Hall effect measurements are important in determining the electronic properties of emerging semiconductor materials, but care must be taken in their use and analysis.
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Data that support the findings of this study are available from the corresponding authors upon reasonable request.
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Acknowledgements
V.B. and V.P. acknowledge partial support of their research at Rutgers University via the Donald H. Jacobs Chair in Applied Physics.
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Nature Electronics thanks Randolph Elmquist and the other, anonymous, reviewer(s) for their contribution to the peer review of this work.
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Supplementary discussion, Table 1 and Hall checklist form.
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Bruevich, V., Podzorov, V. Reporting Hall effect measurements of charge carrier mobility in emerging materials. Nat Electron 7, 510â512 (2024). https://doi.org/10.1038/s41928-024-01198-w
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DOI: https://doi.org/10.1038/s41928-024-01198-w
