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Abstract Silicon Carbide (SiC) power MOSFET is the next generation device in the supply system of spacecraft. However, the current degradation or catastrophic failure of the power device could be induced when a drain voltage exceeds critical condition. In this article, an improved VDMOSFET structure for the Single-Event Burnout (SEB) is demonstrated. The improved power VDMOSFET includes a P+ shielding region at the JFET region. Meanwhile, forming a CSL layer by ion-implantation at the JFET to reduce the specific on-resistance. The device is etched in both sides to form trench and then implanting N-type impurities at the side walls of the trench to form the N+ split source (SDS-VDMOSFET). The 2-D numerical simulator Silvaco Atlas was used to study the SEB performance for the 1.2 kV-rated SiC SDS-VDMOSFET in a high linear energy transfer (LET) value of 0.5 pC/μm. The simulation results show that the improved structure can effectively reduce the peak lattice temperature induced by heavy-ion and increase the SEB threshold voltage compared with the standard VDMOSFET. Furthermore, the improved structure also presents a lower specific on-resistance. As a result, the maximum temperature of the standard VDMOSFET has exceeded 3000 K at a drain voltage of 400 V. However, the maximum temperature of the improved VDMOSFET is only 2090 K at a drain voltage of 800 V.

The drama Ostatni koncert (The Last Concert) (1960) by Stanisława Fleszarowa-Muskat, originally written as a radio play, sits on the border between popular and fictional literature. The text was intended for a wide audience. The plot focuses on a single event – Frédéric Chopin’s last concert in Warsaw, just before his departure to France, which took place on October 11, 1830. Youth, as it was understood by the romantics, turns out to be a time that shaped Chopin’s artistic personality. In this drama, the independence background is important as it highlights Chopin’s ties to the fate of his homeland, which gives his music a patriotic and revolutionary dimension. In sounds, Chopin’s brilliant music expresses the essence of the Polish soul: its nobility and love of freedom. Chopin’s concert took place at a turning point both for the composer and for the nation whose spirit he expressed through sounds. The drama about Chopin, the national genius, is at the same time a drama about a national community that acquires its identity by identifying with his music.

The continuous scaling of electronic components has led to the development of high-performance microprocessors which are even suitable for safety-critical applications where radiation-induced errors, such as single event effects (SEEs), are one of the most important reliability issues. This work focuses on the development of a fault injection environment capable of analyzing the impact of errors on the functionality of an ARM Cortex-A9 microprocessor embedded within a Zynq-7000 AP-SoC, considering different fault models affecting both the system memory and register resources of the embedded processor. We developed a novel Python-based fault injection platform for the emulation of radiation-induced faults within the AP-SoC hardware resources during the execution of software applications. The fault injection approach is not intrusive, and it does not require modifying the software application under evaluation. The experimental analyses have been performed on a subset of the MiBench benchmark software suite. Fault injection results demonstrate the capability of the developed method and the possibility of evaluating various sets of fault models.

This paper analyzes the single event transient (SET) response of low noise amplifier (LNA) designed using SiGe heterojunction bipolar transistors (HBT). To verify the radiation tolerance of the proposed LNA, a total of four cascode configurations were designed. Comprehensive mixed-mode simulations were performed to evaluate the SET susceptibility of considered LNA cascode configurations, and we have analyzed how the strike parameters affect their output response. In this fact the strike position, linear energy transfer (LET), and track radius, were varied, and the resulting transients were compared for the different LNA configurations. Through this study, the potential capability of the inverse mode SiGe heterojunction bipolar transistor (HBT) in LNA radiation tolerance was confirmed for various strike operating conditions. It has been demonstrated that the single event sensitivity was reduced for LNA employing inverse mode SiGe HBT for strike device. The strike influence on the different LNA configurations response depends on strike LET, where a reduced SET variation is observed for high LET.