electron capture
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AbstractBeyond the general purpose of noble gas ion sputtering, which is to achieve functional defect engineering of two-dimensional (2D) materials, we herein report another positive effect of low-energy (100 eV) He+ ion irradiation: converting n-type MoS2 to p-type by electron capture through the migration of the topmost S atoms. The electron capture ability via He+ ion irradiation is valid for supported bilayer MoS2; however, it is limited at supported monolayer MoS2 because the charges on the underlying substrates transfer into the monolayer under the current condition for He+ ion irradiation. Our technique provides a stable and universal method for converting n-type 2D transition metal dichalcogenides (TMDs) into p-type semiconductors in a controlled fashion using low-energy He+ ion irradiation.

The single- and double-electron capture (SEC, DEC) processes of He2+ ions colliding with Ne atoms are studied by utilizing the full quantum-mechanical molecular-orbital close-coupling method. Total and state-selective SEC and DEC cross sections are presented in the energy region of 2 eV/u to 20 keV/u. Results show that the dominant reaction channel is Ne+(2s2p 6 2 S) + He+(1s) in the considered energy region due to strong couplings with the initial state Ne(2s 22p 6 1 S) + He2+ around the internuclear distance of 4.6 a.u. In our calculations, the SEC cross sections decrease initially and then increase whereby, the minimum point is around 0.38 keV/u with the increase of collision energies. After considering the effects of the electron translation factor (ETF), the SEC cross sections are increased by 15%–25% nearby the energy region of keV/u and agree better with the available results. The DEC cross sections are smaller than those of SEC because of the larger energy gaps and no strong couplings with the initial state. Due to the Demkov-type couplings between DEC channel Ne2+(2s22p 4 1 S) + He(1s 2) and the dominating SEC channel Ne+(2s2p 6 2 S) + He+(1s), the DEC cross sections increase with increasing impact energies. Good consistency can also be found between the present DEC and the experimental measurements in the overlapping energy region.

Abstract Using the theory of relativistic mean-field effective interactions, the influences of superstrong magnetic fields (SMFs) on electron Fermi energy, binding energy per nucleus and single-particle level structure are discussed in super-Chandrasekhar magnetic white dwarfs. Based on the relativistical SMFs theory model of Potekhin et al., the electron chemical potential is corrected in SMFs, and the electron capture (EC) of iron group nuclei is investigated by using the Shell-Model Monte Carlo method and Random Phase Approximation theory. The EC rates can increase by more than three orders of magnitude due to the increase of the electron Fermi energy and the change of single-particle level structure by SMFs. However, the EC rates can decrease by more than four orders of magnitude due to increase of the nuclei binding energy by SMFs. We compare our results with those of FFNs (Fuller et al.), AUFDs (Aufderheide et al.) and Nabi (Nabi et al.). Our rates are higher by about four orders of magnitude than those of FFN, AUFD and Nabi due to SMFs. Our study may have important reference value for subsequent studies of the instability, mass radius relationship, and thermal and magnetic evolution of super-Chandrasekhar magnetic white dwarfs.