Location via proxy:   [ UP ]  
[Report a bug]   [Manage cookies]                
 
 
Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
Journals
Micromachines
Special Issues
Research Progress of Advanced SiC Semiconductors
share announcement

Research Progress of Advanced SiC Semiconductors

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".

Deadline for manuscript submissions: 31 December 2024 | Viewed by 1324

Special Issue Editor

Prof. Dr. Xingfang Liu

E-Mail Website
Guest Editor
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Interests: silicon carbide; epitaxy; chemical vapor deposition; power device
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Silicon carbide (SiC) semiconductor technology is becoming increasingly integral to developments in power electronics, automotive industries, aerospace, and many other critical sectors. Therefore, we are thrilled to announce the call for papers for this Special Issue titled "Research Progress of Advanced SiC Semiconductors". This Special Issue aims to explore and showcase the latest research findings and technological advancements in this field. We cordially invite scholars and professionals from around the globe who are engaged in SiC semiconductor research to submit their original research findings and review articles.

The scope of this call includes, but is not limited to, the growth techniques and characterization of SiC materials; the design, fabrication, and application of SiC semiconductor devices; the integration and optimization of SiC power electronic devices and systems; and thermal management solutions for high-performance SiC semiconductors. This initiative is a fantastic opportunity for researchers and industry practitioners to contribute to a rapidly advancing field, sharing innovations that push the boundaries of what is possible with SiC semiconductors. Contributions that highlight groundbreaking work and forward-thinking insights into the future of SiC technologies are especially welcome.

Prof. Dr. Xingfang Liu
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • 3C-SiC
  • 4H-SiC
  • bulk growth
  • epitaxial growth
  • oxidation
  • film characteristics
  • FET device
  • power device

Published Papers (2 papers)

Download All Papers
Order results
Result details
Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:

Research

9 pages, 3672 KiB  
Article
Positive Bias Temperature Instability in SiC-Based Power MOSFETs
by Vladislav Volosov, Santina Bevilacqua, Laura Anoldo, Giuseppe Tosto, Enzo Fontana, Alfio-lip Russo, Claudio Fiegna, Enrico Sangiorgi and Andrea Natale Tallarico
Micromachines 2024, 15(7), 872; https://doi.org/10.3390/mi15070872 - 30 Jun 2024
Viewed by 497
Abstract
This paper investigates the threshold voltage shift (ΔVTH) induced by positive bias temperature instability (PBTI) in silicon carbide (SiC) power MOSFETs. By analyzing ΔVTH under various gate stress voltages (VGstress) at 150 °C, distinct mechanisms are revealed: (i) [...] Read more.
This paper investigates the threshold voltage shift (ΔVTH) induced by positive bias temperature instability (PBTI) in silicon carbide (SiC) power MOSFETs. By analyzing ΔVTH under various gate stress voltages (VGstress) at 150 °C, distinct mechanisms are revealed: (i) trapping in the interface and/or border pre-existing defects and (ii) the creation of oxide defects and/or trapping in spatially deeper oxide states with an activation energy of ~80 meV. Notably, the adoption of different characterization methods highlights the distinct roles of these mechanisms. Moreover, the study demonstrates consistent behavior in permanent ΔVTH degradation across VGstress levels using a power law model. Overall, these findings deepen the understanding of PBTI in SiC MOSFETs, providing insights for reliability optimization. Full article
(This article belongs to the Special Issue Research Progress of Advanced SiC Semiconductors)
►▼ Show Figures

Figure 1

10 pages, 2757 KiB  
Article
Influence of Growth Process on Suppression of Surface Morphological Defects in 4H-SiC Homoepitaxial Layers
by Yicheng Pei, Weilong Yuan, Yunkai Li, Ning Guo, Xiuhai Zhang and Xingfang Liu
Micromachines 2024, 15(6), 665; https://doi.org/10.3390/mi15060665 - 21 May 2024
Viewed by 636
Abstract
To address surface morphological defects that have a destructive effect on the epitaxial wafer from the aspect of 4H-SiC epitaxial growth, this study thoroughly examined many key factors that affect the density of defects in 4H-SiC epitaxial wafer, including the ratio of carbon [...] Read more.
To address surface morphological defects that have a destructive effect on the epitaxial wafer from the aspect of 4H-SiC epitaxial growth, this study thoroughly examined many key factors that affect the density of defects in 4H-SiC epitaxial wafer, including the ratio of carbon to silicon, growth time, application of a buffer layer, hydrogen etching and other process parameters. Through systematic experimental verification and data analysis, it was verified that when the carbon–silicon ratio was accurately controlled at 0.72, the density of defects in the epitaxial wafer was the lowest, and its surface flatness showed the best state. In addition, it was found that the growth of the buffer layer under specific conditions could effectively reduce defects, especially surface morphology defects. This provides a new idea and method for improving the surface quality of epitaxial wafers. At the same time, we also studied the influence of hydrogen etching on the quality of epitaxial wafers. The experimental results show that proper hydrogen etching can optimize surface quality, but excessive etching may lead to the exposure of substrate defects. Therefore, it is necessary to carefully control the conditions of hydrogen etching in practical applications to avoid adverse effects. These findings have important guiding significance for optimizing the quality of epitaxial wafers. Full article
(This article belongs to the Special Issue Research Progress of Advanced SiC Semiconductors)
►▼ Show Figures

Figure 1

Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
 
Displaying articles 1-2
Back to TopTop