Experiment 07 Mosfet Name: Date:: Objective

Electronic Circuit Analysis and Design Laboratory Manual
EXPERIMENT 07 MOSFET
NAME: DATE:
OBJECTIVE
 To study transfer and output characteristics of an N-Channel Mosfet in common source
configuration.
TEXT REFENCES
 https://inderjitsingh87.weebly.com/uploads/2/1/1/4/21144104/edc1_expt_09.pdf
 https://www.elprocus.com/mosfet-as-a-switch-circuit-diagram-free-circuits/
COMPONENTS AND EQUIPMENT

No. Device Range/Rating Quantity
1. DC Power supply 0 -30V
2. Function Generator 1
3. Cathode Ray Oscilloscope 1
4. Connecting Wire
5. Breadboard
6. MOSFET (2N7000)
7. Ammeters (0‐10mA/ 0‐25mA) 1
8. Resistor 1KΩ, 100KΩ 2
DISCUSSION
The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a
semiconductor device which is widely used for switching and amplifying electronic signals in
the electronic devices. The MOSFET is a four-terminal device with source(S), gate (G), drain
(D) and body (B) terminals. The body of the MOSFET is frequently connected to the source
terminal so making it a three-terminal device like field effect transistor. It functions in two ways:
Depletion mode and Enhancement mode.
Depletion: when there is no voltage on the gate, the channel shows its maximum conductance.
As the voltage on the gate is either positive or negative, the channel conductivity decrease.
Enhancement mode: when there is no voltage on the gate the device does not conduct. More
voltage on the gate, the better the device can conduct.
Working Principle of MOSFET:

The aim of the MOSFET is to be able to control the voltage and current flow between the
source and drain. It works almost as a switch. The working of MOSFET depends upon the MOS
capacitor. The MOS capacitor is the main part of MOSFET. The semiconductor surface at the
below oxide layer which is located between source and drain terminal. It can be inverted from p-
type to n-type by applying a positive or negative gate voltage respectively. When we apply the
positive gate voltage the holes present under the oxide layer with a repulsive force and holes are
pushed downward with the substrate. The depletion region populated by the bound negative
charges which are associated with the acceptor atoms. The electrons reach channel is formed.
The positive voltage also attracts electrons from the n+ source and drain regions into the channel.
Now, if a voltage is applied between the drain and source, the current flows freely between the
source and drain and the gate voltage controls the electrons in the channel. Instead of positive
voltage if we apply negative voltage, a hole channel will be formed under the oxide layer.
P-Channel MOSFET: has a P-channel region between source and drain. The flow of current is
positively charged holes. When we apply the negative gate voltage, the electrons present under
the oxide layer with are pushed downward into the substrate with a repulsive force
N-Channel MOSFET: has N-channel region between source and drain. If a voltage is applied
between the drain and source the current flows freely between the source and drain and the gate
voltage controls the electrons in the channel. Instead of positive voltage if we apply negative
voltage a hole channel will be formed under the oxide layer.
Figure 7.1: Mosfet circuit diagram

Ideal Graph:
PRECAUTIONS
 All connections should be right and tight.
 Readings should be taken properly.
 Scale on the graph should be taken correctly and carefully.
PROCEDURE
1. Connect the circuit as per given diagram properly.
2. Keep VGS constant at some value say 1.1 V by varying VGG.
3. Vary VDS in step of 1V up to 10 volts and measure the drain current ID.
4. Tabulate all the readings.
Output/Drain characteristics
VGS=1.1v VGS=1.2v VGS=1.3v VGS=1.4v VGS=1.5v
VDS(v) ID(mA) VDS(v) ID(mA) VDS(v) ID(mA) VDS(v) ID(mA) VDS(v) ID(mA)
0
1
2
3
4
5
10
5. Set the voltage VDS constant at 10 V.

6. Vary VGS by varying VGG in the step of 0.1 up to 1.55V and note down value of drain
current ID. Tabulate all the readings.
7. Plot the output characteristics VDS vs ID and transfer characteristics VGS vs ID. 5
Transfer characteristics
VDS=10v
VGS(V) ID(mA)
0
0.1
0.2
1
1.1
1.2
1.3
1.4
1.5
1.55
APPLICATIONS
 MOSFETs are used in digital integrated circuits, such as microprocessors.
 Used in calculators.
 Used in memories and in logic CMOS gates.
 Used as analog switches.
 Are also applied in audio-frequency power amplifier for public address systems
QUESTIONS
1. What are the advantages of MOSFET over JFET?
2. how much voltage is required to turn on a MOSFET?
3. Why an input characteristic of MOSFET is not drawn?

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Electronic Circuit Analysis and Design Laboratory Manual

COMPONENTS AND EQUIPMENT

Working Principle of MOSFET:

Figure 7.1: Mosfet circuit diagram

5. Set the voltage VDS constant at 10 V.

2. how much voltage is required to turn on a MOSFET?

3. Why an input characteristic of MOSFET is not drawn?

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