MITSUBISHI SEMICONDUCTOR TRIAC

BCR16PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE

BCR16PM

OUTLINE DRAWING
10.5 MAX 5.2

Dimensions in mm

2.8

17 5.0

1.2
TYPE NAME VOLTAGE CLASS

3.20.2

13.5 MIN

3.6

1.3 MAX

0.8

2.54

2.54

8.5
0.5

2.6

IT (RMS) ...................................................................... 16A VDRM ..............................................................400V/600V IFGT !, IRGT !, IRGT # ......................... 30mA (20mA) V5 Viso ........................................................................ 1500V UL Recognized: File No. E80276

123 2

Measurement point of case temperature

1 T1 TERMINAL 2 T2 TERMINAL 3 3 GATE TERMINAL

TO-220F

APPLICATION Contactless AC switches, light dimmer, electric flasher unit, hair drier, control of household equipment such as TV sets refrigerator washing machine electric fan, other general purpose control applications

MAXIMUM RATINGS
Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V

Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg Viso

Parameter RMS on-state current Surge on-state current I2t for fusing

Conditions Commercial power frequency, sine full wave 360 conduction, Tc=71C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current

4.5

Ratings 16 160 107.5 5.0 0.5 10 2 40 ~ +125 40 ~ +125

Unit A A A2s W W V A C C g V

Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Isolation voltage Typical value Ta=25C, AC 1 minute, T 1 T2 G terminal to case

2.0 1500

V1. Gate open.

Feb.1999

MITSUBISHI SEMICONDUCTOR TRIAC

BCR16PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS
Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD R th (j-c) (dv/dt) c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage Gate trigger current V2 Gate trigger voltage V2 Parameter Repetitive peak off-state current On-state voltage ! @ # ! @ # Tj=125C, VD=1/2VDRM Junction to case V4 Tj=25C, VD =6V, RL=6, RG=330 Tj=25C, VD =6V, RL=6, RG=330 Test conditions Tj=125C, V DRM applied Tc=25C, ITM=25A, Instantaneous measurement Limits Min. 0.2
V3

Typ.

Max. 2.0 1.5 1.5 1.5 1.5 30 V5 30 V5 30 V5 3.0

Unit mA V V V V mA mA mA V C/ W V/s

V2. Measurement using the gate trigger characteristics measurement circuit. V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. V4. The contact thermal resistance R th (c-f) in case of greasing is 0.5C/W. V5. High sensitivity (I GT20mA) is also available. (IGT item 1) (dv/dt) c Symbol R 8 400 L 10 V/s R 12 600 L 10 Min. 1. Junction temperature Tj =125C 2. Rate of decay of on-state commutating current (di/dt)c=8A/ms 3. Peak off-state voltage VD =400V Unit Test conditions

Voltage class

VDRM (V)

Commutating voltage and current waveforms (inductive load)

SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c

TIME

TIME TIME VD

PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS RATED SURGE ON-STATE CURRENT 200

SURGE ON-STATE CURRENT (A)

ON-STATE CURRENT (A)

103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 ON-STATE VOLTAGE (V) Tj = 125C Tj = 25C

180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102

CONDUCTION TIME (CYCLES AT 60Hz)

Feb.1999

MITSUBISHI SEMICONDUCTOR TRIAC

BCR16PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE

GATE CHARACTERISTICS

GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE

100 (%)

3 2 VGM = 10V

PG(AV) = 0.5W PGM = 5W

GATE VOLTAGE (V)

GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C)

101 7 5 3 VGT = 1.5V 2 100 7 5 3 2

IGM = 2A

103 7 5 4 3 2 102 7 5 4 3 2

TYPICAL EXAMPLE

IRGT III

IFGT I, IRGT I

IFGT I, IRGT I, IRGT III VGD = 0.2V 101 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA)

101 60 40 20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE)

GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE

100 (%)

GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C)

103 7 5 4 3 2 102 7 5 4 3 2

TYPICAL EXAMPLE

TRANSIENT THERMAL IMPEDANCE (C/W)

102 2 3 5 7 103 2 3 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz)

101 60 40 20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C)

MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT)

MAXIMUM ON-STATE POWER DISSIPATION

TRANSIENT THERMAL IMPEDANCE (C/W)

7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2

NO FINS

ON-STATE POWER DISSIPATION (W)

103

40 35 30 360 CONDUCTION 25 RESISTIVE, INDUCTIVE 20 LOADS 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20

102

101

100

101 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 CONDUCTION TIME (CYCLES AT 60Hz)

RMS ON-STATE CURRENT (A)

Feb.1999

MITSUBISHI SEMICONDUCTOR TRIAC

BCR16PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE

ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160

140 120 100 80 60

CURVES APPLY REGARDLESS OF CONDUCTION ANGLE

ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A)

360 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 2 4 6 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A)

100 (%)

REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 60 40 20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) 103 7 5 4 3 2 102 7 5 4 3 2
100 (%)

HOLDING CURRENT VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE

REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C)

HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C)

101 60 40 20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C)

LACHING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100

BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 60 40 20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (C)

T2 , G TYPICAL T2 , G EXAMPLE
+ +

40

40

80

120

160

JUNCTION TEMPERATURE (C)

BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C)

,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,,

LACHING CURRENT (mA)

+ T2 , G TYPICAL EXAMPLE

Feb.1999

MITSUBISHI SEMICONDUCTOR TRIAC

BCR16PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE

100 (%)

160 140

CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s)

BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE TYPICAL EXAMPLE Tj = 125C I QUADRANT III QUADRANT #2

COMMUTATION CHARACTERISTICS 3 TYPICAL 2 EXAMPLE 102 Tj = 125C 7 IT = 4A 5 = 500s 3 VD = 200V 2 f = 3Hz

BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s )

(dv/dt)C

t VD

120 100 80 60 40 20

CURRENT WAVEFORM (di/dt)C IT

#1

0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/s)

101 I QUADRANT 7 5 3 MINIMUM 2 CHARACIII QUADRANT 100 TERISTICS 7 VALUE 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms)

GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102
100 (%)

GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6

TYPICAL EXAMPLE IFGT I IRGT I

GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC)

IRGT III

TEST PROCEDURE 1 6

TEST PROCEDURE 2

6V V

A RG

GATE CURRENT PULSE WIDTH (s)

TEST PROCEDURE 3

Feb.1999

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