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Md Hasibul Alam
Md Hasibul Alam
Intel Corporation
Verified email at utexas.edu
Title
Cited by
Cited by
Year
Silicene, silicene derivatives, and their device applications
A Molle, C Grazianetti, L Tao, D Taneja, MH Alam, D Akinwande
Chemical Society Reviews 47 (16), 6370-6387, 2018
3082018
Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers
MH Alam, Z Xu, S Chowdhury, Z Jiang, D Taneja, SK Banerjee, K Lai, ...
Nature communications 11 (1), 3203, 2020
402020
Disassembling silicene from native substrate and transferring onto an arbitrary target substrate
C Martella, G Faraone, MH Alam, D Taneja, L Tao, G Scavia, E Bonera, ...
Advanced Functional Materials 30 (42), 2004546, 2020
312020
Two-Step Growth of Uniform Monolayer MoS2 Nanosheets by Metal–Organic Chemical Vapor Deposition
S Chowdhury, A Roy, C Liu, MH Alam, R Ghosh, H Chou, D Akinwande, ...
ACS omega 6 (15), 10343-10351, 2021
222021
Wafer-scalable single-layer amorphous molybdenum trioxide
MH Alam, S Chowdhury, A Roy, X Wu, R Ge, MA Rodder, J Chen, Y Lu, ...
ACS nano 16 (3), 3756-3767, 2022
192022
Direct growth of on electrolytic substrate and realization of high-mobility transistors
MH Alam, S Chowdhury, A Roy, MH Braga, SK Banerjee, D Akinwande
Physical Review Materials 5 (5), 054003, 2021
162021
Physics-based bias-dependent compact modeling of 1/f noise in single-to few-layer 2D-FETs
N Mavredakis, A Pacheco-Sanchez, MH Alam, A Guimerà-Brunet, ...
Nanoscale 15 (14), 6853-6863, 2023
32023
Role of Hydrogen in Suppressing Secondary Nucleation in Chemical Vapor-Deposited MoS2
S Chowdhury, A Roy, MH Alam, T Pramanik, J Depoy, R Chrostowski, ...
ACS Applied Electronic Materials 4 (12), 6133-6141, 2022
32022
InxGa1−xSb MOSFET: Performance analysis by self consistent CV characterization and direct tunneling gate leakage current
MH Alam, IA Niaz, I Ahmed, Z Al Azim, N Chowdhury, QDM Khosru
2012 IEEE International Conference on Electro/Information Technology, 1-6, 2012
32012
Solid Electrolytic Substrates for High Performance Transistors and Circuits
MH Alam, Z Xu, S Chowdhury, Z Jiang, D Taneja, SK Banerjee, K Lai, ...
78th Device Research Conference, 2020
22020
Effect of biaxial strain on structural and electronic properties of graphene/boron nitride hetero bi-layer structure
MH Alam, KI Masood, QDM Khosru
8th International Conference on Electrical and Computer Engineering, 381-384, 2014
22014
Knowledge, Attitude and Exposure to Secondhand Smoking Among Women in Rural Setting
AM Chowdhury, FA Lima, MH Alam, NM Chowdhury, S Pervin, ...
Central Medical College Journal 7 (1), 26-31, 2023
12023
Integration paths for Xenes
G Faraone, MH Alam, X Xu, Z Dang, L Tao, D Akinwande, D Taneja
Xenes, 405-438, 2022
12022
Performance Analysis of InAs/AlSb MOS-HEMT by Self-Consistent Capacitance-Voltage Characterization and Direct Tunneling Gate Leakage Current
I Ahmed, S Chowdhury, MH Alam, IA Niaz, QDM Khosru
ECS Transactions 72 (2), 189, 2016
12016
Electric Field Tunable Band Gap in Bi-Axially Strained Graphene/Hexagonal Boron Nitride Super-Lattice
KI Masood, MH Alam, QDM Khosru
227th ECS Meeting (May 24-28, 2015), 2015
12015
Low-Temperature Synthesis of WSe2 by the Selenization Process under Ultrahigh Vacuum for BEOL Compatible Reconfigurable Neurons
SST Nibhanupudi, A Roy, S Chowdhury, R Schalip, MJ Coupin, ...
ACS Applied Materials & Interfaces 16 (17), 22326-22333, 2024
2024
Highly Coherent Supercontinuum Generation in a Silicon Nanowire with Sub-Wavelength Air-Hole
A Hasan, MH Alam, MS Alam
2023 IEEE International Conference on Telecommunications and Photonics (ICTP …, 2023
2023
Solid electrolyte substrates for two-dimensional transition metal dichalcogenide growth, transistors and circuits
MH Alam
2021
Centimeter-Scale MoS2 on Solid Electrolyte Substrate by Sulfurization of Molybdenum Thin Film
MH Alam, SST Nibhanupudi, SK Banerjee, D Akinwande
2021 IEEE 21st International Conference on Nanotechnology (NANO), 421-424, 2021
2021
Author Correction: Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers
MH Alam, Z Xu, S Chowdhury, Z Jiang, D Taneja, SK Banerjee, K Lai, ...
Nature Communications 12, 2021
2021
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