Assignment 5 (Transistors)

ASSIGNMENT -4(BJT)
Q1.Determine the region of operation for the Q3.For the transistor circuit shown in fig4.has
transistor shown in the circuit given below β=75.Determine the value of output voltage VO
=for the given value of V BB=0V,1V,2V
(assume VCE(sat) =0.2V)
Q4.Find the value of VC as shown in fig.4
Q2.For the circuit shown in fig.1, 2, 3 find all

branch currents and node voltages. Assume
β=100 and VCE(sat) =0.2V Q5.For the circuit shown in fig6. If V E =4V
find the value of α and β respectively.
Q6.For the transistor shown in fig.7 β=25 find

the range of Vi such that 1.0≤VCE≤4.5.
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ASSIGNMENT -4(BJT)
Q7.A silicon transistor with V BE(sat) =0.8V Q10.For the circuit shown in fig.10 assume
β=100, VCE(sat) =0.2V is used in the circuit β=100
shown in fig.8.Find the minimum value of RC (a) Find the silicon transistor is in cut off,
for which transistor remain in saturation. Saturation or in the active region
(b)Find V0
(c) Find the minimum value for the
emitter resistor Re for which the transistor
operates in the active region.
Q8.In fig.8 if α=0.98 and V BE =0.7V, find R1 in

the circuit shown for an emitter current I E =-
2mA Neglect the reverse saturation current.
Q11.Measurements on the circuit of fig.11, 12,

13 produces the labelled voltages as indicated.
Find the value of β for each transistor.
Q9.For the circuit shown in fig.9
(a) Find Rc and RB in the circuit if VCC

=10V and VBB =5V, so that IC =10mA
VCE =5V (Assume silicon transistor
with β=100 VBE =0.7V,and neglect
reverse saturation current .
(b) Repeat part (a) if a 100Ω emitter
resistance is added to the circuit.
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ASSIGNMENT -4(BJT)
Q12.For the circuit shown in fig.14 Q15.In the circuit shown in fig.17 if Zener
measurements indicated that VB =- voltage is VZ=5V and β=100 find the value of
1.5V.Assumimg VBE =0.7V.Calculate VE ,α,β Ic and VCE.
and VC .If a transistor with β infinitive is used
what value of VB , VE, VC results.
Q16.In the shunt regulator of fig.18 find the

value regulated output voltage V 0.(assume
VBE=.7V)
Q13.For the circuit shown in fig.15find the

labelled voltages for (a) β=∞ (b)β=100
Q17.In the series regulator circuit shown in

fig.19 VBE=.7V β=50 VZ =8.3V find the output
voltage V0
Q14.For the circuit shown in fig.16 find VB

and VE for Vi= 0V,+3V,-5V and -10V,the BJT Q18.In the bipolar current source of fig.20, the
have β=100. diode voltage and transistor BE(base-emitter)
voltage are equal. If base current is neglected
find the value of collector current
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ASSIGNMENT -4(BJT)
Q19.For the circuit shown in fig.21a, the

transistor has β=80, and 0.7V dc voltage
source forward biases the transistor base
emitter junction. If the transistor has the I B/VBE
characteristics shown in fig.22b, Calculate the
circuit voltage gain when Vi is ±50mV.
Q21.Given the BJT transfer characteristics of

fig.23
Questions on dc load line and Q-point
(a) Draw the load line on the characteristics
Q20.For the circuits shown in fig.22 find the
determined by E=21V and RC=3KΩ for a fixed
Q-point values (ICQ,VCEQ) for the given β as
bias configuration shown in fig.24
indicated.
(b) Choose an operating point midway
between cut off and saturation. Determine the
value of RB to establish the resulting operating
point.
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ASSIGNMENT -4(BJT)
(c) What are the resulting values of I CQ and
VCEQ?
(d) What is the value of β at the operating
point?
(e) What is the value of α defined by the
operating point?
(f)What is the saturation current (ICsat )for
design
(h)What is the d.c power dissipated by the
device at the operating point?
(i) What is the power supplied by VCC? Q23.Using the characteristics of fig.23
(j)Determine the power dissipated by the determine the following for an emitter bias
resistive elements. configuration shown in fig.25 if a Q-point is
defined at ICQ =4mA and VCEQ=10V find
(a)RC if Vcc=24V and RE=1.2KΩ
(b) β and the operating point
(c) RB
(d) Power dissipated by the transistor
(e) Power dissipated by the resistor RC
Fig.23
Q22.Device Characteristics are shown in Q24.Using the characteristics of fig.23

fig.24 determine VCC RB ,and RC for the fixed (a)Determine RC and RE for a network shown
bias configuration. in fig.26 having Q-point of ICQ=5mA and
VCEQ=8V RC=3RE
(b)Find VE
(c)Determine VB
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ASSIGNMENT -4(BJT)
(d)Find R2 if R1=24KΩ assuming that
βRE≥10R2
Q27.For the CE amplifier of fig.29 place the q-

