Bcr3Am: Mitsubishi Semiconductor Triac

MITSUBISHI SEMICONDUCTOR TRIAC
BCR3AM
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR3AM
OUTLINE DRAWING
Dimensions
in mm
10 MAX
0.5
3.20.2
23.70.5
4
3.20.1
TYPE NAME
VOLTAGE
CLASS
8 MAX
4 MAX
12 MIN
1.20.1
0.8
0.8
1.5 MIN
4.5 MAX
2.5 2.5
1.550.1
IT (RMS) ........................................................................ 3A
VDRM ..............................................................400V/600V
IFGT !, IRGT !, IRGT # ......................... 30mA (15mA) 6
123
10 MAX
24
1
2
3
34
1
0.5
Measurement point of
case temperature
T1 TERMINAL
T2 TERMINAL
GATE TERMINAL
T2 TERMINAL
TO-202
APPLICATION
Contactless AC switches, light dimmer, electric blankets,
control of household equipment such as electric fan,
solenoid drivers, small motor control, other general
purpose control applications
MAXIMUM RATINGS
Symbol
Voltage class
Parameter
12
Unit
VDRM
Repetitive peak off-state voltage 1
400
600
VDSM
Non-repetitive peak off-state voltage 1
500
720
Conditions
Parameter
Symbol
IT (RMS)
RMS on-state current
Commercial frequency, sine full wave 360 conduction, Tc =86C
ITSM
Surge on-state current
60Hz sinewave 1 full cycle, peak value, non-repetitive
I2t
I2t for fusing
Value corresponding to 1 cycle of half wave 60Hz, surge on-state

current
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM
Ratings
Unit
30
3.7
A2s
0.3
Peak gate voltage
IGM
Peak gate current
0.5
Tj
Junction temperature
40 ~ +125
40 ~ +125
1.6
Storage temperature
Tstg
Weight
Typical value
1. Gate open.
Feb.1999
BCR3AM
LOW POWER USE
ELECTRICAL CHARACTERISTICS
Limits
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IDRM
Repetitive peak off-state current
Tj=125C, VDRM applied
2.0
mA
VTM
On-state voltage
Tc=25C, ITM=4.5A, Instantaneous measurement
1.5
1.5
1.5
VFGT !
VRGT !
Gate trigger voltage 2
Tj=25C, VD=6V, RL=6, RG=330
VRGT #
1.5
IFGT !
30 6
mA
30 6
mA
30 6
mA
IRGT !
Gate trigger current 2
Tj=25C, VD=6V, RL=6, RG=330
IRGT #
VGD
Gate non-trigger voltage
Tj=125C, VD=1/2VDRM
0.2
Rth (j-c)
Thermal resistance
Junction to case 4 5
10
C/ W
(dv/dt)c
Critical-rate of rise of off-state

commutating voltage
V/s
2. Measurement using the gate trigger characteristics measurement circuit.

3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
4. Case temperature is measured at the T2 terminal 1.5mm away from the molded case.
5. The contact thermal resistance Rth (c-f) in case of greasing is 3C/W.
6. High sensitivity (IGT15mA) is also available. (IGT item 1)
Voltage
class
VDRM
(V)
400
(dv/dt) c
Min.
SUPPLY
VOLTAGE
1. Junction temperature
Tj=125C
5
12
Commutating voltage and current waveforms

(inductive load)
Test conditions
Unit
600
V/s
TIME
2. Rate of decay of on-state commutating current

(di/dt)c=1.5A/ms
MAIN CURRENT
3. Peak off-state voltage

VD=400V
MAIN
VOLTAGE
(di/dt)c
TIME
TIME
(dv/dt)c
VD
PERFORMANCE CURVES
RATED SURGE ON-STATE CURRENT
40
TC = 25C
101
7
5
3
2
100
7
5
3
2
101
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
MAXIMUM ON-STATE CHARACTERISTICS

102
7
5
3
2
35
30
25
20
15
10
5
0
100
2 3 4 5 7 101
2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
BCR3AM
LOW POWER USE
GATE TRIGGER CURRENT VS.

