POWER TRANSISTORS

SANKEN ELECTRIC CO.,LTD. Bulletin No

T01EE0
( July,2001)
 C AU T I O N / WA R N I N G

• The information in this publication has been carefully checked and is believed to be
accurate; however, no responsibility is assumed for inaccuracies.
• Sanken reserves the right to make changes without further notice to any products herein in
the interest of improvements in the performance, reliability, or manufacturability
of its products. Before placing an order, Sanken advises its customers to obtain the
latest version of the relevant information to verify that the information being relied upon
is current.
• Application and operation examples described in this catalog are quoted for the sole
purpose of reference for the use of the products herein and Sanken can assume no
responsibility for any infringement of industrial property rights, intellectual property
rights or any other rights of Sanken or any third party which may result from its use.
• When using the products herein, the applicability and suitability of such products for the
intended purpose or object shall be reviewed at the users responsibility.
• Although Sanken undertakes to enhance the quality and reliability of its products, the
occurrence of failure and defect of semiconductor products at a certain rate is inevitable.
Users of Sanken products are requested to take, at their own risk, preventative measures
including safety design of the equipment or systems against any possible injury, death, fires
or damages to the society due to device failure or malfunction.
• Sanken products listed in this catalog are designed and intended for the use as components
in general purpose electronic equipment or apparatus (home appliances, office equipment,
telecommunication equipment, measuring equipment, etc.).
Before placing an order, the user’s written consent to the specifications is requested.
• When considering the use of Sanken products in the applications where higher reliability
is required (transportation equipment and its control systems, traffic signal control
systems or equipment, fire/crime alarm systems, various safety devices, etc.), please
contact your nearest Sanken sales representative to discuss and obtain written confirmation
of your specifications.
• The use of Sanken products without the written consent of Sanken in the applications
where extremely high reliability is required (aerospace equipment, nuclear power control
systems, life support systems, etc.) is strictly prohibited.
• Anti radioactive ray design is not considered for the products listed herein.
• This publication shall not be reproduced in whole or in part without prior written approval
from Sanken.
 Contents SANKEN POWER TRANSISTORS
Transistor Selection Guide..2 B1559............................47 C4138 ...........................91 C5333 .........................135
Reliability.........................6 B1560............................48 C4139 ...........................92 C5370 .........................136
Temperature Derating in B1570............................49 C4140 ...........................93 D1769 .........................137
Safe Operating Area.........9 B1587............................50 C4153 ...........................94 D1785 .........................138
Accessories.....................9 B1588............................51 C4296 ...........................95 D1796 .........................139
Switching Characteristics B1647............................52 C4297 ...........................96 D2014 .........................140
Test Circuit....................10 B1648............................53 C4298 ...........................97 D2015 .........................141
Symbols and Term...........10 B1649............................54 C4299 ...........................98 D2016 .........................142
A1186............................11 B1659............................55 C4300 ...........................99 D2017 .........................143
A1215............................12 B1685............................56 C4301 .........................100 D2045 .........................144
A1216............................13 B1686............................57 C4304 .........................101 D2081 .........................145
A1262............................14 B1687............................58 C4381/2 ......................102 D2082 .........................146
A1294............................15 C2023 ...........................59 C4388 .........................103 D2083 .........................147
A1295............................16 C2837 ...........................60 C4418 .........................104 D2141 .........................148
A1303............................17 C2921 ...........................61 C4434 .........................105 D2389 .........................149
A1386/A ........................18 C2922 ...........................62 C4445 .........................106 D2390 .........................150
A1488/A ........................19 C3179 ...........................63 C4466 .........................107 D2401 .........................151
A1492............................20 C3263 ...........................64 C4467 .........................108 D2438 .........................152
A1493............................21 C3264 ...........................65 C4468 .........................109 D2439 .........................153
A1494............................22 C3284 ...........................66 C4495 .........................110 D2557 .........................154
A1567............................23 C3519/A ........................67 C4511 .........................111 D2558 .........................155
A1568............................24 C3678 ...........................68 C4512 .........................112 D2560 .........................156
A1667/8.........................25 C3679 ...........................69 C4517/A......................113 D2561 .........................157
A1673............................26 C3680 ...........................70 C4518/A......................114 D2562 .........................158
A1693............................27 C3830 ...........................71 C4546 .........................115 D2589 .........................159
A1694............................28 C3831 ...........................72 C4557 .........................116 D2641 .........................160
A1695............................29 C3832 ...........................73 C4662 .........................117 D2642 .........................161
A1725............................30 C3833 ...........................74 C4706 .........................118 D2643 .........................162
A1726............................31 C3834 ...........................75 C4883/A......................119 SAH02 ........................163
A1746............................32 C3835 ...........................76 C4886 .........................120 SAH03 ........................164
A1859/A ........................33 C3851/A ........................77 C4907 .........................121 SAP09N ......................165
A1860............................34 C3852/A ........................78 C4908 .........................122 SAP09P ......................166
A1907............................35 C3856 ...........................79 C5002 .........................123 SAP10N ......................167
A1908............................36 C3857 ...........................80 C5003 .........................124 SAP10P ......................168
A1909............................37 C3858 ...........................81 C5071 .........................125 SAP16N ......................169
A2042............................38 C3890 ...........................82 C5099 .........................126 SAP16P ......................170
B1257............................39 C3927 ...........................83 C5100 .........................127 SAP Series
B1258............................40 C4020 ...........................84 C5101 .........................128 Application
Information................171
B1259............................41 C4024 ...........................85 C5124 .........................129
Discontinued Parts
B1351............................42 C4064 ...........................86 C5130 .........................130
Guide ........................176
B1352............................43 C4065 ...........................87 C5239 .........................131
B1382............................44 C4073 ...........................88 C5249 .........................132
B1383............................45 C4130 ...........................89 C5271 .........................133
B1420............................46 C4131 ...........................90 C5287 .........................134

1
 Transistor Selection Guide
■ VCEO-IC
800 C3678 C3679 C3680 C5124
C4020 C4300 C4301
C4299 C5002
C4304 C5003
C4445
C4908
600 C5249 C4706
550 C4517 C4518 C3927
C4517A C4518A C4557
C5239 C5287
500 C3830 C3831
C4907
400 C4073 C3832 C4138 C3833 C4139 C4140
C4418 C3890 C4296 C4297 C4298
C4662 C4130 C5071 C4434
C5130 C4546
380 D2141
300 C2023
C5333
250 D2017
230 A1294 A1295
C3263 C3264
200 A1668 D2016 C5271 A1493 A1494
C4382 D2557 C3857 C3858
D2558
180 A1859A A1386A A1216
C4883A A1492 C2922
A1673
C3519A
C3856
C4388
Collector–Emitter Voltage VCEO(V)

160 A1215
A1386
C2921
C3519
150 A1667 B1559 A1186 B1570 A1303 B1647 B1648
A1859 B1587 B1560 D2401 A1860 B1649 D2561
C4381 D2389 B1588 C3284 D2560
C4883 D2438 C2837 C4886 D2562
D2390
D2439
140 A1695
A1909
C4468
C5101
120 D2015 D1769 C3834 A1694 B1259 B1382 B1383
D1785 C3835 A1908 D2081 B1420 D2083
D2045 C4153 C4467 D2082
C5100
110 B1659
B1685
B1686
B1687
D2489
D2641
D2642
D2643
100 B1258
80 C3852A A1488A A1693
C3851A A1725
D2014 A1726
A1907
C4466
C4511
C4512
C5099
60 C3852 A1262 A1568
A1488 B1351
B1257 B1352
C3179 C4065
C3851
D1796
50 C4495 A2042 A1567 C4131
C4024 A1746
C4064
40 C5370
2 3 4 5 6 7 8 10 12 14 15 16 17 18 25

Collector Current IC(A)

2
 Transistor Selection Guide
■ Transistors for Switch Mode Power Supplies (for AC80 – 130V input)

MT-25 FM20 MT–100 FM100

VCBO(V) VCEO(V) IC (A)
(TO220) (TO220F) (TO3P) (TO3PF)
250 200 5 C5271
C4073
5 C4418
C4662
C3832 C3890
7
C4130
500 400 10 C4138 C4296
C3833 C4297
12
C5071
C4139 C4298
15
C4434
18 C4140
5 C5130
400
7 C4546
600 6 C3830 C4907
500
10 C3831
600 3 C5249

■ Transistors for Switch Mode Power Supplies (for AC180 – 280V input)

MT-25 FM20 MT–100 FM100

VCBO(V) VCEO(V) IC (A)
(TO220) (TO220F) (TO3P) (TO3PF)
3 C5239 C4517(A)
900 550 5 C4518(A) C5287
(1000) 10 C3927 C4557
600 14 C4706
C4020 C4908
3 C3678 C4299
900 800 C4304 C4445
5 C3679 C4300
7 C3680 C4301

3
 Transistor Selection Guide
Transistors for Audio Amplifiers
■ Single Transistors
● Single Emitter

Part No. PC(W) VCEO(V) IC (A) hFE(min) fT(MHz) Package

2SA1725/2SC4511 30 FM20 (TO220F)

2SA1726/2SC4512 50 MT-25 (TO220)

80 6
2SA1693/2SC4466 60 MT-100 (TO3P)

2SA1907/2SC5099 60
FM100 (TO3PF)
2SA1908/2SC5100 75
120 8
2SA1694/2SC4467 80 MT-100 (TO3P)
50 20
2SA1909/2SC5101 80 140 10
FM100 (TO3PF)
2SA1673/2SC4388 85 180 15

2SA1695/2SC4468 100 140 10

MT-100 (TO3P)
2SA1492/2SC3856 130 180 15

2SA1493/2SC3857 150 15
200 MT-200 (2-screw mount)
2SA1494/2SC3858 200 17

● LAPT (Multi emitter for High Frequency)

Part No. PC(W) VCEO(V) IC (A) hFE(min) fT(MHz) Package

2SA1860/2SC4886 80 14 50 FM100 (TO3PF)

2SA1186/2SC2837 100 150 10 60

2SA1303/2SC3284 125 14 50

2SA1386/2SC3519 130 160 MT-100 (TO3P)

40
50
2SA1386A/2SC3519A 130 180
15
2SA1294/2SC3263 130 230 35

2SA1215/2SC2921 150 160 50

2SA1216/2SC2922 200 180 40 MT-200 (2-screw mount)

17
2SA1295/2SC3264 200 230 35

● Transistors with built in temperature compensation diodes for audio amplifier

Part No. PC(W) VCEO(V) IC (A) hFE(min) Emitter Resistor(Ω)

SAP09P/SAP09N 80 150 10 5000 0.22

SAP10P/SAP10N 100 150 12 5000 0.22

SAP16P/SAP16N 150 160 15 5000 0.22

4
 Transistor Selection Guide
■ Darlington Transistors
Part No. PC(W) VCEO(V) IC (A) hFE(min) fT(MHz) Package
2SB1686 100
30 FM20 (TO220F)
2SD2642 60
2SB1659 100
50 MT-25 (TO220)
2SD2589 60
110 6
2SB1685 100
60 MT-100 (TO3P)
2SD2641 60
2SB1687 100
60
2SD2643 60
FM100 (TO3PF)
2SB1587 65
75 8
2SD2438 80
2SB1559 65
80 150 10 MT-100 (TO3P)
2SD2389 80
5000
2SB1588 50
80
2SD2439 55
15 FM100 (TO3PF)
2SB1649 45
85 200
2SD2562 70
2SB1560 50
100 10
2SD2390 55
150 MT-100 (TO3P)
2SB1647 45
130 15
2SD2560 70
2SB1570 50
150 12
2SD2401 55
150 MT-200 (2-screw mount)
2SB1648 45
200 17
2SD2561 70

■ Temperature compensation Transistors and Driver Transistors

Part No. PC(W) VCEO(V) IC (A) hFE(min) fT(MHz) Package Remarks

2SC4495 25 50 3 500 40 Temperature compensation

2SC4883 150 Driver, Complement 2SA1859

20 2 60 120 FM20
2SC4883A 180 (TO220F) Driver, Complement 2SA1859A

2SA1859 –150 Driver, Complement 2SC4883

20 –2 60 60
2SA1859A –180 Driver, Complement 2SC4883A

5
 Reliability
1. Definition of Reliability 4. Applications Considered on Reliability
The word reliablity is an abstract term which refers to the degree to a) The type and specifications of our transistors and semiconductor
which equipment or components, such as semiconductor devices, are devices vary depending on the application that will be required by
resistant to failure. Reliability can be and is often measured quantitatively. their intended use. Customer should, therefore, determine
Reliability is defined as “whether equipment or components (such as which type will best suit their purposes.
a semiconductor device) under given conditions perform the same at b) Note that high temperratures or long soldering periods must be avoid-
the end of a given period as at the beginning.” ed during soldering, as heat can be transmitted through external
leads into the interior. This may cause deterioration if the maximum
2. Reliability Function allowable temperature is exceeded.
In general, there are three types of failure modes in electronic com- c) When using the trasistor

Ma
ponents:

S ec
xA
under pulse operation or

ond
llo
1. Infant failure Max.Allowable

wa

ary wer
inductive load, the Safe

bl e
Current

Bre
Po
2. Random failure Operating Area (SOA) for

akd

Voltage Vceo(Max)
3. Wear-out failure

o
Collector Current Ic(A)

wn
the current and voltage must

Allowable
Loc

Max.
not be exceeded (Figure 2).

us
General Electronic
(a) Equipment or SOA(Safe Operating Area)
Components
(b)
Failure Rate (λ)

Semiconductor
Devices
Estimation
Collector-Emitter Voltage Vce(V)

Figure 2 SOA

Initial Random or Wear-out d) The reliability of transistors and semiconductor devices is greatly
Failure Chance Failure Failure
affected by the stress of junction temperature. If we accept in general
Time (t)
proceed in the form of Arrhenius equation, the relationship between
Figure 1 Bath Tub Curve the junction temperature Tj and lifespan L can be expressed with
These three types of failure describe “bathtub curve” shown in the following empirical formula
Figure 1. Infant failures can be attributed to trouble in the production n L = A+ B ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(4)
process and can be eliminated by aging befor shipment to customers, Tj
stricter control of the production process and quality control measures. It is, hence, very important to derate the junction temperature to
Semiconductor devices such as transistors, unlike electronic equipment, assure a high reliability rate.
take a considerable amount of time to reach the stage where wear-out
failure begins to occur. And, as shown in Figure 1 (b), they also last 5. Reliability Test
much longer than electronic equipment. This shows that the longer they Sanken bases its test methods and conditions on the following
are used the more stable they actually become. standards. Tests are conducted under these or stricter conditions,
The reduction that occurs in random failures can be approximated by The details of these are shown in Table 1.
Weibull distribution, logarithmic normal distribution, or gamma distri- • MIL-STD-202F (Test method for electrical and electronic com-
bution, but Weibull distribution best expresses the phenomenon that ponents)
occurs with transistors. • MIL-STD-750C (Test method for semiconductor equipment)
• JIS C 7021 (Endurance test and environmental test method for
3. Quantitative Expression of Reliability individual semiconductor devices)
While there are many ways to quantitatively express reliability, two • JIS C 7022 (Endurance test and environmental test method for
criteria, failure rate and life span, are generally used to define the integrated circuits of semiconductors)
reliability of semiconductors such as transistrors.
a) Failure Rate (FR) 6. Quality Assurance
Failure rate often refers to instantaneous failures or λ (t). In general To ensure high quality and high reliability, quality control and produc-
of reliability theory, however, the cumulative failure rate, or Relia- tion process control procedures are executed from the receipt of parts
bility Index, is through the entire production process. Our quality assurance system
r(t) is shown in Figure 3.
F⋅R= ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(1)
N⋅t
Where N = Net quantity used, and
r(t) = Net quantitiy failed after t hours
If we assign t the arbitrary

F ⋅ R = r × 100 (%/1,000 hours)⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(2)

N
In situations where the cumulative failure rate is small, failure is ex-
pressed in units of one Fit, 10-9 (failures/hours).
b) Life Span(L)
Life Span can be expressed in terms of average lifespan or as Mean
Time Between Failure (MTBF), but assuming that random failure
is shown by the Index Distribution [λ (t) = constant], then Life Span
or L can be shown by the equation
1
L = ⋅ (hours)⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(3)
F R

6
Reliability
Table 1: Test Methods and Conditions

Test Details of the Testing Method LTPD(%)

Collector dissipation with maximum junction temperature is applied continuously at

Continuous Operations Test *5/1000hrs
room temperature to judge lifespan and reliability under transistor operating conditions.
Power equal to that used in the Continuous Operations Test is applied intermittently 5/1000hrs
Intermittent Operation Test
to test the transistor’s lifespan and reliability under on and off conditions.
High Temperature Storage Test Confirms the highest storage temperature and operating temperature of transistors. 5/1000hrs
Low Temperature Storage Test Confirms the lowest storage temperature of transistors. 5/1000hrs

Tested at RH=85% and TA=85°C for the effects of the interaction between
Moisture Resistance Test temperature and humidity, and the effects of surface insulation between electrodes 5/1000hrs
and high temperature/high humidity.
Tested at Tstg min – Room temp. – Tstg max – Room temp. for 10 cycles (one cycle
Heat Cycle Test 30 min. –5 min. –30 min. –5 min.) to detect mechanical faults and characteristic 5
changes caused by thermal expansion and shrinkage of the transistor.
Tested at 100°C (5 min.), 25°C (within 3 sec.), 0°C (5 min.) for 10 cycles to check for
Heat Shock Test mechanical faults and characteristic changes caused by thermal expansion and 5
shrinkage of transistor.
Tested at 260 ± 5°C, 10 ± 1 sec, by dipping lead wire to 1.5mm from the seating plane
Soldering Heat Test in solder bath to check for characteristic changes caused by drastic temperature rises 5
of exterior lead wire.
Tested at amplitude 1.52mm, vibration frequency 10-55 Hz in directions of X, Y, Z, for
Vibrations Test 2 hours each (total 6 hours) to check for characteristic changes caused by vibration 5
during operation and transportion.
Tested by dropping 10 times from 75 cm height to check for mechanical endurance
Drop Test 5
and characteristic changes caused by shock during handling.
∗ Reliability Standard : 60%

Figure 3 Quality Assurance System

Material Purchasing

Incoming Inspection Physical and Chemical Inspection

Production Process Quality Control

Production Process Control
Specialized Tests for all units

Marking Periodical Quality Assurance Test

Packing 1. Operational Life (continuous) Test
2. Operational Life (intermittent) Test
3. High Temperature Storage Test
Shipping Inspection 4. Low Temperature Storage Test
5. Moisture Resistance Test
Shipment 6. Heat Cycle Test
7. Heat Shock Test
8. Soldering Heat Test
9. Vibaration Test
10. Drop Test

7
 Reliability
7. Notes Regarding Storage, Characteristic Tests, and Handling
Since reliability can be affected adversely by improper storage
environment and handling methods during Characteristic tests,
please observe the following cautions.
a) Cautions for Storage
1. Ensure that storage conditions comply with the standard
temperature (5 to 35°C) and the standard relative humidity
(arround 40 to 75%) and avoid storage locations that
experience extreme changes in temperature or humidity.
2. Avod locations where dust or harmful gases are present,
and avoid direct sunlight.
3. Reinspect for rust in leads and solderbility that have been
stored for a long time.
b) Cautions for Characteristic Tests and Handling
1. When characteristic tests are carried out during inspection
testing and other standard test periods, protect the transistor
from surges of power from the testing device, shorts between
the transistor and the heatsink
c) Silicone Grease
When using a heatsink, please coat the back surface of the
transistor and both surfaces of the insulating plate with a thin
layer of silicone grease to improve heat transfer between the
transistor and the heatsink.
Recommended Silicone Grease
• G-746 (Shin-Etsu Chemical)
• YG6260 (GE Toshiba Silicone)
• SC102 (Dow Corning Toray Silicone)
d) Torque when Tightening Screws
Thermal resistance increases when tightening torque is small,
and radiation effects are decreased. When the torque is too
high, the screw can cut, the heatsink can be deformed, and/or
distortion can arise in the product’s frame. To avoid these
problems, Table 2 shows the recommended tightening torques
for each product type.
Table 2. Screw Tightening Torques
Package Screw Tightening Torque
MT25 (TO-220) 0.490 to 0.686 N · m (5 to 7kgf · cm)
FM20 (TO-220 Full Mold) 0.490 to 0.686 N · m (5 to 7kgf · cm)
MT100 (TO-3P) 0.686 to 0.822 N · m (7 to 9kgf · cm)
FM100 (TO-3P Full Mold) 0.686 to 0.822 N · m (7 to 9kgf · cm)
MT200 ( two-point mount) 0.686 to 0.822 N · m (7 to 9kgf · cm)
2GR ( one-point mount) 0.686 to 0.822 N · m (7 to 9kgf · cm)

e) Soldering Temperature
In general, the transistor is subjected to high temperatures when
it is mounted on the printed circuit board, whether from flow solder
from a solderbath, or, in hand operations from a soldering iron.
The testing method and test conditions (JIS-C-7021 standards)
for a transistor’s heat resistance during soldering are:
At a distance of 1.5mm from the transistor’s main body,
apply 260°C for 10 seconds, and 350°C for 3 seconds.
However, please stay well within these limits and for as short
a time as possible during actual soldering.

8
 Reliability
■ Temperature Derating in Safe Operating Area
Flange (case) temperature is typically described as 25°C, but it must be derated subject to the operating
temperature.
This derating curve is determined by manufacturing conditions of devices, materials used etc. and in case of a
silicon transistor, breakdown voltage and DC Current Gain are significantly deteriorated in the temperature
range of 260°C to 360°C.
Hence, the collector current must be derated by using the derating curve in Fig.2 where the breakdown point is
set at 260°C.

Pc 100
lim
itin

Derating coefficient DF (%)

ga
Collector Current Ic (A)

re S/
a B
lim

Pc
itin
S/
B

Collector Current

lim
50 ar
lim

ea

itin
itin

ga
ga

rea
rea

Tc=25°C
0
0 50 100 150 200 250 300
Collector-Emitter Voltage VCE (V)
Case Temp Tc (°C)

Fig.1 Safe Operating Area Fig.2 Derating Curve of Safe Operating Area

Derating coefficient is obtained from temperature in Fig.2 and it must be applied to the current value of the safe
operating area in order to obtain the derated current.

■ Accessories
✩ Sanken Transistors do not include accessories. Accessories may be attached at a cost if requested.
✩ Sanken transistor case is a standard size, and can be used with any generally sold accessories.

• Insulater: Mica, with a thickness of 0.06mm, +0.045 –0.005 allowance • Insulation Bush for MT-25 (TO220)

Type Name:Mold(10)Mica Type Name:Mold(14)Mica Type Name:Mold(9)Mica

ø3.2 +0.1
–0
2–ø3.2 +0.1
–0

ø3.75 +0.1
–0
12.0±0.1
±0.1
10.0

6.0±0.2
3.7±0.1
+0.2
7.0

24.0±0.1
14.0±0.1

3.1
±0.1
–0
20.0

2.5±0.2 1.5±0.2
5.0±0.1
7.0 ±0.1
24.38±0.1
19.4±0.1 R0.5 +0.2
24.0 –0 R0.5 39.0±0.1 R0.5

9
 Switching Characteristics
■ Typical Switching Characteristics (Common Emitter)
VCC RL IC VB2 VBB1 VBB2 IB1 IB2 tr tstg tf
(V) (Ω) (A) (V) (V) (V) (A) (A) (µs) (µs) (µs)

■Switching Characteristics Test Circuit/Measurement Wave Forms

PNP +VBB2

IB2
0 IC –VCC Base
20µs Current 0 0
R2

IB1
IB2
D.U.T Collector
Current 0.1IC 0
50µs IB1

IC
0
0.9IC
R1
ton tstg tf
–VBB1 RL
GND 0

NPN +VBB1

IB2
0 IC VCC Base
50µs R1 Current 0 0

IB1
IB1
D.U.T Collector 0.9IC
Current 0
IB2

IC
0.1IC
0 R2
20µs ton tstg tf
–VBB2 RL
GND 0

Symbols
Symbol Item Definition
VCBO Collector-Base Voltage DC Voltage between Collector and Base when Emitter is open
VCEO Collector-Emitter Voltage Voltage between Collector and Emitter when Base is open and voltage is reversely applied to Collector junction
VEBO Emitter-Base Voltage DC voltage between Emitter and Base when Collector is open
IC Collector Current DC current passing through Collector electrode
IB Base Current DC current passing through Base electrode
PC Collector Power Dissipation Power consumed at Collector junction
Tj Operating Junction Temperature Maximum allowable temperature value at absolute maximum ratings
Tstg Storage Temperature Maximum allowable range of ambient temperature at non-operation
ICBO Collector Cutoff Current Collector current when Emitter is open and a specified reverse voltage is applied between Collector and Base
IEBO Emitter Cutoff Current Emitter current when Collector is open and a specified reverse voltage is applied between Emitter and Base
V(BR)CEO Collector-Emitter Saturation Voltage Breakdown voltage between Collector and Emitter when Base is open
hFE DC Current Gain Ratio of DC output current and DC input current at a specified voltage and current (Emitter common)
VCE(sat) Collector-Emitter Saturation Voltage DC voltage between Collector and Emitter under specified saturation conditions
VBE(sat) Base-Emitter Saturation Voltage DC voltage between Base and Emitter under specified saturation conditions
VFEC Emitter-Collector Diode Forward Voltage Diode forward voltage between Emitter and Collector when Base is open
fT Cut-off Frequency Frequency at the specified voltage and current where hFE is 1 (0dB)
Cob Collector Junction capacitance Junction capacitance between collector and Base at a specified voltage and frequency

• Ta=25°C unless otherwise specified.

10
 LAPT 2SA1186
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2837) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
15.6±0.4 4.8±0.2

5.0±0.2
µA

2.0

1.8
VCBO –150 V ICBO VCB=–150V –100max 9.6 2.0±0.1

VCEO –150 V IEBO VEB=–5V –100max µA

19.9±0.3
VEBO –5 V V(BR)CEO IC=–25mA –150min V

4.0
a
IC –10 A hFE VCE=–4V, IC=–3A 50min∗ ø3.2±0.1
b
IB –2 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V
PC 100(Ta=25°C) W fT VCE=–12V, IE=1A 60typ MHz 2

4.0max
20.0min
Tj 150 °C COB VCB=–80V, f=1MHz 110typ pF 3

Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1 0.65 +0.2
-0.1

5.45±0.1 5.45±0.1 1.4

■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g

(V) (Ω) (A) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
–60 12 –5 5 –500 500 0.25typ 0.8typ 0.2typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–4V)
–10 –3 –10
Collector-Emitter Saturation Voltage V C E (s at) (V )

A
A 60m
A

m –1
m

00
00

–2 mA
–4

–8 –120 –8

Collector Current I C (A)

A
– 0m
1 0
Collector Current I C (A)

–8 0m A –2
–6 –6
–60mA

I C =–10A

p)
–4 –40mA –4

)
p)
Tem

emp
Tem
–1

eT
se

se
(Ca

Cas
I B =–20m A

Ca
–2 –2

˚C

˚C (
C(
–5A
125

25˚

–30
0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 –2.0 0 –1 –2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a ( ˚ C/W)

(V C E =–4V) (V C E =–4V)
300 200 3

125˚C
DC C urrent G ain h FE
DC Curr ent Gain h FE

Transient Thermal Resistance

25˚C
Typ 100
100 1
–30˚C

50 0.5
50

20 30 0.2
–0.02 –0.1 –0.5 –1 –5 –10 –0.02 –0.1 –0.5 –1 –5 –10 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
80 –30 100
M aximum Power Dissip ation P C (W)
Cu t-of f Fr eque ncy f T ( MH Z )

–10
60
Collecto r Cur rent I C (A)

W
10

ith

yp
ms

In

T –5
fin

D
C
ite
he

40 50
at
si
nk

–1
20
Without Heatsink
–0.5 Natural Cooling

Without Heatsink
0 –0.2 3.5
0
0.02 0.1 1 10 –2 –10 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

11
 LAPT 2SA1215
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2921) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
Symbol Ratings Unit Symbol Conditions Ratings Unit
VCBO –160 V ICBO VCB=–160V –100max µA 36.4±0.3 6.0±0.2

24.4±0.2
VCEO –160 V IEBO VEB=–5V –100max µA 2-ø3.2±0.1 9
2.1

VEBO –5 V V(BR)CEO IC=–25mA –160min V

7
IC –15 A hFE VCE=–4V, IC=–5A 50min∗

21.4±0.3
a
IB –4 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V b
PC 150(Tc=25°C) W fT VCE=–12V, IE=2A 50typ MHz
2

4.0max
20.0min
Tj 150 °C COB VCB=–10V, f=1MHz 400typ pF
3
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
0.65 +0.2
-0.1
-0.1

5.45±0.1 5.45±0.1 3.0 +0.3

■Typical Switching Characteristics (Common Emitter)
-0.1

B C E
VCC RL IC VB2 IB1 IB2 ton tstg tf Weight : Approx 18.4g
(V) (Ω) (A) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
–60 12 –5 5 –500 500 0.25typ 0.85typ 0.2typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–4V)
–16 –3 –15
Collector-Emitter Saturation Voltage V C E (s at) (V )

A A A A
m 0m 0m 0m A
50 –60 –50 –40 –30
0m
–7
mA
–200

Collector Current I C (A)

–12
Collector Current I C (A)

–1 50 m A –2 –10

–10 0mA
–8

p)

mp)
emp
em
eT

e Te
se T
–50mA –1 –5

Cas
I C =–10A

Cas
(Ca
–4

˚C (

˚C (
25˚C
125
I B =–20mA –5A

–30
0 0 0
0 –1 –2 –3 –4 0 –0.2 –0.4 –0.6 –0.8 –1.0 0 –1 –2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =–4V) (V C E =–4V)
200 200 2
125˚C
DC Curr ent Gain h FE

DC Curr ent Gain h FE

Transient Thermal Resistance

1
100 Typ
100 25˚C

0.5
50 –30˚C

50

10 30 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –15 –0.02 –0.1 –0.5 –1 –5 –10 –15 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
80 –40 160
Ma xim um Powe r Dissipat io n P C (W)
10
Cut- off F req uency f T ( MH Z )

60 120
s

–10
Collector Curr ent I C (A)

D
p C
ith

Ty
In

–5
fin
ite

40 80
he
at
si
nk

–1
20 40
Without Heatsink
–0.5 Natural Cooling

Without Heatsink
5
0 –0.2 0
0.02 0.1 1 10 –2 –10 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

12
 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2922)
LAPT 2SA1216
Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
Symbol Ratings Unit SymboI Conditions Ratings Unit
36.4±0.3 6.0±0.2
VCBO –180 V VCBO VCB=–180V –100max µA
24.4±0.2 2.1
VCEO –180 V IEBO VEB=–5V –100max µA 2-ø3.2±0.1 9

VEBO –5 V V(BR)CEO IC=–25mA –180min V

7
30min∗

21.4±0.3
IC –17 A hFE VCE=–4V, IC=–8A a
IB –5 A VCE(sat) IC=–8A, IB=–0.8A –2.0max V b

PC 200(Tc=25°C) W fT VCE=–12V, IE=2A 40typ MHz 2

4.0max
20.0min
Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF 3
0.65 +0.2
Tstg –55 to +150 °C ∗hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180) 1.05 +0.2
-0.1
-0.1

5.45±0.1 5.45±0.1 3.0 +0.3

-0.1

■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VB2 IB1 IB2 ton tstg tf Weight : Approx 18.4g
(V) (Ω) (A) (V) (A) (A) (µs) (µs) (µs) a. Part No.
–40 4 –10 5 –1 1 0.3typ 0.7typ 0.2typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sa t ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–4V)
–17 –3 –17
Collector-Emitter Saturation Voltage V C E (s at) (V )
5A

A mA
A

m 0
–40
m
–1

00
–1.

