Tutorial 2 Solution Outline Q1 Ds B: T BS T DT D V V I
Tutorial 2 Solution Outline Q1 Ds B: T BS T DT D V V I
Q1
Ψ = ∫ B ⋅ ds
Let ds = âz ds (i.e. counter-clockwise)
Ψ = ∫ B ⋅ ds = BS = 40 cos(10 4 t ) ⋅ (20 × 10 −4 ) mWb
dΨ
Vemf = − = 0.8 sin (10 4 t ) V
dt
Vemf
I emf = = 0.2 sin (10 4 t ) A (counter-clockwise)
R
Q2
Ψ = ∫ B ⋅ ds
Assume B is in the direction âz , and let ds = âz ds (i.e. counter-clockwise)
Ψ = ∫ B ⋅ ds = BS = 0.2 cos(150πt ) ⋅ (10 × 10 −4 ) Wb
dΨ
Vemf = ∫ E ⋅ dl = −
dt
=> I (10 + 5) = 0.03π sin(150πt)
I = 0.002π sin(150πt) A
Q3
(a)
Ψ = ∫ B ⋅ ds
µ 0 i (t )
It can be shown* that B = aˆ φ
2πρ
dΨ
Vemf = − = 3.45 × 10 −3 sin (2π × 10 4 t ) V
dt
(b)
Iind = Vemf / (4+1) = 0.69 sin(2π×104t) mA (clockwise)
Imagine a circular loop C, of radius ρ, centered at and perpendicular to the long wire, as
shown below.
i(t)
∫ aˆ φ H (ρ , t ) ⋅ aˆ φ ρ dφ = i(t )
C
π 2
ρ H (ρ , t ) ∫ dφ = i (t ) (because the integration is independent of ρ)
0
i(t )
H (ρ , t ) = .
2πρ
i (t ) i (t )
Thus, H = aˆ φ and B = µ H = aˆ φ .
2πρ 2πρ
Q4a
Φ = ∫ B ⋅ ds
S
Q4b.
From Q4a,
Iemf = 3×10-5 ω sin(ωt) A
1 1
R dt = (3 × 10 −5 ) ω 2 = 0.45 ω 2 nW
2
P = ∫ I emf
2
T T 2
Q5a
Vemf = ∫ (u × B ) ⋅ dl
µ 0 i (t ) 15µ 0
It can be shown that B = aˆ φ = aˆ φ
2πρ 2πρ
Let dl = âρ dρ
15µ 0
⋅ (aˆ ρ dρ )
0.60
Vemf = ∫ 3aˆ z × aˆ φ
0.20 2πρ
0.60 45 µ
=∫ − 0
dρ
0.20 2πρ
45µ 0 0.60
=− ln
2π 0.20
= −9.888 µV
Q5b
Consider the following geometry
ρB B
40 20
ρA 45°
20
A
15µ 0
⋅ (aˆ ρ dρ + aˆ φ ρ dφ )
0.5596
Vemf = ∫ 3aˆ z × aˆ φ
0.2947
2πρ
0.5596 45µ 0
=∫ − dρ
0.2947 2πρ
45µ 0 0.5596
=− ln
2π 0.2947
= − 5.77 µV
u = âφ ρω
Let B = −âz 0.015 Wb/m2
Let dl = âρ dρ (i.e. disk edge at higher potential)
ρ2
Vemf = ∫
ρ1
[(aˆ φ ρω ) × (− aˆ z 0.015)]⋅ (aˆ ρ dρ )
ρ2
= ∫ − 0.015 ρωdρ
ρ1
= −0.0075 ω (ρ 22 − ρ12 )
It is required that
|Vemf| = 0.0075 ω (ρ22 - ρ12) = 5×10-3
Thus,
ρ1 = 2 cm (the smallest dimension allowed)
ρ2 = sqrt(5/(60×7.5) + 0.02) = 17.6 cm
Q7
Ψ = ∫ B ⋅ ds
dΨ
Vemf = − = 3 sin (10t ) − 0.06 cos(20t ) V
dt
Q8
J = aˆ r J r (r )
Also,
∂ρ v ∂
∇⋅J = − = − ( ρ 0 r cos ωt ) = ρ 0 rω sin ωt
∂t ∂t
1 ∂
Hence (rJ r ) = ρ 0 rω sin ωt
r ∂r
r r
∂
∫0 ∂r (rJ r )dr = ρ 0ω sin ωt ∫0 r dr
2
r3 r
rJ r | 0r = ( ρ 0ω sin ωt ) |0
3
ρ 0 ωr 2
J = aˆ r J r = aˆ r sin ωt (Am-2)
3
Q9
(a) R = d/(σA)
Ic = V/R = VσA/d
(b) E = V/d
∂D ∂E εA ∂V
Id = ⋅ A = εA =
∂t ∂t d ∂t
(c) The conduction current is directly proportional to V, a characteristic of resistors.
The displacement current varies as ∂V/∂t, a characteristic of capacitors. Hence,
the parallel plate capacitor can be modeled as a parallel combination of a resistor
R and a capacitor C, where
R = d/σA
C = εA/d
R C
0.005
(d) R= = 10Ω
2.5 × 2 × 10 −4
4 × 8.854 × 10 −12 × 2 × 10 −4
C= = 1.42 pF
0.005
Q10
Jc = σE
∂D ∂E
Jd = =ε
∂t ∂t
It is required that,
Jc σ
= = 10 .
Jd ωε
Thus,
4
f = = 99.9 MHz
2π × 10 × 72 × 8.854 × 10 −12