ASSIGNMENT #2: Show Your Complete Solutions. Use One Graph Each For Numbers 1 To 3
The document provides instructions for 5 assignment problems involving analyzing BJT transistor characteristics and circuits. Problem 1 involves analyzing characteristics to determine operating points, currents, voltages, and power for a fixed bias configuration. Problem 2 does the same for an emitter bias configuration. Problem 3 determines resistor values for a voltage divider network. Problem 4 involves designing a transistor inverter. Problem 5 involves determining sensitivity to changes in various parameters.
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ASSIGNMENT #2: Show Your Complete Solutions. Use One Graph Each For Numbers 1 To 3
The document provides instructions for 5 assignment problems involving analyzing BJT transistor characteristics and circuits. Problem 1 involves analyzing characteristics to determine operating points, currents, voltages, and power for a fixed bias configuration. Problem 2 does the same for an emitter bias configuration. Problem 3 determines resistor values for a voltage divider network. Problem 4 involves designing a transistor inverter. Problem 5 involves determining sensitivity to changes in various parameters.
Download as DOCX, PDF, TXT or read online on Scribd
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ASSIGNMENT #2: Show your complete solutions. Use one graph each for numbers 1 to 3.
1. Given the BJT transistor characteristics below:
(a) Draw a load line on the characteristics determined by E=21 V and RC =3 k for a fixed-bias configuration. (b) Choose an operating point midway between cutoff and saturation. Determine the value of R B to establish the resulting operating point. (c) What are the resulting values of I CQ and V CEQ ? (d) What is the value of at the operating point? (e) What is the value of defined by the operating point? (f) What is the saturation (I Csa t) current for the design? (g) Sketch the resulting fixed-bias configuration. (h) What is the dc power dissipated by the device at the operating point? (i) What is the power supplied by V CC ?
2. Using the characteristics above, determine the following for an emitter-bias configuration if a Q-point is defined at I CQ = 4 mA and V CEQ = 10 V. (a) R C if V CC = 24 V and R E = 1.2 k. (b) at the operating point. (c) R B .
3. (a) Using the characteristics above, determine R C and R E for a voltage-divider network having a Q-point of I CQ = 5 mA and V CEQ = 8 V. Use V CC =24 V and R C = 3RE. (b) Find V E . (c) Determine V B . (d) Find R 2 if R 1 =24k assuming that RE > 10R2. (e) Calculate at the Q-point.
4. Design the transistor inverter below to operate with a saturation current of 8 mA using a transistor with a beta of 100. Use a level of I B equal to 120% of I Bmax and standard resistor values.
5. For the network below, determine: (a) S (I CO ). (b) S (V BE ). (c) S () using T 1 as the temperature at which the parameter values are specified and (T 2 ) as 25% more than (T 1 ). (d) Determine the net change in I C if a change in operating conditions results in I CO increasing from 0.2 to 10 A, V BE drops from 0.7 to 0.5 V, and increases 25%.