00

–15 –7 –15
–5

A
–3 00 m

Collector Current I C (A)

Collector Current I C (A)

–2 00 mA –2
–10 –10
–150mA

p)
em
p)

)
emp
e T
–100mA

Tem
Cas

e T
–1

ase
–5 –5

˚C(

Cas
C(C
–50mA

125

˚C(
I C =–10A

25˚

–30
I B =–20mA
–5A

0 0 0
0 –1 –2 –3 –4 0 –0.2 –0.4 –0.6 –0.8 –1.0 0 –1 –2 –2.4
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚ C/W)

(V C E =–4V) (V C E =–4V)
300 200 2

125˚C
DC Cur rent Gain h F E
DC Curr ent Gain h F E

100 1
Transient Thermal Resistance

25˚C
100
Typ
–30˚C
50 0.5
50

10 10 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –17 –0.02 –0.1 –0.5 –1 –5 –10 –17 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
60 –50 200
M aximum Power Dissipa ti on P C (W)
10

160
m
Cu t-off Fre quen cy f T (MH Z )

DC
–10
ith
Collect or Cur ren t I C (A)

T yp
40
In
fin

–5 120
ite
he
at
si
nk

80
20
–1

Without Heatsink 40
–0.5
Natural Cooling
Without Heatsink
5
0 –0.2 0
0.02 0.1 1 10 –2 –10 –100 –300 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

13
 2SA1262
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3179) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-25(TO220)
Symbol Ratings Unit Symbol Conditions Ratings Unit
10.2±0.2 4.8±0.2

3.0±0.2
VCBO –60 V ICBO VCB=–60V –100max µA 2.0±0.1

VCEO –60 V IEBO VEB=–6V –100max µA

VEBO –6 V V(BR)CEO IC=–25mA –60min V

16.0±0.7
IC A hFE VCE=–4V, IC=–1A 40min

8.8±0.2
a ø3.75±0.2
–4
–0.6max V b
IB –1 A VCE(sat) IC=–2A, IB=–0.2A
PC 30(Tc=25°C) W fT VCE=–12V, IE=0.2A 15typ MHz 1.35

4.0max
12.0min
Tj 150 °C COB VCB=–10V, f=1MHz 90typ pF
Tstg –55 to +150 °C 0.65 +0.2
-0.1

■Typical Switching Characteristics (Common Emitter) 2.5

B C E
2.5 1.4

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.6g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
–20 10 –2 –10 5 –200 200 0.25typ 0.75typ 0.25typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )

–4 –1.5 –4
A A
0m –60m
–50m A
–8

–40m A

Collector Current I C (A)

–3 –3
Collector Current I C (A)

–30mA –1.0

–2 –20mA –2

)
emp

p)
mp)
e Tem
eT

e Te
Cas
–0.5

(Cas
(Cas
–10mA

˚C (
–1 –1

125

–30˚C
25˚C
I C =–3A
I B =–5mA
–2A
–1A

0 0 0
0 –1 –2 –3 –4 –5 –6 –0.1 –0.5 –0.1 –0.5 –1 0 –0.5 –1.0 –1.5
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚ C/W)

(V C E =–4V) (V C E =–4V)
500 200 5
125˚C
D C Cur r ent Gai n h F E
DC Curr ent Gain h F E

Transient Thermal Resistance

100 25˚C
Typ
–30˚C
100
50
50
1

20 20 0.7
–0.01 –0.1 –0.5 –1 –4 –0.02 –0.1 –1 –4 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
60 –10 30
1m

–5
M aximum Po wer Dissipat io n P C (W)

50
s
10
m
Cut- off F req uency f T (M H Z )

10

W
0m

ith
Collector Cur rent I C (A)

D
s

40 C 20
In

Typ
fin
ite
he

30 –1
at
si
nk

–0.5 Without Heatsink

20 10
Natural Cooling

10
Without Heatsink
2
0 –0.1
0
0.005 0.01 0.05 0.1 0.5 1 3 –2 –5 –10 –50 –100 0 25 50 75 100 125 150
Emitter C urrent I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

14
 LAPT 2SA1294
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3263) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
15.6±0.4 4.8±0.2

5.0±0.2
µA

2.0

1.8
VCBO –230 V ICBO VCB=–230V –100max 9.6 2.0±0.1

VCEO –230 V IEBO VEB=–5V –100max µA

VEBO V V(BR)CEO

19.9±0.3
–5 IC=–25mA –230min V

4.0
a
IC –15 A hFE VCE=–4V, IC=–5A 50min∗ ø3.2±0.1
b
IB –4 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V
PC 130(Tc=25°C) W fT VCE=–12V, IE=2A 35typ MHz 2

4.0max
20.0min
Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF 3

Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), Y(70 to 140) 1.05 +0.2
-0.1 0.65 +0.2
-0.1

5.45±0.1 5.45±0.1 1.4

■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
–60 12 –5 –10 5 –500 500 0.35typ 1.50typ 0.30typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–4V)
Collector-Emitter Saturation Voltage V C E (sa t) (V )

–15 – 3 –15
5A
A
.0A

. .0 A
.0

–1 –1
–2

mA
–3

00
–5

Collector Current I C (A)

A
0m
–30
Collector Current I C (A)

–10 mA –2 –10
– 200

–1 00 mA

)
mp

mp)
)
emp
eTe

eTe
–5 –1 –5

seT
Cas
–50mA I C =–10A

Cas
(Ca
˚C (

˚C (
125
25˚C

–30
I B =–20mA
–5A

0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 –2.0 0 –1 –2 –2.5
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚ C/W)

(V C E =–4V) (V C E =–4V)
200 200 3
125˚C
DC C urrent G ain h FE

DC C urrent G ain h FE

Transient Thermal Resistance

100 Typ 100 25˚C

1

50 50 –30˚C
0.5

10 10 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –15 –0.02 –0.1 –0.5 –1 –5 –10 –15 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
60 –40 130
10
m
s
Ma ximum Po we r Dissipa ti on P C (W)

–10
100
Cut-o ff F requ ency f T (MH Z )

DC
W
ith
Collector Curr ent I C (A)

–5
40
In

p
fin

Ty
ite
he
at
si

–1
nk

50
20 –0.5

Without Heatsink
Natural Cooling

–0.1
Without Heatsink
3.5
0 –0.05 0
0.02 0.1 1 10 –3 –10 –100 –300 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

15
 LAPT 2SA1295
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3264) Application : Audio and General

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
Symbol Ratings Unit Symbol Conditions Ratings Unit
µA 36.4±0.3 6.0±0.2
VCBO –230 V ICBO VCB=–230V –100max
24.4±0.2
VCEO –230 V IEBO VEB=–5V –100max µA 2-ø3.2±0.1 9
2.1

VEBO –5 V V(BR)CEO IC=–25mA –230min V

7
IC A hFE VCE=–4V, IC=–5A 50min∗

21.4±0.3
–17 a
IB –5 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V b
PC 200(Tc=25°C) W fT VCE=–12V, IE=2A 35typ MHz
2

4.0max
20.0min
Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF
3
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), Y(70 to 140) 1.05 +0.2
-0.1
0.65 +0.2
-0.1

5.45±0.1 5.45±0.1 3.0 +0.3

-0.1

■Typical Switching Characteristics (Common Emitter)

B C E
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 18.4g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
–60 12 –5 –10 5 –500 500 0.35typ 1.50typ 0.30typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )

–17 – 3 –17
0A A
A

. .5 A
–1
.0

–2 – 1.0
–3

–15 –15

0 mA
–50

Collector Current I C (A)

Collector Current I C (A)

0mA
–30 –2
–10 mA –10
–200

p)

mp)
em
–1 00 mA

eT

e Te
–1

Cas
–5 I C =–10A –5

Cas
–50mA
˚C (

˚C (
125
25˚C

–30
I B =–20mA –5A

0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 –2.0 0 –0.8 –1.6 –2.4 –3.2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =–4V) (V C E =–4V)
200 200 2
125˚C
DC Cur rent Gain h FE
DC Cur rent Gain h F E

Transient Thermal Resistance

100 Typ 100 25˚C 1

50 50 –30˚C 0.5

10 10 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –17 –0.02 –0.1 –0.5 –1 –5 –10 –17 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
60 –40 200

10
m
s
M aximum Power Dissipa ti on P C (W)

–10 D 160
C
Cu t-of f Fr eque ncy f T ( MH Z )

–5
ith
Collect or Cur ren t I C (A)

40
In

p
fin

Ty 120
ite
he
at

–1
si
nk

–0.5 80
20
Without Heatsink
Natural Cooling
40
–0.1

Without Heatsink
5
0 –0.05 0
0.02 0.1 1 10 –3 –10 –100 –300 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

16
 LAPT 2SA1303
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3284) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
15.6±0.4 4.8±0.2

5.0±0.2
2.0

1.8
VCBO –150 V ICBO VCB=–150V –100max µA 9.6 2.0±0.1

VCEO –150 V IEBO VEB=–5V –100max µA

19.9±0.3
VEBO –5 V V(BR)CEO IC=–25mA –150min V

4.0
a ø3.2±0.1
IC –14 A hFE VCE=–4V, IC=–5A 50min
b
IB –3 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V
PC 125(Tc=25°C) W fT VCE=–12V, IE=2A 50typ MHz 2

4.0max
20.0min
Tj 150 °C COB VCB=–10V, f=1MHz 400typ pF 3

Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1 0.65 +0.2
-0.1

5.45±0.1 5.45±0.1 1.4

■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
–60 12 –5 –10 5 –500 500 0.25typ 0.85typ 0.2typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sa t ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )

–3 –14
A A
A
–6 mA

m m mA
m

00 00 00
00

–3
00

–5 –4 mA
–200
–7

–12

Collector Current I C (A)

–1 50 m A
Collector Current I C (A)

–10
–2
–10 0mA
–8

p)
Tem

)
emp
p)
se
Tem

eT
(Ca
–50mA –5

Cas
–1

ase
˚C
I C =–10A

˚C (
–4

125

C (C

–30
25˚
I B =–20mA –5A

0 0 0
0 –1 –2 –3 –4 0 –0.2 –0.4 –0.6 –0.8 –1.0 0 –1 –2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =–4V) (V C E =–4V)
200 200 3

125˚C
DC Cur rent Gain h FE

DC Cur rent Gain h FE

Transient Thermal Resistance

100 Typ 25˚C 1

100

–30˚C 0.5
50

50

20 30 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –14 –0.02 –0.1 –0.5 –1 –5 –10 –14 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
80 –40 130
1m

Maxim um Power Dissip ation P C (W)

10

s
10

60 100
0m
Cut- off F req uency f T (MH Z )

–10
W
Co lle ctor Cu rr ent I C (A)

ith

D
C
p
In

Ty
fin

–5
ite
he

40
at
si
nk

50
–1
20 Without Heatsink
Natural Cooling
–0.5

Without Heatsink
3.5
0 –0.2 0
0.02 0.1 1 10 –3 –10 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

17
 LAPT 2SA1386/1386A
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519/A) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Ratings Ratings
Symbol Unit Symbol Conditions Unit 4.8±0.2
2SA1386 2SA1386A 2SA1386 2SA1386A 15.6±0.4

5.0±0.2
2.0

1.8
9.6 2.0±0.1
VCBO –160 –180 V –100max –100max µA
ICBO
VCEO –160 –180 V VCB= –160 –180 V

19.9±0.3
µA

4.0
VEBO –5 V IEBO VEB=–5V –100max a ø3.2±0.1

IC –15 A V(BR)CEO IC=–25mA –160min –180min V b

IB –4 A hFE VCE=–4V, IC=–5A 50min∗

2

4.0max
VCE(sat)

20.0min
PC 130(Tc=25°C) W IC=–5A, IB=–0.5A –2.0max V
3
Tj 150 °C fT VCE=–12V, IE=2A 40typ MHz
1.05 +0.2
-0.1 0.65 +0.2
-0.1
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 500typ pF
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 5.45±0.1 5.45±0.1 1.4
■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
–40 4 –10 –10 5 –1 1 0.3typ 0.7typ 0.2typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sa t ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )

–15 –3 –15
A A
m m –3 00 m A
A

0
00 40
m

–5 –
00
–7

Collector Current I C (A)

–200mA
Collector Current I C (A)

–10 –2 –10
–150mA

–100mA

p)
mp)

mp)
em
e Te
eT

e Te
–5 –1 –5

Cas

(Cas

(Cas
–50mA

˚C (

25˚C

–30˚C
I C =–10A
I B =–20mA 125
–5A

0 0 0
0 –1 –2 –3 –4 0 –0.2 –0.4 –0.6 –0.8 –1.0 0 –1 –2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚C /W )

(V C E =–4V) (V C E =–4V)
300 200 3
DC Curr ent Gain h FE

DC Curr ent Gain h FE

Transient Thermal Resistance

125˚C
100
1
100 25˚C
Typ
–30˚C 0.5
50

10 20 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –15 –0.02 –0.1 –0.5 –1 –5 –10 –15 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
60 –40 130
10
ms
Ma xim um Powe r Dissipation P C ( W)

–10 DC
100
Cut-o ff Fr eque ncy f T (MH Z )

–5
ith
Collecto r Cur ren t I C ( A)

p
40 Ty
In
fin
ite
he
at

–1
si
nk

Without Heatsink
–0.5 Natural Cooling 50
20
1.2SA1386
2.2SA1386A
–0.1

1 Without Heatsink
2 3.5
0 –0.05 0
0.02 0.1 1 10 –3 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

18
 2SA1488/1488A
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3851/A) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20 (TO220F)
Ratings Ratings
Symbol Unit Symbol Conditions Unit 4.2±0.2
2SA1488 2SA1488A 10.1±0.2

4.0±0.2
2SA1488 2SA1488A 2.8 c0.5
VCBO –60 –80 V –100max –100max µA
ICBO

8.4±0.2
VCEO –60 –80 V VCB= –60 –80 V

16.9±0.3
VEBO –6 V IEBO VEB=–6V –100max µA ø3.3±0.2
a
IC –4 V(BR)CEO IC=–25mA

0.8±0.2
A –60min –80min V b

IB –1 A hFE VCE=–4V, IC=–1A 40min

±0.2
3.9
PC 25(Tc=25°C) W VCE(sat) IC=–2A, IB=–0.2A –0.5max V

13.0min
1.35±0.15
Tj 150 °C fT VCE=–12V, IE=0.2A 15typ MHz
1.35±0.15
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 90typ pF 0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
B C E
–12 6 –2 –10 5 –200 200 0.25typ 0.75typ 0.25typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–4V)
Collector-Emitter Saturation Voltage V C E (sa t) (V )

–4 –1.5 –4
A A
0m –60m
–50m A
–8

–40m A

Collector Current I C (A)

–3 –3
Collector Current I C (A)

–30mA –1.0

–2 –20mA –2

)
emp

p)
mp)
e Tem
eT

e Te
Cas
–0.5

(Cas
(Cas
–10mA

˚C (
–1 –1

–30˚C
125

25˚C
I C =–3A
I B =–5mA
–2A
–1A

0 0 0
0 –1 –2 –3 –4 –5 –6 –0.1 –0.5 –0.1 –0.5 –1 0 –0.5 –1.0 –1.5
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚ C/W)

(V C E =–4V) (V C E =–4V)
500 200 5
125˚C
Transient Thermal Resistance
DC Curr ent Gain h FE
DC C urrent G ain h FE

100 25˚C
Typ
–30˚C
100
50
50
1

20 20 0.7
–0.01 –0.1 –0.5 –1 –4 –0.02 –0.1 –1 –4 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
60 –10 30
Natural Cooling
1m Silicone Grease
–5 100ms s Heatsink: Aluminum
M aximu m Power Dissi pation P C (W)

50 10
m in mm
s
Cu t-off Fre quen cy f T ( MH Z )

Collect or Cur ren t I C (A)

40 DC 20
Typ W
ith
–1 In
fin
30 ite
150x150x2
–0.5 he
1 00x 1 0 at
Without Heatsink 0x si
20 2 nk
Natural Cooling 10

50x50x2
10
–0.1
Without Heatsink
2
0 –0.05
0
0.005 0.01 0.05 0.1 0.5 1 3 3 5 10 50 100 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

19
 2SA1492
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3856) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
15.6±0.4 4.8±0.2

5.0±0.2
2.0

1.8
VCBO –180 V ICBO VCB=–180V –100max µA 9.6 2.0±0.1

VCEO –180 V IEBO VEB=–6V –100max µA

19.9±0.3
VEBO –6 V V(BR)CEO IC=–50mA –180min V

4.0
a
50min∗
ø3.2±0.1
IC –15 A hFE VCE=–4V, IC=–3A
b
IB –4 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V
PC 130(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 2

4.0max
20.0min
Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF 3

Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1 0.65 +0.2
-0.1

5.45±0.1 5.45±0.1 1.4

■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
–40 4 –10 –10 5 –1 1 0.6typ 0.9typ 0.2typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–4V)
Collector-Emitter Saturation Voltage V C E (sa t) (V )

–15 – 3 –15
6A
–0.
A
–1

4A
–0.

Collector Current I C (A)

A
– 0 .2
Collector Current I C (A)

–10 –2 –10

–0 .1 A

mp)

Temp)
Temp
e Te
–5 –50mA –1 –5

Cas

(Case

(Case
˚C (

25˚C

–30˚C
I B =–20mA I C =–10A 125
–5A

0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 –2.0 0 –1 –2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚C/W)

(V C E =–4V) (V C E =–4V)
300 200 3
125˚C
DC Curr ent Gain h FE
DC Curr ent Gain h FE

25˚C
Transient Thermal Resistance

Typ
100
–30˚C 1
100

0.5
50
50

10 20 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –15 –0.02 –0.1 –0.5 –1 –5 –10 –15 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
30 –40 130
3m
s
10
M aximum Power Dissipa ti on P C ( W)

m
10 s
–10 0m 100
Cut- off F re quen cy f T (MH Z )

s
W

Typ
ith
Collector Cur rent I C (A)

D
In

–5 C
fin

20
ite
he
at
si
nk

–1 50
10
–0.5
Without Heatsink
Natural Cooling

Without Heatsink
3.5
0 –0.1 0
0.02 0.1 1 10 –3 –10 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

20
 2SA1493
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3857) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
Symbol Ratings Unit Symbol Conditions Ratings Unit
36.4±0.3 6.0±0.2
VCBO –200 V ICBO VCB=–200V –100max µA 24.4±0.2 2.1
VCEO –200 V IEBO VEB=–6V –100max µA 2-ø3.2±0.1 9

VEBO –6 V V(BR)CEO IC=–50mA –200min V

7
21.4±0.3
IC –15 A hFE VCE=–4V, IC=–5A 50min∗ a
IB –5 VCE(sat) IC=–10A, IB=–1A – 3.0max V b
A
PC 150(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 2

4.0max
20.0min
Tj 150 °C COB VCB=–10V, f=1MHz 400typ pF 3
0.65 +0.2
-0.1
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
1.05 +0.2
-0.1

5.45±0.1 5.45±0.1 3.0 +0.3

-0.1

■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 18.4g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
–60 12 –5 –10 5 –500 500 0.3typ 0.9typ 0.2typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sa t ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )

–15 –3 –15
A mA
5A

–1 60
0
– mA
–1.

–400

Collector Current I C (A)

A
–200m
Collector Current I C (A)

–10 –2 –10

–1 00 mA

mp)
)

emp)
I B =–5 0m A

Temp
eTe
–5 –1 –5

(CaseT
Cas

(Case
I C =–15A

˚C (

25˚C

–30˚C
–10A 125
–5A

0 0 0
0 –1 –2 –3 –4 0 –1 –2 –3 –4 0 –1 –2
Collector-Emi tter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a (˚C /W )

(V C E =–4V) (V C E =–4V)
300 200 2
125˚C
DC C urrent G ain h FE
DC C urrent G ain h FE

25˚C 1
Transient Thermal Resistance

Typ 100
–30˚C
100
0.5
50
50

10 20 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –15 –0.02 –0.1 –0.5 –1 –5 –10 –15 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
30 –50 160
3m
20 s 10ms
m
s
Maximu m Power Dissip ation P C (W)

Typ
D 10
C
Cut- off F re quen cy f T ( MH Z )

–10 0m 120
W
Co lle ctor Cu rr ent I C ( A)

s
ith

20
In

–5
fin
ite
he

80
at
si
nk

–1
10
–0.5 Without Heatsink 40
Natural Cooling

Without Heatsink
5
0 –0.1 0
0.02 0.1 1 10 –2 –10 –100 –300 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

21
 2SA1494
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3858) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
Symbol Ratings Unit Symbol Conditions Ratings Unit
µA 36.4±0.3 6.0±0.2
VCBO –200 V ICBO VCB=–200V –100max
24.4±0.2
VCEO –200 V IEBO VEB=–6V –100max µA 2-ø3.2±0.1 9
2.1

VEBO –6 V V(BR)CEO IC=–50mA –200min V

7
IC hFE VCE=–4V, IC=–8A 50min∗

21.4±0.3
–17 A a
IB –5 A VCE(sat) IC=–10A, IB=–1A –2.5max V b
PC 200(Tc=25°C) W fT VCE=–12V, IE=1A 20typ MHz
2

4.0max
20.0min
Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF
3
Tstg –55 to +150 °C ∗hFE Rank Y(50 to 100), P(70 to 140), G(90 to 180) 1.05 +0.2
-0.1
0.65 +0.2
-0.1

5.45±0.1 5.45±0.1 3.0 +0.3

-0.1
■Typical Switching Characteristics (Common Emitter)
B C E
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 18.4g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
–40 4 –10 –10 5 –1 1 0.6typ 0.9typ 0.2typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–4V)
–17 –3 –17
–1A
Collector-Emitter Saturation Voltage V C E (s at) (V )
A

mA
.5

0
–60
–1

–15 –15
0mA
–40

Collector Current I C (A)

Collector Current I C (A)

A –2
–200m
–10 –10

–1 00 m A

mp)

)
Temp
)
e Te
Temp
–1

(Case
(Cas
–5 –50mA –5

(Case
I C =–15A

125˚C

–30˚C
25˚C
I B =–20mA –10A
–5A

0 0 0
0 –1 –2 –3 –4 0 –1 –2 –3 0 –1 –2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚C /W)

(V C E =–4V) (V C E =–4V)
300 200 2
125˚C
DC Curr ent Gain h FE
DC Curr ent Gain h FE

Typ 25˚C 1
Transient Thermal Resistance

100
100
–30˚C
0.5
50
50

10 20 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –17 –0.02 –0.1 –0.5 –1 –5 –10 –17 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
30 –50 200
20 3m
m s
s 10ms
Ma xim um Powe r Dissipat io n P C (W)

160
10

Typ
Cut- off Fr equ ency f T (MH Z )

0m

–10
W

D
ith
Collector Curr ent I C (A)

C
20
In

–5
fin

120
ite
he
at
si
nk

80
–1
10

–0.5 Without Heatsink

Natural Cooling 40

Without Heatsink
5
0 –0.1 0
0.02 0.1 1 10 –2 –10 –100 –300 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

22
 LOW VCE (sat) 2SA1567
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4064) Application : DC Motor Driver, Chopper Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20 (TO220F)
Symbol Ratings Unit Symbol Conditions Ratings Unit 4.2±0.2
10.1±0.2

4.0±0.2
2.8 c0.5
VCBO –50 V ICBO VCB=–50V –100max µA
VCEO –50 V IEBO VEB=–6V –100max µA

8.4±0.2
16.9±0.3
VEBO –6 V V(BR)CEO IC=–25mA –50min V
ø3.3±0.2
a
IC –12 A hFE VCE=–1V, IC=–6A 50min

0.8±0.2
b
IB –3 A VCE(sat) IC=–6A, IB=–0.3A –0.35max V
40typ MHz

±0.2
3.9
PC 35(Tc=25°C) W fT VCE=–12V, IE=0.5A

13.0min
Tj 150 °C COB VCB=–10V, f=1MHz 330typ pF 1.35±0.15

1.35±0.15
Tstg –55 to +150 °C
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
B C E
–24 4 –6 –10 5 –120 120 0.4typ 0.4typ 0.2typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–1V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )

–12 –1.5 –12

A
mA

0m
–15
00

–10 0m A
–2

–10 –10
I B=

Collector Current I C (A)

Collector Current I C (A)

–8 –1.0 –8
–60mA
I C= –
12A
–9A

–6 –40mA –6
–6A

mp)
p)

mp)
–3A

Tem
–1A

e Te
e Te
se
–4 –20mA –0.5 –4

(Cas
(Cas
(Ca
˚C

–30˚C
25˚C
–10mA

125
–2 –2
–5mA

0 0 0
0 –1 –2 –3 –4 –5 –6 –2 –10 –100 –1000 –3000 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a (˚ C/W)

(V C E =–1V) (V C E =–1V)
500 500 4
125˚C

Typ
D C Cur r ent Gai n h F E
DC Curr ent Gain h F E

25˚C
Transient Thermal Resistance

–30˚C

100 100 1

50 50 0.5

30 30 0.3
–0.02 –0.1 –1 –10 –0.02 –0.1 –1 –10 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
50 –30 35

1m Natural Cooling
s Silicone Grease
30
Maximu m Power Dissi pation P C (W)

–10 Heatsink: Aluminum

10

10
m

Typ 0m in mm
Cut- off Fr equ ency f T (M H Z )

40 s
–5 DC
Collector Cur rent I C (A)

W
ith

20
In
fin

30
ite

–1
he

150x150x2
at

–0.5
si
nk

Without Heatsink 100x100x2

Natural Cooling 10
20
50x50x2
–0.1
Without Heatsink
2
0 –0.05
0
0.05 0.1 1 12 –3 –5 –10 –50 –100 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

23
 E
( 250 Ω )

Built-in Diode at C–E

Low VCE (sat) 2SA1568 B

Equivalent
curcuit C

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4065) Application : DC Motor Driver, Chopper Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20 (TO220F)
Symbol Ratings Unit Symbol Conditions Ratings Unit
10.1±0.2 4.2±0.2

4.0±0.2
VCBO –60 V ICBO VCB=–60V –100max µA 2.8 c0.5

VCEO –60 V IEBO VEB=–6V –60max mA

8.4±0.2
16.9±0.3
VEBO –6 V V(BR)CEO IC=–25mA –60min V
ø3.3±0.2
IC –12
+ A hFE VCE=–1V, IC=–6A 50min a

0.8±0.2
b
IB –3 A VCE(sat) IC=–6A, IB=–0.3A –0.35max V
PC 35(Tc=25°C) W VFEC IECO=–10A –2.5max V

±0.2
3.9
13.0min
Tj 150 °C fT VCE=–12V, IE=0.5A 40typ MHz 1.35±0.15

Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 330typ pF 1.35±0.15

0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
B C E
–24 4 –6 –10 5 –120 120 0.4typ 0.4typ 0.2typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–1V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )

–12 –1.4 –12

0mA
–15
mA
00

–10 –1 00 mA –10
–2
I B=

Collector Current I C (A)

Collector Current I C (A)

–1.0
I C=

–8 –8
–60mA
–12
A
–9A

–6 –40mA –6
–6A

mp)
p)

mp)
Tem
–3 A

e Te
e Te
–0.5

se
–4 –4
–1A

(Cas
(Cas
(Ca
–20mA

˚C

–30˚C
25˚C
125
–2 –10mA –2

0 0 0
0 –1 –2 –3 –4 –5 –6 –7 –10 –100 –1000 –3000 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚C /W)

(V C E =–1V) (V C E =–1V)
300 300 4
Typ 125˚C
25˚C
D C Cur r ent Gai n h F E
DC Curr ent Gain h F E

100 100 –30˚C

Transient Thermal Resistance

10 10
0.5

2 2 0.3
–0.02 –0.1 –1 –10 –0.02 –0.1 –1 –10 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
50 –30 35

1m Natural Cooling
s Silicone Grease
30
Maximu m Power Dissi pation P C (W)

–10 Heatsink: Aluminum

10

Typ 10
m

0m in mm
Cut- off Fr equ ency f T (M H Z )

40 s
–5 DC
Collector Cur rent I C (A)

W
ith

20
In
fin

30
ite

–1
he

150x150x2
at

–0.5
si
nk

Without Heatsink 100x100x2

Natural Cooling 10
20
50x50x2
–0.1
Without Heatsink
2
0 –0.05
0
0.05 0.1 1 10 –3 –5 –10 –50 –100 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

24
 2SA1667/1668
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4381/4382) Application : TV Vertical Output, Audio Output Driver and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20 (TO220F)
Ratings Ratings
Symbol Unit Symbol Conditions Unit
2SA1667 2SA1668 2SA1667 2SA1668 10.1±0.2 4.2±0.2

4.0±0.2
2.8 c0.5
VCBO –150 –200 V –10max –10max µA
ICBO
VCEO –150 –200

8.4±0.2
V VCB= –150 –200 V

16.9±0.3
VEBO –6 V IEBO VEB=–6V –10max µA ø3.3±0.2
a
IC –2 A V(BR)CEO IC=–25mA –150min –200min V

0.8±0.2
b
IB –1 A hFE VCE=–10V, IC=–0.7A 60min

±0.2
3.9
PC 25(Tc=25°C) W VCE(sat) IC=–0.7A, IB=–0.07A –1.0max V

13.0min
Tj 150 °C fT VCE=–12V, IE=0.2A 20typ MHz 1.35±0.15

1.35±0.15
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 60typ pF
0.85 +0.2
-0.1
0.45 +0.2 2.4±0.2
■Typical Switching Characteristics (Common Emitter)
-0.1
2.54 2.54
2.2±0.2

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
B C E
–20 20 –1 –10 5 –100 100 0.4typ 1.5typ 0.5typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sa t ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–10V)
Collector-Emitter Saturation Voltage V C E (s at) (V )

–2.0 –3 –2
A
0m
–5

–1.6 –1.6

Collector Current I C (A)

Collector Current I C (A)

–2
–1.2 –1.2

mp)

Temp)
)
Temp
e Te
–0.8 I B =–5mA/Step –0.8

(Cas

(Case
(Case
–1

125˚C

–30˚C
25˚C
–0.4 –0.4
I C =–2A

–0 .5A –1A

0 0 0
0 –2 –4 –6 –8 –10 –2 –10 –100 –1000 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a (˚C /W )

(V C E =–10V) (V C E =–10V)
400 400 5
125˚C
D C Cur r ent Gai n h F E

D C Cur r ent Gai n h F E

Transient Thermal Resistance

25˚C
Typ

–30˚C
100
100
1

40 30 0.5
–0.01 –0.1 –1 –2 –0.01 –0.1 –1 –2 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
50 –5 25
Natural Cooling
1m
5m

Silicone Grease
20

Heatsink: Aluminum
s
ms

M aximu m Power Dissipat io n P C (W)

in mm
40 20
D
Cut- off Fr equ ency f T (M H Z )

–1 C
Typ
Collector Curr ent I C (A)

W
ith

30
In

150x150x2
fin
ite

1 00x 1 0
he

0x
2
at

20 10
–0.1
si
nk

Without Heatsink
Natural Cooling 50x50x2
10 1.2SA1667
2.2SA1668
Without Heatsink
1 2 2
0 –0.01
0
0.01 0.1 1 2 –1 –10 –100 –300 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

25
 2SA1673
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4388) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol Ratings Unit Symbol Conditions Ratings Unit

0.8±0.2
15.6±0.2 5.5±0.2

VCBO –180 V ICBO VCB=–180V –10max µA 3.45 ±0.2

µA

5.5
9.5±0.2
VCEO –180 V IEBO VEB=–6V –10max
VEBO –6 V V(BR)CEO IC=–50mA –180min V

