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    PSPICE Demonstrations and Exercises (SET: 14) : Elec Eng 2ei5 Electronic Devices and Circuits I

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    Mike Snow
    This document is a set of instructions for an electronics course lab on using PSpice to simulate and analyze the output characteristics of bipolar junction transistors (BJTs). The objective is to learn how to model and understand BJT behavior in PSpice. The first example asks students to sketch, simulate, and plot the common-emitter output characteristic of an NPN BJT circuit for different base currents, varying the collector-emitter voltage. Analysis of the transistor regions of operation is provided.

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    PSPICE Demonstrations and Exercises (SET: 14) : Elec Eng 2ei5 Electronic Devices and Circuits I

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    Mike Snow
    49 views1 page
    This document is a set of instructions for an electronics course lab on using PSpice to simulate and analyze the output characteristics of bipolar junction transistors (BJTs). The objective is to learn how to model and understand BJT behavior in PSpice. The first example asks students to sketch, simulate, and plot the common-emitter output characteristic of an NPN BJT circuit for different base currents, varying the collector-emitter voltage. Analysis of the transistor regions of operation is provided.

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    This document is a set of instructions for an electronics course lab on using PSpice to simulate and analyze the output characteristics of bipolar junction transistors (BJTs). The objective is to learn how to model and understand BJT behavior in PSpice. The first example asks students to sketch, simulate, and plot the common-emitter output characteristic of an NPN BJT circuit for different base currents, varying the collector-emitter voltage. Analysis of the transistor regions of operation is provided.

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    49 views1 page

    PSPICE Demonstrations and Exercises (SET: 14) : Elec Eng 2ei5 Electronic Devices and Circuits I

    Uploaded by

    Mike Snow
    This document is a set of instructions for an electronics course lab on using PSpice to simulate and analyze the output characteristics of bipolar junction transistors (BJTs). The objective is to learn how to model and understand BJT behavior in PSpice. The first example asks students to sketch, simulate, and plot the common-emitter output characteristic of an NPN BJT circuit for different base currents, varying the collector-emitter voltage. Analysis of the transistor regions of operation is provided.

    Copyright:

    © All Rights Reserved
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    of 1

    ELEC ENG 2EI5 Electronic Devices and Circuits I

    Page: 1 of 7
    PSPICE Demonstrations and Exercises (SET: 14)

    ELEC ENG 2EI5


    ELECTRONIC DEVICES and CIRCUITS I
    Term II, January April 2005

    PSPICE Demonstrations and Exercises (SET: 14)


    Instructor: Dr. M. Bakr
    Prepared by: Dr. M. Bakr and Anthony Bilinski
    Objective: To learn and use the PSpice model and its parameters for Bipolar Junction Transistors(BJT).
    To understand and explain the output and transfer characteristics of the BJT.
    Example 1) Sketch the common-emitter output
    characteristic for the npn Bipolar Junction transistor in the
    shown circuit for IB=10A. Verify your result using a
    simulation in PSpice. Vary the collector-emitter voltage
    VCE between -5V and 10V with a step size of 10mV.
    Perform this sweep for base currents IB ={10A, 30A,
    50A}. Plot the resulting collector current waveforms. For
    the BJT the saturation current is IS=0.1fA
    The 0.2V value is an
    assumed small voltage
    range around 0V.

    Common-e mitter Output


    Characte risitic of the NPN transistor
    300
    Collector Current ( A)

    Analysis:
    To determine the shape of the
    output characteristic calculate the
    collector current as a function of
    the collector-emitter voltage VCE.
    For VCE<0.2 (an assumed small
    voltage). The transistor is
    operating in the reverse-active
    region. IE=-RIB=-50A.
    IC=IE/R=-60A.
    For -0.2<VCE<0.2V the transistor
    is operating in the saturation
    region and appears as a closed
    switch with varying currents
    maintaining IB+IC-IE=0. For
    VCE>0.2 the transistor is
    operating in the forward active
    region. IC=FIB and
    IE=IC/F=260A.

    250
    200
    150
    100
    50
    0
    -5

    -3

    -1 -50

    -100
    Voltage VCE (Volts)

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