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    Silicon Diffused Power Transistor: General Description

    Uploaded by

    Hanif Rathore Prince
    This document provides specifications for a high voltage, high speed switching transistor primarily used in horizontal deflection circuits for color televisions. It lists technical parameters such as maximum voltage and current ratings, power dissipation, temperature ranges, and switching times. Key specifications include a collector-emitter voltage rating up to 1500V, collector current up to 5A, total power dissipation from 25-50W, and switching times below 1 microsecond.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Silicon Diffused Power Transistor: General Description

    Uploaded by

    Hanif Rathore Prince
    34 views1 page
    This document provides specifications for a high voltage, high speed switching transistor primarily used in horizontal deflection circuits for color televisions. It lists technical parameters such as maximum voltage and current ratings, power dissipation, temperature ranges, and switching times. Key specifications include a collector-emitter voltage rating up to 1500V, collector current up to 5A, total power dissipation from 25-50W, and switching times below 1 microsecond.

    Original Description:

    2SD2499

    Original Title

    2SAD2499

    Copyright

    © © All Rights Reserved

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    PDF, TXT or read online from Scribd

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    This document provides specifications for a high voltage, high speed switching transistor primarily used in horizontal deflection circuits for color televisions. It lists technical parameters such as maximum voltage and current ratings, power dissipation, temperature ranges, and switching times. Key specifications include a collector-emitter voltage rating up to 1500V, collector current up to 5A, total power dissipation from 25-50W, and switching times below 1 microsecond.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    34 views1 page

    Silicon Diffused Power Transistor: General Description

    Uploaded by

    Hanif Rathore Prince
    This document provides specifications for a high voltage, high speed switching transistor primarily used in horizontal deflection circuits for color televisions. It lists technical parameters such as maximum voltage and current ratings, power dissipation, temperature ranges, and switching times. Key specifications include a collector-emitter voltage rating up to 1500V, collector current up to 5A, total power dissipation from 25-50W, and switching times below 1 microsecond.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 1

    GENERAL DESCRIPTION

    Highvoltage,high-speed switching npn transistors in a


    plastic envelope with integrated efficiency diode,prim-
    arily for use in horizontal deflection circuites of colour
    television receivers
    QUICK REFERENCE DATA
    LIMITING VALUES
    SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
    V
    CESM
    Collector-emitter voltage peak value V
    BE
    = 0V - 1500 V
    V
    CEO
    Collector-emitter voltage (open base) - 600 V
    I
    C
    Collector current (DC) - 5 A
    I
    CM
    Collector current peak value - 10 A
    P
    tot
    Total power dissipation T
    mb
    25 - 50 W
    V
    CEsat
    Collector-emitter saturation voltage I
    C
    = 4.0A; I
    B
    = 0.8A - 5 V
    I
    csat
    Collector saturation current f = 16KHz - A
    V
    F
    Diode forward voltage I
    F
    = 4.0A 1.5 2.0 V
    t
    f
    Fall time I
    Csat
    = 4.0A; f = 16KHz 1.0 s
    SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
    V
    CESM
    Collector-emitter voltage peak value V
    BE
    = 0V - 1500 V
    V
    CEO
    Collector-emitter voltage (open base) - 600 V
    I
    C
    Collector current (DC) - 5 A
    I
    CM
    Collector current peak value - 10 A
    I
    B
    Base current (DC) - 2 A
    I
    BM
    Base current peak value - A
    P
    tot
    Total power dissipation Tmb 25 - 50 W
    T
    stg
    Storage temperature -55 150
    T
    j
    Junction temperature - 150
    SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
    I
    CE
    Collector cut-off current V
    BE
    = 0V; V
    CE
    = V
    CESMmax
    - 1.0 mA
    I
    CES
    V
    BE
    = 0V; V
    CE
    = V
    CESMmax
    - 2.5 mA
    T
    j
    = 125
    V
    CEOsust
    Collector-emitter sustaining voltage I
    B
    = 0A; I
    C
    = 100mA - V
    L = 25mH
    V
    CEsat
    Collector-emitter saturation voltages I
    C
    = 4.0A; I
    B
    = 0.8A - 5 V
    V
    BEsat
    Base-emitter satuation voltage I
    C
    = 4.0A; I
    B
    = 0.8A - 1.5 V
    h
    FE
    DC current gain I
    C
    = 1A; V
    CE
    = 5V 8 40
    V
    F
    Diode forward voltage I
    F
    = 4.0A 1.5 2.0 V
    f
    T
    Transition frequency at f = 5MHz I
    C
    = 0.1A; V
    CE
    = 10V 1 - MHz
    C
    c
    Collector capacitance at f = 1MHz V
    CB
    = 10V 230 pF
    t
    s
    Switching times(16KHz line deflecton circuit) I
    C
    =4A,I
    B(end)
    =0.8A,V
    CC
    =100V - s
    t
    f
    Turn-off storage time Turn-off fall time I
    C
    =4A,I
    B(end)
    =0.8A,V
    CC
    =100V 0.35 1.0 s
    ELECTRICAL CHARACTERISTICS
    TO-3PM
    Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
    Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com
    www.DataSheet4U.com
    2SD2499 SILICON DIFFUSED POWER TRANSISTOR

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