23.0±0.3
ø3.3±0.2
IC –15 A hFE VCE=–4V, IC=–3A 50min∗ a

1.6
IB –4 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V b

3.0
PC 85(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz

3.3
Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF 1.75 0.8

16.2
2.15
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1

5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
■Typical Switching Characteristics (Common Emitter) 1.5 4.4 1.5
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
B C E
–40 4 –10 –10 5 –1 1 0.6typ 0.9typ 0.2typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–4V)
–15 – 3 –15
Collector-Emitter Saturation Voltage V C E (s at) (V )

A 6A
–1 –0. A
–0.4

Collector Current I C (A)

A
– 0 .2
Collector Current I C (A)

–10 –2 –10

–0 .1 A

mp)
)

p)
Temp

ase Tem
e Te
–5 –50mA –1 –5

Cas

(Case
˚C (

–30˚C (C
25˚C
125
I B =–20mA I C =–10A
–5A

0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 –2.0 0 –1 –2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚ C/W)

(V C E =–4V) (V C E =–4V)
300 200 3
125˚C
DC Cur rent Gain h FE
DC Cur rent Gain h F E

25˚C
Transient Thermal Resistance

Typ 100
–30˚C 1
100

0.5
50
50

10 20 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –15 –0.02 –0.1 –0.5 –1 –5 –10 –15 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
30 –40 100
3m
s
10
m
M aximu m Power Dissip ation P C (W)

10 s
0m 80
Cut- off F req uency f T (MH Z )

Typ –10
s
Collecto r Cur rent I C (A)

20 D
ith

–5 C
In

60
fin
ite

–2
he
at
si
nk

–1 40
10
–0.5
Without Heatsink
Natural Cooling 20
–0.2
Without Heatsink
3.5
0 –0.1 0
0.02 0.1 1 10 –3 –10 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

26
 2SA1693
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4466) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
15.6±0.4 4.8±0.2

5.0±0.2
µA

2.0

1.8
VCBO –80 V ICBO VCB=–80V –10max 9.6 2.0±0.1

VCEO –80 V IEBO VEB=–6V –10max µA

VEBO –6 V V(BR)CEO IC=–50mA –80min V

19.9±0.3

4.0
IC –6 A hFE VCE=–4V, IC=–2A 50min∗ a ø3.2±0.1
b
IB –3 A VCE(sat) IC=–2A, IB=–0.2A –1.5max V
PC 60(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 2

4.0max
20.0min
Tj 150 °C COB VCB=–10V, f=1MHz 150typ pF 3

Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1 0.65 +0.2
-0.1

■Typical Switching Characteristics (Common Emitter) 5.45±0.1

B C E
5.45±0.1 1.4

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
–30 10 –3 –10 5 –0.3 0.3 0.18typ 1.10typ 0.21typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–4V)
–6 –3 –6
A mA
Collector-Emitter Saturation Voltage V C E (s at) (V )

0
0 0m 15 –1 00 m A
–
–2
–8 0m A

Collector Current I C (A)

Collector Current I C (A)

–4 –2 –4
–50mA

–30mA

mp)

)
mp)

Temp
e Te
–20mA

e Te
–2 –1 –2

Cas

(Case
(Cas
˚C (
I B =–10mA I C =–6A

–30˚C
25˚C
125
–4A
–2A

0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 0 –1 –2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚ C/W)

(V C E =–4V) (V C E =–4V)
300 300 5

125˚C
DC Cur rent Gain h FE
DC Curr ent Gain h FE

Transient Thermal Resistance

Typ
25˚C

100 100 –30˚C

1

50
50
0.5

30 30 0.3
–0.02 –0.1 –0.5 –1 –5 –6 –0.02 –0.1 –0.5 –1 –5 –6 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
30 –20 60

–10 10
m
M aximum Power Dissipa ti on P C ( W)

Typ s
100ms
Cut -off Fre quen cy f T (M H Z )

–5
W
ith
Collector Curr ent I C (A)

20 DC 40
In
fin
ite
he
at
si

–1
nk

10 –0.5 20

Without Heatsink
Natural Cooling

Without Heatsink
3.5
0 –0.1 0
0.02 0.05 0.1 0.5 1 5 6 –5 –10 –50 –100 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

27
 2SA1694
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4467) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
15.6±0.4 4.8±0.2

5.0±0.2
µA

2.0
–10max

1.8
VCBO –120 V ICBO VCB=–120V 9.6 2.0±0.1

VCEO –120 V IEBO VEB=–6V –10max µA

VEBO –6 V V(BR)CEO IC=–50mA –120min V

19.9±0.3

4.0
IC –8 A hFE VCE=–4V, IC=–3A 50min∗ a ø3.2±0.1
b
IB –3 A VCE(sat) IC=–3A, IB=–0.3A –1.5max V
PC 80(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 2

4.0max
20.0min
Tj 150 °C COB VCB=–10V, f=1MHz 300typ pF 3

Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1 0.65 +0.2
-0.1

5.45±0.1 5.45±0.1 1.4

■Typical Switching Characteristics (Common Emitter) B C E
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
–40 10 –4 –10 5 –0.4 0.4 0.14typ 1.40typ 0.21typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( s a t ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V CE =–4V)
–8 –3 –8
A A
Collector-Emitter Saturation Voltage V C E (s at) (V )
A

0m 0m
m

0 5
–1
50

–2 mA
–3

–100

Collector Current I C (A)

–6 –7 5m A –6
Collector Current I C (A)

–2
–50mA

–4 –4

mp)

mp)
mp)
–25mA

e Te

e Te
e Te
–1

Cas

(Cas
(Cas
–2 –2

˚C (
I C =–8A
I B =–10mA

–30˚C
25˚C
125
–4A
–2A
0 0 0
0 –1 –2 –3 –4 0 –0.1 –0.2 –0.3 –0.4 –0.5 –0.6 –0.7 –0.8 –0.9 –1.0 0 –0.5 –1.0 –1.5
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a ( ˚ C/W)

(V C E =–4V) (V C E =–4V)
200 300 3

Typ 125˚C
DC Curr ent Gain h FE
D C Cur r ent Gai n h F E

Transient Thermal Resistance

25˚C
100
100 1
–30˚C

50
50 0.5

30 30 0.3
–0.02 –0.1 –0.5 –1 –5 –8 –0.02 –0.1 –0.5 –1 –5 –8 1 10 100 1000

Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
30 –20 80
10
m
–10 100ms s
Maxim um Power Dissip ation P C (W)
Cut- off F req uency f T (MH Z )

Typ –5 DC 60
W
ith
Co lle ctor Cu rren t I C (A)

20
In
fin
ite
he

40
at
si

–1
nk

10
–0.5
20
Without Heatsink
Natural Cooling

Without Heatsink
3.5
0 –0.1
0.02 0.05 0.1 0.5 1 5 8 0
–5 –10 –50 –100 –200 0 25 50 75 100 12 5 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

28
 2SA1695
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4468) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
15.6±0.4 4.8±0.2
µA

5.0±0.2
2.0
VCBO –140 V ICBO VCB=–140V –10max

1.8
9.6 2.0±0.1

VCEO –140 V IEBO VEB=–6V –10max µA

VEBO –6 V V(BR)CEO IC=–50mA –140min V

19.9±0.3

4.0
IC –10 A hFE VCE=–4V, IC=–3A 50min∗ a ø3.2±0.1
b
IB –4 A VCE(sat) IC=–5A, IB=–0.5A –0.5max V
PC 100(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 2

4.0max
20.0min
Tj 150 °C COB VCB=–10V, f=1MHz 400typ pF 3
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1 0.65 +0.2
-0.1

■Typical Switching Characteristics (Common Emitter) 5.45±0.1 5.45±0.1 1.4

B C E
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
–60 12 –5 –10 5 –0.5 0.5 0.17typ 1.86typ 0.27typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–4V)
–10 –3 –10
A
Collector-Emitter Saturation Voltage V C E (s at) (V )

A
mA 0 0m 0m
00 –3 –2
0
0m
A
–4 –15
–8 –8

Collector Current I C (A)

mA
–100
Collector Current I C (A)

–7 5m A –2
–6 –6

–50mA

p)
–4 –4

mp)

)
Tem

Temp
–1

e Te
se
–25mA

(Ca

(Case
(Cas
–2

˚C
–2
I C =–10A

25˚C
125

–30˚C
I B =–10mA
–5A

0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 –2.0 0 –1 –1.5
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =–4V) (V C E =–4V)
200 200 3
125˚C
DC Curr ent Gain h F E

DC Curr ent Gain h F E

Typ
Transient Thermal Resistance

25˚C
100 1
100
–30˚C
0.5

50 50

30 30 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –0.02 –0.1 –0.5 –1 –5 –10 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
30 –30 100
Maximu m Power Diss ip ation P C (W)

–10
Cut-o ff F requ ency f T (MH Z )

10

DC
ith
0m
Co lle ctor Cu rren t I C ( A)

–5
3m

20
s

In

Typ
fin
s

ite
he

50
10

at
si
ms

nk

–1
10
–0.5
Without Heatsink
Natural Cooling

Without Heatsink
3.5
0 –0.1 0
0.02 0.1 1 10 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

29
 2SA1725
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4511) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol Ratings Unit Symbol Conditions Ratings Unit
10.1±0.2 4.2±0.2

4.0±0.2
VCBO –80 V ICBO VCB=–80V –10max µA 2.8 c0.5

VCEO –80 V IEBO VEB=–6V –10max µA

8.4±0.2
VEBO V(BR)CEO IC=–25mA –80min V

16.9±0.3
–6 V
ø3.3±0.2
IC –6 A hFE VCE=–4V, IC=–2A 50min∗ a

0.8±0.2
b
IB –3 A VCE(sat) IC=–2A, IB=–0.2A –0.5max V
PC 30(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz

±0.2
3.9
13.0min
Tj 150 °C COB VCB=–10V, f=1MHz 150typ pF 1.35±0.15

Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.35±0.15

0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
B C E
–30 10 –3 –10 5 –0.3 0.3 0.18typ 1.10typ 0.21typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( s a t ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V CE =–4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )

–6 –3 –6
m
A
0 mA
00 – 15 –1 00 m
A
–2
–5 –8 0m A

Collector Current I C (A)

Collector Current I C (A)

–4 –2 –4
–50mA

–3 –30mA

p)

mp)
Tem

)
emp
–20mA

e Te
–2 –1 –2

se

se T
(Ca

(Cas
(Ca
I B =–10mA I C =–6A

˚C
125

–30˚C
25˚C
–1 –4A
–2A

0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 0 –0.5 –1 –1.5
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =–4V) (V C E =–4V)
300 300 5

125˚C
D C Cur r ent Gai n h F E

DC C urrent G ain h FE

Transient Thermal Resistance

Typ
25˚C

100 100 –30˚C

50 50

0.5
30 30 0.4
–0.02 –0.1 –0.5 –1 –5 –6 –0.02 –0.1 –0.5 –1 –5 –6 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
30 –20 30

–10
10
M aximum Po wer Dissipat io n P C (W)

Typ m
100ms s
–5
Cut -off Fre quen cy f T ( MH Z )

DC
ith
Collecto r Cur ren t I C (A)

20 20
In
fin
ite
he

–1
at
si
nk

–0.5
10 10

Without Heatsink
Natural Cooling
–0.1 Without Heatsink
2
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 6 –3 –5 –10 –50 –100 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

30
 2SA1726
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4512) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-25(TO220)
Symbol Ratings Unit Symbol Conditions Ratings Unit
10.2±0.2 4.8±0.2

3.0±0.2
VCBO –80 V ICBO VCB=–80V –10max µA 2.0±0.1

VCEO –80 V IEBO VEB=–6V –10max µA

V(BR)CEO IC=–25mA

16.0±0.7
VEBO –6 V –80min V
50min∗

8.8±0.2
a ø3.75±0.2
IC –6 A hFE VCE=–4V, IC=–2A
b
IB –3 A VCE(sat) IC=–2A, IB=–0.2A –0.5max V
PC 50(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 1.35

4.0max
12.0min
Tj 150 °C COB VCB=–10V, f=1MHz 150typ pF
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 0.65 +0.2
-0.1

2.5 2.5 1.4

■Typical Switching Characteristics (Common Emitter) B C E
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.6g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
–30 10 –3 –10 5 –0.3 0.3 0.18typ 1.10typ 0.21typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sa t ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V CE =–4V)
–6 –3 –6
A A
Collector-Emitter Saturation Voltage V C E (s at) (V)

m
0m 50 A
0 –1 –1 00 m
–2
–8 0m A

Collector Current I C (A)

Collector Current I C (A)

–4 –2 –4
–50mA

–30mA

p)

mp)
Tem

)
emp
–20mA

e Te
–2 –1 –2

se

se T
(Ca

(Cas
(Ca
I B =–10mA I C =–6A

˚C
125

–30˚C
25˚C
–4A
–2A

0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 0 –0.5 –1 –1.5
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚ C/ W)

(V C E =–4V) (V C E =–4V)
300 300 5

125˚C
DC Cur rent Gain h FE
DC Curr ent Gain h FE

Transient Thermal Resistance

Typ
25˚C

100 100 –30˚C

50 50

0.5
30 30 0.4
–0.02 –0.1 –0.5 –1 –5 –6 –0.02 –0.1 –0.5 –1 –5 –6 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
30 –20 50

–10
100ms 10
Ma xim um Powe r Dissipation P C (W)

Typ m
–5 s 40
Cu t-of f Fr eque ncy f T (MH Z )

DC
ith
Collector Curr ent I C (A)

20
In
fin

30
ite
he

–1
at
si
nk

–0.5 20
10

Without Heatsink
Natural Cooling 10
–0.1
Without Heatsink
2
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 6 –3 –5 –10 –50 –100 0 25 50 75 100 1 25 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

31
 LOW VCE (sat) 2SA1746
Silicon PNP Epitaxial Planar Transistor Application : Chopper Regulator, Switch and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol Ratings Unit Symbol Conditions Ratings Unit

0.8±0.2
15.6±0.2 5.5±0.2
VCBO –70 V ICBO VCB=–70V –10max µA 3.45 ±0.2

µA

5.5
9.5±0.2
VCEO –50 V IEBO VEB=–6V –10max
VEBO –6 V V(BR)CEO IC=–25mA –50min V

23.0±0.3
ø3.3±0.2
IC –12(Pulse–20) A hFE VCE=–1V, IC=–5A 50min a

1.6
IB –4 A VCE(sat) IC=–5A, IB=–80mA –0.5max V b

3.0
PC 60(Tc=25°C) W VBE(sat) IC=–5A, IB=–80mA –1.2max V

3.3
Tj 150 °C fT VCE=–12V, IE=1A 25typ MHz 1.75 0.8

16.2
2.15
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 400typ pF
1.05 +0.2
-0.1

5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
■Typical Switching Characteristics (Common Emitter) 1.5 4.4 1.5
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
–20 4 –5 –10 5 –80 80 0.5typ 0.6typ 0.3typ B C E b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–1V)
–12
Collector-Emitter Saturation Voltage V C E (s a t) (V )

–12 –12mA –1.5

–100 mA

–10 –10
–70mA

Collector Current I C (A)

Collector Current I C (A)

–8 –1.0 –8
–50mA

p)

)
em

emp
–6 –6

mp)
seT
–30m A

seT
(Ca

eTe
(Ca
–4 –0.5 –4

(Cas
˚C

25˚C
125
I C =–10A

–30˚C
I B =–10mA
–2 –5A –2
–3A
–1A
0 0 0
0 –1 –2 –3 –4 –5 –6 –3 –10 –100 –1000 0 –0.5 –1.0 –1.5
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚ C/W)

(V C E =–1V) (V C E =–1V)
500 500 4

125˚C
D C Cur r ent Gai n h F E

D C Cur r ent Gai n h F E

Transient Thermal Resistance

Typ
25˚C

1
–30˚C

100 100 0.5

50 50 0.2
–0.03 –0.1 –0.5 –1 –5 –10 –0.03 –0.1 –0.5 –1 –5 –10 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
40 –30 60
10
0µ
1m

Maxim um Power Dissip ation P C (W)

s
10

s
m
s

–10
Cu t-of f Fr eque ncy f T (MH Z )

30
Collector Curre nt I C (A)

Typ 40
W

–5
ith
In
fin

20
ite
he
at
si

20
nk

10 –1
Without Heatsink
Natural Cooling
Without Heatsink
3.5
0 –0.3 0
0.1 1 10 –3 –10 –50 –100 0 25 50 75 100 125 150
Emitter C urrent I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

32
 2SA1859/1859A
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4883/A) Application : Audio Output Driver and TV Velocity-modulation
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C)
External Dimensions FM20(TO220F)
Ratings Ratings
Symbol Unit Symbol Conditions Unit
2SA1859 2SA1859A 2SA1859 2SA1859A 10.1±0.2 4.2±0.2

4.0±0.2
VCBO –150 –180 V –10max µA 2.8 c0.5
ICBO
VCEO –150 –180 V VCB= –150 –180 V

8.4±0.2
16.9±0.3
VEBO –6 V IEBO VEB=–6V –10max µA
ø3.3±0.2
IC –2 A a
V(BR)CEO IC=–10mA –150min –180min V

0.8±0.2
b
IB –1 A hFE VCE=–10V, IC=–0.7A 60 to 240
PC 20(Tc=25°C) W VCE(sat) –1.0max

±0.2
3.9
IC=–0.7A, IB=–70mA V

13.0min
Tj 150 °C fT VCE=–12V, IE=0.7A 60typ MHz 1.35±0.15

Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 30typ pF 1.35±0.15

0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
–20 20 –1 –10 5 –100 100 0.5typ 1.0typ 0.5typ
B C E b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–4V)
Collector-Emitter Saturation Voltage V C E (sa t) (V )

–2 –3 –2
A
A

0m

5mA
0m
m

–1
00

–3
–6
–1

Collector Current I C (A)

Collector Current I C (A)

–10 mA
–2

–1 –1

mp)

p)
p)
I B =–5mA

aseTem
eTe

eTem
–1

Cas

(Cas
˚C (

–30˚C (C
25˚C
125
I C =–2A
–0.5A –1A

0 0 0
0 –2 –4 –6 –8 –10 –2 –5 –10 –50 –100 –500 –1000 0 –0.5 –1
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

(V C E =–4V) (V C E =–4V)
θ j - a (˚ C/W)

300 300 7
125˚C
5
DC Cur rent Gain h FE
DC Curr ent Gain h F E

Transient Thermal Resistance

Typ 25˚C

100 100 –30˚C

50 50 1
–0.01 –0.1 –0.5 –1 –2 –0.01 –0.1 –0.5 –1 –2 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
100 –5 20
1m
10

M aximum Po wer Dissipat io n P C (W)

ms

s
10

80
D
0m
Cut -off Fre quen cy f T ( MH Z )

–1 C
W

Typ
s

ith
Collector Cur rent I C (A)

In

–0.5
fin

60
ite
he

10
at
si
nk

40
–0.1

Without Heatsink
–0.5
Natural Cooling
20
1.2SA1859
2.2SA1859A
Without Heatsink
1 2 2
0 –0.01
0.01 0.05 0.1 0.5 1 2 0
–1 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

33
 LAPT 2SA1860
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4886) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol Ratings Unit Symbol Conditions Ratings Unit

0.8±0.2
15.6±0.2 5.5±0.2
VCBO –150 V ICBO VCB=–150V –100max µA 3.45 ±0.2

µA

5.5
VCEO –150 V IEBO VEB=–5V –100max

9.5±0.2
VEBO –5 V V(BR)CEO IC=–25mA –150min V

23.0±0.3
IC –14 A hFE VCE=–4V, IC=–5A 50min∗ a
ø3.3±0.2

1.6
IB –3 A VCE(sat) IC=–5A, IB=–500mA –2.0max V b

3.0
PC 80(Tc=25°C) W fT VCE=–12V, IE=2A 50typ MHz

3.3
Tj 150 °C COB VCB=–10V, f=1MHz 400typ pF 1.75 0.8

16.2
2.15
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1

5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
■Typical Switching Characteristics (Common Emitter)
1.5 4.4 1.5
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
–60 12 –5 –10 5 –500 500 0.25typ 0.85typ 0.2typ B C E b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–4V)
–14 –3 –14
A
m mA
mA

Collector-Emitter Saturation Voltage V C E (s at) (V )

mA mA
00 500 400 00
00

–6 – – –3
mA
–7

–200

Collector Current I C (A)

–1 50 m A
Collector Current I C (A)

–10 –10
–2
–100 mA

p)
p)
Tem

)
emp
Tem
–5 –50mA –5
–1

se

eT
ase
(Ca
I C =–10A

Cas
C (C
˚C

˚C (
I B =–20mA
125

25˚
–5A

–30
0 0 0
0 –1 –2 –3 –4 0 –0.2 –0.4 –0.6 –0.8 –1.0 0 –1 –2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =–4V) (V C E =–4V)
200 200 3

125˚C
DC Cur rent Gain h FE
DC Cur rent Gain h FE

Transient Thermal Resistance

100 Typ 1
100 25˚C

–30˚C 0.5
50

50

20 30 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –14 –0.02 –0.1 –0.5 –1 –5 –10 –14 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
80 –40 80

1m
10 s
M aximum Power Dissipa ti on P C (W)

10 m
–10 s
0m
Cu t-off Fre quen cy f T (M H Z )

60 D 60
W

C s
ith
Collect or Cur ren t I C (A)

Typ –5
In
fin
ite
he

40 40
at
si

–1
nk

–0.5

20 Without Heatsink 20
Natural Cooling

–0.1
Without Heatsink
3.5
0 –0.05
0.02 0.1 1 10 0
–2 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

34
 2SA1907
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5099) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol Ratings Unit Symbol Conditions Ratings Unit

0.8±0.2
15.6±0.2 5.5±0.2
VCBO –80 V ICBO VCB=–80V –10max µA 3.45 ±0.2

µA

5.5
IEBO –10max

9.5±0.2
VCEO –80 V VEB=–6V
VEBO –6 V V(BR)CEO IC=–50mA –80min V

23.0±0.3
50min∗
ø3.3±0.2
IC –6 A hFE VCE=–4V, IC=–2A a

1.6
IB –3 A VCE(sat) IC=–12A, IB=–0.2A –0.5max V b

3.0
PC 60(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz

3.3
Tj 150 °C COB VCB=–10V, f=1MHz 150typ pF 1.75 0.8

16.2
2.15
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
1.05 +0.2
-0.1

5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
■Typical Switching Characteristics (Common Emitter) 1.5 4.4 1.5
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
–30 10 –3 –10 5 –0.3 0.3 0.18typ 1.10typ 0.21typ B C E b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sa t ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V CE =–4V)
–6 –3 –6
A A
Collector-Emitter Saturation Voltage V C E (s at) (V )

m
0m 50 A
0 –1 –1 00 m
–2
–5 –8 0m A

Collector Current I C (A)

Collector Current I C (A)

–4 –2 –4
–50mA

–3 –30mA

p)

mp)
Tem

)
emp
–20mA

e Te
–2 –1 –2

se

se T
(Ca

(Cas
(Ca
I B =–10mA I C =–6A

˚C
125

–30˚C
25˚C
–1 –4A
–2A

0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 0 –1 –1.5
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =–4V) (V C E =–4V)
300 300 5

125˚C
DC Cur rent Gain h FE
DC Curr ent Gain h F E

Transient Thermal Resistance

Typ
25˚C

100 100 –30˚C

1

50 50
0.5

30 30 0.3
–0.02 –0.1 –0.5 –1 –5 –6 –0.02 –0.1 –0.5 –1 –5 –6 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
30 –20 60

–10 1m
Ma xim um Powe r Dissipation P C (W)

Typ s
10
Cu t-of f Fr eque ncy f T ( MH Z )

10 ms
W

–5 0m
ith

s
Collecto r Cur rent I C ( A)

DC
20 40
In
fin
ite
he
at
si
nk

–1

10 20
–0.5
Without Heatsink
Natural Cooling

Without Heatsink
3.5
0 –0.1 0
0.02 0.05 0.1 0.5 1 5 6 –5 –10 –50 –100 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

35
 2SA1908
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5100) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol Ratings Unit Symbol Conditions Ratings Unit

0.8±0.2
15.6±0.2 5.5±0.2
VCBO –120 V ICBO VCB=–120V –10max µA 3.45 ±0.2

µA

5.5
IEBO VEB=–6V –10max

9.5±0.2
VCEO –120 V
VEBO –6 V V(BR)CEO IC=–50mA –120min V

23.0±0.3
50min∗
ø3.3±0.2
IC –8 A hFE VCE=–4V, IC=–3A a

1.6
IB –3 A VCE(sat) IC=–3A, IB=–0.3A –0.5max V b

3.0
PC 75(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz

3.3
Tj 150 °C COB VCB=–10V, f=1MHz 300typ pF 1.75 0.8

16.2
2.15
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
1.05 +0.2
-0.1

5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
■Typical Switching Characteristics (Common Emitter)
1.5 4.4 1.5
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
–40 10 –4 –10 5 –0.4 0.4 0.14typ 1.40typ 0.21typ B C E b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–4V)
–8 –3 –8
A
Collector-Emitter Saturation Voltage V C E (s at) (V )

A
A

m m
m

00 50
–1
50

–2 mA
–3

–100

Collector Current I C (A)

–6 –7 5m A –6
Collector Current I C (A)

–2
–50mA

–4 –4

mp)

mp)
mp)
–25mA

e Te

e Te
e Te
–1

Cas

(Cas
(Cas
–2 –2

˚C (
I C =–8A
I B =–10mA

–30˚C
25˚C
125
–4A
–2A
0 0 0
0 –1 –2 –3 –4 0 –0.2 –0.4 –0.6 –0.8 –1.0 0 –0.5 –1.0 –1.5
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚C/W)

(V C E =–4V) (V C E =–4V)
200 300 4

125˚C
Typ
DC Curr ent Gain h FE

DC Curr ent Gain h FE

Transient Thermal Resistance

25˚C
100 100
1
–30˚C

0.5
50 50

30 30 0.2
–0.02 –0.1 –0.5 –1 –5 –8 –0.02 –0.1 –0.5 –1 –5 –8 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
30 –20 80

–10 10
m
Ma xim um Powe r Dissipat io n P C (W)

10 s
0m
Typ s
Cut-o ff Fr eque ncy f T ( MH Z )

–5 DC 60
W
Collector Curr ent I C (A)

ith

20
In
fin
ite
he

40
at
si

–1
nk

10
–0.5
Without Heatsink 20
Natural Cooling

Without Heatsink
3.5
0 –0.1 0
0.02 0.05 0.1 0.5 1 5 8 –5 –10 –50 –100 –150 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

36
 2SA1909
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5101) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol Ratings Unit Symbol Conditions Ratings Unit

0.8±0.2
15.6±0.2 5.5±0.2
VCBO –140 V ICBO VCB=–140V –10max µA 3.45 ±0.2

µA

5.5
9.5±0.2
VCEO –140 V IEBO VEB=–6V –10max
VEBO –6 V V(BR)CEO IC=–50mA –140min V

23.0±0.3
ø3.3±0.2
IC –10 A hFE VCE=–4V, IC=–3A 50min∗ a

1.6
IB –4 A VCE(sat) IC=–5A, IB=–0.5A –0.5max V b

3.0
PC 80(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz

3.3
Tj 150 °C COB VCB=–10V, f=1MHz 400typ pF 1.75 0.8

16.2
2.15
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1

5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
■Typical Switching Characteristics (Common Emitter)
1.5 4.4 1.5
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
–60 12 –5 –10 5 –0.5 0.5 0.17typ 1.86typ 0.27typ B C E b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–4V)
–10 –3 –10
A A
Collector-Emitter Saturation Voltage V C E (s at) (V)

m m m A
00 00 00 A
–4 –3 –2 0m
–15
–8 –8

Collector Current I C (A)

mA
–100
Collector Current I C (A)

–7 5m A –2
–6 –6

–50mA

p)
–4 –4

mp)

)
Tem

Temp
–1

e Te
se
–25mA

(Ca

(Case
(Cas
–2

˚C
–2
I C =–10A

25˚C
125

–30˚C
I B =–10mA
–5A

0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 –2.0 0 –1 –1.5
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚C /W)

(V C E =–4V) (V C E =–4V)
200 200 3

125˚C
D C Cur r ent Gai n h F E
DC Curr ent Gain h FE

Typ
Transient Thermal Resistance

100 1
100 25˚C

–30˚C
0.5
50

50

30 20 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –0.02 –0.1 –0.5 –1 –5 –10 1 10 100 1000 2000

Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
30 –30 80
M aximum Po wer Dissipation P C (W)

–10
10
Cu t-of f Fr eque ncy f T (MH Z )

60
W
10

ms

ith
Collector Curr ent I C (A)

–5
0m

20 D
In

C
s

Typ
fin
ite
he

40
at
si
nk

–1
10
–0.5
Without Heatsink 20
Natural Cooling

Without Heatsink
3.5
0 –0.1
0.02 0.1 1 10 0
–3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

37
 2SA2042
Silicon PNP Epitaxial Planar Transistor Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol Ratings Unit Symbol Conditions Ratings Unit
10.1±0.2 4.2±0.2

4.0±0.2
VCBO −50 V ICBO VCB＝−50V −10max µA 2.8 c0.5

VCEO −50 V IEBO VEB＝−6V −10max µA

8.4±0.2
16.9±0.3
VEBO −6 V V(BR)CEO IC＝−25mA −50min V
ø3.3±0.2
IC −10（pulse−20） A hFE VCE＝−2V, IC＝−1A 130∼310 a

0.8±0.2
b
IB −3 A VCE(sat) IC＝−5A, IB＝−0.1A −0.5max V
PC 30(Tc＝25°C) W fT VCE＝−12V, IE＝0.5A 60typ MHz

±0.2
3.9
13.0min
Tj 150 °C COB VCB＝−10V, f＝1MHz 375typ pF 1.35±0.15

Tstg −55 to ＋150 °C 1.35±0.15

0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
–20 4 –5 –10 5 –100 100 0.2typ 0.7typ 0.1typ B C E b. Lot No.

