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IEEE Transactions on Electron Devices
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Published By Institute Of Electrical And Electronics Engineers

1557-9646, 0018-9383
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Static Performance and Threshold Voltage Stability Improvement of Al₂O₃/LaAlO₃/SiO₂ Gate-Stack for SiC Power MOSFETs

2022 ◽  
pp. 1-6
Author(s):  
Linhua Huang ◽  
Yong Liu ◽  
Xin Peng ◽  
Yuichi Onozawa ◽  
Takashi Tsuji ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Voltage Stability ◽  
Gate Stack ◽  
Power Mosfets ◽  
Static Performance

Barrier Lowering-Induced Capacitance Increase of Short-Channel Power p-GaN HEMTs at High Temperature

2022 ◽  
pp. 1-5
Author(s):  
Yajie Xin ◽  
Wanjun Chen ◽  
Ruize Sun ◽  
Xiaochuan Deng ◽  
Zhaoji Li ◽  
...  
Keyword(s):  
High Temperature ◽  
Short Channel ◽  
Channel Power ◽  
Gan Hemts

Single Event Burnout Hardening Technique for High-Voltage p-i-n Diodes With Field Limiting Rings Termination Structure

2022 ◽  
pp. 1-7
Author(s):  
Xinfang Liao ◽  
Yi Liu ◽  
Changqing Xu ◽  
Jing Li ◽  
Yintang Yang
Keyword(s):  
High Voltage ◽  
Single Event

Tradeoffs With RGB-IR Image Sensors

2022 ◽  
pp. 1-9
Author(s):  
Orit Skorka ◽  
Radu Ispasoiu
Keyword(s):  
Image Sensors

Extending Channel Scaling Limit of p-MOSFETs Through Antimonene With Heavy Effective Mass and High Density of State

2022 ◽  
pp. 1-6
Author(s):  
Shengli Zhang ◽  
Hengze Qu ◽  
Jiang Cao ◽  
Yangyang Wang ◽  
Shengyuan A. Yang ◽  
...  
Keyword(s):  
Effective Mass ◽  
Scaling Limit ◽  
High Density ◽  
Density Of State
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