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    D2318 Rohm

    Uploaded by

    surianto
    This document provides specifications for the 2SD2318 high-current gain power transistor. Key parameters include: - Collector-base voltage up to 80V, collector-emitter voltage up to 60V, emitter-base voltage up to 6V. - Collector current up to 3A continuous, 4.5A pulse. Junction temperature operating range of -55°C to +150°C. - DC current gain from 560 to 1800, transition frequency up to 60MHz. Collector-emitter saturation voltage as low as 0.5V. - Packaged in a CPT3 package and has a basic ordering unit of 2500 pieces.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    D2318 Rohm

    Uploaded by

    surianto
    119 views1 page
    This document provides specifications for the 2SD2318 high-current gain power transistor. Key parameters include: - Collector-base voltage up to 80V, collector-emitter voltage up to 60V, emitter-base voltage up to 6V. - Collector current up to 3A continuous, 4.5A pulse. Junction temperature operating range of -55°C to +150°C. - DC current gain from 560 to 1800, transition frequency up to 60MHz. Collector-emitter saturation voltage as low as 0.5V. - Packaged in a CPT3 package and has a basic ordering unit of 2500 pieces.

    Original Description:

    Manual

    Original Title

    D2318-Rohm

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    © © All Rights Reserved

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    This document provides specifications for the 2SD2318 high-current gain power transistor. Key parameters include: - Collector-base voltage up to 80V, collector-emitter voltage up to 60V, emitter-base voltage up to 6V. - Collector current up to 3A continuous, 4.5A pulse. Junction temperature operating range of -55°C to +150°C. - DC current gain from 560 to 1800, transition frequency up to 60MHz. Collector-emitter saturation voltage as low as 0.5V. - Packaged in a CPT3 package and has a basic ordering unit of 2500 pieces.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    119 views1 page

    D2318 Rohm

    Uploaded by

    surianto
    This document provides specifications for the 2SD2318 high-current gain power transistor. Key parameters include: - Collector-base voltage up to 80V, collector-emitter voltage up to 60V, emitter-base voltage up to 6V. - Collector current up to 3A continuous, 4.5A pulse. Junction temperature operating range of -55°C to +150°C. - DC current gain from 560 to 1800, transition frequency up to 60MHz. Collector-emitter saturation voltage as low as 0.5V. - Packaged in a CPT3 package and has a basic ordering unit of 2500 pieces.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 1

    2SD2318

    Transistors

    High-current gain Power Transistor


    (60V, 3A)
    2SD2318

    Parameter
    Collector-base voltage
    Collector-emitter voltage
    Emitter-base voltage

    Limits

    Unit

    VCBO
    VCEO

    80
    60
    6
    3
    4.5

    V
    V
    V
    A
    A(Pulse)
    W

    VEBO

    Collector current

    IC

    Collector power dissipation

    PC

    Junction temperature
    Storage temperature

    Tj
    Tstg

    1
    15
    150
    -55~+150

    1.5

    5.1
    6.5
    0.5

    C0.5

    2.5
    9.5

    W(Tc=25C)
    C
    C

    * Single pulse Pw=100ms

    !Packaging specifications and hFE


    Type
    Package
    hFE
    Code
    Basic ordering unit (pieces)

    2SD2318
    CPT3
    UV
    TL
    2500

    !Electrical characteristics (Ta=25C)


    Parameter

    Symbol

    Min.

    Typ.

    Max.

    Unit

    Collector-base breakdown voltage


    Collector-emitter breakdown voltage
    Emitter-base breakdown voltage
    Collector cutoff current
    Emitter cutoff current
    Collector-emitter saturation voltage

    BVCBO
    BVCEO

    V
    V
    V
    A

    IC=50A
    IC=1mA

    A
    V

    VEB=6V

    VCE(sat)

    80
    60
    6
    -

    Base-emitter saturation voltage

    VBE(sat)

    1.5

    hFE
    fT

    560
    -

    50
    60

    1800
    -

    MHz

    DC current transfer ratio


    Transition frequency
    Output capacitance

    * Measured using pulse current.

    BVEBO
    ICBO
    IEBO

    Cob

    100
    100
    1.0

    pF

    Conditions

    IE=50A
    VCB=80V
    IC/IB=2A/0.05A
    IC/IB=2A/0.05A
    VCE/IC=4V/0.5A
    VCE=5V, IE=-0.2A, f=10MHz
    VCB=10V, IE=0A, f=1MHz

    *
    *
    *

    2.3

    0.9
    2.3

    1.5

    0.65

    0.8Min.

    ROHM : CPT3
    EIAJ : SC-63

    Symbol

    5.5

    0.9
    2.3

    (3) (2) (1)

    1.0
    0.5

    !Absolute maximum ratings (Ta=25C)

    0.75

    !External dimensions (Units : mm)

    !Features
    1) High DC current gain.
    2) Low saturation voltage.
    (Typ. VCE(sat) =0.5V at IC / IB=2A / 0.5A)
    3) Complements the 2SB1639.

    (1) Base(Gate)
    (2) Collector(Drain)
    (3) Emitter(Source)

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