38
 (2 k Ω)(6 5 0Ω) E

Darlington 2SB1257 B

Equivalent circuit C

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014) Application : Driver for Solenoid, Relay and Motor and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)

0.8±0.2
Symbol Ratings Unit Symbol Conditions Ratings Unit 15.6±0.2 5.5±0.2
3.45 ±0.2
VCBO –60 V ICBO VCB=–60V –10max µA

5.5
9.5±0.2
VCEO –60 V IEBO VEB=–6V –10max µA

23.0±0.3
VEBO –6 V V(BR)CEO IC=–10mA –60min V
ø3.3±0.2
IC –4(Pulse–6) A hFE VCE=–4V, IC=–3A 2000min a

1.6
b
IB –1 A VCE(sat) IC=–3A, IB=–6mA –1.5max V

3.0
3.3
PC 25(Tc=25°C) W VBE(sat) IC=–3A, IB=–6mA –2max V
1.75 0.8
Tj 150 °C fT VCE=–12V, IE=0.2A 150typ MHz

16.2
2.15
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 75typ pF 1.05 +0.2
-0.1

5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
■Typical Switching Characteristics (Common Emitter) 1.5 4.4 1.5
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
–30 10 –3 –10 5 –10 10 0.4typ 0.8typ 0.6typ B C E b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–2V)
Collector-Emitter Saturation Voltage V C E (s at) (V )

–6 –3 –4
mA
A

– 1 .8
3m

–1 .5 m A
2.
=–

–5
IB

Collector Current I C (A)

–1.2 mA –3
Collector Current I C (A)

–4 –2
–1.0mA

mp)
–0.8mA

)
–3 –2

Temp

)
Temp
e Te
–3A

(Cas

(Case

(Case
–2 –1 –2A

125˚C

25˚C
–1

–30˚C
I C =–1A

–1

0 –0.6 0
0 –1 –2 –3 –4 –5 –6 –0.2 –0.5 –1 –5 –10 –50 0 –1 –2 –2.2
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚ C/W)

(V C E =–2V) (V C E =–2V)
8000 8000 5
5000
Typ 5000
DC Cur r ent Gai n h F E

DC Cur r ent Gai n h F E

Transient Thermal Resistance

1000 1000 5˚C

12
˚C
500 500 25
0˚C
–3
100 100
1
50 50

20 20 0.7
–0.02 –0.1 –0.5 –1 –5 –6 –0.02 –0.05 –0.1 –0.5 –1 –5 –6 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
240 –10 25
Natural Cooling
Silicone Grease
–5 Heatsink: Aluminum
Maxim um Power Dissipation P C (W)
1m

200 in mm
20
10

s
m
Cut- off F req uency f T (M H Z )

DC
s

Typ
Co lle ctor Cu rre nt I C ( A)

160
W
ith
In

–1 150x150x2
fin

120
ite

1 00x 1 0
he

0x
2
at

–0.5 10
si
nk

80
50x50x2
Without Heatsink
40 Natural Cooling
Without Heatsink
–0.1 2
0 –0.07 0
0.05 0.1 0.5 1 4 –3 –5 –10 –70 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

39
 (3 k Ω)(1 0 0Ω) E

Darlington
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD1785)
2SB1258 B

Equivalent circuit C

Application : Driver for Solenoid, Relay and Motor and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol Ratings Unit Symbol Conditions Ratings Unit 4.2±0.2
10.1±0.2

4.0±0.2
2.8 c0.5
VCBO –100 V ICBO VCB=–100V –10max µA
VCEO –100 V IEBO VEB=–6V –10max µA

8.4±0.2
16.9±0.3
VEBO –6 V V(BR)CEO IC=–10mA –100min V
ø3.3±0.2
IC –6(Pulse–10) hFE VCE=–2V, IC=–3A 1000min a
A

0.8±0.2
b
IB –1 A VCE(sat) IC=–3A, IB=–6mA –1.5max V
PC 30(Tc=25°C) VBE(sat) IC=–3A, IB=–6mA –2max V

±0.2
3.9
W

13.0min
Tj 150 °C fT VCE=–12V, IE=0.2A 100typ MHz 1.35±0.15

Tstg COB 100typ 1.35±0.15

–55 to +150 °C VCB=–10V, f=1MHz pF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
B C E
–30 10 –3 –10 5 –6 6 0.6typ 1.6typ 0.5typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )

–6 –3 –6
mA mA
–2.0
A

4
2.
4m

–
–1 .8 m A
3.
=–

–5 –5
IB

Collector Current I C (A)

–1.2 mA
Collector Current I C (A)

–4 –4

–0.9mA –2

–3 –3

mp)

)
Temp

Temp
e Te
(Cas

(Case
–2

(Case
–2
–6A

125˚C

25˚C
–4A

–30˚C
–1 –1 I C =–2A –1

0 –0.6 0
0 –1 –2 –3 –4 –5 –6 –0.5 –1 –10 –100 –200 0 –1 –2 –2.2
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚ C/ W)

(V C E =–4V) (V C E =–4V)
8000 8000 5
Typ
5000 5000
DC Curr ent Gain h FE

DC Curr ent Gain h FE

Transient Thermal Resistance

5˚C
12
˚C
1000 25
1000
500
0˚C
500 –3
1
100

80 30 0.5
–0.03 –0.1 –0.5 –1 –6 –0.03 –0.1 –0.5 –1 –6 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
120 –20 30

Typ –10 Natural Cooling

10

Silicone Grease
Ma xim um Powe r Dissipation P C (W)

100
50

0µ

Heatsink: Aluminum
1m

0µ
10

–5
s

in mm
Cu t-off Fr eque ncy f T ( MH Z )

s
m

DC
s
Collector Cur rent I C (A)

80 20
W
ith
In
fin

60 –1 150x150x2
ite
he

100x100x2
at

–0.5
si

40 10
nk

Without Heatsink 50x50x2

Natural Cooling
20
–0.1 Without Heatsink
2
0 –0.05 0
0.05 0.1 0.5 1 5 6 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

40
 (3 k Ω)(1 0 0Ω) E

Darlington
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2081)
2SB1259 B

Equivalent circuit C

Application : Driver for Solenoid, Relay and Motor and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol Ratings Unit Symbol Conditions Ratings Unit 10.1±0.2 4.2±0.2

4.0±0.2
2.8 c0.5
VCBO –120 V ICBO VCB=–120V –10max µA
VCEO –120 V IEBO VEB=–6V –10max mA

8.4±0.2
16.9±0.3
VEBO –6 V V(BR)CEO IC=–10mA –120min V ø3.3±0.2
a
IC –10(Pulse–15) A hFE VCE=–4V, IC=–5A 2000min

0.8±0.2
b
IB –1 A VCE(sat) IC=–5A, IB=–10mA –1.5max V

±0.2
3.9
PC 30(Tc=25°C) W VBE(sat) IC=–5A, IB=–10mA –2.0max V

13.0min
Tj 150 °C fT VCE=–12V, IE=0.2A 100typ MHz 1.35±0.15

1.35±0.15
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 145typ pF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
B C E
–30 10 –3 –10 5 –6 6 0.6typ 1.6typ 0.5typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )

–15 –3 –10
A m A
A

0m 10
0m

–
–2
–5

A
–5m
–8

Collector Current I C (A)

A
–3m
Collector Current I C (A)

–10 –2
–2mA
–6

mp)
Temp

)
Temp
I C =–10A

e Te
I B =–1mA

(Case
–4

(Cas

(Case
–5 –1 –5A

125˚C

25˚C
–1A

–30˚C
–2

0 0 0
0 –1 –2 –3 –4 –5 –6 –0.2 –1 –10 –100 –1000 0 –1 –2 –2.2
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

(V C E =–4V) (V C E =–4V)
θ j - a (˚C /W)

20000 20000 5
10000 10000
Typ
D C Cur r ent Gai n h F E

D C Cur r ent Gai n h F E

5000 5000
5˚C
Transient Thermal Resistance

12
˚C
1000 25
1000
500 0˚C
500 –3 1

100
100 0.5
50

50 20 0.3
–0.03 –0.1 –0.5 –1 –5 –10 –0.02 –0.1 –0.5 –1 –5 –10 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
200 –20 30

Natural Cooling
10

–10
Typ
0µ

Silicone Grease
M aximu m Power Dissipat io n P C (W)
1m

Heatsink: Aluminum
10

–5
s

in mm
Cut- off F req uency f T (MH Z )

DC
s
Co lle ctor Cu rren t I C (A)

20
W
ith
In

–1
fin

100 150x150x2
ite

–0.5
he

100x100x2
at
si

10
nk

Without Heatsink
Natural Cooling 50x50x2
–0.1

Without Heatsink
–0.05 2
0 –0.03 0
0.05 0.1 0.5 1 5 10 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

41
 (2 k Ω)(1 0 0Ω) E

Darlington 2SB1351 B

Equivalent circuit C

Silicon PNP Epitaxial Planar Transistor Application : Driver for Printer Head, Solenoid, Relay, Motor and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol Ratings Unit Symbol Condition Ratings Unit 4.2±0.2
10.1±0.2

4.0±0.2
2.8 c0.5
VCBO –60 V ICBO VCB=–60V –10max µA
VCEO –60 V IEBO VEB=–6V –10max mA

8.4±0.2
16.9±0.3
VEBO –6 V V(BR)CEO IC=–10mA –60min V
ø3.3±0.2
IC –12(Pulse–20) hFE VCE=–4V, IC=–10A 2000min a
A

0.8±0.2
b
IB –1 A VCE(sat) IC=–10A, IB=–20mA –1.5max V
PC 30(Tc=25°C) W VBE(sat) IC=–10A, IB=–20mA –2.0max V

±0.2
3.9
13.0min
Tj 150 °C fT VCE=–12V, IE=1A 130typ MHz 1.35±0.15

Tstg COB VCB=–10V, f=1MHz 170typ 1.35±0.15

–55 to +150 °C pF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
B C E
–40 4 –10 –10 5 –20 20 0.7typ 1.5typ 0.6typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )

–20 –3 –20
A
–6m
A
0m

–4 m A
–1

–3 mA

Collector Current I C (A)

–15 –15
Collector Current I C (A)

–2m A –2

–10 –10

)
emp

)
emp
I B =–1mA I C =–10A

mp)
eT

se T

e Te
Cas
–1 –5A

(Ca
–1A

˚C (

(Cas
–5 –5

25˚C
125

–30˚C
0 0 0
0 –1 –2 –3 –4 –5 –6 –0.1 –1 –10 –100 0 –1 –2 –2.4
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =–4V) (V C E =–4V)
20000 20000 5

C
10000 5˚
DC Cur rent Gain h FE

DC Cur rent Gain h FE

Transient Thermal Resistance

10000 Typ 12

˚C
5000 25
5000 ˚C
–30
1

1000 0.5
1000
800 500 0.3
–0.3 –1 –5 –10 –20 –0.3 –0.5 –1 –5 –10 –20 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
240 –30 30

Natural Cooling
Silicone Grease
Ma ximum Po we r Dissipatio n P C (W)
1m

200 –10
Heatsink: Aluminum
10

s
m
Cut-o ff F requ ency f T (MH Z )

DC in mm
s

–5
Collecto r Cur ren t I C (A)

160 20
W

Typ
ith
In
fin

120 150x150x2
ite

–1
he

100x100x2
at

–0.5
si

80 10
nk

Without Heatsink
Natural Cooling 50x50x2

40
–0.1 Without Heatsink
2
0 –0.05 0
0.05 0.1 0.5 1 5 10 20 –2 –5 –10 –50 –100 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

42
 (2 k Ω)(1 0 0Ω) E

Darlington 2SB1352 B

Equivalent circuit C

Silicon PNP Epitaxial Planar Transistor Application : Driver for Printer Head, Solenoid, Relay, Motor and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol Ratings Unit Symbol Conditions Ratings Unit

0.8±0.2
15.6±0.2 5.5±0.2

VCBO –60 V ICBO VCB=–60V –10max µA 3.45 ±0.2

5.5
9.5±0.2
VCEO –60 V IEBO VEB=–6V –10max mA

23.0±0.3
VEBO –6 V V(BR)CEO IC=–10mA –60min V
ø3.3±0.2
IC –12(Pulse–20) A hFE VCE=–4V, IC=–10A 2000min a

1.6
b
IB –1 A VCE(sat) IC=–10A, IB=–20mA –1.5max V

3.0
PC 60(Tc=25°C) VBE(sat) IC=–10A, IB=–20mA –2.0max V

3.3
W
Tj fT 130typ 1.75 0.8
150 °C VCE=–12V, IE=1A MHz

16.2
2.15
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 170typ pF +0.2
1.05 -0.1

5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
■Typical Switching Characteristics (Common Emitter)
1.5 4.4 1.5
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
–40 4 –10 –10 5 –20 20 0.7typ 1.5typ 0.6typ B C E b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )

–20 –3 –20
A
–6m
A
m

–4 m A
10
=–
IB

–3 mA

Collector Current I C (A)

–15 –15
Collector Current I C (A)

–2m A –2

–10 –10

)
emp

)
emp
–1mA I C =–10A

mp)
eT

se T

e Te
Cas
–1 –5A

(Ca
–1A

˚C (

(Cas
–5 –5

25˚C
125

–30˚C
0 0 0
0 –1 –2 –3 –4 –5 –6 –0.1 –1 –10 –100 0 –1 –2 –2.4
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =–4V) (V C E =–4V)
20000 20000 5

C
10000 5˚
DC Cur rent Gain h FE

DC Cur rent Gain h FE

12
Transient Thermal Resistance

10000 Typ
˚C
5000 25
5000 ˚C
–30
1

1000 0.5
1000
800 500 0.3
–0.3 –1 –5 –10 –20 –0.3 –0.5 –1 –5 –10 –20 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
240 –30 60

DC
Ma ximum Po we r Dissipatio n P C (W)
1m

200 –10
10

s
m
Cut-o ff F requ ency f T (MH Z )

–5
Collecto r Cur ren t I C (A)

160 40
W

Typ
ith
In
fin

120
ite

–1
he
at

–0.5
si

80 20
nk

Without Heatsink
Natural Cooling

40
–0.1 Without Heatsink
3.5
0 –0.05 0
0.05 0.1 0.5 1 5 10 20 –2 –5 –10 –50 –100 0 50 100 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

43
 (2 k Ω) (80Ω) E

Darlington 2SB1382 B

Equivalent circuit C

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2082) Application : Chopper Regulator, DC Motor Driver and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol Ratings Unit Symbol Conditions Ratings Unit

0.8±0.2
15.6±0.2 5.5±0.2
VCBO –120 V ICBO VCB=–120V –10max µA 3.45 ±0.2

5.5
9.5±0.2
VCEO –120 V IEBO VEB=–6V –10max mA
VEBO –6 V(BR)CEO IC=–10mA –120min V

23.0±0.3
V
ø3.3±0.2
IC –16(Pulse–26) A hFE VCE=–4V, IC=–8A 2000min a

1.6
IB –1 VCE(sat) IC=–8A, IB=–16mA –1.5max V b
A

3.0
PC 75(Tc=25°C) W VBE(sat) IC=–8A, IB=–16mA –2.5max V

3.3
Tj 150 °C fT VCE=–12V, IE=1A 50typ MHz 1.75 0.8

16.2
2.15
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 350typ pF
1.05 +0.2
-0.1

5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
■Typical Switching Characteristics (Common Emitter)
1.5 4.4 1.5
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
–40 5 –8 –10 5 –16 16 0.8typ 1.8typ 1.0typ B C E b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )

–26 –3 –16
A
m A
A

20 –12m
0m

–
–4

Collector Current I C (A)

–20 –6 mA –12
Collector Current I C (A)

–2

p)
I C =–16A
–3m A

Tem

)
emp

mp)
–8

se

se T

e Te
(Ca
–8A

(Ca
–10

(Cas
I B =–1.5m A

˚C
–1 –4A

125

25˚C

–30˚C
–4

0 0 0
0 –1 –2 –3 –4 –5 –6 –0.5 –1 –10 –100 0 –1 –2 –2.4
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a ( ˚ C/ W)

(V C E =–4V) (V C E =–4V)
20000 20000 3
D C Cur r ent Gai n h F E

D C Cur r ent Gai n h F E

10000 10000
Transient Thermal Resistance

Typ 5˚C
12
5000 5000 1
˚C
25
˚C
– 30
0.5

1000 1000

500 500 0.2

–0.3 –0.5 –1 –5 –10 –16 –0.3 –0.5 –1 –5 –10 –16 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
100 –50 80

10
1m 0µ
10 s s
M aximu m Power Dissipat io n P C (W)

Typ m
–10 s
Cut- off F req uency f T (MH Z )

DC 60
W
ith
Co lle ctor Cu rren t I C (A)

–5
In
fin
ite
he

50
at

40
–1
si
nk

–0.5

Without Heatsink
Natural Cooling 20

–0.1

–0.05 Without Heatsink

3.5
0 –0.03 0
0.05 0.1 0.5 1 5 10 16 –3 –5 –10 –50 –100 –200 0 50 100 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

44
 (2 k Ω) (80Ω) E

Darlington 2SB1383 B

Equivalent circuit C

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2083) Application : Chopper Regulator, DC Motor Driver and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
15.6±0.4 4.8±0.2

5.0±0.2
µA

2.0

1.8
VCBO –120 V ICBO VCB=–120V –10max 9.6 2.0±0.1

VCEO –120 V IEBO VEB=–6V –10max mA

VEBO –6 –120min

19.9±0.3
V V(BR)CEO IC=–25mA V

4.0
a ø3.2±0.1
IC –25(Pulse–40) A hFE VCE=–4V, IC=–12A 2000min
b
IB –2 A VCE(sat) IC=–12A, IB=–24mA –1.8max V
PC 120(Tc=25°C) W VBE(sat) IC=–12A, IB=–24mA –2.5max V 2

4.0max
20.0min
Tj 150 °C fT VCE=–12V, IE=1A 50typ MHz 3

Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 230typ pF 1.05 +0.2

-0.1 0.65 +0.2
-0.1

5.45±0.1 5.45±0.1 1.4

■Typical Switching Characteristics (Common Emitter) B C E
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
–24 2 –12 –10 5 –24 24 1.0typ 3.0typ 1.0typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )

–25 –3 –25

.0 mA
–8 –6 .0 m A

–20 –20

Collector Current I C (A)

–4 .0m A
Collector Current I C (A)

I C =–25A
–2
–15 –15
–2.5m A

)
mp

p)
em
Te

)
emp
eT
se
–12A
–10 –10

(Ca
–1.5mA

eT
Cas
–1

Cas
5˚C
–6A

C(
12

25˚

˚C (
–1.0mA

–30
–5 –5
I B =–0.6mA

0 0 0
0 –1 –2 –3 –4 –5 –6 –0.5 –1 –10 –100 –500 0 –1 –2 –2.6
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚ C/W)

(V C E =–4V) (V C E =–4V)
20000 20000 2

10000 10000
DC Cur rent Gain h FE

DC Cur rent Gain h FE

5˚C
Transient Thermal Resistance

Typ 12 1
5000 5000
˚C
25
0.5
˚C
–30
1000 1000

500 500

200 200 0.1

–0.2 –0.5 –1 –5 –10 –40 –0.2 –0.5 –1 –5 –10 –40 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
60 –100 120

Typ –50
M aximum Power Dissipa ti on P C (W)

50 100
Cut- off F req uency f T (MH Z )

1m

W
10

ith
Co lle ctor Cu rre nt I C (A)

s
m

40 DC
In
s

–10
fin
ite
he

30 –5
at
si
nk

50

20
–1

10 Without Heatsink
–0.5
Natural Cooling
Without Heatsink
3.5
0 –0.2 0
0.1 0.5 1 5 10 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

45
 (2 k Ω) (80Ω) E

Darlington 2SB1420 B

Equivalent circuit C

Silicon PNP Epitaxial Planar Transistor Application : Chopper Regulator, DC Motor Driver and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
15.6±0.4 4.8±0.2

5.0±0.2
µA

2.0

1.8
VCBO –120 V ICBO VCB=–120V –10max 9.6 2.0±0.1

VCEO –120 V IEBO VEB=–6V –10max mA

VEBO –6 V V(BR)CEO IC=–10mA –120min V

19.9±0.3

4.0
a ø3.2±0.1
IC –16(Pulse–26) A hFE VCE=–4V, IC=–8A 2000min
b
IB –1 A VCE(sat) IC=–8A, IB=–16mA –1.5max V
PC 80(Tc=25°C) W VBE(sat) IC=–8A, IB=–16mA –2.5max V 2

4.0max
20.0min
Tj 150 °C fT VCE=–12V, IE=1A 50typ MHz 3

Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 350typ pF 1.05 +0.2

-0.1 0.65 +0.2
-0.1

5.45±0.1 5.45±0.1 1.4

■Typical Switching Characteristics (Common Emitter) B C E
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
–24 2 –12 –10 5 –24 24 1.0typ 3.0typ 1.0typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sa t ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V CE =–4V)
Collector-Emitter Saturation Voltage V C E (s at) (V)

–26 –3 –16
A
m A
A

0
–2 –12m
0m
–4

Collector Current I C (A)

–20 –6 mA –12
Collector Current I C (A)

–2

p)
I C =–16A
–3m A

Tem

)
emp

mp)
–8

se

se T

e Te
(Ca
–8A

(Ca
–10

(Cas
I B =–1.5m A

˚C
–1 –4A

125

25˚C

–30˚C
–4

0 0 0
0 –1 –2 –3 –4 –5 –6 –0.5 –1 –10 –100 0 –1 –2 –2.4
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚C /W )

(V C E =–4V) (V C E =–4V)
20000 20000 3
DC Cur rent Gain h F E

DC Cur rent Gain h F E

10000 10000
Transient Thermal Resistance

Typ 5˚C
12
5000 5000 1
˚C
25
0 ˚C
–3
0.5

1000 1000

500 500 0.2

–0.3 –1 –5 –10 –16 –0.3 –0.5 –1 –5 –10 –16 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
100 –50 80

10
1m 0µ
10 s s
M aximum Po we r Dissipatio n P C (W)

Typ m
s
–10
Cut-o ff F requ ency f T (MH Z )

DC 60
W
ith
Collecto r Cur ren t I C (A)

–5
In
fin
ite
he

50 40
at

–1
si
nk

–0.5
Without Heatsink
Natural Cooling
20

–0.1

–0.05 Without Heatsink

3.5
0 –0.03 0
0.05 0.1 0.5 1 5 10 16 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A ) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

46
 (7 0 Ω ) E

Darlington 2SB1559 B

Equivalent circuit C

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2389) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
4.8±0.2
µA
15.6±0.4

5.0±0.2
VCBO –160 ICBO VCB=–160V –100max

2.0
V

1.8
9.6 2.0±0.1

VCEO –150 V IEBO VEB=–5V –100max µA

VEBO –5 V V(BR)CEO IC=–30mA –150min V

19.9±0.3

4.0
IC –8 A hFE VCE=–4V, IC=–6A 5000min∗ a ø3.2±0.1
b
IB –1 A VCE(sat) IC=–6A, IB=–6mA –2.5max V
PC 80(Tc=25°C) W VBE(sat) IC=–6A, IB=–6mA –3.0max V 2

4.0max
20.0min
Tj 150 °C fT VCE=–12V, IE=1A 65typ MHz 3
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 160typ pF 1.05 +0.2
-0.1 0.65 +0.2
-0.1

∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)

5.45±0.1 5.45±0.1 1.4
■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
–60 10 –6 –10 5 –6 6 0.7typ 3.6typ 0.9typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

A
m

(V C E =–4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )
.5
mA

–8 –3 –8
–2

mA A
–2.0 – 1 .8 m
–10

A
– 1 .5 m
–1. 3m A

Collector Current I C (A)

–6 –1 .0 mA –6
Collector Current I C (A)

–0.8m A –2 –8A

–4 –0.5m A –6A
–4

p)

mp)
I C =–4A

Tem

)
emp
e Te
I B =–0.3mA –1

se

se T
(Ca

Cas
(Ca
–2 –2

˚C

˚C (
25˚C
125

–30
0 0 0
0 –2 –4 –6 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 –1 –2 –3
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚ C/W)

(V C E =–4V) (V C E =–4V)
40,000 50000 4
125˚C
DC C urrent G ain h FE

Transient Thermal Resistance

Typ
DC Cur rent Gain h FE

25˚C

10000
10,000 –30˚C 1

5000
5,000 0.5

2,000 1000 0.2

–0.2 –0.5 –1 –5 –8 –0.2 –0.5 –1 –5 –8 1 5 10 50 100 500 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
100 –20 80

–10 10
10
M aximum Po wer Dissipation P C (W)

m
80 0m s
Cut -off Fre quen cy f T ( MH Z )

–5 D s
60
W

Typ C
ith
Collector Curre nt I C (A)

In
fin

60
ite
he

–1 40
at
si
nk

40
–0.5

Without Heatsink 20
20 Natural Cooling

–0.1
Without Heatsink
3.5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 8 –2 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

47
 (7 0 Ω ) E

Darlington
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390)
2SB1560 B

Equivalent circuit C

Application : Audio, Series Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
4.8±0.2
µA 15.6±0.4

5.0±0.2
VCBO –160 V ICBO VCB=–160V –100max

2.0

1.8
9.6 2.0±0.1

VCEO –150 V IEBO VEB=–5V –100max µA

VEBO –5 V V(BR)CEO IC=–30mA –150min V

19.9±0.3

4.0
IC –10 A hFE VCE=–4V, IC=–7A 5000min∗ a ø3.2±0.1
b
IB –1 A VCE(sat) IC=–7A, IB=–7mA –2.5max V
PC 100(Tc=25°C) W VBE(sat) IC=–7A, IB=–7mA –3.0max V
2

4.0max
20.0min
Tj 150 °C fr VCE=–12V, IE=2A 50typ MHz
3
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 230typ pF 1.05 +0.2 0.65 +0.2
-0.1 -0.1

∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)

5.45±0.1 5.45±0.1 1.4
■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
–70 10 –7 –10 5 –7 7 0.8typ 3.0typ 1.2typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

A (V C E =–4V)
Collector-Emitter Saturation Voltage V C E (s at ) (V )

–10 . 5m –3 –10
–2 mA
mA

– 2 .0
–10

–1 .5m A

–8 –1. 2mA –8

Collector Current I C (A)

–1.0 mA
Collector Current I C (A)

–2
–6 –0.8m A –6
–10A
–0.6m A
–7A

mp)

)
Temp
)
–4 –4

Temp
I B =–0.4mA I C =–5A

e Te
–1

(Case
(Cas

(Case
125˚C
–2 –2

–30˚C
25˚C
0 0 0
0 –2 –4 –6 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 –1 –2 –2.5
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a ( ˚ C/W)

(V C E =–4V) (V C E =–4V)
40,000 50000 3

125˚C
DC Curr ent Gain h F E

DC Curr ent Gain h F E

Transient Thermal Resistance

Typ

10000 25˚C 1
10,000

5000 –30˚C 0.5

5,000

1000

1,000 500 0.1

–0.2 –0.5 –1 –5 –10 –0.2 –0.5 –1 –5 –10 1 5 10 50 100 500 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
100 –30 100

10
Maxim um Power Dissipation P C (W)

10 m
80 –10 0m s
Cut- off F req uency f T (M H Z )

s
W

–5 DC
ith
Co lle ctor Cu rre nt I C ( A)

In
fin

60 Typ
ite
he

50
at

–1
si
nk

40
–0.5

Without Heatsink
20 Natural Cooling

–0.1
Without Heatsink
3.5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 10 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

48
 (7 0 Ω ) E

Darlington
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401)
2SB1570 B

Equivalent circuit C

Application : Audio, Series Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
Symbol Ratings Unit Symbol Conditions Ratings Unit
36.4±0.3 6.0±0.2
VCBO –160 V ICBO VCB=–160V –100max µA
24.4±0.2 2.1
VCEO –150 V IEBO VEB=–5V –100max µA 2-ø3.2±0.1 9

VEBO –5 V V(BR)CEO IC=–30mA –150min V

7
5000min∗

21.4±0.3
IC –12 A hFE VCE=–4V, IC=–7A a
IB –1 A VCE(sat) IC=–7A, IB=–7mA –2.5max V b

PC 150(Tc=25°C) W VBE(sat) IC=–7A, IB=–7mA –3.0max V

2

4.0max
20.0min
Tj 150 °C fT VCE=–12V, IE=2A 50typ MHz 3
230typ 0.65 +0.2
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz pF 1.05 +0.2
-0.1
-0.1

∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 5.45±0.1 3.0 +0.3
-0.1

■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 18.4g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
–70 10 –7 –10 5 –7 7 0.8typ 3.0typ 1.2typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )

–12 –3 –12
A
0 m –2 .0 m A
–1
–2 .0m A
–10 –10

Collector Current I C (A)

–1.5 mA
Collector Current I C (A)

–8 –1.2m A –2 –8
–1.0 mA
–0.8m A –10A
–6 –6

mp)
–0.6mA –7A

)
mp)
Temp
e Te
I C =–5A

e Te
–4 –1 –4
I B =–0.4mA

(Cas

(Case
(Cas
125˚C

–30˚C
25˚C
–2 –2

0 0 0
0 –2 –4 –6 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 –1 –2 –2.5
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =–4V) (V C E =–4V)
40,000 50000 2
125˚C
D C Cur r ent Gai n h F E

D C Cur r ent Gai n h F E

Transient Thermal Resistance

Typ 1
25˚C
10,000 10000
–30˚C 0.5
5,000 5000

0.1

1000
1,000 800
–0.2 –0.5 –1 –5 –10–12 –0.2 –0.5 –1 –5 –10 –12 1 5 10 50 100 500 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
100 –30 160

10
M aximu m Power Dissip ation P C (W)

–10 m
80 10 s
Cut- off F re quen cy f T (MH Z )

0m 120
W

–5 s
Collecto r Cur rent I C (A)

ith

DC
In
fin

60 Typ
ite
he

80
at

–1
si
nk

40
–0.5

Without Heatsink 40
20 Natural Cooling

–0.1
Without Heatsink
5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 10 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

49
 (7 0 Ω ) E

Darlington 2SB1587 B

Equivalent circuit C

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2438) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol Ratings Unit Symbol Conditions Ratings Unit

0.8±0.2
15.6±0.2 5.5±0.2
VCBO –160 V ICBO VCB=–160V –100max µA 3.45 ±0.2

VCEO –150 V IEBO VEB=–5V –100max µA

5.5
9.5±0.2
VEBO –5 V V(BR)CEO IC=–30mA –150min V

23.0±0.3
IC –8 A hFE VCE=–4V, IC=–6A 5000min∗ ø3.3±0.2
a
IB –1 A VCE(sat) IC=–6A, IB=–6mA –2.5max V

1.6
b

3.0
PC 75(Tc=25°C) W VBE(sat) IC=–6A, IB=–6mA –3.0max V

3.3
Tj 150 °C fT VCE=–12V, IE=1A 65typ MHz 1.75 0.8

16.2
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 160typ pF 2.15
1.05 +0.2
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
-0.1

5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
■Typical Switching Characteristics (Common Emitter) 1.5 4.4 1.5

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
B C E
–60 10 –6 –10 5 –6 6 0.7typ 3.6typ 0.9typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

A
m

(V C E =–4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )
.5
mA

–8 –3 –8
–2

mA A
–2.0 – 1 .8 m
–10

A
– 1 .5 m
–1. 3m A

Collector Current I C (A)

–6 –1 .0 mA –6
Collector Current I C (A)

–0.8m A –2 –8A

–0.5m A –6A
–4 –4

p)

mp)
I C =–4A

Tem

)
emp
e Te
I B =–0.3mA –1

se

se T
(Ca

Cas
–2 –2

(Ca
˚C

˚C (
125

25˚C
–30
0 0 0
0 –2 –4 –6 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 –1 –2 –3
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =–4V) (V C E =–4V)
40,000 50000 4
125˚C
DC Curr ent Gain h F E

Typ
DC C urrent G ain h FE

Transient Thermal Resistance

25˚C

10000
10,000 –30˚C 1

5000
5,000 0.5

2,000 1000 0.2

–0.2 –0.5 –1 –5 –8 –0.2 –0.5 –1 –5 –8 1 5 10 50 100 500 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
100 –20 80

–10 10
10
M aximum Po wer Dissipat io n P C (W)

m
80 0m s
Cut- off F req uenc y f T (MH Z )

–5 D s 60
C
W

Typ
ith
Collecto r Cur rent I C (A)

In
fin

60
ite
he

–1 40
at
si
nk

40 –0.5

Without Heatsink 20
20 Natural Cooling

–0.1
Without Heatsink
3.5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 8 –2 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

50
 (7 0 Ω ) E

Darlington 2SB1588 B

Equivalent circuit C

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2439) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol Ratings Unit Symbol Conditions Ratings Unit

0.8±0.2
15.6±0.2 5.5±0.2
VCBO –160 V ICBO VCB=–160V –100max µA 3.45 ±0.2

VCEO –150 V IEBO VEB=–5V –100max µA

5.5
9.5±0.2
VEBO –5 V V(BR)CEO IC=–30mA –150min V

23.0±0.3
IC –10 A hFE VCE=–4V, IC=–7A 5000min∗ ø3.3±0.2
a
IB –1 A VCE(sat) IC=–7A, IB=–7mA –2.5max V