JUNCTION TEMPERATURE
100 (%)
102
7
5
3
2
PGM = 3W
PG(AV) = 0.3W
101
7
5
3
2
IGM =
0.5A
VGT
100
7
5
3
2
IRGT I
IFGT I, IRGT III VGD = 0.2V

101
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
GATE TRIGGER CURRENT (Tj = tC)

GATE TRIGGER CURRENT (Tj = 25C)
GATE VOLTAGE (V)
GATE CHARACTERISTICS
103
7
5
4
3
2
101
60 40 20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (C)
MAXIMUM TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS
7
5
4
3
2
101
60 40 20 0 20 40 60 80 100 120 140
TRANSIENT THERMAL IMPEDANCE (C/W)
102
102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105

102
7 JUNCTION TO AMBIENT
5
3
2
101
7
5
3
2
100
7
5
3
2
101
101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER

DISSIPATION
ALLOWABLE CASE TEMPERATURE

VS. RMS ON-STATE CURRENT
5.0
130
4.5
120
4.0
360
3.5 CONDUCTION
3.0 RESISTIVE,
INDUCTIVE
2.5 LOADS
2.0
1.5
1.0
0.5
0
JUNCTION TO CASE
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

RMS ON-STATE CURRENT (A)
CASE TEMPERATURE (C)
ON-STATE POWER DISSIPATION (W)
GATE TRIGGER VOLTAGE (Tj = tC)

GATE TRIGGER VOLTAGE (Tj = 25C)
100 (%)
GATE TRIGGER VOLTAGE VS.

TYPICAL EXAMPLE
IRGT III
102
IFGT I, IRGT I
7
5
4
3
2
GATE CURRENT (mA)
103
7
5
4
3
2
TYPICAL EXAMPLE
CURVES APPLY REGARDLESS

OF CONDUCTION ANGLE
110
100
90
80
70
60 360
CONDUCTION
50 RESISTIVE,
40 INDUCTIVE
LOADS
30
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Feb.1999
BCR3AM
LOW POWER USE
70
60
50
40
0
20
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
REPETITIVE PEAK OFF-STATE

CURRENT VS. JUNCTION
TEMPERATURE
HOLDING CURRENT VS.

100 (%)
HOLDING CURRENT (Tj = tC)
HOLDING CURRENT (Tj = 25C)
103
7
5
4
3
2
TYPICAL EXAMPLE
102
7
5
4
3
2
101
60 40 20 0 20 40 60 80 100 120 140
102
60 40 20 0 20 40 60 80 100 120 140
100
40
103
7
5
3
2
101
7
5
3
2
60
104
7
5
3
2
102
7
5
3
2
80
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
105
7 TYPICAL EXAMPLE
5
3
2
103
7
5
3
2
ALLOWABLE AMBIENT TEMPERATURE

160
NATURAL CONVECTION
NO FINS
140
OF CONDUCTION ANGLE
120
RESISTIVE, INDUCTIVE
100
LOADS
30 30 t1.2
LACHING CURRENT VS.

BREAKOVER VOLTAGE VS.

T2 , G
TYPICAL
EXAMPLE
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
DISTRIBUTION
T2+, G+ TYPICAL

T2 , G EXAMPLE
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC)

REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C)
100 (%)
30
LACHING CURRENT (mA)
50 50 t1.2
AMBIENT TEMPERATURE (C)
ALLOWABLE AMBIENT TEMPERATURE

130
NATURAL CONVECTION
120
ALL FINS ARE BLACK PAINTED
IRON AND GREASED
110
100
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE
90
LOADS
80
BREAKOVER VOLTAGE (Tj = tC)

BREAKOVER VOLTAGE (Tj = 25C)
AMBIENT TEMPERATURE (C)
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
60 40 20 0 20 40 60 80 100 120 140
0
60 40 20 0 20 40 60 80 100120 140
Feb.1999
BCR3AM
LOW POWER USE
BREAKOVER VOLTAGE VS.

RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
Tj = 125C
BREAKOVER VOLTAGE (dv/dt = xV/s )

BREAKOVER VOLTAGE (dv/dt = 1V/s )
140
120
100
80
60
40
III QUADRANT
20
I QUADRANT
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
CRITICAL RATE OF RISE OF OFF-STATE

COMMUTATING VOLTAGE (V/s)
100 (%)
COMMUTATION CHARACTERISTICS
102 VOLTAGE WAVEFORM
TYPICAL
7
t
EXAMPLE
5 (dv/dt)C
VD
Tj = 125C
4
IT = 4A
3 CURRENT WAVEFORM
(di/dt)C
= 500s
IT
2
VD = 200V
t
f = 3Hz
101
7
I QUADRANT
5
4
III QUADRANT
3
MINIMUM
2 CHARACTERISTICS
VALUE
100 0
10
100 (%)
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
103
7
5
4
3
2
2 3 4 5 7 102
RATE OF DECAY OF ON-STATE

COMMUTATING CURRENT (A/ms)
RATE OF RISE OF OFF-STATE VOLTAGE (V/s)
GATE TRIGGER CURRENT VS.

GATE CURRENT PULSE WIDTH
2 3 4 5 7 101
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS

6
TYPICAL EXAMPLE
IRGT III
6V
IRGT I
IFGT I
TEST PROCEDURE 1
102
7
5
4
3
2
6V
RG
RG
TEST PROCEDURE 2
6V
101 0
10
2 3 4 5 7 101
2 3 4 5 7 102
GATE CURRENT PULSE WIDTH (s)
RG
TEST PROCEDURE 3
Feb.1999
This datasheet has been download from:

www.datasheetcatalog.com
Datasheets for electronics components.

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MITSUBISHI SEMICONDUCTOR TRIAC

Repetitive peak off-state voltage 1

Non-repetitive peak off-state voltage 1

RMS on-state current

Commercial frequency, sine full wave 360 conduction, Tc =86C

Surge on-state current

60Hz sinewave 1 full cycle, peak value, non-repetitive

I2t for fusing

Value corresponding to 1 cycle of half wave 60Hz, surge on-state

Peak gate power dissipation

Average gate power dissipation

Peak gate voltage

Peak gate current

MITSUBISHI SEMICONDUCTOR TRIAC

Repetitive peak off-state current

Tj=125C, VDRM applied

Tc=25C, ITM=4.5A, Instantaneous measurement

Gate trigger voltage 2

Tj=25C, VD=6V, RL=6, RG=330

Gate trigger current 2

Tj=25C, VD=6V, RL=6, RG=330

Gate non-trigger voltage

Critical-rate of rise of off-state

2. Measurement using the gate trigger characteristics measurement circuit.

Commutating voltage and current waveforms

2. Rate of decay of on-state commutating current

3. Peak off-state voltage

SURGE ON-STATE CURRENT (A)

ON-STATE CURRENT (A)

MAXIMUM ON-STATE CHARACTERISTICS

MITSUBISHI SEMICONDUCTOR TRIAC

GATE TRIGGER CURRENT VS.

IFGT I, IRGT III VGD = 0.2V

GATE TRIGGER CURRENT (Tj = tC)

GATE VOLTAGE (V)

MAXIMUM TRANSIENT THERMAL

TRANSIENT THERMAL IMPEDANCE (C/W)

102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105

MAXIMUM ON-STATE POWER

ALLOWABLE CASE TEMPERATURE

JUNCTION TEMPERATURE (C)

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

CASE TEMPERATURE (C)

ON-STATE POWER DISSIPATION (W)

GATE TRIGGER VOLTAGE (Tj = tC)

GATE TRIGGER VOLTAGE VS.

GATE CURRENT (mA)

CURVES APPLY REGARDLESS

MITSUBISHI SEMICONDUCTOR TRIAC

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

REPETITIVE PEAK OFF-STATE

HOLDING CURRENT VS.

RMS ON-STATE CURRENT (A)

RMS ON-STATE CURRENT (A)

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

ALLOWABLE AMBIENT TEMPERATURE

JUNCTION TEMPERATURE (C)

JUNCTION TEMPERATURE (C)