point optimally so that the load voltage has
maximum undistorted swing .deduce that the
optimal Q-point is at
ICQ= VCC/(Rac+Rdc)
Q25.For the transistor circuit shown in VCEQ= VCC- ICQ Rdc
fig.27has collector characteristics shown in Where Rac=RCIIRL
fig.28Determine the circuit Q-point and and Rdc=Rc+ RE
estimate the maximum symmetrical output Note-under a.c conditions the capacitor acts as
voltage swing. Note that VCC=18V,RC=2.2KΩ short circuits show that Rac=RCIIRL as different
and IB=40µA. from Rdc=Rc+ RE
Q26.A transistor circuit shown in fig.29 has Q28.The figure shows the output
VCC=12V,RC=820Ω,RE=380Ω and characteristics of an n-p-n transistor in CE
IB=60µA.Draw the dc load line on the configuration. What is β at Q-point? Mark V CC
characteristics in fig.28 and determine the on the characteristics and identify ac and dc
maximum symmetrical output voltage swing. load lines. What are the values of R C and RE .If
the load lines are for the amplifier (CE) of
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ASSIGNMENT -4(BJT)
fig.30 with RL=∞ what is the maximum (b) If VBB is varied while maintaining other
unloaded undistorted voltage swing parameters unchanged in part (a), what is the
approximately. What is the optimal Q-point for minimum VBB required to drive the transistor
a load of 2KΩ which is capacitively coupled into saturation? (Assume that VCE(sat)=.3V)
to the output.
Q30.(a)A silicon transistor with VCE(sat)=0.2V

VBE=0.8V is used in the circuit shown in
fig.31. Find the minimum value of RL for
which the transistor is in saturation. Assume
IC≈IE, VBB=12V and VCE.=10V ,
(b)Determine voltage V0 at saturation for RL=
RLmin, the minimum value of RL for which the
transistor remain in saturation.
(c) What happens to the saturation state of the
transistor if the collector bias voltage is
changed from 10V to VCC=15V in part (a)
while maintaining other parameters
unchanged? Calculate VCE and V0 for RL=15K
Q29.(a)Consider the transistor circuit of fig.30

for VCC=10V,VBB=5V,VBE=0.7V,Rb=10KΩ, Transistor as a Switch
Rc=500Ω Re=100Ω and β=100 calculate IB, IC, Q31.Determine RB and RC for the transistor
IE,VCB and VCE. inverter of fig.32 if ICsat=10mA
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ASSIGNMENT -4(BJT)
Where T s the fundamental period of the

signal. The LED current ILED is required to be
maintained at a constant value of 10mA for its
glow with full brightness.
(a) What happens to the state of the LED when
Vi(t)=-5V?
Q32For the circuit shown in fig.33 find Rsat (b)For Re=0(emitter is grounded, find the
Rcutoff assume VCE(sat)=0 and ICEO=0mA. maximum value Rb for which the transistor
will be in saturation with saturation current
ICsat=10mA.Also find the corresponding value
of RC for the satisfactory operation of the
circuit. Assume that the transistor is of silicon
material with β=50and the voltage drop V LED
across the LED at current 10mA is 2V.
(c) For Rb=10KΩ, Rc=770Ω and Re=0 in part
(b) explain the operation of the circuit.
(d) What is the minimum value of V i(t)=Vhigh
required to glow the LED with full brightness
if Rb=0 and Re=200Ω is fixed in part (c)?
Q33.Considfer the transistor circuit shown in

fig34.where a LED is connected in series with
the collector of the transistor. The input V i(t)
to the circuit is a symmetrical square wave
signal defined by
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ASSIGNMENT -4(BJT)
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ASSIGNMENT -4(BJT)

Q4.Find the value of VC as shown in fig.4

Q2.For the circuit shown in fig.1, 2, 3 find all

Q6.For the transistor shown in fig.7 β=25 find

Q8.In fig.8 if α=0.98 and V BE =0.7V, find R1 in

Q11.Measurements on the circuit of fig.11, 12,

Q9.For the circuit shown in fig.9

(a) Find Rc and RB in the circuit if VCC

Q16.In the shunt regulator of fig.18 find the

Q13.For the circuit shown in fig.15find the

Q17.In the series regulator circuit shown in

Q14.For the circuit shown in fig.16 find VB

Q19.For the circuit shown in fig.21a, the

Q21.Given the BJT transfer characteristics of

Q22.Device Characteristics are shown in Q24.Using the characteristics of fig.23

Q27.For the CE amplifier of fig.29 place the q-

Q30.(a)A silicon transistor with VCE(sat)=0.2V

Q29.(a)Consider the transistor circuit of fig.30

Where T s the fundamental period of the

Q33.Considfer the transistor circuit shown in

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