1.6
b

3.0
PC 80(Tc=25°C) W VBE(sat) IC=–7A, IB=–7mA –3.0max V

3.3
Tj 150 °C fT VCE=–12V, IE=2A 50typ MHz 1.75 0.8

16.2
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 230typ pF 2.15
1.05 +0.2
-0.1
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
5.45±0.1 5.45±0.1 0.65 +0.2
-0.1 3.35
■Typical Switching Characteristics (Common Emitter) 1.5 4.4 1.5

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
B C E
–70 10 –7 –10 5 –7 7 0.8typ 3.0typ 1.2typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

A (V C E =–4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )

m
–10 .5 –3 –10
–2 mA
mA

– 2 .0
–10

–1 .5m A

–8 –1. 2mA –8

Collector Current I C (A)

–1.0 mA
Collector Current I C (A)

–2
–6 –0.8m A –6
–10A
–0.6m A
–7A

mp)

)
)
Temp
–4 –4

Temp
I C =–5A

e Te
I B =–0.4mA
–1

(Case
(Cas

(Case
125˚C
–2 –2

–30˚C
25˚C
0 0 0
0 –2 –4 –6 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 –1 –2 –2.5
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a ( ˚C/W)

(V C E =–4V) (V C E =–4V)
40,000 50,000 3

125˚C
DC Cur rent Gain h FE

DC Cur rent Gain h FE

Transient Thermal Resistance

Typ
1
10,000 10,000 25˚C

5,000 –30˚C 0.5

5,000

1,000

1,000 500 0.1

–0.2 –0.5 –1 –5 –10 –0.2 –0.5 –1 –5 –10 1 5 10 50 100 500 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
100 –30 80

10
Maxim um Power Dissip ation P C (W)

–10 10 m
80 0m s
Cut -off Fre quen cy f T (M H Z )

s
W

60
ith

–5
Co lle ctor Cu rre nt I C (A)

DC
In
fin

60 Typ
ite
he

40
at

–1
si
nk

40
–0.5

Without Heatsink 20
20 Natural Cooling

–0.1
Without Heatsink
3.5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 10 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

51
 (7 0 Ω ) E

Darlington 2SB1647 B

Equivalent circuit C

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2560) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
VCBO ICBO –100max µA 15.6±0.4 4.8±0.2

5.0±0.2
–150 V VCB=–150V

2.0

1.8
9.6 2.0±0.1
VCEO –150 V IEBO VEB=–5V –100max µA
VEBO –5 V V(BR)CEO IC=–30mA –150min V

19.9±0.3

4.0
IC –15 A hFE VCE=–4V, IC=–10A 5000min∗ a ø3.2±0.1

IB VCE(sat) –2.5max b
–1 A IC=–10A, IB=–10mA V
PC 130(Tc=25°C) W VBE(sat) IC=–10A, IB=–10mA –3.0max V
2

4.0max
20.0min
Tj 150 °C fT VCE=–12V, IE=2A 45typ MHz
3
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 320typ pF
1.05 +0.2
-0.1 0.65 +0.2
-0.1

∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)

5.45±0.1 5.45±0.1 1.4
■Typical Switching Characteristics (Common Emitter) B C E
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
–40 4 10 –10 5 –10 10 0.7typ 1.6typ 1.1typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

–50mA
–10mA
–3mA (V C E =–4V)
Collector-Emitter Saturation Voltage V C E (s at) (V)

–15 –1.5mA –3 –15

A
m
–2

–1 .0m A

Collector Current I C (A)

–0.8 mA
Collector Current I C (A)

–10 –2 –10
I C =–15A
–0. 5m A

p)
Tem

)
I C =–1 0A

emp

mp)
se

se T
I B =–0.3mA

(Ca

e Te
I C =–5A

(Ca
–5 –1 –5

˚C

Cas
125

25˚C

˚C (
–30
0 0 0
0 –2 –4 –6 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 –1 –2 –3
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚ C/ W)

(V C E =–4V) (V C E =–4V)
50,000 50000 3
125˚C
DC C urrent G ain h FE

DC C urrent G ain h FE

Transient Thermal Resistance

Typ 25˚C
1
–30˚C
10,000 10000

0.5
5,000 5000

1,000 1000 0.1

–0.2 –0.5 –1 –5 –10 –15 –0.2 –0.5 –1 –5 –10 –15 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
60 –50 130

10
M aximum Po wer Dissipat io n P C (W)

10 m
0m s
Cut -off Fre quen cy f T (MH Z )

–10 DC s 100
W
ith
Collect or Cur ren t I C ( A)

40 –5
In
fin
ite
he
at
si
nk

–1
50
20 –0.5
Without Heatsink
Natural Cooling

–0.1 Without Heatsink

3.5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 10 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

52
 ( 7 0Ω ) E

Darlington 2SB1648 B

Equivalent circuit C

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
Symbol Ratings Unit Symbol Conditions Ratings Unit
VCBO –150 V ICBO VCB=–150V –100max µA 36.4±0.3 6.0±0.2

VCEO –150 V IEBO VEB=–5V –100max µA 2-ø3.2±0.1

24.4±0.2 2.1
9
VEBO –5 V V(BR)CEO IC=–30mA –150min V
5000min∗

7
IC –17 A hFE VCE=–4V, IC=–10A

21.4±0.3
a
IB –1 A VCE(sat) IC=–10A, IB=–10mA –2.5max V b
PC 200(Tc=25°C) W VBE(sat) IC=–10A, IB=–10mA –3.0max V
2
Tj 150 fT VCE=–12V, IE=2A 45typ MHz

4.0max
20.0min
°C
3
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 320typ pF 0.65 +0.2
-0.1
1.05 +0.2
-0.1

∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)

5.45±0.1 5.45±0.1 3.0 +0.3
-0.1

■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 18.4g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
–40 4 –10 –10 5 –10 10 0.7typ 1.6typ 1.1typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

A
0m

(V C E =–4V)
–1

Collector-Emitter Saturation Voltage V C E (s at) (V)

–17 –3mA –2mA –3 17

mA

–1 .5 m A
–50

–15 15

Collector Current I C (A)

–1.0 mA
Collector Current I C (A)

)
mp
–0.8 mA –2

Te
I C =–15A
–10 10

se
(Ca
–0.5mA
I C =–1 0A

5˚C

p)

)
emp
Tem
12

eT
I B =–0.3mA I C =–5A

ase
–1

Cas
–5 5

C (C

˚C (
25˚

–30
0 0 0
0 –2 –4 –6 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 –1 –2 –3
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a ( ˚C/W)

(V C E =–4V) (V C E =–4V)
50,000 50000 2
125˚C
DC Curr ent Gain h FE

DC Curr ent Gain h FE

Transient Thermal Resistance

Typ 25˚C 1

–30˚C
10,000 10000
0.5

5,000 5000

1,000 1000 0.1

–0.2 –0.5 –1 –5 –10 –17 –0.2 –0.5 –1 –5 –10 –17 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
60 –50 200

10
10 m
Maxim um Power Dissip ation P C (W)

0m s
s 160
–10
Cut- off F req uenc y f T (MH Z )

DC
W
ith
Co lle ctor Cu rre nt I C (A)

40 –5
In
fin

120
ite
he
at
si
nk

–1
80
20 –0.5
Without Heatsink
Natural Cooling
40

–0.1
Without Heatsink
5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 10 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

53
 (7 0 Ω ) E

Darlington 2SB1649 B

Equivalent circuit C

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol Ratings Unit Symbol Conditions Ratings Unit

0.8±0.2
15.6±0.2 5.5±0.2
VCBO –150 V ICBO VCB=–150V –100max µA 3.45 ±0.2

VCEO –150 V IEBO VEB=–5V –100max µA

5.5
9.5±0.2
VEBO –5 V V(BR)CEO IC=–30mA –150min V

23.0±0.3
IC –15 A hFE VCE=–4V, IC=–10A 5000min∗ ø3.3±0.2
a
IB VCE(sat) IC=–10A, IB=–10mA –2.5max V

1.6
–1 A b

3.0
PC 85(Tc=25°C) W VBE(sat) IC=–10A, IB=–10mA –3.0max V

3.3
Tj 150 °C fT VCE=–12V, IE=2A 45typ MHz 1.75 0.8

16.2
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 320typ pF 2.15
+0.2
1.05 -0.1
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
5.45±0.1 5.45±0.1 0.65 +0.2
-0.1 3.35
■Typical Switching Characteristics (Common Emitter) 1.5 4.4 1.5
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
B C E b. Lot No.
–40 4 –10 –10 5 –10 10 0.7typ 1.6typ 1.1typ

I C – V CE Characteristics (Typical) V CE ( sa t ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

–50mA
–10mA
–3mA (V CE =–4V)
Collector-Emitter Saturation Voltage V C E (s at) (V)

–15 –1.5mA –3 –15

A
m
–2

–1 .0m A

Collector Current I C (A)

–0.8 mA
Collector Current I C (A)

–10 –2 –10
I C =–15A
–0. 5m A

p)
Tem

)
I C =–1 0A

emp

mp)
se

seT
I B =–0.3mA

(Ca

eT e
I C =–5A

(Ca
–5 –1 –5

˚C

Cas
125

25˚C

˚C (
–30
0 0 0
0 –2 –4 –6 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 –1 –2 –3
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚C /W)

(V C E =–4V) (V C E =–4V)
50,000 50000 3
125˚C
DC Curr ent Gain h F E

DC Curr ent Gain h F E

Transient Thermal Resistance

Typ 25˚C
1
–30˚C
10,000 10000

0.5
5,000 5000

1,000 1000 0.1

–0.2 –0.5 –1 –5 –10 –15 –0.2 –0.5 –1 –5 –10 –15 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
60 –50 100

10
10 m
Maxim um Power Dissipation P C (W)

0m s
s 80
Cut- off F req uency f T (M H Z )

–10 DC
Collect or Cur re nt I C ( A)

40 –5
ith
In

60
fin
ite
he
at

–1
si
nk

40
20 –0.5
Without Heatsink
Natural Cooling
20

–0.1
Without Heatsink
3.5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 10 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

54
 ( 7 0Ω ) E

Darlington 2SB1659 B

Equivalent circuit C

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2589) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-25(TO220)
Symbol Ratings Unit Symbol Conditions Ratings Unit
10.2±0.2 4.8±0.2

3.0±0.2
VCBO –110 V ICBO VCB=–110V –100max µA 2.0±0.1

VCEO –110 V IEBO VEB=–5V –100max µA

VEBO –5 V V(BR)CEO IC=–30mA –110min V

16.0±0.7
IC –6 A hFE VCE=–4V, IC=–5A 5000min∗

8.8±0.2
a ø3.75±0.2

IB –1 VCE(sat) IC=–5A, IB=–5mA –2.5max V b

A
PC 50(Tc=25°C) W VBE(sat) IC=–5A, IB=–5mA –3.0max V 1.35

4.0max
12.0min
Tj 150 °C fT VCE=–12V, IE=0.5A 100typ MHz
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 110typ pF 0.65 +0.2
-0.1

∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)

2.5 2.5 1.4
■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
–30 6 –5 –10 5 –5 5 1.1typ 3.2typ 1.1typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sa t ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

A

A
m

m
.5 (V CE =–4V)
–1

–6 –0 –3 –6
A
Collector-Emitter Saturation Voltage V C E (s at) (V)
A

.4m
–0 .3 m A
–5m

–0

–0. 2m A

Collector Current I C (A)

Collector Current I C (A)

–4 –2 –4
–5A

p)
I B =–0. 1mA I C =–3A

Tem

)
emp
mp)
se

eT e
–2 –1 –2

seT
(Ca

Cas
(Ca
˚C
125

˚C (
25˚C
–30
0 0 0
0 –2 –4 –6 –0.1 –0.5 –1 –5 –10 –50 –100 0 –1 –2 –3
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =–4V) (V C E =–4V)
40000 5
50000
125˚C
Typ
DC C urrent G ain h FE

25˚C
DC Curr ent Gain h F E

Transient Thermal Resistance

10000 10000
–30˚C
5000 5000

1000 1
1000
500
500
0.5
200 100 0.4
–0.02 –0.05 –0.1 –0.5 –1 –5 –6 –0.02 –0.05 –0.1 –0.5 –1 –5 –6 1 10 100 1000 2000

Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
120 50
Ma ximum Po we r Dissipatio n P C (W)

100 Typ
40
Cu t-off Fr eque ncy f T (MH Z )

W
ith

80
In
fin

30
ite
he

60
at
si
nk

20
40

10
20

Without Heatsink
2
0 0
0.02 0.05 0.1 0.5 1 5 6 0 25 50 75 100 125 150

Emitter Current I E (A) Ambient Temperature Ta(˚C)

55
 (7 0 Ω ) E

Darlington 2SB1685 B

Equivalent circuit C

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2641) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
4.8±0.2
µA 15.6±0.4

5.0±0.2
VCBO –110 V ICBO VCB=–110V –100max

2.0

1.8
9.6 2.0±0.1
VCEO –110 V IEBO VEB=–5V –100max µA
VEBO –5 V V(BR)CEO IC=–30mA –110min V

19.9±0.3

4.0
IC –6 A hFE VCE=–4V, IC=–5A 5000min∗ a ø3.2±0.1
b
IB –1 A VCE(sat) IC=–5A, IB=–5mA –2.5max V
PC 60(Tc=25°C) W VBE(sat) IC=–5A, IB=–5mA –3.0max V
2

4.0max
20.0min
Tj 150 °C fT VCE=–12V, IE=0.5A 100typ MHz
3
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 110typ pF 1.05 +0.2
-0.1 0.65 +0.2
-0.1

∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)

5.45±0.1 5.45±0.1 1.4
■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
–30 6 –5 –10 5 –5 5 1.1typ 3.2typ 1.1typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

A
m 5mA (V C E =–4V)
–1 –0.
Collector-Emitter Saturation Voltage V C E (s at ) (V )

–6 –3 –6
A
A

.4m
–0 .3 m A
–5m

–0

Collector Current I C (A)

–0. 2m A
Collector Current I C (A)

–4 –2 –4

–5A

p)
Tem

)
emp
mp)
I B =–0. 1mA

se
I C =–3A

se T
e Te
(Ca

(Ca
(Cas
–2 –1 –2

˚C
125

25˚C
–30˚C
0 0 0
0 –2 –4 –6 –0.1 –0.5 –1 –5 –10 –50 –100 0 –1 –2 –3
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =–4V) (V C E =–4V)
50000 50000 5
125˚C
Transient Thermal Resistance
D C Cur r ent Gai n h F E

D C Cur r ent Gai n h F E

Typ 25˚C
10000 10000
–30˚C
5000 5000

1000 1000 1
500 500

0.5
100 100
–0.01 –0.05 –0.1 –0.5 –1 –5 –6 –0.01 –0.05 –0.1 –0.5 –1 –5 –6 1 5 10 50 100 500 1000 2000

Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
120 –20 60

Typ –10
Maxim um Power Dissipation P C (W)

100
–5 10
m
Cut-o ff Fr equ ency f T (M H Z )

10 s
ith
Co lle ctor Cu rre nt I C (A)

0m
80 s 40
In

DC
fin
ite
he

–1
60
at
si

–0.5
nk

40 20

–0.1 Without Heatsink

20 Natural Cooling
Without Heatsink
3.5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 6 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

56
 (7 0 Ω ) E

Darlington 2SB1686 B

Equivalent circuit C

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2642) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol Ratings Unit Symbol Conditions Ratings Unit
4.2±0.2
µA
10.1±0.2

4.0±0.2
VCBO –110 V ICBO VCB=–110V –100max 2.8 c0.5

VCEO –110 V IEBO VEB=–5V –100max µA

8.4±0.2
VEBO –5 V V(BR)CEO IC=–30mA –110min V

16.9±0.3
IC –6 A hFE VCE=–4V, IC=–5A 5000min∗ a
ø3.3±0.2

0.8±0.2
IB –1 VCE(sat) IC=–5A, IB=–5mA –2.5max b
A V
PC 30(Tc=25°C) W VBE(sat) IC=–5A, IB=–5mA –3.0max V

±0.2
3.9
Tj 150 °C fT VCE=–12V, IE=0.5A 100typ MHz

13.0min
1.35±0.15
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 110typ pF 1.35±0.15

∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
B C E
–30 6 –5 –10 5 –5 5 1.1typ 3.2typ 1.1typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

A

A
m

5m (V C E =–4V)
–1

.
Collector-Emitter Saturation Voltage V C E (s at) (V )

–6 –0 –3 –6
mA
A

.4
–0 .3 m A
–5m

–0

Collector Current I C (A)

–0. 2m A
Collector Current I C (A)

–4 –2 –4

–5A

p)
Tem

)
emp
mp)
I B =–0. 1mA

se
I C =–3A

se T
e Te
(Ca

(Ca
(Cas
–2 –1 –2

˚C
125

25˚C
–30˚C
0 0 0
0 –2 –4 –6 –0.1 –0.5 –1 –5 –10 –50 –100 0 –1 –2 –3
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚ C/W)

(V C E =–4V) (V C E =–4V)
50000 50000 5.0

125˚C
D C Cur r ent Gai n h F E

D C Cur r ent Gai n h F E

Transient Thermal Resistance

Typ 25˚C
10000 10000
–30˚C
5000 5000

1.0
1000 1000
500 500
0.5

100 100 0.3

–0.01 –0.05 –0.1 –0.5 –1 –5 –6 –0.01 –0.05 –0.1 –0.5 –1 –5 –6 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
120 –20 30

–10
M aximu m Power Dissip ation P C (W)

100 Typ 10
m
–5 10 s
Cut-o ff Fr equ ency f T (MH Z )

0m
ith
Co lle ctor Cu rren t I C (A)

s
80 D 20
In

C
fin
ite
he

60
at

–1
si
nk

–0.5
40 10

Without Heatsink
Natural Cooling
20
–0.1 Without Heatsink
2
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 6 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

57
 (7 0 Ω ) E

Darlington
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2643)
2SB1687 B

Equivalent circuit C

Application : Audio, Series Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit

0.8±0.2
15.6±0.2 5.5±0.2
VCBO –110 V ICBO VCB=–110V –100max µA 3.45 ±0.2

VCEO –110 V IEBO VEB=–5V –100max µA

5.5
9.5±0.2
VEBO –5 V V(BR)CEO IC=–30mA –110min V

23.0±0.3
IC –6 A hFE VCE=–4V, IC=–5A 5000min∗ ø3.3±0.2
a
IB –1 VCE(sat) IC=–5A, IB=–5mA –2.5max V

1.6
A b

3.0
PC 60(Tc=25°C) W VBE(sat) IC=–5A, IB=–5mA –3.0max V

3.3
Tj 150 °C fT VCE=–12V, IE=0.5A –100typ MHz 1.75 0.8

16.2
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz –110typ pF 2.15
+0.2
1.05
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
-0.1

5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
■Typical Switching Characteristics (Common Emitter) 1.5 4.4 1.5

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
B C E
–30 6 –5 –10 5 –5 5 1.1typ 3.2typ 1.1typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

A

A
m

5 m (V C E =–4V)
–1

0.
Collector-Emitter Saturation Voltage V C E (s at) (V )

–6 – –3 –6
mA
A

.4
–0 .3 m A
–5m

–0

Collector Current I C (A)

–0. 2m A
Collector Current I C (A)

–4 –2 –4

–5A

p)
Tem

)
emp
mp)
I B =–0. 1mA

se
I C =–3A

se T
e Te
(Ca

(Ca
(Cas
–2 –1 –2

˚C
125

25˚C
–30˚C
0 0 0
0 –2 –4 –6 –0.1 –0.5 –1 –5 –10 –50 –100 0 –1 –2 –3
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a (˚ C/W)

(V C E =–4V) (V C E =–4V)
50000 50000 5

125˚C
DC Cur rent Gain h F E

DC Cur rent Gain h F E

Transient Thermal Resistance

Typ 25˚C
10000 10000
–30˚C
5000 5000

1000 1000 1
500 500

0.5
100 100
–0.01 –0.05 –0.1 –0.5 –1 –5 –6 –0.01 –0.05 –0.1 –0.5 –1 –5 –6 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
120 –20 60

Typ –10
Ma xim um Powe r Dissipation P C ( W)

100
–5 10
m
s
Cut- off Fr equ ency f T (M H Z )

10
ith

0m
Collector Curre nt I C (A)

80 s 40
In

DC
fin
ite
he

–1
60
at
si
nk

–0.5

40 20

Without Heatsink
–0.1 Natural Cooling
20
Without Heatsink
3.5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 6 –5 –10 –50 –100 –150 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

58
 2SC2023
Silicon NPN Triple Diffused Planar Transistor Application : Series Regulator, Switch, and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-25(TO220)
Symbol Ratings Unit Symbol Conditions Ratings Unit
10.2±0.2 4.8±0.2

3.0±0.2
VCBO 300 V ICBO VCB=300V 1.0max mA 2.0±0.1

VCEO 300 V IEBO VEB=6V 1.0max mA

16.0±0.7
VEBO 6 V V(BR)CEO IC=25mA 300min V

8.8±0.2
a ø3.75±0.2
IC 2 A hFE VCE=4V, IC=0.5A 30min
b
IB 0.2 A VCE(sat) IC=1.0A, IB=0.2A 1.0max V
PC 40(Tc=25°C) W fT VCE=12A, IE=–0.2A 10typ MHz 1.35

4.0max
12.0min
Tj 150 °C COB VCB=10V, f=1MHz 75typ pF
Tstg –55 to +150 °C 0.65 +0.2
-0.1

2.5 2.5 1.4

■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VB2 IB1 IB2 ton tstg tf Weight : Approx 2.6g

(V) (Ω) (A) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
100 100 1.0 –5 100 –200 0.3typ 4.0typ 1.0typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sa t ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V CE =4V)
2 3 2
Collector-Emitter Saturation Voltage V C E (s at) (V)

mA
B=
200
I

Collector Current I C (A)

Collector Current I C (A)

mp)

mp)
1 1

p)
e Te

ase Tem
ase Te
A /s to p

(Cas
I B =2 0m
1

25˚C (C
125˚C

–30˚C (C
2A
I C =1A
0 0 0
0 1 2 3 4 0 0.1 0.2 0.3 0 0.2 0.4 0.6 0.8 1.0
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚C /W )

(V C E =4V) (V C E =4V)
200 200 5
DC Cur rent Gain h F E

DC Cur rent Gain h F E

˚C
Transient Thermal Resistance

100 100 125

Typ

25˚C
50 50 ˚C 1
–30

0.5

10 10 0.2
3 10 100 1000 2000 3 5 10 50 100 500 1000 2000 1 10 100 1000 2000
Collector Current I C (mA) Collector Current I C (mA) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
20 10 40
Natural Cooling
5 Silicone Grease
Ma ximum Po we r Dissipatio n P C ( W)

Heatsink: Aluminum
1m
5m

in mm
20

Typ
Cut-o ff F requ ency f T (MH Z )

30
ms
s

D
Collector Curr ent I C (A)

C
ith

1
In
fin
ite

0.5
he

10 20
at

150x150x2
si
nk

100x100x2

0.1 10
Without Heatsink 50x50x2
0.05 Natural Cooling
Without Heatsink
2
0 0.02 0
–0.003 –0.01 –0.05 –0.1 –0.5 –1 2 10 100 500 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

59
 LAPT 2SC2837
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1186) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
15.6±0.4 4.8±0.2

5.0±0.2
µA

2.0

1.8
VCBO 150 V ICBO VCB=150V 100max 9.6 2.0±0.1

VCEO 150 V IEBO VEB=5V 100max µA

VEBO 5 V V(BR)CEO IC=25mA 150min V

19.9±0.3

4.0
a
IC 10 A hFE VCE=4V, IC=3V 50min∗ ø3.2±0.1
b
IB 2 A VCE(sat) IC=5A, IB=0.5A 2.0max V
PC 100(Tc=25°C) W fT VCE=12V, IE=–1A 70typ MHz 2

4.0max
20.0min
Tj 150 °C COB VCB=80V, f=1MHz 60typ pF 3

Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1 0.65 +0.2
-0.1

■Typical Switching Characteristics (Common Emitter) 5.45±0.1

B C E
5.45±0.1 1.4

VCC RL IC VB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g

(V) (Ω) (A) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
60 12 5 –5 500 –500 0.2typ 1.4typ 0.35typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V CE =4V)
10 3 10
Collector-Emitter Saturation Voltage V C E (s at) (V )

A A
400
m 300m

A
8 200m 8
A
160m

Collector Current I C (A)

Collector Current I C (A)

2
12 0m A
6 6
80mA

4 4

p)

p)
40mA

em
I C =10A

Tem
1

eT
as

se
(C
I B =20mA

(Ca
2 2

5˚C
5A

˚C
˚C
12

–30
0 0 0 25
0 1 2 3 4 0 0.5 1.0 1.5 2.0 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚ C/W)

(V C E =4V) (V C E =4V)
200 200 3
125˚C
D C Cur r ent Gai n h F E
DC Curr ent Gain h FE

Transient Thermal Resistance

Typ 25˚C
100 100
–30˚C 1

50 50
0.5

20 20 0.2
0.02 0.1 1 10 0.02 0.05 0.1 0.5 1 5 10 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
120 30 100
10

M aximum Power Dissipa ti on P C (W)

m

100
s

10
Cu t-off Fr eque ncy f T ( MH Z )

D
ith
Collector Curre nt I C ( A)

Typ C
80
In

5
fin
ite
he

60 50
at
si
nk

40 1

Without Heatsink
0.5 Natural Cooling
20

Without Heatsink
0.2 3.5
0 0
–0.02 –0.1 –1 –6 2 10 100 200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

60
 LAPT 2SC2921
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1215) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
Symbol Ratings Unit Symbol Conditions Ratings Unit
6.0±0.2
µA
36.4±0.3
VCBO 160 V ICBO VCB=160V 100max
24.4±0.2 2.1
VCEO 160 V IEBO VEB=5V 100max µA 2-ø3.2±0.1 9

VEBO 5 V V(BR)CEO IC=25mA 160min V

7
50min∗

21.4±0.3
IC 15 A hFE VCE=4V, IC=5A a
IB 4 A VCE(sat) IC=5A, IB=0.5A 2.0max V b

PC 150(Tc=25°C) W fT VCE=12V, IE=–2A 60typ MHz

2

4.0max
20.0min
Tj 150 °C COB VCB=10V, f=1MHz 200typ pF 3
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1
0.65 +0.2
-0.1

5.45±0.1 5.45±0.1 3.0 +0.3

-0.1
■Typical Switching Characteristics (Common Emitter)
B C E
VCC RL IC VB2 IB1 IB2 ton tstg tf Weight : Approx 18.4g
(V) (Ω) (A) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
60 12 5 –5 500 –500 0.2typ 1.5typ 0.35typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sa t ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V CE =4V)
15 3 15
Collector-Emitter Saturation Voltage V C E (s at) (V)

A mA mA
0m
A

60 500 400
0m

mA
75

300

A
200m

Collector Current I C (A)

Collector Current I C (A)

10 15 0m A 2 10

10 0m A

p)

p)
em
50mA

Tem
5 1 5

eT
as

se
(C

(Ca
I C =10A

5˚C
I B =20mA

˚C
12

˚C

–30
5A

25
0 0 0
0 1 2 3 4 0 0.2 0.4 0.6 0.8 1.0 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚ C/W)

(V C E =4V) (V C E =4V)
200 200 2
125˚C
DC Cur r ent Gai n h F E
DC Cur rent Gain h F E

Transient Thermal Resistance

100 Typ 1
100 25˚C

50 –30˚C 0.5

50

10 20 0.1
0.02 0.1 0.5 1 10 15 0.02 0.1 0.5 1 5 10 15 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
80 40 160

10
M aximu m Power Dissipat io n P C (W)

m
Typ s
Cut- off F re quen cy f T (MH Z )

60 D 120
10
W

C
Collector Curr ent I C (A)

ith
In
fin

5
ite
he

40 80
at
si
nk

20 1 40
Without Heatsink
Natural Cooling
0.5
Without Heatsink
5
0 0.3 0
–0.02 –0.1 –1 –10 2 10 100 200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

61
 LAPT 2SC2922
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1216) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
Symbol Ratings Unit Symbol Conditions Ratings Unit
36.4±0.3 6.0±0.2
VCBO 180 V ICBO VCB=180V 100max µA
24.4±0.2 2.1
VCEO 180 V IEBO VEB=5V 100max µA 2-ø3.2±0.1 9

VEBO 5 V V(BR)CEO IC=25mA 180min V

7
30min∗

21.4±0.3
IC 17 A hFE VCE=4V, IC=8V a
IB 5 A VCE(sat) IC=8A, IB=0.8A 2.0max V b

PC 200(Tc=25°C) W fT VCE=12V, IE=–2A 50typ MHz

2

4.0max
20.0min
Tj 150 °C COB VCB=10V, f=1MHz 250typ pF 3
0.65 +0.2
Tstg –55 to +150 °C ∗hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180) 1.05 +0.2
-0.1
-0.1

5.45±0.1 5.45±0.1 3.0 +0.3

-0.1
■Typical Switching Characteristics (Common Emitter)
B C E
VCC RL IC VB2 IB1 IB2 ton tstg tf Weight : Approx 18.4g
(V) (Ω) (A) (V) (A) (A) (µs) (µs) (µs) a. Part No.
40 4 10 –5 1 –1 0.2typ 1.3typ 0.45typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V CE =4V)
17 3 17
Collector-Emitter Saturation Voltage V C E (s at) (V )

1A mA mA
A

70
0 600 mA
1.5

500
15 15
A
400m

30 0mA

Collector Current I C (A)

Collector Current I C (A)

A 2
200m
10 10

100 mA

p)
em

p)
I C =10A

Tem
eT
1
5 5

as

se
50mA

(C

(Ca
5˚C
5A

˚C
I B =20mA 12
˚C

–30
25

0 0 0
0 1 2 3 4 0 0.2 0.4 0.6 0.8 1.0 0 1 2 2.4
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚ C/W)

(V C E =4V) (V C E =4V)
200 200 2

125˚C
DC Cur rent Gain h F E
DC C urrent G ain h FE

Transient Thermal Resistance

100 100 1
Typ 25˚C

–30˚C
50 50 0.5

10 10 0.1
0.02 0.1 0.5 1 5 10 17 0.02 0.1 0.5 1 5 10 17 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
80 50 200
10

Maxim um Power Dissip ation P C (W)

m

160
s
Cut -off Fre quen cy f T ( MH Z )

60 DC
W

Typ 10
ith
Collector Cur rent I C (A)

In
fin

5 120
ite
he

40
at
si
nk

80

1
20
Without Heatsink 40
0.5
Natural Cooling
Without Heatsink
5
0 0.2 0
–0.02 –0.1 –1 –5 –10 2 10 100 300 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

62
 2SC3179
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1262) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-25(TO220)
Symbol Ratings Unit Symbol Conditions Ratings Unit
10.2±0.2 4.8±0.2

3.0±0.2
VCBO 80 V ICBO VCB=80V 100max µA 2.0±0.1

VCEO 60 V IEBO VEB=6V 100max µA

16.0±0.7
VEBO 6 V V(BR)CEO IC=25mA 60min V

8.8±0.2
a ø3.75±0.2
IC 4 A hFE VCE=4V, IC=1V 40min
b
IB 1 A VCE(sat) IC=2A, IB=0.2A 0.6max V
PC 30(Tc=25°C) W fT VCE=12V, IE=–0.2A 15typ MHz 1.35

