EDC-1 Sem III

EXPERIMENT 11: NPN BJT COMMON EMITTER

CHARACTERISTICS
AIM: To study input and output characteristics of a NPN Bipolar Junction
Transistor (BJT) in Common-emitter configuration.

APPARATUS: BJT (BC-547B), Bread board, resistor (1KΩ, 100KΩ), connecting

wires, Ammeters (0‐ 10mA, 0‐ 100μ A), DC power supply (0‐ 30V) and
multimeter.

CIRCUIT DIAGRAM:

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THEORY:

The transistor is a two junction, three terminal semiconductor device which has three regions
namely the emitter region, the base region, and the collector region. There are two types of
transistors. An npn transistor has an n type emitter, a p type base and an n type collector while a
pnp transistor has a p type emitter, an n type base and a p type collector. The emitter is heavily
doped, base region is thin and lightly doped and collector is moderately doped and is the largest.
The current conduction in transistors takes place due to both charge carriers- that is electrons and
holes and hence they are named Bipolar Junction Transistors (BJT).

BJTs are extensively used in all types of electronic circuits. The aim of this part of the experiment
is to familiarize you with the basic modes of operation and features of a BJT. The BJT that you
will be using in this experiment is BC 547 (the pin diagram is shown in Fig.1), which has a typical
current rating of 100 mA (maximum).
Two of the most important applications for the transistor are (1) as an amplifier in analog electronic
systems, and (2) as a switch in digital systems.

Basic Concepts The operation of the BJT is based on the principles of the pn junction. In the npn
BJT, electrons are injected from the forward-biased emitter into the thin base region where, as
minority carriers, they diffuse toward the reverse-biased collector. Some of these electrons
recombine with holes in the base region, thus producing a small base current, IB. The remaining
electrons reach the collector where they provide the main source of carriers for the collector
current, IC. Thus, if there are no electrons injected from the emitter, there will be (almost) no
collector current and, therefore, the emitter current controls the collector current. Combining
currents, the total emitter current is given as IE = IB + IC. For normal pnp operation, the polarity of
both voltage sources must be reversed.

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EDC-1 Sem III

(Don’t draw)- only for reference

(Don’t draw)- only for reference

BJTs are used to amplify current, using a small base current to control a large current between the
collector and the emitter. This amplification is so important that one of the most noted parameters
of gain, β (or hFE), which is the ratio of collector current to base current.

When the BJT is used with the base and emitter terminals as the input and the collector and emitter
terminals as the output, the current gain as well as the voltage gain is large. It is for this reason that
this common-emitter (CE) configuration is the most useful connection for the BJT in electronic
systems

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Operation regions and characteristics curves:

Depending upon the biasing of the two junctions, emitter-base (EB) junction and collector-
base(CB) the transistor is said to be in one of the four modes of operation. as described below:

Operating B-E B-C Features

region Junction Junction
Cut-off Reverse Reverse IB ≈ IC≈IE≈0 Off state – no current (VBE<0.7V)
Saturation Forward Forward Conducting structure VBE=0.7V VCE ≈ 0.2V
Active Forward Reverse Amplifier Gain: 100-1000 (IC=βIB) VBE=0.7V VCE>0.2V
Reverse- Reverse Forward Limited use Gain< 1 (IB>IC)
active
NOTE : VBE will vary from 0.6 to 0.7 V

The most important characteristics of transistor in any configuration are input and output
characteristics.

A. Input Characteristics: ‐
It is the curve between input current IB and input voltage VBE constant collector emitter voltage
VCE. The input characteristic resembles a forward biased diode curve. After cut in voltage the IB
increases rapidly with small increase in VBE. It means that dynamic input resistance is small in CE
configuration. It is the ratio of change in VBE to the resulting change in base current at constant
collector emitter voltage. It is given by ΔVBE / ΔIB

B. Output Characteristics:‐
This characteristic shows relation between collector current IC and collector voltage for various
values of base current. The change in collector emitter voltage causes small change in the collector
current for the constant base current, which defines the dynamic resistance and is given as ΔVCE /
ΔIC at constant IB. The output characteristic of common emitter configuration consists of three
regions: Active, Saturation and Cut‐off.

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EDC-1 Sem III

Active region: In this region base‐emitter junction is forward biased and base‐collector junction
is reversed biased. The curves are approximately horizontal in this region.

Saturation region: In this region both the junctions are forward biased.

Cut‐off: In this region, both the junctions are reverse biased. When the base current is made equal
to zero, the collector current is reverse leakage current ICEO. The region below IB = 0 is the called
the cut-off region.

OBSERVATION:
INPUT CHARACTERISTICS
VBB VCE=2V VCE=3V(Choose value which u
took in lab)
VBE (V) IB (µA) VBE (V) IB (µA)
0.1
0.2
.
1
1.5
.
5

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EDC-1 Sem III

OUTPUT CHARACTERISTICS
VCC IB =10(µA) IB =20(µA)(Choose value which
u took in lab)
VCE (V) Ic (mA) VCE (V) Ic(mA)
0
0.2
.
.
1
1.5
.
.
5
6
.
20

PROCEDURE:
A. Input Characteristics
1) Make the circuit connection as shown in the circuit diagram.
2) Set the voltage VCE = 2 V and vary IB with the help of VBB and measure VBE.
3) Set the voltage VCE = 3 V and vary IB with the help of VBB and measure VBE.
4) Plot graph of IB v/s VBE.
5) Evaluate dynamic input resistance which is the ratio of change in VBE to the resulting change in
base current at constant collector emitter voltage. It is given by ΔVBE / ΔIB
6) The reciprocal of the slope of the linear part of the characteristic gives the dynamic input
resistance of the transistor.

B. Output Characteristics
1) Keep IB constant say 10 μA, vary VCE and note down the collector current IC.
2) Now keep IB = 20 μA, vary VCE and note down the collector current IC.
3) Plot graph of IB v/s VCE.
4) The change in collector emitter voltage causes small change in the collector current for the
constant base current, which defines the dynamic output resistance and is given as ΔVCE / ΔIC at
constant IB or the output conductance is given ∆IC/∆VCE with the IB at a constant current.
5) Find output conductance from the slope of the linear portion of the characteristic curves and
also find small-signal current gain which is calculated by β = ∆IC/∆IB with the VCE at a constant
voltage.

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EDC-1 Sem III

CALCULATION:
1. Small-Signal Current Gain: β = ∆IC/∆IB with the VCE at a constant voltage.
2. Dynamic input resistance: It is given by ΔVBE / ΔIB at constant VCE
3. Dynamic output resistance: It is given as ΔVCE / ΔIC at constant IB

RESULTS:
1. Small-Signal Current Gain:___________
2. Dynamic input resistance: ____________
3. Dynamic output resistance: ____________

CONCLUSION:

POST LAB QUESTIONS:

1. What is the function of base region of a transistor? Why this region is made thin and
lightly doped?

2. What is the voltage across the collector to emitter terminal when the transistor is in
(i) saturation (ii) cut-off (iii) active region?

3. Describe, based on your observations, the I-V curves of npn transistor. At

approximately what collector-emitter voltage (VCE) does the transition from
saturation to active region occur?

4. Describe the necessary conditions operation in the active region in terms of VBE and
VCE.

5. Explain early effect?

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