between elastic and capillary effects and compare it with the experiments. This mechanism can be used for fabrication of three-dimensional micro- or nano-scale objects through the self-folding of planar templates.

Strained silicon on insulators (sSOI) wafers with a supercritical thickness of 58 nm were produced using thin strain relaxed SiGe buffer layers, wafer bonding, selective etch back and epitaxial overgrowth. Raman spectroscopy revealed an homogeneous strain of 0.63 plusmn 0.03 % in the strained Si layer. Long channel n-type SOI-MOSFETs showed very large electron mobilities up to 1200 cm2/Vs in the strained Si devices. These values are more than two times larger than those of reference SOI n-MOSFETs. Mobility simulations with state of the art scattering models are then used to interpret the experiments.

[Journal of Performance of Constructed Facilities 25, 189 (2011)]. Kian Karimi, Wael W. El-Dakhakhni, Michael J. Tait. Abstract. ... because confinement was passive rather than active (Andrawes et al. 2010; Krstulovic-Opara and Thiedeman 2000). ...