4.0max
12.0min
Tj 150 °C COB VCB=10V, f=1MHz 60typ pF
Tstg –55 to +150 °C 0.65 +0.2
-0.1

■Typical Switching Characteristics (Common Emitter) 2.5

B C E
2.5 1.4

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.6g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
20 10 2 10 –5 200 –200 0.2typ 1.9typ 0.29typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sa t ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V CE =4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )

4 4
A
A 80m
0 0m
60mA
=1
IB
1.0
3 3

Collector Current I C (A)

Collector Current I C (A)

40mA

30mA
2 2

p)

)
)
em

mp
mp
20mA 0.5

eT

Te
Te
3A

as

se
se
(C

(Ca
Ca
1 10mA 1

5˚C

C(
2A

˚C
12

25˚

–30
I C =1 A

0 0 0
0 1 2 3 4 0.005 0.01 0.05 0.1 0.5 1 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =4V) (V C E =4V)
500 200 5
DC Curr ent Gain h FE
D C Cur r ent Gai n h F E

125˚C
Transient Thermal Resistance

100
Typ 25˚C

100
–30˚C
50
50 1

20 20 0.5
0.01 0.1 0.5 1 4 0.02 0.1 0.5 1 4 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
40 10 30
1m
10

Maximu m Power Dissipa tion P C (W)

m

5
s
10
Cut- off F req uency f T (M H Z )

0m

30
W
s

ith
Co lle ctor Cu rre nt I C ( A)

D 20
In

C
fin
ite
he

20 Typ
at
si
nk

10

10 0.5 Without Heatsink

Natural Cooling
Without Heatsink
2
0 0.2 0
–0.005 –0.01 –0.1 –0.5 –1 –4 3 10 50 100 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

63
 LAPT 2SC3263
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1294) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
15.6±0.4 4.8±0.2

5.0±0.2
µA

2.0

1.8
VCBO 230 V ICBO VCB=230V 100max 9.6 2.0±0.1

VCEO 230 V IEBO VEB=5V 100max µA

VEBO V(BR)CEO IC=25mA 230min V

19.9±0.3
5 V

4.0
a
IC 15 A hFE VCE=4V, IC=5A 50min∗ ø3.2±0.1
b
IB 4 A VCE(sat) IC=5A, IB=0.5A 2.0max V
PC 130(Tc=25°C) W fT VCE=12V, IE=–2A 60typ MHz 2

4.0max
20.0min
Tj 150 °C COB VCB=10V, f=1MHz 250typ pF 3

Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), Y(70 to 140) 1.05 +0.2
-0.1 0.65 +0.2
-0.1

■Typical Switching Characteristics (Common Emitter) 5.45±0.1 5.45±0.1 1.4

B C E
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
60 12 5 10 –5 500 –500 0.30typ 2.40typ 0.50typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =4V)
15 3 15
Collector-Emitter Saturation Voltage V C E (s at) (V )

0A 5A A
0A

2. 1. 1.0
3.

mA
600
mA
400

Collector Current I C (A)

Collector Current I C (A)

10 2 10
A
200m

10 0m A

Tem )
p
p)
em

p)
Tem
eT
5 1 5
50mA I C =10A

as
se

se
(C
Ca

(Ca
5˚C

C(

˚C
12
I B =20mA

25˚

–30
5A

0 0 0
0 1 2 3 4 0 0.5 1.0 1.5 2.0 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚ C/W)

(V C E =4V) (V C E =4V)
200 200 3

125˚C
DC C urrent G ain h FE
DC Curr ent Gain h F E

Transient Thermal Resistance

100 100
Typ 25˚C
1
–30˚C
50 50
0.5

10 10 0.1
0.02 0.1 0.5 1 5 10 15 0.02 0.1 0.5 1 5 10 15 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
100 40 130

10
m
s
Maxim um Power Dissip ation P C (W)

80
10 100
Cut- off F req uenc y f T (MH Z )

DC
ith
Collector Curr ent I C (A)

Typ 5
In
fin

60
ite
he
at
si
nk

40 1 50

0.5
20 Without Heatsink
Natural Cooling

Without Heatsink
3.5
0 0.1 0
–0.02 –0.1 –1 –10 3 10 100 300 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

64
 LAPT 2SC3264
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1295) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
Symbol Ratings Unit Symbol Conditions Ratings Unit
36.4±0.3 6.0±0.2
VCBO 230 V ICBO VCB=230V 100max µA 24.4±0.2 2.1
VCEO 230 V IEBO VEB=5V 100max µA 2-ø3.2±0.1 9

VEBO 5 V V(BR)CEO IC=25mA 230min V

7
21.4±0.3
IC 17 A hFE VCE=4V, IC=5A 50min∗ a
IB 5 A VCE(sat) IC=5A, IB=0.5A 2.0max V b

PC 200(Tc=25°C) W fT VCE=12V, IE=–2A 60typ MHz 2

4.0max
20.0min
Tj 150 °C COB VCB=10V, f=1MHz 250typ pF 3
0.65 +0.2
∗hFE Rank O(50 to 100), Y(70 to 140)
-0.1
Tstg –55 to +150 °C 1.05 +0.2
-0.1

5.45±0.1 5.45±0.1 3.0 +0.3

-0.1

■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 18.4g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
60 12 5 10 –5 0.5 –0.5 0.30typ 2.40typ 0.50typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =4V)
17 3 17
Collector-Emitter Saturation Voltage V C E (s at) (V )

0 A 0A 1.5
A
3. 2.
A
15 1.0 15

A
600m

Collector Current I C (A)

Collector Current I C (A)

A
400m 2

10 10
A
200m

p)

mp)
10 0m A

em

e Te
eT
1

Cas
5 I C =10A 5

(Cas
50mA

˚C (

–30˚C
125
I B =20mA 5A 25˚C

0 0 0
0 1 2 3 4 0 0.5 1.0 1.5 2.0 0 1 2 3
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =4V) (V C E =4V)
200 200 3
125˚C
DC Curr ent Gain h FE

Transient Thermal Resistance

DC Curr ent Gain h FE

100 100
25˚C
Typ
1
–30˚C
50
50
0.5

10
10 0.1
0.02 0.1 0.5 1 5 10 17 0.02 0.1 0.5 1 5 10 17 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
100 40 200

10
m
s
Ma xim um Powe r Dissipat io n P C (W)

80 160
10 DC
Cut-o ff Fr eque ncy f T ( MH Z )

W
ith
Co lle ctor Cu rren t I C ( A)

Typ 5
In
fin

60 120
ite
he
at
si
nk

40 1 80

0.5
20 Without Heatsink
Natural Cooling 40

Without Heatsink
5
0 0.1
–0.02 –0.1 –1 –10 3 10 100 300 0
0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

65
 LAPT 2SC3284
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1303) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
15.6±0.4 4.8±0.2

5.0±0.2
µA

2.0

1.8
VCBO 150 V ICBO VCB=150V 100max 9.6 2.0±0.1

VCEO 150 V IEBO VEB=5V 100max µA

VEBO 150min V

19.9±0.3
5 V V(BR)CEO IC=25mA

4.0
a
IC 14 A hFE VCE=4V, IC=5A 50min∗ ø3.2±0.1
b
IB 3 A VCE(sat) IC=5A, IB=0.5A 2.0max V
PC 125(Tc=25°C) W fT VCE=12V, IE=–2A 60typ MHz 2

4.0max
20.0min
Tj 150 °C COB VCB=10V, f=1MHz 200typ pF 3

Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1 0.65 +0.2
-0.1

5.45±0.1 5.45±0.1 1.4

■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
60 12 5 10 –5 0.5 –0.5 0.2typ 1.5typ 0.35typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

A (V C E =4V)
14 0m 3 14
60 mA
Collector-Emitter Saturation Voltage V C E (s at) (V )

mA
A

0 400 A
0m

5 0 3 00m
75

12
A
200m

Collector Current I C (A)

Collector Current I C (A)

10
15 0m A
2

8 10 0m A

p)
p)
50mA 5

em

Tem
1

eT
4

se
as

(Ca
(C
I C =10A

5˚C
I B =20mA

˚C
˚C
12

–30
25
5A

0 0 0
0 1 2 3 4 0 0.2 0.4 0.6 0.8 1.0 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =4V) (V C E =4V)
200 200 3

125˚C
DC Cur rent Gain h FE
DC Curr ent Gain h F E

Transient Thermal Resistance

100 100 25˚C 1

Typ

–30˚C
0.5
50 50

20 20 0.1
0.02 0.1 0.5 1 5 10 14 0.02 0.1 0.5 1 5 10 14 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
80 40 130
1m
10 s
m
Maxim um Power Dissip ation P C (W)

10 s
Typ 0m 100
Cut-o ff F requ ency f T (MH Z )

60 10 s
W

D
Collector Curre nt I C ( A)

ith

C
In
fin

5
ite
he

40
at
si
nk

50
1
20
Without Heatsink
0.5 Natural Cooling

Without Heatsink
3.5
0 0.2 0
–0.02 –0.1 –1 –10 3 10 100 200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

66
 LAPT
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386/A)
2SC3519/3519A
Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Ratings Ratings
Symbol Unit Symbol Conditions Unit
2SC3519 2SC3519A 2SC3519 2SC3519A
15.6±0.4 4.8±0.2

5.0±0.2
µA

2.0

1.8
VCBO 160 180 V 100max 9.6 2.0±0.1
ICBO
VCEO 160 180 V VCB= 160 180 V
VEBO 5 V IEBO 100max µA

19.9±0.3
VEB=5V

4.0
a ø3.2±0.1
IC 15 A V(BR)CEO IC=25mA 160min 180min V
b
IB 4 A hFE VCE=4V, IC=5A 50min∗
PC 130(Tc=25°C) W VCE(sat) IC=5A, IB=0.5A 2.0max V 2

4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–2A 50typ MHz 3

Tstg –55 to +150 °C COB VCB=10V, f=1MHz 250typ pF 1.05 +0.2

-0.1 0.65 +0.2
-0.1

∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)

5.45±0.1 5.45±0.1 1.4
■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
0.2typ b. Lot No.
40 4 10 10 –5 1 –1 1.3typ 0.45typ

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =4V)
15 3 15
Collector-Emitter Saturation Voltage V C E (s at) (V )

A mA
A

m A
500 m
0m

6 00 400
70

mA
300

A
200m

Collector Current I C (A)

Collector Current I C (A)

10 2 10

10 0m A

p)

)
I C =10A

em

mp
5 1 5

eT

Te
50mA

as

se
(C

(Ca
C
5˚
I B =20mA 5A

˚C
12

˚C

–30
0 0 0 25
0 1 2 3 4 0 0.2 0.4 0.6 0.8 1.0 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =4V) (V C E =4V)
300 300 3
DC Cur rent Gain h FE
DC Curr ent Gain h F E

Transient Thermal Resistance

125˚C
100 100 1
Typ 25˚C
–30˚C 0.5
50 50

10 10 0.1
0.02 0.1 0.5 1 5 10 15 0.02 0.1 0.5 1 5 10 15 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
80 40 130

10
ms
M aximum Power Dissipa ti on P C (W)

10
100
Cut-o ff F requ ency f T (MH Z )

60 DC
W

Typ 5
ith
Co lle ctor Cu rr ent I C (A)

In
fin
ite
he

40
at

1
si
nk

Without Heatsink
0.5 Natural Cooling 50

1.2SC3519
20 2.2SC3519A
0.1

1 2 Without Heatsink
3.5
0 0.05 0
–0.02 –0.1 –1 –5 –10 5 10 50 100 200 0 25 50 75 100 125 150
Emitter C urrent I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

67
 2SC3678
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
15.6±0.4 4.8±0.2

5.0±0.2
µA

2.0
VCBO 900 ICBO 100max

1.8
V VCB=800V 9.6 2.0±0.1

VCEO 800 V IEBO VEB=7V 100max µA

VEBO 7 V V(BR)CEO IC=10mA 800min V

19.9±0.3

4.0
hFE 10 to 30 a
IC 3(Pulse6) A VCE=4V, IC=1A ø3.2±0.1
b
IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max V
PC 80(Tc=25°C) W VBE(sat) IC=1A, IB=0.2A 1.2max V 2

4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–0.3A 6typ MHz 3
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF 1.05 +0.2
-0.1 0.65 +0.2
-0.1

■Typical Switching Characteristics (Common Emitter) 5.45±0.1 5.45±0.1 1.4

B C E
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
250 250 1 10 –5 0.15 –0.5 1max 5max 1max b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
500mA 400mA (I C /I B =5) (V CE =4V)
3 3
Collector-Emitter Saturation Voltage V C E (s at) (V)
Base-Emitter Saturation Voltage V B E (s at) (V)

300mA
1 V B E (sat)

Collector Current I C (A)

p)
–55˚C (Case Tem
Collector Current I C (A)

200 mA
2 2
e Temp)
25˚C (Cas

mp)

mp)
Temp)

p)
e Te
100mA (Case

ase Tem
ase Te
125˚C

(Cas
e m p)

25˚C (C
1 1

125˚C
I B =50mA

–55˚C (C
eT
2 5 Cas

(
˚C

˚C
–55
V C E (sat) 5˚C
12
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 3 0 0.2 0.4 0.6 0.8 1. 0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚C /W )

(V C E =4V)
50 8 3
t on • t st g• t f ( µ s)

125˚C
5
t s tg
D C Cur r ent Gai n h F E

Transient Thermal Resistance

25˚C V C C 250V
I C :I B 1 :–I B2
=2:0.3:1Const.
1
Switching T im e

–55˚C
1
tf
10
0.5 0.5

t on
5 0.2 0.3
0.01 0.05 0.1 0.5 1 3 0.1 0.5 1 3 1 5 10 50 100 500 1000

Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
10 10 80

5 5
Maxim um Power Dissip ation P C (W)

10
0µ
60
W

s
ith
Collector Curr ent I C (A)

Collecto r Curr ent I C (A)

In
fin
ite
he

1 1 40
at
si
nk

Without Heatsink
0.5 0.5 Natural Cooling
Without Heatsink L=3mH
Natural Cooling IB2=–1.0A 20
Duty:less than 1%

Without Heatsink
0.1 3.5
0.1 0
50 100 500 1000 50 100 500 1000 0 25 50 75 100 12 5 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

68
 2SC3679
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) Application : Switching Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
15.6±0.4 4.8±0.2

5.0±0.2
2.0
µA

1.8
VCBO 900 V ICBO VCB=800V 100max 9.6 2.0±0.1

VCEO 800 V IEBO VEB=7V 100max µA

19.9±0.3
VEBO 7 V V(BR)CEO IC=10mA 800min V

4.0
a ø3.2±0.1
IC 5(Pulse10) A hFE VCE=4V, IC=2A 10 to 30
b
IB 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max V
PC 100(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A 1.2max V 2

4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–0.5A 6typ MHz 3

Tstg –55 to +150 °C COB VCB=10V, f=1MHz 75typ pF 1.05 +0.2

-0.1 0.65 +0.2
-0.1

■Typical Switching Characteristics (Common Emitter) 5.45±0.1

B C E
5.45±0.1 1.4

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
250 125 2 10 –5 0.3 –1 1max 5max 1max b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
700mA 600mA (I C /I B =5) (V CE =4V)
5 5
Collector-Emitter Saturation Voltage V C E (s at ) (V )
Base-Emitter Saturation Voltage V B E (s at) (V)

500mA

4 400 mA 4

Collector Current I C (A)

2
Collector Current I C (A)

300mA

3 3

mp)
200mA

)
Temp

p)
e Te

ase Tem
V B E (sat)

(Cas

(Case
2 1 2
I B =100mA –55˚C (Case Temp)

125˚C

–55˚C (C
25˚C (Case Temp)

25˚C
e Temp)
125˚C (Cas
m p)
C

1 1
–5 5 ˚C
25˚
Te

e
C as
V C E (sat) 125˚C (
0 0 0
0 1 2 3 4 0.03 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j - a ( ˚ C/W)

(V C E =4V)
50 10 2
t on• t s t g • t f (µ s)

5 t s tg
125˚C
DC Cur rent Gain h F E

V C C 250V
Transient Thermal Resistance

1
25˚C I C :I B1 :–I B 2
=2:0.3:1Const.
0.5
Swi tchi ng T im e

–55˚C
1 tf
10
0.5
t on

5 0.2 0.1
0.02 0.05 0.1 0.5 1 5 0.1 0.5 1 5 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 100

10 10
10 1m 10
10

m 0µ
M aximum Power Dissipa ti on P C (W)

s s s
µs

5 5
10
0m
W

s
ith
Collector Curre nt I C ( A)

Collector Curr ent I C (A)

DC

In
fin
( Tc

1 1
ite
=2

he
5

0.5 0.5 50
at
C)

si
nk

Without Heatsink
0.1 Without Heatsink 0.1 Natural Cooling
Natural Cooling L=3mH
0.05 0.05 IB2=–1.0A
Duty:less than1%

Without Heatsink
3.5
0.01 0.01 0
5 10 50 100 500 1000 50 100 500 1000 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

69
 2SC3680
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) Application : Switching Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
15.6±0.4 4.8±0.2

5.0±0.2
µA

2.0

1.8
VCBO 900 V ICBO VCB=800V 100max 9.6 2.0±0.1

VCEO 800 V IEBO VEB=7V 100max µA

VEBO 7 V V(BR)CEO IC=10mA 800min V

19.9±0.3

4.0
a
IC 7(Pulse14) A hFE VCE=4V, IC=3A 10 to 30 ø3.2±0.1
b
IB 3.5 A VCE(sat) IC=3A, IB=0.6A 0.5max V
PC 120(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A 1.2max V 2

4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–2A 6typ MHz 3
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 105typ pF 1.05 +0.2
-0.1 0.65 +0.2
-0.1

■Typical Switching Characteristics (Common Emitter) 5.45±0.1

B C E
5.45±0.1 1.4

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
250 83 3 10 –5 0.45 –1.5 1max 5max 1max b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V CE =4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )

7 7
1A
700m A
Base-Emitter Saturation Voltage V B E (s at) (V)

6 V B E (sat) 6
1
500mA

Collector Current I C (A)

–55˚C (C ase Temp)
Collector Current I C (A)

p)
300 mA ase Tem
4 25˚C (C 4

mp)

)
Temp

p)
)

e Te
200mA emp
ase T

ase Tem
(C
125˚C

(Cas

(Case
)
emp

I B =100mA

125˚C

–55˚C (C
eT

25˚C
2 2
as
(C
˚C

˚C
25

5
12
V C E (sat) 5˚C
–5
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 7 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j - a ( ˚ C/W)

(V C E =4V)
50 10 2
12
t on• t st g• t f (µ s)

5˚
25˚C C 5 t s tg
D C Cur r ent Gai n h F E

Transient Thermal Resistance

V C C 250V 1
I C :I B1 :I B2 =2:0.3:–1Const.
–55˚C
0.5
Swi tchi ng T im e

1 tf

10
0.5
t on

5 0.2 0.1
0.02 0.05 0.1 0.5 1 5 7 0.1 0.5 1 5 7 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 120

10 10
10 1m 0µ 10
m s
s
Ma ximum Po we r Dissipatio n P C ( W)

s 100
5 5
W
ith
Collecto r Cur rent I C (A)

Co lle ctor Cu rre nt I C ( A)

In
fin

1 1
ite
he

0.5 0.5
at
si
nk

50
Without Heatsink
0.1 Without Heatsink 0.1 Natural Cooling
Natural Cooling L=3mH
0.05 0.05 IB2=–1.0A
Duty:less than 1%

Without Heatsink
3.5
0.01 0.01 0
2 5 10 50 100 500 1000 50 100 500 1000 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

70
 2SC3830
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-25(TO220)
Symbol Ratings Unit Symbol Conditions Ratings Unit
10.2±0.2 4.8±0.2

3.0±0.2
VCBO 600 V ICBO VCB=600V 1max mA 2.0±0.1

VCEO 500 V IEBO VEB=10V 100max µA

VEBO 10 V(BR)CEO IC=25mA 500min V

16.0±0.7
V

8.8±0.2
10 to 30 a ø3.75±0.2
IC 6(Pulse12) A hFE VCE=4V, IC=2A
b
IB 2 A VCE(sat) IC=2A, IB=0.4A 0.5max V
PC 50(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A 1.3max V 1.35

4.0max
12.0min
Tj 150 °C fT VCE=12V, IE=–0.5A 8typ MHz
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 45typ pF 0.65 +0.2
-0.1

■Typical Switching Characteristics (Common Emitter) 2.5

B C E
2.5 1.4

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.6g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
200 100 2 10 –5 0.2 –0.4 1max 4.5max 0.5max b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V C E =4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )

6 2 6
1A 80 0m A
Base-Emitter Saturation Voltage V B E (s at) (V)

5 60 0m A 5

Collector Current I C (A)

Collector Current I C (A)

4 400 mA 4

300mA V B E (sat)
3 1 3
p)
200mA –55˚C (Case Tem

mp)
Temp)

)
m p)

25˚C (Case

mp

)
emp

e Te
Te
2 2
2 5 e Te

p)
ase Tem

se T
I B =100mA 125˚C (C

se

(Cas
(Ca
as
˚C

(Ca
(C

–55˚C
˚C
C
1 5˚ 1

25˚C
125
12 C
5˚
V C E (sat) –5
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚ C/W)

(V C E =4V)
50 7 4
t on• t s t g • t f (µ s)

5
125˚C
DC Cur rent Gain h F E

Transient Thermal Resistance

t s tg
25˚C V C C 200V
I C :I B1 :I B 2 =10:1:–2

–55˚C 1
Swi tchi ng T im e

1
0.5
t on
10
0.5
tf
5 0.1 0.3
0.02 0.05 0.1 0.5 1 5 6 0.2 0.5 1 5 6 1 10 100 1000

Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 50
10
10 0µ
s 10
M aximum Power Dissipa ti on P C (W)

5 5 40
1m

W
s
10

ith
Collect or Cur ren t I C (A)

Collector Curr ent I C (A)

ms

In
D

fin
C

30
ite

1 1
he
at

0.5 0.5
si
nk

20
Without Heatsink
Natural Cooling
0.1 Without Heatsink 0.1 L=3mH
Natural Cooling IB2=–0.5A 10
0.05 0.05 Duty:less than 1%

Without Heatsink
2
0.02 0.02 0
7 10 50 100 500 600 50 100 500 600 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

71
 2SC3831
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
15.6±0.4 4.8±0.2

5.0±0.2
2.0

1.8
VCBO 600 V ICBO VCB=600V 1max mA 9.6 2.0±0.1

VCEO 500 V IEBO VEB=10V 100max µA

19.9±0.3
VEBO 10 V V(BR)CEO IC=25mA 500min V

4.0
a ø3.2±0.1
IC 10(Pulse20) A hFE VCE=4V, IC=5A 10 to 30
b
IB 4 A VCE(sat) IC=5A, IB=1A 0.5max V
PC 100(Tc=25°C) W VBE(sat) IC=5A, IB=1A 1 . 3 max V 2

4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–1A 8typ MHz 3

Tstg –55 to +150 °C COB VCB=10V, f=1MHz 105typ pF 1.05 +0.2

-0.1 0.65 +0.2
-0.1

5.45±0.1 5.45±0.1 1.4

■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
200 40 5 10 –5 0.5 –1.0 1max 4.5max 0.5max b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V CE =4V)
10 10
Collector-Emitter Saturation Voltage V C E (s at ) (V )
A

1A
.2

800 mA
Base-Emitter Saturation Voltage V B E (s at) (V)
=1

V B E (sat)
IB

1
8 60 0m A 8

Collector Current I C (A)

e Temp)
–55˚C (Cas
Collector Current I C (A)

400 mA p)
6 ase Tem 6
25˚C (C

p)
Temp

mp)
(Case

Tem

)
125˚C

Temp
200mA
)

e Te
4
mp

se
Te

(Ca

(Cas

(Case
se

˚C
100mA
a

25˚C
(C

125
˚C

–55˚C
2 C
5˚ 2
25

12
C
5˚
V C E (sat) –5

0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =4V)
50 10 2
t on • t st g• t f (µ s)

125˚C 5
t s tg
D C Cur r ent Gai n h F E

Transient Thermal Resistance

25˚C 1
V C C 200V
I C :I B 1 :I B 2 =10:1:–2
–5 5˚C
0.5
Switching T im e

0.5 t on
10

tf
5 0.1 0.1
0.02 0.05 0.1 0.5 1 5 10 0.2 0.5 1 5 10 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
30 30 100
10
1m 0µ
s
10 s 10
Maxim um Power Dissipatio n P C ( W)

5 5
10

W
ms

ith
Collecto r Curr ent I C (A)

Co lle ctor Cu rr ent I C (A)

In
D

fin
C

ite

1 1
he

50
at
si

0.5 0.5
nk

Without Heatsink
Without Heatsink Natural Cooling
0.1 Natural Cooling 1 L=3mH
I B 2 =–0.5A
0.05 0.05 Duty:less than 1%

Without Heatsink
0.02 3.5
0.01 0
8 10 50 100 500 600 50 100 500 600 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

72
 2SC3832
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-25(TO220)
Symbol Ratings Unit Symbol Conditions Ratings Unit
10.2±0.2 4.8±0.2

3.0±0.2
VCBO 500 V ICBO VCB=500V 100max µA 2.0±0.1

VCEO 400 V IEBO VEB=10V 100max µA

V(BR)CEO

16.0±0.7
VEBO 10 V IC=25mA 400min V

8.8±0.2
a ø3.75±0.2
IC 7(Pulse14) A hFE VCE=4V, IC=3A 10 to 30
b
IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max V
PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A 1.3max V 1.35

4.0max
12.0min
Tj 150 °C fT VCE=12V, IE=–0.5A 10typ MHz
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF 0.65 +0.2
-0.1

2.5 2.5 1.4

■Typical Switching Characteristics (Common Emitter) B C E
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.6g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
200 66.7 3 10 –5 0.3 –0.6 1max 3max 0.5max b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V C E =4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )

7 7
60 0m A
Base-Emitter Saturation Voltage V B E (s at) (V)
A
0m

6 6
80

400mA
V B E (sat)

Collector Current I C (A)

Collector Current I C (A)

1
300mA
e Temp)
–55˚C (Cas
4 4
200mA e Temp)
25˚C (Cas

p)
Tem

)
mp)
emp
)
Temp
(Case
125˚C
p)

e Te
se

se T
2 5 Tem

(Ca
I B =100mA

(Cas
(Ca
2 2

˚C
e
˚C
as

125

25˚C

–55˚C
(C

C
5˚
12 C
5˚
V C E (sat) –5

0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 7 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚ C/W)

(V C E =4V)
50 10 4
t o n • t s t g• t f ( µ s)

125˚ C 5 t s tg
D C Cur r ent Gai n h F E

Transient Thermal Resistance

25˚C V C C 200V
I C :I B1 :–I B 2 =10:1:2
–30 ˚C
Sw it ching Time

1
1
0.5
t on
10
0.5
tf

5 0.1 0.3
0.02 0.05 0.1 0.5 1 5 7 0.2 0.5 1 5 1 10 100 1000

Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 50
10
0µ
10 s 10
Maxim um Power Dissipatio n P C ( W)

40
5
W

5
ith
Collecto r Curr ent I C (A)

Co lle ctor Cu rren t I C ( A)

In
fin

30
ite
he
at
si

1 1
nk

Without Heatsink 20
Natural Cooling
0.5 0.5
Without Heatsink L=3mH
Natural Cooling –IB2=1A
Duty:less than 1% 10

Without Heatsink
0.1 2
0.1 0
5 10 50 100 500 5 10 50 100 500 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

73
 2SC3833
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit 4.8±0.2
15.6±0.4

5.0±0.2
2.0

1.8
VCBO 500 V ICBO VCB=500V 100max µA 9.6 2.0±0.1

VCEO 400 V IEBO VEB=10V 100max µA

19.9±0.3
VEBO 10 V V(BR)CEO IC=25mA 400min V

4.0
a ø3.2±0.1
IC 12(Pulse24) A hFE VCE=4V, IC=7A 10 to 30
b
IB 4 A VCE(sat) IC=7A, IB=1.4A 0.5max V
PC 100(Tc=25°C) W VBE(sat) IC=7A, IB=1.4A 1.3max V 2

4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–1A 10typ MHz 3

Tstg –55 to +150 °C COB VCB=10V, f=1MHz 105typ pF 1.05 +0.2

-0.1 0.65 +0.2
-0.1

5.45±0.1 5.45±0.1 1.4

■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
200 28.5 7 10 –5 0.7 –1.4 1.0max 3.0max 0.5max b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V CE =4V)
Collector-Emitter Saturation Voltage V C E (s at ) (V )

12 12
A
1000m
Base-Emitter Saturation Voltage V B E (s at) (V)

80 0m A
10 10
V B E (sat)

Collector Current I C (A)

60 0m A
Collector Current I C (A)

1
8 8
Temp)
–55˚C (Case
400m A
e Temp)
6 25˚C (Cas 6

p)
mp)
Tem
emp )

)
ase T

Temp
e Te
)

(C
2 5 Temp

se
200mA 125˚C

(Ca
4 4

(Cas

(Case
˚C
e

˚C
as

25˚C
125
I B =100mA
(C

–55˚C
2 5˚ 2
12 C
5˚
V C E (sat) –5

0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) t on •t st g • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚ C/W)

(V C E =4V)
50 8 2
t o n • t s t g• t f ( µ s)

125˚C 5
t s tg
Transient Thermal Resistance
DC C urrent G ain h FE

1
25˚C V C C 200V
I C :I B1 :–I B2 =10:1:2
–30˚C 0.5
1
Swit ching Time

0.5
10 t on

tf
5 0.1 0.1
0.02 0.05 0.1 0.5 1 5 10 12 0.5 1 5 10 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
30 30 100
10
0µ
s
10 10
M aximu m Power Dissipat io n P C (W)
1ms
10

5 5
DC

ms

W
(T

ith
Collecto r Curr ent I C (A)

Co lle ctor Cu rr ent I C ( A)

c=

In
25

fin

1
ite
C

1
)

he

50
at

0.5 0.5
si
nk

Without Heatsink
0.1 Without Heatsink 0.1 Natural Cooling
Natural Cooling L=3mH
0.05 0.05 –IB2=1A
Duty:less than 1%

Without Heatsink
0.01 3.5
0.01 0
5 10 50 100 500 5 10 50 100 500 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

74
 2SC3834
Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) Application : Humidifier, DC-DC Converter, and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-25(TO220)
Symbol Ratings Unit Symbol Conditions Ratings Unit
10.2±0.2 4.8±0.2

3.0±0.2
VCBO 200 V ICBO VCB=200V 100max µA 2.0±0.1

VCEO 120 V IEBO VEB=8V 100max µA

16.0±0.7
VEBO 8 V V(BR)CEO IC=50mA 120min V

8.8±0.2
a ø3.75±0.2
IC 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220
b
IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max V
PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max V 1.35

4.0max
12.0min
Tj 150 °C fT VCE=12V, IE=–0.5A 30typ MHz
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 110typ pF 0.65 +0.2
-0.1

2.5 2.5 1.4

■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.6g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
50 16.7 3 10 –5 0.3 –0.6 0.5max 3.0max 0.5max b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V CE =4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )

7 2.6 7
m A A
200 1 50m
6 6
mA
100 2

Collector Current I C (A)

Collector Current I C (A)

5 5
60mA
A
4 40m 4

p)

mp)
Tem
5A

)
Temp
e Te
3 20 mA 3
3A

se
1
I C= 1

(Ca

(Cas

(Case
˚C
A

2 2

25˚C
125
I B =10mA

–30˚C
1 1

0 0 0
0 1 2 3 4 0.005 0.01 0.05 0.1 0.5 1 0 0.5 1.0 1.1
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a (˚ C/W)

(V C E =4V) (V C E =4V)
200 300 4
1 2 5 ˚C
DC C urrent G ain h FE

DC C urrent G ain h FE

Transient Thermal Resistance

Typ
100 C
25˚
100
˚C
–30 1
50
50

0.5

20 20 0.3
0.02 0.1 0.5 1 5 7 0.01 0.05 0.1 0.5 1 5 7 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
30 20 50
10
0m
s
10
Ma xim um Powe r Dissipation P C ( W)

40
5
Cut- off F req uency f T (M H Z )

W
10

ith
Collector Curr ent I C (A)

ms

20
In
fin

30
ite
he

1
at
si
nk

0.5 20
10 Without Heatsink
Natural Cooling

10
0.1
Without Heatsink
2
0 0.05 0
–0.01 –0.05 –0.1 –0.5 –1 –5 5 10 50 120 200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

75
 2SC3835
Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) Application : Humidifier, DC-DC Converter, and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
15.6±0.4 4.8±0.2

5.0±0.2
µA

2.0

1.8
VCBO 200 V ICBO VCB=200V 100max 9.6 2.0±0.1

VCEO 120 V IEBO VEB=8V 100max µA

VEBO 8 V V(BR)CEO IC=50mA 120min V

19.9±0.3

4.0
a
IC 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 ø3.2±0.1
b
IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max V
PC 70(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max V 2

4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–0.5A 30typ MHz 3
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 110typ pF 1.05 +0.2
-0.1 0.65 +0.2
-0.1

■Typical Switching Characteristics (Common Emitter) 5.45±0.1 5.45±0.1 1.4

B C E
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
50 16.7 3 10 –5 0.3 –0.6 0.5max 3.0max 0.5max b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )

7 2.6 7
A A
2 00m 1 50m
6 6
mA
100 2

Collector Current I C (A)

Collector Current I C (A)

5 5
60mA
A
4 40m 4

p)

mp)
Tem
5A

)
Temp
e Te
3 20 mA 3
3A

se
1
I C= 1

(Ca

(Cas

(Case
˚C
A

2 2

25˚C
125
I B =10mA

–30˚C
1 1

0 0 0
0 1 2 3 4 0.005 0.01 0.05 0.1 0.5 1 0 0.5 1.0 1.1
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚ C/W)

(V C E =4V) (V C E =4V)
200 300 5
1 2 5 ˚C
DC C urrent G ain h FE

DC C urrent G ain h FE

Transient Thermal Resistance

Typ
100 C
25˚
100
˚C
–30
50
50 1

0.5
20 20 0.4
0.02 0.1 0.5 1 5 7 0.01 0.05 0.1 0.5 1 5 7 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
30 20 70
10
0µ
s
10
60
M aximu m Power Dissip ation P C (W)

5
Cut-o ff Fr equ ency f T (MH Z )

10

50
ith
Co lle ctor Cu rre nt I C (A)

ms

20
In
fin
ite

40
he

1
at
si
nk

30
0.5
10 Without Heatsink
Natural Cooling 20

10
0.1
Without Heatsink
3.5
0 0.05 0
–0.01 –0.05 –0.1 –0.5 –1 –5 5 10 50 120 200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

76
 2SC3851/3851A
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1488/A) Application : Audio and PPC High Voltage Power Supply, and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Ratings Ratings
Symbol Unit Symbol Conditions Unit 4.2±0.2
2SC3851 2SC3851A 2SC3851 2SC3851A 10.1±0.2

4.0±0.2
2.8 c0.5
VCBO 80 100 V 100max µA
ICBO

8.4±0.2
VCEO 60 80 V VCB= 80 100 V

16.9±0.3
VEBO 6 V IEBO VEB=6V 100max µA ø3.3±0.2
a
IC 4

0.8±0.2
A V(BR)CEO IC=25mA 60min 80min V b

IB 1 A hFE VCE=4V, IC=1A 40 to320

±0.2
3.9
PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=0.2A 0.5max V

13.0min
1.35±0.15
Tj 150 °C fT VCE=12V, IE=–0.2A 15typ MHz
1.35±0.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 60typ pF 0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54

■Typical Switching Characteristics (Common Emitter) 2.2±0.2

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) B C E a. Part No.
12 6 2 10 –5 200 –200 0.2typ 1typ 0.3typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V CE =4V)
Collector-Emitter Saturation Voltage V C E (sa t) (V )

4 4
60 m A
A
0m

50mA
=7
IB

40mA
1.0

Collector Current I C (A)

3 3
Collector Current I C (A)

30mA

20mA

p)
2 2

Tem

)
emp

mp)
se

se T
0.5

(Ca

e Te
10mA 3A

(Ca
˚C

(Cas
125
1 1

25˚C
2A
5mA

–30˚C
I C =1 A

0 0 0
0 1 2 3 4 5 6 0.005 0.01 0.05 0.1 0.5 1 0 0.5 1.0 1.2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚C/W)

(V C E =4V) (V C E =4V)
500 500 5
DC Curr ent Gain h FE

DC Curr ent Gain h FE

Transient Thermal Resistance

125˚C
Typ
25˚ C

100 100
– 3 0 ˚C

50 50 1

20 20 0.5
0.01 0.1 0.5 1 4 0.01 0.05 0.1 0.5 1 4 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
40 10 30
1m
s
5 10
m
Ma xim um Powe r Dissipat io n P C (W)

10 s
0m
Cu t-off Fr eque ncy f T ( MH Z )

30 s
Collector Cur rent I C (A)

DC 20
ith
In
fin

1
ite

20 Typ
he
at

0.5
si
nk

10

10 Without Heatsink
Natural Cooling
0.1
Without Heatsink

0 0.05 0
–0.005 –0.1 –0.5 –1 –4 3 5 10 50 80 0 50 100 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

77
 High hFE
LOW VCE (sat) 2SC3852/3852A
Silicon NPN Epitaxial Planar Transistor Application : Driver for Solenoid and Motor, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Ratings Ratings
Symbol Unit Symbol Conditions Unit 4.2±0.2
2SC3852 2SC3852A 2SC3852 2SC3852A 10.1±0.2

4.0±0.2
2.8 c0.5
VCBO 80 100 V 10max µA
ICBO

8.4±0.2
VCEO 60 80 V VCB= 80 100 V

16.9±0.3
VEBO 6 V IEBO VEB=6V 100max µA ø3.3±0.2
a
IC 3 V(BR)CEO IC=25mA

0.8±0.2
A 60min 80min V b

IB 1 A hFE VCE=4V, IC=0.5A 500min

±0.2
3.9
PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=50mA 0.5max V

13.0min
1.35±0.15
Tj 150 °C fT VCE=12V, IE=–0.2A 15typ MHz
1.35±0.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF 0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54

■Typical Switching Characteristics (Common Emitter) 2.2±0.2

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) B C E a. Part No.
20 20 1.0 10 –5 15 –30 0.8typ 3.0typ 1.2typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V CE =4V)
Collector-Emitter Saturation Voltage V C E (sa t) (V )

3 1.0 3
A
2m 8mA
=1
IB

Collector Current I C (A)

5mA
Collector Current I C (A)

2 1.0 2

3mA

p)

mp)
em

)
Temp
2mA

eT

e Te
Cas

(Case
(Cas
1 0.5 1

˚C (
1mA

25˚C
125
3A

–30˚C
2A
0.5mA
I C =1A

0 0 0
0 1 2 3 4 5 6 0.001 0.005 0.01 0.05 0.1 0.5 1 0 0.5 1.0 1.1
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a ( ˚C/W)

(V C E =4V) (V C E =4V)
2000 2000 5

125˚C
Transient Thermal Resistance
D C Cur r ent Gai n h F E

D C Cur r ent Gai n h F E

1000 1000
Typ 25 ˚C

500 500
– 3 0 ˚C

V CB =10V
I E =–2A
100 100 0.5
0.01 0.1 0.5 1 3 0.01 0.1 0.5 1 3 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
30 10 30
1m

5 10
s

Maxim um Power Dissipatio n P C ( W)

10 m
s
Cu t-of f Fr eque ncy f T (MH Z )

0m
s
Collecto r Curr ent I C (A)

20 DC 20
ith
In

Typ
fin

1
ite
he
at

0.5
si
nk

10 10

Without Heatsink
Natural Cooling
0.1
Without Heatsink

0 0.05 0
–0.005 –0.01 –0.05 –0.1 –0.5 –1 –2 3 5 10 50 100 0 50 100 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

78
 2SC3856
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
15.6±0.4 4.8±0.2

5.0±0.2
µA

2.0

1.8
VCBO 200 V ICBO VCB=200V 100max 9.6 2.0±0.1

VCEO 180 V IEBO VEB=6V 100max µA

V(BR)CEO V

19.9±0.3
VEBO 6 V IC=50mA 180min

4.0
a
IC 15 A hFE VCE=4V, IC=3A 50min∗ ø3.2±0.1
b
IB 4 A VCE(sat) IC=5A, IB=0.5A 2.0max V
PC 130(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz 2

4.0max
20.0min
Tj 150 °C COB VCB=10V, f=1MHz 300typ pF 3

Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1 0.65 +0.2
-0.1

5.45±0.1 5.45±0.1 1.4

■Typical Switching Characteristics (Common Emitter) B C E
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
40 4 10 10 –5 1 –1 0.5typ 1.8typ 0.6typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =4V)
15 3 15
Collector-Emitter Saturation Voltage V C E (s at) (V )

A mA
1A

m 0
00 50 A
7 300m

20 0m A

Collector Current I C (A)

Collector Current I C (A)

10 2 10

100 mA

mp)

Temp)
mp)
e Te

e Te
5 50mA 1 5

Cas

(Case
(Cas
˚C (
25˚C

–30˚C
125
I B =20mA I C =10A
5A

0 0 0
0 1 2 3 4 0 0.5 1.0 1.5 2.0 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =4V) (V C E =4V)
300 200 3
125˚C
DC C urrent G ain h FE
D C Cur r ent Gai n h F E

Transient Thermal Resistance

100 1
Typ 25˚C
100

0.5
50 –30˚C
50

20 20 0.1
0.02 0.1 0.5 1 5 10 15 0.02 0.1 0.5 1 5 10 15 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
30 40 130
3m
10 s
m
10 s
Typ
Maxim um Power Dissi pation P C (W)

0m
s
10 100
Cut -off Fre quen cy f T ( MH Z )

D
C
ith
Collecto r Cur ren t I C (A)

20
In

5
fin
ite
he
at
si
nk

1 50
10
0.5
Without Heatsink
Natural Cooling

Without Heatsink
3.5
0 0.1 0
–0.02 –0.1 –1 –10 3 10 100 200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

79
 2SC3857
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1493) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
Symbol Ratings Unit Symbol Conditions Ratings Unit
36.4±0.3 6.0±0.2
VCBO 200 V ICBO VCB=200V 100max µA
24.4±0.2 2.1
VCEO 200 V IEBO VEB=6V 100max µA 2-ø3.2±0.1 9

VEBO 6 V V(BR)CEO IC=50mA 200min V

7
21.4±0.3
IC 15 A hFE VCE=4V, IC=5A 50min∗ a
IB 5 A VCE(sat) IC=10A, IB=1A 3.0max V b

PC 150(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz

2

4.0max
20.0min
Tj 150 °C COB VCB=10V, f=1MHz 250typ pF 3
0.65 +0.2
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
-0.1
Tstg –55 to +150 °C 1.05 +0.2
-0.1

5.45±0.1 5.45±0.1 3.0 +0.3

-0.1

■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 18.4g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
60 12 5 10 –5 0.5 –0.5 0.3typ 2.4typ 0.4typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V CE =4V)
15 3 15
Collector-Emitter Saturation Voltage V C E (s at) (V )

mA
5A

1A 0 400m
A
60
1.

20 0m A

Collector Current I C (A)

Collector Current I C (A)

10 2 10

10 0m A

p)

)
Tem

Temp
5 I B =50mA 1 5

se

(Case
(Ca
I C =15A

˚C

–30˚C
125
10A

25˚C
5A

0 0 0
0 1 2 3 4 0 1 2 3 4 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =4V) (V C E =4V)
300 300 2
DC C urrent G ain h FE

DC C urrent G ain h FE

Transient Thermal Resistance

125˚C 1

Typ
100 100 25˚C 0.5

–30˚C
50 50

20 20 0.1
0.02 0.1 0.5 1 5 10 15 0.02 0.1 0.5 1 5 10 15 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
40 50 160
3m
20 s
m 10ms
s
Maxim um Power Dissi pation P C (W)

D
C
Cu t-off Fre quen cy f T ( MH Z )

30 10 120
10

W
Co lle ctor Cu rre nt I C ( A)

0m

ith

Typ
s

In

5
fin
ite
he

20 80
at
si
nk

10 0.5 Without Heatsink 40

Natural Cooling

Without Heatsink
5
0 0.1
2 10 100 300 0
–0.02 –0.1 –1 –10 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

80
 2SC3858
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1494) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
Symbol Ratings Unit Symbol Conditions Ratings Unit
36.4±0.3 6.0±0.2
VCBO 200 V ICBO VCB=200V 100max µA 24.4±0.2 2.1
VCEO 200 V IEBO VEB=6V 100max µA 2-ø3.2±0.1 9

VEBO 6 V V(BR)CEO IC=50mA 200min V

7
21.4±0.3
IC 17 A hFE VCE=4V, IC=8A 50min∗ a

V b
IB 5 A VCE(sat) IC=10A, IB=1A 2.5max
PC 200(Tc=25°C) W fT VCE=12V, IE=–1A 20typ MHz 2

4.0max
20.0min
Tj 150 °C COB VCB=10V, f=1MHz 300typ pF 3
0.65 +0.2
∗hFE Rank Y(50 to 100), P(70 to 140), G(90 to 180)
-0.1
Tstg 1.05 +0.2
–55 to +150 °C -0.1

5.45±0.1 5.45±0.1 3.0 +0.3

-0.1

■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 18.4g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
40 4 10 10 –5 1 –1 0.5typ 1.8typ 0.6typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =4V)
17 3 17
Collector-Emitter Saturation Voltage V C E (s at) (V )

1A mA mA
5A

70
0 500
1.

15 15
A
300m

Collector Current I C (A)

Collector Current I C (A)

20 0m A 2

10 10

100mA

p)

)
Tem

Temp
1

se
5 50mA 5

(Case
(Ca
˚C
I C =15A
125

–30˚C
25˚C
I B =20mA 10A
5A

0 0 0
0 1 2 3 4 0 1 2 3 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a ( ˚ C/W)

(V C E =4V) (V C E =4V)
300 200 2
125˚C
DC C urrent G ain h FE

DC C urrent G ain h FE

Transient Thermal Resistance

100 1
100 Typ 25˚C

50 –30˚C 0.5

50

20 10 0.1
0.02 0.1 0.5 1 5 10 17 0.02 0.1 0.5 1 5 10 17 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
30 50 200
3
20 10 ms
m m
s s
Typ
Maxim um Power Dissi pation P C (W)

D 160
10

C
0m
Cu t-off Fre quen cy f T ( MH Z )

10
W
s

ith
Co lle ctor Cu rre nt I C ( A)

20
In

5
fin

120
ite
he
at
si
nk

1 80
10
0.5 Without Heatsink
Natural Cooling 40

Without Heatsink
5
0 0.1
2 10 100 300 0
–0.02 –0.1 –1 –10 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

81
 2SC3890
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol Ratings Unit Symbol Conditions Ratings Unit 4.2±0.2
10.1±0.2

4.0±0.2
VCBO 500 ICBO VCB=500V 100max µA 2.8 c0.5
V
VCEO 400 V IEBO VEB=10V 100max µA

8.4±0.2
16.9±0.3
VEBO 10 V V(BR)CEO IC=25mA 400min V
ø3.3±0.2
IC 7(Pulse14) A hFE VCE=4V, IC=3A 10 to 30 a

0.8±0.2
b
IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max V
PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A 1.3max V

±0.2
3.9
13.0min
Tj 150 °C fT VCE=12V, IE=–0.5A 10typ MHz 1.35±0.15

Tstg –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF 1.35±0.15

0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
B C E
200 66 3 10 –5 0.3 –0.6 1max 3max 0.5max b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V C E =4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )

7 7
A
600m
mA

Base-Emitter Saturation Voltage V B E (s at) (V)

800

6 6
I B=

V B E (sat)
40 0m A

Collector Current I C (A)

Collector Current I C (A)

1
300 mA e Temp)
–55˚C (Cas
4 4
Temp)
200 mA 25 ˚C (Case

p)
Tem

)
mp)
emp
T emp)
(Case
125˚C
p)

e Te
se

se T
2 5 Tem

(Ca
100mA

(Cas
(Ca
2 2

˚C
e
˚C
as

125

25˚C

–55˚C
(C

C
5˚
12 C
5˚
V C E (sat) –5

0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 7 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚ C/W)

(V C E =4V)
70 7 5
t o n• t s t g • t f (µ s)

5
50
DC Cur rent Gain h FE

Transient Thermal Resistance

t s tg
V C C 200V
Typ I C :I B1 :I B 2 =10:1:–2
1
Swi tchi ng T im e

1
0.5
t on

0.5
10 tf
7 0.1 0.3
0.02 0.05 0.1 0.5 1 5 7 0.2 0.5 1 5 7 1 10 100 1000

Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 30

10 10 10
M aximu m Power Dissi pation P C (W)

0µ
s
5 5
W
ith
Co lle ctor Cu rre nt I C (A)

Collector Curr ent I C (A)

20
In
fin
ite
he
at
si

1 1
nk

Without Heatsink
Without Heatsink 10
Natural Cooling
0.5 Natural Cooling 0.5
L=3mH
–IB2=1A
Duty:less than 1%

Without Heatsink
2
0.1 0.1 0
5 10 50 100 500 5 10 50 100 500 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

82
 2SC3927
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
15.6±0.4 4.8±0.2

5.0±0.2
µA

2.0
VCB=800V 100max

1.8
VCBO 900 V ICBO 9.6 2.0±0.1

VCEO 550 V IEBO VEB=7V 100max µA

VEBO 7 V V(BR)CEO IC=10mA 550min V

19.9±0.3

4.0
10 to 28 a
IC 10(Pulse15) A hFE VCE=4V, IC=5A ø3.2±0.1
b
IB 5 A VCE(sat) IC=5A, IB=1A 0.5max V
PC 120(Tc=25°C) W VBE(sat) IC=5A, IB=1A 1.2max V 2

4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–1A 6typ MHz 3
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 105typ pF 1.05 +0.2
-0.1 0.65 +0.2
-0.1

■Typical Switching Characteristics (Common Emitter) 5.45±0.1

B C E
5.45±0.1 1.4

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
250 50 5 10 –5 0.75 –1.5 1max 5max 0.5max b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V CE =4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )

10 10
2A 1A
1.
Base-Emitter Saturation Voltage V B E (s at) (V )

80 0m A V B E (sat)
1
8 8

Collector Current I C (A)

60 0m A
e Temp)
–55˚C (Cas
Collector Current I C (A)

p)
6 400m A ase Tem 6
25˚C (C

p)
Temp

)
Temp
(Case

Temp)
em
200mA 125˚C

eT
)

4 4
mp

(Case
Cas

(Case
Te

˚C (
se

I B =100mA
a

25˚C
(C

125

–55˚C
˚C

2 C 2
5˚
25

12 C
˚
V C E (sat) – 55

0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j- a (˚ C/W)

(V C E =4V)
50 10 2
125˚ C
t o n • t s t g• t f ( µ s)

5 t s tg
DC C urrent G ain h FE

25 ˚C V C C 250V
Transient Thermal Resistance

1
I C :I B1 :–I B 2 =10:1.5:3

–5 5˚ C
0.5
Swit ching Time

0.5
10 t on

tf
5 0.1 0.1
0.02 0.05 0.1 0.5 1 5 10 0.2 0.5 1 5 10 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 120

10 10
DC 10 1m 10
ms 0µ
M aximu m Power Dissipa tion P C (W)

s s 100
5 5
W
ith
Co lle ctor Cu rr ent I C (A)

Co lle ctor Cu rr ent I C ( A)

In
fin
ite

1 1
he
at

0.5 0.5
si
nk

50

Without Heatsink
0.1 Without Heatsink 0.1 Natural Cooling
Natural Cooling L=3mH
0.05 0.05 IB2=–1.0A
Duty:less than 1%
Without Heatsink
3.5
0.02 0.02 0
10 50 100 500 600 50 100 500 1000 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

83
 2SC4020
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-25(TO220)
Symbol Ratings Unit Symbol Conditions Ratings Unit
10.2±0.2 4.8±0.2

3.0±0.2
VCBO 900 V ICBO VCB=800V 100max µA 2.0±0.1

VCEO 800 V IEBO VEB=7V 100max µA

16.0±0.7
VEBO 7 V V(BR)CEO IC=10mA 800min V

8.8±0.2
a ø3.75±0.2
IC 3(Pulse 6) A hFE VCE=4V, IC=0.7A 10 to 30
b
IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max V
PC 50(Tc=25°C) W VBE(sat) IC=0.7A, IB=0.14A 1.2max V 1.35

4.0max
12.0min
Tj 150 °C fT VCE=12V, IE=–0.3A 6typ MHz
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 40typ pF 0.65 +0.2
-0.1

2.5 2.5 1.4

■Typical Switching Characteristics (Common Emitter) B C E
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.6g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
250 357 0.7 10 –5 0.1 –0.35 1max 5max 1max b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V C E =4V)
mA
Collector-Emitter Saturation Voltage V C E (s a t) (V )

3 0 2 3
50
40 0m A
Base-Emitter Saturation Voltage V B E (s at) (V )

300m A

Collector Current I C (A)

Collector Current I C (A)

200 mA
2 2

140mA

mp)

mp)
p)
1
100mA

ase Tem
e Te

ase Te
V B E (sat)

(Cas
1 60mA 1

25˚C (C
–30˚C (C
125˚C
I B =20mA

V C E (sat)
0 0 0
0 1 2 3 4 0.03 0.05 0.1 0.5 1 5 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =4V)
50 6 5
5
t o n• t s t g• t f (µ s)

125˚C
t s tg
DC C urrent G ain h FE

Transient Thermal Resistance

25˚C
VCC 250V
–30˚C IC:IB1:– IB2=2:0.3:1 Const.
Sw it ching Time

10 1
1
tf
5 0.5
0.5
t on

2 0.2 0.3
0.02 0.05 0.1 0.5 1 3 0.1 0.5 1 3 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
10 10 50

5 5
Ma xim um Powe r Dissipat io n P C (W)

40
10
0µ
W

s
ith
Collecto r Cur rent I C (A)

Collecto r Cur rent I C (A)

In
fin

30
ite
he

1 1
at
si
nk

Without Heatsink 20
0.5 0.5 Natural Cooling
Without Heatsink L=3mH
Natural Cooling IB2=–1.0A
Duty:less than 1% 10

Without Heatsink
0.1 2
0.1 0
50 100 500 1000 50 100 500 1000 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

84
 High hFE
LOW VCE (sat) 2SC4024
Silicon NPN Epitaxial Planar Transistor Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol Ratings Unit Symbol Conditions Ratings Unit 4.2±0.2
10.1±0.2

4.0±0.2
2.8 c0.5
VCBO 100 V ICBO VCB=100V 10max µA
VCEO 50 V IEBO VEB=15V 10max µA

8.4±0.2
16.9±0.3
VEBO 15 V V(BR)CEO IC=25mA 50min V
ø3.3±0.2
hFE VCE=4V, IC=1A 300 to 1600 a
IC 10 A

0.8±0.2
b
IB 3 A VCE(sat) IC=5A, IB=0.1A 0.5max V
PC fT VCE=12V, IE=–0.5A 24typ MHz

±0.2
3.9
35(Tc=25°C) W

13.0min
Tj 150 °C COB VCB=10V, f=1MHz 150typ pF 1.35±0.15

1.35±0.15
Tstg –55 to +150 °C
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (A) (A) (µs) (µs) (µs) a. Part No.
B C E
20 4 5 0.1 –0.1 0.5typ 2.0typ 0.5typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V CE =4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )

10 1.5 10

I B =35m A
8 30mA 8

Collector Current I C (A)

25mA
Collector Current I C (A)

1.0
20m A
6 6
15mA

)
mp

)
emp
mp)
10mA

Te
4 4

se T
e Te
se
0.5

(Ca

(Ca
10A

(Cas
5mA

˚C

25˚C
125

–30˚C
2 5A 2
3A
I C= 1 A

0 0 0
0 2 4 6 0.002 0.01 0.1 1 2 0 0.5 1.0 1.2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚ C/W)

(V C E =4V) (V C E =4V)
1000 1000 4

1 2 5 ˚C
DC C urrent G ain h FE

DC C urrent G ain h FE

Transient Thermal Resistance

Typ
500 500
25˚C

˚C
–30 1

0.5

100 100 0.3

0.02 0.1 0.5 1 5 10 0.02 0.1 0.5 1 5 10 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
30 30 40
1m Natural Cooling
s Silicone Grease
Typ Heatsink: Aluminum
Maxim um Power Dissi pation P C (W)

10
m in mm
10 10 s
Cut- off Fr equ ency f T (MH Z )

30
0m
Co lle ctor Cu rre nt I C ( A)

20 s
5
DC
W
ith
In

20
fin
ite
he
at

150x150x2
si

10 1
nk

100x100x2
10
Without Heatsink
0.5 Natural Cooling 50x50x2

Without Heatsink
2
0 0.2 0
–0.05 –0.1 –0.5 –1 –5 –10 3 5 10 50 100 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

85
 LOW VCE (sat) 2SC4064
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1567) Application : DC Motor Driver and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol Ratings Unit Symbol Conditions Ratings Unit 4.2±0.2
10.1±0.2

4.0±0.2
2.8 c0.5
VCBO 50 V ICBO VCB=50V 100max µA
VCEO 50 V IEBO VEB=6V 10max µA

8.4±0.2
16.9±0.3
VEBO 6 V V(BR)CEO IC=25mA 50min V
ø3.3±0.2
IC 12 A hFE VCE=1V, IC=6A 50min a

0.8±0.2
b
IB 3 A VCE(sat) IC=6A, IB=0.3A 0.35max V
PC 35(Tc=25°C) W fT VCE=12V, IE=–0.5A 40typ MHz

±0.2
3.9
13.0min
Tj 150 °C COB VCB=12V, f=1MHz 180typ pF 1.35±0.15

Tstg 1.35±0.15
–55 to +150 °C
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
B C E
24 4 6 10 –5 0.12 –0.12 0.6typ 1.4typ 0.4typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V CE =1V)
Collector-Emitter Saturation Voltage V C E (s at) (V )

12 1.3 12
100m A
A
m
20

10 10

Collector Current I C (A)

60mA 1.0
Collector Current I C (A)

8 8
40mA

6 6

p)

mp)

)
Tem

Temp
20mA

e Te
0.5

se
4 4

(Case
(Cas
(Ca
10mA 12A

˚C

25˚C
–30˚C
125
9A
2 I B =5mA 6A 2
3A
I C= 1 A

0 0 0
0 0.8 1.6 2.4 3.2 4 4.8 5.6 6 0.002 0.01 0.1 1 3 0 0.5 1.0 1.1
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a ( ˚C/W)

(V C E =1V) (V C E =1V)
1000 1000 5

125˚C
500 500
D C Cur r ent Gai n h F E

D C Cur r ent Gai n h F E

Transient Thermal Resistance

Typ 25˚C

–3 0˚C

100 100 1

50 50
0.5

20 20 0.3
0.02 0.1 1 10 12 0.02 0.1 1 10 12 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
30 30 40
Natural Cooling
1m Silicone Grease
s
Heatsink: Aluminum
Maxim um Power Dissipatio n P C ( W)

Typ
10

10
10 in mm
m

0m
s
Cut- off F re quen cy f T (MH Z )

30
5 DC s
Collector Curr ent I C (A)

20
W
ith
In

20
fin

1
ite
he
at

0.5 150x150x2
si

10
nk

100x100x2
10
Without Heatsink
Natural Cooling 50x50x2
0.1
Without Heatsink
2
0 0.05 0
–0.05 –0.1 –0.5 –1 –5 –10 –12 3 5 10 50 100 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

86
 Equivalent C
circuit

Built-in Diode at C–E

Low VCE (sat) 2SC4065 B

( 400 Ω )
E

Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1568) Application : DC Motor Driver and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol Ratings Unit Symbol Conditions Ratings Unit 10.1±0.2 4.2±0.2

4.0±0.2
2.8 c0.5
VCBO 60 V ICBO VCB=60V 100max µA
VCEO 60 IEBO VEB=6V 60max mA

8.4±0.2
V

16.9±0.3
VEBO 6 V V(BR)CEO IC=25mA 60min V ø3.3±0.2
a
IC ±12 A hFE VCE=1V, IC=6A 50min

0.8±0.2
b
IB 3 A VCE(sat) IC=6A, IB=1.3A 0.35max V

±0.2
3.9
PC 35(Tc=25°C) W VFEC VECO=10A 2.5max V

13.0min
Tj 150 °C fT VCE=12V, IE=–0.5A 24typ MHz 1.35±0.15

1.35±0.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 180typ PF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
B C E
24 4 6 10 –5 0.12 –0.12 0.6typ 1.4typ 0.4typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sa t ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V CE =1V)
Collector-Emitter Saturation Voltage V C E (s at) (V )

12 1.3 12
A
A

m
50
0m

1 100m A
20

10 10

Collector Current I C (A)

1.0
Collector Current I C (A)

60mA
8 8

40mA
6 6

p)

mp)
p)
Tem

e Tem
e Te
0.5
20mA

se
4 4

(Cas
(Ca

(Cas
12A

˚C

25˚C
–30˚C
125
I B =10mA 9A
2 6A 2
3A
I C =1 A

0 0 0
0 2 4 6 0.005 0.01 0.1 1 3 0 0.5 1.0 1.1
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚ C/W)

(V C E =1V) (V C E =1V)
400 400 5
Typ ˚C
5
12
DC Cur rent Gain h F E

DC Cur rent Gain h F E

Transient Thermal Resistance

100 100 ˚C
25
C
0˚
50 50 –3
1

0.5
10 10

5 5
3 3 0.2
0.02 0.1 1 10 12 0.02 0.1 1 10 12 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
30 30 40
Natural Cooling
1m
s Silicone Grease
Heatsink: Aluminum
Maxim um Power Dissip ation P C (W)

Typ
10

10
10 in mm
m

0m
s
Cut-o ff F requ ency f T (MH Z )

30
5 DC s
Collector Curre nt I C (A)

20
W
ith

20
In
fin

1
ite
he

0.5 150x150x2
at

10
si
nk

100x100x2
10
Without Heatsink
Natural Cooling 50x50x2
0.1
Without Heatsink
2
0 0.05 0
–0.05 –0.1 –0.5 –1 –5 –10 –12 3 5 10 50 100 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

87
 2SC4073
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol Ratings Unit Symbol Conditions Ratings Unit 4.2±0.2
10.1±0.2

4.0±0.2
2.8 c0.5
VCBO 500 V ICBO VCB=500V 100max µA
VCEO 400 V IEBO VEB=10V 100max µA

8.4±0.2
16.9±0.3
VEBO 10 V V(BR)CEO IC=25mA 400min V
ø3.3±0.2
IC 5(Pulse10) hFE VCE=4V, IC=2A 10 to 30 a
A

0.8±0.2
b
IB 2 A VCE(sat) IC=2A, IB=0.4A 0.5max V
PC 30(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A 1.3max V

±0.2
3.9
13.0min
Tj 150 °C fT VCE=12V, IE=–0.3A 10typ MHz 1.35±0.15

Tstg COB VCB=10V, f=1MHz 1.35±0.15

–55 to +150 °C 30typ pF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
B C E
200 100 2 10 –5 0.2 –0.4 1max 3max 0.5max b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V C E =4V)
5 5
Collector-Emitter Saturation Voltage V C E (s at) (V )

60 0m A
A
m

2
Base-Emitter Saturation Voltage V B E (s at) (V)
00
=8

400 mA
IB

4 4

Collector Current I C (A)

Collector Current I C (A)

300m A

3 3
200mA
V B E (sat)
1

mp)
–55˚C (Case Temp)

)
p)
emp
2 100mA 2

Tem
)

e Te
emp

p)
25˚C (Case Tem

se T
se
e Temp)

(Cas
eT

125˚C (Cas
˚C

(Ca

(Ca
50mA
as
25

˚C

–55˚C
1
(C

25˚C
C

125
5˚
12 ˚ C
V C E (sat) – 55

0 0 0
0 1 2 3 4 0.01 0.05 0.1 0.5 1 5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚ C/W)

(V C E =4V)
50 5 5
125˚C
t on• t s tg • t f (µ s)

25˚C t s tg
DC Curr ent Gain h FE

Transient Thermal Resistance

V C C 200V
I C :I B 1 :–I B 2 =10:1:2
–55˚C
1
Switching Ti me

0.5 1

10 t on

tf 0.5

5 0.1 0.3
0.01 0.05 0.1 0.5 1 5 0.1 0.5 1 5 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 30

10 10 10
0µ
M aximu m Power Dissipat io n P C (W)

5 1m s
s 5
10
W

m
ith

s
Co lle ctor Cu rren t I C (A)

Co lle ctor Cu rr ent I C ( A)

20
In
fin

1
D

ite
C

1
he

0.5
at

0.5
si
nk

10
0.1 Without Heatsink
Without Heatsink 0.1 Natural Cooling
0.05
Natural Cooling L=3mH
0.05 IB2=–0.5A
Duty:less than1% Without Heatsink
2
0.01 0.01 0
2 5 10 50 100 500 5 10 50 100 500 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

88
 2SC4130
Silicon NPN Epitaxial Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol Ratings Unit Symbol Conditions Ratings Unit 4.2±0.2
10.1±0.2

4.0±0.2
2.8 c0.5
VCBO 500 V ICBO VCB=500V 100max µA
VCEO 400 V IEBO VEB=10V 100max µA

8.4±0.2
16.9±0.3
VEBO 10 V V(BR)CEO IC=25mA 400min V
ø3.3±0.2
IC 7(Pulse14) hFE VCE=4V, IC=3A 10 to 30 a
A

0.8±0.2
b
IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max V
PC 30(Tc=25°C) VBE(sat) IC=3A, IB=0.6A 1.3max V

±0.2
3.9
W

13.0min
Tj 150 °C fT VCE=12V, IE=–0.5A 15typ MHz 1.35±0.15

50typ 1.35±0.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz pF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
B C E
200 67 3 10 –5 0.3 –0.6 1max 2.2max 0.5max b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V C E =4V)
7 7
Collector-Emitter Saturation Voltage V C E (s at) (V )

10 00 m A
A
0m

Base-Emitter Saturation Voltage V B E (s at) (V)

40

6 6
60 0m A 2
=1
IB

Collector Current I C (A)

Collector Current I C (A)

400mA

4 4

200 mA

mp)
V B E (sat)

)
mp

p)
1

Tem

e Te
Te
–55˚C (Case Temp)
100m A

se
p)
25˚C (Case Tem

ase

(Cas
(Ca
2 2

C (C
e Temp)
125˚C (Cas

5˚C
p)

–55˚C
˚C

50mA
em

25˚
25

12
T
e
as C
125˚C
(C 5˚
V C E (sat) –5
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 7 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =4V)
50 5 4
125˚C
t o n • t s t g• t f ( µ s)

25˚C
D C Cur r ent Gai n h F E

Transient Thermal Resistance

–55˚C V C C 200V t s tg
I C :I B 1 :–I B2 =10:1:2
1
Swit ching Time

10 1
0.5

5
t on
0.5
tf
2 0.1 0.3
0.02 0.05 0.1 0.5 1 5 7 0.2 0.5 1 5 7 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 30

10 10 10
0µ
1m s
M aximum Power Dissipa ti on P C (W)

5 10 s 5
m
s
W

DC
ith
Collect or Cur ren t I C (A)

Collector Curr ent I C (A)

20
In
fin

1 1
ite
he

0.5 0.5
at
si
nk

Without Heatsink 10
0.1 0.1 Natural Cooling
Without Heatsink L=3mH
0.05 0.05
Natural Cooling IB2=–0.5A
Duty:less than 1%
Without Heatsink
2
0.01 0.01 0
2 5 10 50 100 500 2 5 10 50 100 500 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

89
 LOW VCE (sat) 2SC4131
Silicon NPN Epitaxial Planar Transistor Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol Ratings Unit Symbol Conditions Ratings Unit

0.8±0.2
15.6±0.2 5.5±0.2
VCBO 100 V ICBO VCB=100V 10max µA 3.45 ±0.2

µA

5.5
9.5±0.2
VCEO 50 V IEBO VEB=15V 10max
VEBO 15 V V(BR)CEO IC=25mA 50min V

23.0±0.3
ø3.3±0.2
IC 15(Pulse25) A hFE VCE=1V, IC=5A 60 to 360 a

1.6
IB 4 VCE(sat) IC=5A, IB=80mA 0.5max V b
A

3.0
PC 60(Tc=25°C) W VBE(sat) IC=5A, IB=80mA 1.2max V

3.3
Tj 150 °C fT VCE=12V, IE=–1A 18typ MHz 1.75 0.8

16.2
2.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 210typ pF
1.05 +0.2
-0.1

5.45±0.1 5.45±0.1 0.65 +0.2 3.35

■Typical Switching Characteristics (Common Emitter)
-0.1

1.5 4.4 1.5

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
20 4 5 10 –5 0.08 –0.08 0.5typ 2.0typ 0.4typ B C E b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =1V)
Collector-Emitter Saturation Voltage V C E (sa t) (V )

15 1.3 15
85mA

80mA
12

Collector Current I C (A)

1.0
Collector Current I C (A)

40mA 10

8
25mA

mp)
)
)
0.5

mp
emp
15mA
15A 5

e Te
Te
se T
se
4

(Cas
10A

(Ca

(Ca
I B =7mA

˚C

–30˚C
25˚C
5A

125
3A
I C =1 A

0 0 0
0 2 4 6 0.002 0.01 0.1 1 2 0 0.5 1.0 1.5
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a ( ˚C/W)

(V C E =1V) (V C E =1V)
1000 1000 3

12 5˚ C
D C Cur r ent Gai n h F E

D C Cur r ent Gai n h F E

Transient Thermal Resistance

500 Typ 500

2 5 ˚C

– 3 0 ˚C 1

0.5
100 100
70 70 0.3
0.02 0.1 1 10 15 0.02 0.1 1 10 15 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

t on •t stg •t f – I C Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

5 40 60
V C C 20V
t stg
I C =5A
I B1 =–I B 2 1m
Ma ximum Po we r Dissipatio n P C ( W)

=80mA s
t o n• t s t g • t f (µ s)

10

10
m

0m
Collecto r Curr ent I C (A)

10
s

s 40
DC
W

1
ith

5
In

tf
Switching Time

fin
ite

0.5
he
at
si

20
nk

1
t on Without Heatsink
Natural Cooling Without Heatsink
0.1 3.5
0.08 0.4 0
0.1 0.5 1 5 10 3 5 10 50 100 0 50 100 150
Collector C urrent I C (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

90
 2SC4138
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
15.6±0.4 4.8±0.2

5.0±0.2
µA

2.0
500

1.8
VCBO V ICBO VCB=500V 100max 9.6 2.0±0.1

VCEO 400 V IEBO VEB=10V 100max µA

VEBO 10 V V(BR)CEO IC=25mA 400min V

19.9±0.3

4.0
a ø3.2±0.1
IC 10(Pulse20) A hFE VCE=4V, IC=6A 10 to 30
b
IB 4 A VCE(sat) IC=6A, IB=1.2A 0.5max V
PC 80(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max V 2

4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–0.7A 10typ MHz 3

Tstg –55 to +150 °C COB VCB=10V, f=1MHz 85typ pF 1.05 +0.2

-0.1 0.65 +0.2
-0.1

■Typical Switching Characteristics (Common Emitter) 5.45±0.1

B C E
5.45±0.1 1.4

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
200 33.3 6 10 –5 0.6 –1.2 1max 3max 0.5max b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V C E =4V)
Collector-Emitter Saturation Voltage V C E (sa t) (V )

10 1.4 10
A 1A
1.2
Base-Emitter Saturation Voltage V B E (s at) (V)

8 600 mA 8

Collector Current I C (A)

Collector Current I C (A)

400mA
6 6
V B E (sat)

)
mp

)
emp

mp)
Te
4 200m A 4

se T

e Te
se
(Ca

(Ca

(Cas
˚C
I B =100m A

25˚C
125

–55˚C
2 2

V C E (sat)
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =4V)
100 10 3
t o n• t s tg • t f (µ s)

5 t s tg
Transient Thermal Resistance

125˚C
DC Cur rent Gain h FE

50
25˚C V C C 200V
I C :I B1 :–I B 2 =10:1:2
–55˚C
1
Switching Ti me

0.5 t on
10 0.5
tf

5 0.1 0.3
0.02 0.05 0.1 0.5 1 5 10 0.1 0.5 1 5 10 1 10 100 1000

Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
30 30 80
10
1m 0µ
s s
Maxim um Power Dissi pation P C (W)

10 10
60
W
ith
Collecto r Curr ent I C (A)

Collecto r Cur ren t I C (A)

5 5
In
fin
ite
he

40
at
si
nk

1 1
Without Heatsink
Natural Cooling
0.5 0.5
Without Heatsink L=3mH
20
Natural Cooling –IB2=1A
Duty:less than 1%

Without Heatsink
3.5
0.1 0.1
5 10 50 100 500 0
5 10 50 100 500 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

91
 2SC4139
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit 4.8±0.2
15.6±0.4

5.0±0.2
2.0

1.8
VCBO 500 V ICBO VCB=500V 100max µA 9.6 2.0±0.1

VCEO 400 V IEBO VEB=10V 100max µA

19.9±0.3
VEBO 10 V V(BR)CEO IC=25mA 400min V

4.0
a ø3.2±0.1
IC 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 30
b
IB 5 A VCE(sat) IC=8A, IB=1.6A 0.5max V
PC 120(Tc=25°C) W VBE(sat) IC=8A, IB=1.6A 1.3max V 2

4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–1.5A 10typ MHz 3

Tstg –55 to +150 °C COB VCB=10V, f=1MHz 85typ pF 1.05 +0.2

-0.1 0.65 +0.2
-0.1

5.45±0.1 5.45±0.1 1.4

■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
200 25 8 10 –5 0.8 –1.6 1max 3max 0.5max b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V CE =4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )

15 1.5 10
5A 1 .2 A
1.
Base-Emitter Saturation Voltage V B E (s at) (V )

800 mA 8

Collector Current I C (A)

Collector Current I C (A)

600mA V B E (sat)
10 1.0
e Temp) 6
–55˚C (Cas
400m A
Temp)

mp)
ase
25˚C (C

)
Temp

Temp)
e Te
)
Temp 4
(Case
p)

Cas
125˚C

(Case
200mA 0.5
em

(Case
5
˚C

˚C (
eT
25

25˚C
125
as

–55˚C
I B =100mA 2
C

(
C
5˚ ˚C
12 5
–5
V C E (sat)
0 0 0
0 1 2 3 4 0.03 0.05 0.1 0.5 1 5 10 20 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j- a (˚ C/W)

(V C E =4V)
50 8 2
t o n• t s t g• t f (µ s)

125˚C 5
t s tg
DC C urrent G ain h FE

Transient Thermal Resistance

25˚C V C C 200V 1
I C :I B1 :I B2 =10:1:–2
–55˚C
1 0.5
Sw it ching Time

0.5
10 t on

tf
5 0.1 0.1
0.02 0.05 0.1 0.5 1 5 10 15 0.5 1 5 10 15 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
50 50 120
10

Ma xim um Powe r Dissipat io n P C (W)

100
0µ
s

W
ith
Collect or Cur ren t I C (A)

Collector Curr ent I C (A)

In
fin

10 10
ite
he
at
si
nk

5 5 Without Heatsink 50
Natural Cooling
Without Heatsink L=3mH
Natural Cooling IB2=–1A
Duty:less than 1%

1 1 3.5 Without Heatsink

5 10 50 100 500 0
5 10 50 100 500 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

92
 2SC4140
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
15.6±0.4 4.8±0.2

5.0±0.2
2.0
µA

1.8
VCBO 500 V ICBO VCB=500V 100max 9.6 2.0±0.1

VCEO 400 V IEBO VEB=10V 100max µA

19.9±0.3
VEBO 10 V V(BR)CEO IC=25mA 400min V

4.0
a ø3.2±0.1
IC 18(Pulse36) A hFE VCE=4V, IC=10A 10 to 30
b
IB 6 A VCE(sat) IC=10A, IB=2A 0.5max V
PC 130(Tc=25°C) W VBE(sat) IC=10A, IB=2A 1.3max V 2

4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–2.0A 10typ MHz 3

Tstg –55 to +150 °C COB VCB=10V, f=1MHz 165typ pF 1.05 +0.2

-0.1 0.65 +0.2
-0.1

5.45±0.1 5.45±0.1 1.4

■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
200 20 10 10 –5 1 –2 1max 3max 0.5max b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V CE =4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )

18 1.4 18
1 .6 A
Base-Emitter Saturation Voltage V B E (s at) (V)

16 1.2 A 16

V B E (sat)

Collector Current I C (A)

Collector Current I C (A)

800 mA 1
12 12
Temp)
600mA –55˚C (Case

e Temp)
25˚C (Cas

)
400m A

mp

mp)
mp)
8 8

Te
)
Temp

e Te

e Te
(Case
p)

se
125˚C
em

(Ca

(Cas

(Cas
eT

˚C

200mA

˚C
25
as

25˚C
125
4

–55˚C
4
(C

C
I B =100mA 5˚
12 ˚C
V C E (sat) –55

0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 18 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚C /W)

(V C E =4V)
50 10 2
t o n• t s tg • t f (µ s)

125˚C 5
t s tg
DC Cur rent Gain h FE

Transient Thermal Resistance

V C C 200V 1
25˚C I C :I B1 :–I B 2 =10:1:2

0.5
Switching Ti me

–55˚C 1

0.5 t on
10

tf
5 0.1 0.1
0.02 0.05 0.1 0.5 1 5 10 18 0.2 0.5 1 5 10 18 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
50 50 130
10
10 1m 0µ
ms s s
Maxim um Power Dissi pation P C (W)

DC
10 10
100
W
ith
Co lle ctor Cu rre nt I C ( A)

Collecto r Cur rent I C (A)

5 5
In
fin
ite
he
at

1 1
si
nk

0.5 0.5 50
Without Heatsink
Without Heatsink Natural Cooling
Natural Cooling L=3mH
IB2=–0.5A
0.1 0.1 Duty:less than 1%

0.05 0.05 Without Heatsink

3.5
0.03 0.03 0
5 10 50 100 500 5 10 50 100 500 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

93
 2SC4153
Silicon NPN Triple Diffused Planar Transistor ( Switchihg Transistor) Application : Humidifier, DC-DC Converter, and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol Ratings Unit Symbol Conditions Ratings Unit 10.1±0.2 4.2±0.2

4.0±0.2
2.8 c0.5
VCBO 200 V ICBO VCB=200V 100max µA
IEBO VEB=8V 100max µA

8.4±0.2
VCEO 120 V

16.9±0.3
VEBO 8 V V(BR)CEO IC=50mA 120min V ø3.3±0.2
a
IC 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220

0.8±0.2
b
IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max V

±0.2
3.9
PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max V

13.0min
Tj fT VCE=12V, IE=–0.5A 30typ 1.35±0.15
150 °C MHz
1.35±0.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 110typ pF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
B C E
50 16.7 3 10 –5 0.3 –0.6 0.5max 3max 0.5max b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =4V)
Collector-Emitter Saturation Voltage V C E (sa t) (V )

7 3 7
mA
200
mA
5 150 6
mA
100

Collector Current I C (A)

Collector Current I C (A)

5 5
A
60m 2

4 40mA 4

p)

mp)
Tem

)
Temp
20m A

e Te
3 3

se

(Cas
(Ca

(Case
1

˚C
2 2

25˚C
125
I B =10mA

–30˚C
1 1
3A 5A
I C = 1A

0 0 0
0 1 2 3 4 0.005 0.01 0.1 1 2 0 0.5 1.0 1.1
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚C /W)

(V C E =4V) (V C E =4V)
300 300 5
12 5˚ C
D C Cur r ent Gai n h F E

D C Cur r ent Gai n h F E

Typ
Transient Thermal Resistance

25˚C
100 100
˚C
–30 1

50 50
0.5

20 20 0.2
0.01 0.1 0.5 1 5 7 0.01 0.1 0.5 1 5 7 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
40 20 30
10
0µ
s Natural Cooling
10
Typ Silicone Grease
Maxim um Power Dissipatio n P C (W)

Heatsink: Aluminum
30 5 in mm
Cut- off F req uenc y f T (MH Z )

10
Collector Curre nt I C (A)

ms

20
W
ith
In
fin

20 1 150x150x2
ite
he

100x100x2
at

0.5
si

10
nk

Without Heatsink
Natural Cooling 50x50x2
10

0.1 Without Heatsink

2
0 0.05 0
–0.01 –0.1 –1 –5 5 10 50 100 200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

94
 2SC4296
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol Ratings Unit Symbol Conditions Ratings Unit

0.8±0.2
15.6±0.2 5.5±0.2

VCBO 500 V ICBO VCB=500V 100max µA 3.45 ±0.2

µA

5.5
9.5±0.2
VCEO 400 V IEBO VEB=10V 100max
VEBO 10 V(BR)CEO IC=25mA 400min V

23.0±0.3
V
ø3.3±0.2
IC 10(Pulse20) A hFE VCE=4V, IC=6A 10 to 30 a

1.6
IB 4 VCE(sat) IC=6A, IB=1.2A 0.5max b
A V

3.0
PC 75(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max V

3.3
Tj 150 °C fT VCE=12V, IE=–0.7A 10typ MHz 1.75 0.8

16.2
2.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 85typ pF
1.05 +0.2
-0.1

5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
■Typical Switching Characteristics (Common Emitter)
1.5 4.4 1.5
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
200 33 6 10 –5 0.6 –1.2 1max 3max 0.5max B C E b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V C E =4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )

10 1.4 10
A 1A
1.2
Base-Emitter Saturation Voltage V B E (s at) (V )

8 600 mA 8

Collector Current I C (A)

Collector Current I C (A)

400mA
6 6
V B E (sat)

)
mp

)
emp

mp)
Te
4 200m A 4

se T

e Te
se
(Ca

(Ca

(Cas
˚C
I B = 100mA

25˚C
125

–55˚C
2 2

V C E (sat)
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚C/W)

(V C E =4V)
100 10 3
t o n• t s t g• t f (µ s)

5 t s tg
125˚C
Transient Thermal Resistance
DC C urrent G ain h FE

50
25˚C V C C 200V
I C :I B 1 :–I B2 =10:1:2
–55˚C
1
Sw it ching Time

0.5 t on
10 0.5
tf

5 0.1 0.3
0.02 0.05 0.1 0.5 1 5 10 0.1 0.5 1 5 10 1 10 100 1000

Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
30 30 80
50
µs
1m 10
10 s 0µ
s 10
Ma xim um Powe r Dissipat io n P C (W)

10
m
s
5 5 60
W
Collect or Cur ren t I C (A)

Collect or Cur re nt I C (A)

ith
In
fin
ite

1 1
he

40
at
si

0.5 0.5
nk

Without Heatsink
Natural Cooling
Without Heatsink L=3mH 20
0.1 Natural Cooling 0.1 –IB2=1A
Duty:less than 1%
0.05 0.05
Without Heatsink
3.5
0.02 0.02
5 10 50 100 500 0
5 10 50 100 500 0 50 100 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

95
 2SC4297
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol Ratings Unit Symbol Conditions Ratings Unit

0.8±0.2
15.6±0.2 5.5±0.2
VCBO 500 V ICBO VCB=500V 100max µA 3.45 ±0.2

µA

5.5
VCEO 400 V 100max

9.5±0.2
IEBO VEB=10V
VEBO 10 V V(BR)CEO IC=25mA 400min V

23.0±0.3
ø3.3±0.2
IC 12(Pulse24) A hFE VCE=4V, IC=7A 10 to 30 a

1.6
IB 4 A VCE(sat) IC=7A, IB=1.4A 0.5max V b

3.0
PC 75(Tc=25°C) W VBE(sat) IC=7A, IB=1.4A 1.3max V

3.3
Tj 150 °C fT VCE=12V, IE=–1A 10typ MHz 1.75 0.8

16.2
2.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 105typ pF
1.05 +0.2
-0.1

5.45±0.1 5.45±0.1 0.65 +0.2 3.35

■Typical Switching Characteristics (Common Emitter)
-0.1

1.5 4.4 1.5

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
200 28.5 7 10 –5 0.7 –1.4 1max 3max 0.5max B C E b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V C E =4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )

12 12
1A
Base-Emitter Saturation Voltage V B E (s at) (V)

80 0m A
10 10
V B E (sat)

Collector Current I C (A)

60 0m A
Collector Current I C (A)

1
8 8
Temp)
–55˚C (Case
400m A
e Temp)
6 25˚C (Cas 6

p)
mp)
Tem
mp)

)
Te

Temp
(Case

e Te
)
2 5 Temp

se
200mA 125˚C

(Ca
4 4

(Cas

(Case
˚C
e

˚C
as

25˚C
125
I B =100mA
(C

–55˚C
2 5˚ 2
12 C
5˚
V C E (sat) –5

0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚ C/W)

(V C E =4V)
50 8 2
t on• t s t g • t f (µ s)

125˚C 5
t s tg
DC Cur rent Gain h F E

Transient Thermal Resistance

1
25˚C V C C 200V
I C :I B 1 :–I B2 =10:1:2
–30˚C 0.5
1
Swi tchi ng T im e

0.5
10 t on

tf
5 0.1 0.1
0.02 0.05 0.1 0.5 1 5 10 12 0.5 1 5 10 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
30 30 80
10
0µ
s
M aximum Power Dissipa ti on P C (W)

10 10
60
W
Co lle ctor Cu rre nt I C ( A)

Collector Curr ent I C (A)

ith

5 5
In
fin
ite
he

40
at
si
nk

1 1
Without Heatsink
Natural Cooling
0.5 Without Heatsink 0.5 L=3mH 20
Natural Cooling –IB2=1A
Duty:less than 1%

Without Heatsink
3.5
0.1 0.1 0
5 10 50 100 500 5 10 50 100 500 0 50 100 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

96
 2SC4298
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol Ratings Unit Symbol Conditions Ratings Unit

0.8±0.2
15.6±0.2 5.5±0.2
VCBO 500 V ICBO VCB=500V 100max µA 3.45 ±0.2

µA

5.5
100max

9.5±0.2
VCEO 400 V IEBO VEB=10V
VEBO 10 V V(BR)CEO IC=25mA 400min V

23.0±0.3
ø3.3±0.2
IC 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 30 a

1.6
IB 5 VCE(sat) IC=8A, IB=1.6A 0.5max V b
A

3.0
PC 80(Tc=25°C) W VBE(sat) IC=8A, IB=1.6A 1.3max V

3.3
Tj 150 °C fT VCE=12V, IE=–1.5A 10typ MHz 1.75 0.8

16.2
2.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 85typ pF
1.05 +0.2
-0.1

5.45±0.1 5.45±0.1 0.65 +0.2 3.35

■Typical Switching Characteristics (Common Emitter)
-0.1

1.5 4.4 1.5

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
200 25 8 10 –5 0.8 –1.6 1max 3max 0.5max B C E b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V CE =4V)
15 1.5 10
Collector-Emitter Saturation Voltage V C E (s a t) (V )

5A 1. 2A
1.
Base-Emitter Saturation Voltage V B E (s at) (V)

800 mA 8

Collector Current I C (A)

Collector Current I C (A)

600m A V B E (sat)
10 1.0
e Temp) 6
–55˚C (Cas
400mA
Temp)

mp)
ase
25˚C (C

)
Temp

Temp)
e Te
)
Temp 4
(Case
p)

Cas
125˚C

(Case
200mA 0.5
em

(Case
5
˚C

˚C (
eT
25

25˚C
125
as

–55˚C
I B =100mA 2
C

(
C
5˚ ˚C
12 5
–5
V C E (sat)
0 0 0
0 1 2 3 4 0.03 0.05 0.1 0.5 1 5 10 20 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =4V)
50 8 2
t o n• t s t g• t f (µ s)

125˚C 5
t s tg
Transient Thermal Resistance
DC C urrent G ain h FE

25˚C V C C 200V 1
I C :I B1 :I B2 = 10:1:–2
–55˚C
1 0.5
Sw it ching Time

0.5
10 t on

tf
5 0.1 0.1
0.02 0.05 0.1 0.5 1 5 10 15 0.5 1 5 10 15 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
50 50 80
10

Ma xim um Powe r Dissipat io n P C (W)

0µ
s

60
W
ith
Collector Cur rent I C (A)

Collector Curr ent I C (A)

In
fin

10 10
ite
he

40
at
si
nk

5 5 Without Heatsink
Natural Cooling
Without Heatsink L=3mH
Natural Cooling IB2=–1A
Duty:less than 1% 20

Without Heatsink
3.5
1 1 0
5 10 50 100 500 5 10 50 100 500 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

97
 2SC4299
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol Ratings Unit Symbol Conditions Ratings Unit

0.8±0.2
15.6±0.2 5.5±0.2
VCBO 900 V ICBO VCB=800V 100max µA 3.45 ±0.2

µA

5.5
VCEO 800 IEBO VEB=7V 100max

9.5±0.2
V
VEBO 7 V V(BR)CEO IC=10mA 800min V

23.0±0.3
ø3.3±0.2
IC 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 a

1.6
IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max V b

3.0
PC 70(Tc=25°C) W VBE(sat) IC=1A, IB=0.2A 1.2max V

3.3
Tj 150 °C fT VCE=12V, IE=–0.3A 6typ MHz 1.75 0.8

16.2
2.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF +0.2
1.05 -0.1

5.45±0.1 5.45±0.1 0.65 +0.2 3.35

■Typical Switching Characteristics (Common Emitter)
-0.1

1.5 4.4 1.5

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
250 250 1 10 –5 0.15 –0.5 1max 5max 1max B C E b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
500mA 400mA (I C /I B =5) (V CE =4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )

3 3
Base-Emitter Saturation Voltage V B E (s at) (V)

300mA
1 V B E (sat)

Collector Current I C (A)

p)
–55˚C (Case Tem
Collector Current I C (A)

200mA
2 2
e Temp)
25˚C (Cas

mp)

mp)
100mA Temp)

p)
e Te
(Case

ase Tem
ase Te
125˚C

(Cas
e m p)

25˚C (C
1 I B =50mA 1

125˚C

–55˚C (C
eT
2 5 Cas

(
˚C

˚C
–55
V C E (sat) 5˚C
12
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 3 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) t on •t st g • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =4V)
50 8 3
t o n• t s t g• t f (µ s)

125˚C
5
t s tg
DC C urrent G ain h FE

Transient Thermal Resistance

25˚C VCC 250V

IC:IB1:–IB2
=2:0.3:1 Const.
1
Sw it ching Time

–55˚C
1
tf
10
0.5 0.5

t on
5 0.2 0.3
0.01 0.05 0.1 0.5 1 3 0.1 0.5 1 3 1 10 100 1000

Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
10 10 70

5 5 60
Ma xim um Powe r Dissipat io n P C (W)

10
0µ
s
W

50
ith
Collector Cur rent I C (A)

Collecto r Cur rent I C (A)

In
fin
ite

40
he

1 1
at
si
nk

30
Without Heatsink
0.5 0.5 Natural Cooling
Without Heatsink L=3mH 20
Natural Cooling IB2=–1.0A
Duty:less than 1%
10
Without Heatsink
0.1 3.5
0.1 0
50 100 500 1000 50 100 500 1000 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

98
 2SC4300
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol Ratings Unit Symbol Conditions Ratings Unit

0.8±0.2
15.6±0.2 5.5±0.2
VCBO 900 V ICBO VCB=800V 100max µA 3.45 ±0.2

µA

5.5
VCEO 800 IEBO VEB=7V 100max

9.5±0.2
V
VEBO 7 V V(BR)CEO IC=10mA 800min V

23.0±0.3
ø3.3±0.2
IC 5(Pulse10) A hFE VCE=4V, IC=2A 10 to 30 a

1.6
IB 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max V b

3.0
PC 75(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A 1.2max V

3.3
Tj 150 °C fT VCE=12V, IE=–0.5A 6typ MHz 1.75 0.8

16.2
2.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 75typ pF
1.05 +0.2
-0.1

5.45±0.1 5.45±0.1 0.65 +0.2 3.35

■Typical Switching Characteristics (Common Emitter)
-0.1

1.5 4.4 1.5

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs)
a. Part No.
250 125 2 10 –5 0.3 –1 1max 5max 1max B C E b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
700mA (I C /I B =5) (V CE =4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )

5 5
60 0m A
Base-Emitter Saturation Voltage V B E (s at) (V)

500m A

4 400 mA 4

Collector Current I C (A)

2
Collector Current I C (A)

300mA

3 3

mp)
200mA

)
Temp

p)
e Te

ase Tem
V B E (sat)

(Cas

(Case
2 1 2
I B =100mA –55˚C (Case Temp)

125˚C

–55˚C (C
25˚C (Case Temp)

25˚C
e Temp)
125˚C (Cas
m p)
C

1 1
– 5 5 ˚C
25˚
Te

e
C as
V C E (sat) 125˚C (
0 0 0
0 1 2 3 4 0.03 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =4V)
50 10 2
t on • t st g• t f (µ s)

5 t s tg
125˚C
D C Cur r ent Gai n h F E

Transient Thermal Resistance

VCC 250V
1
25˚C IC:IB1:–IB2
=2:0.3:1 Const.
0.5
Switching T im e

–55˚C
1 tf
10
0.5
t on

5 0.2 0.1
0.02 0.05 0.1 0.5 1 5 0.1 0.5 1 5 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 80

10 10
10
10

Maxim um Power Dissipatio n P C ( W)

5 0µ 5
µs

1m s
s 60
W
Collecto r Cur rent I C (A)

Co lle ctor Cu rren t I C ( A)

ith
In

1
fin

1
ite
he

0.5 40
0.5
at
si
nk

Without Heatsink
0.1 Without Heatsink 0.1 Natural Cooling
Natural Cooling L=3mH 20
0.05
0.05 IB2=–1.0A
Duty:less than 1%
Without Heatsink
3.5
0.01 0.01 0
10 50 100 500 1000 50 100 500 1000 0 50 100 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

99
 2SC4301
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol Ratings Unit Symbol Conditions Ratings Unit

0.8±0.2
15.6±0.2 5.5±0.2

VCBO 900 V ICBO VCB=800V 100max µA 3.45 ±0.2

µA

5.5
9.5±0.2
VCEO 800 V IEBO VEB=7V 100max
VEBO V(BR)CEO IC=10mA 800min

23.0±0.3
7 V V
ø3.3±0.2
IC 7(Pulse14) A hFE VCE=4V, IC=3A 10 to 30 a

1.6
IB VCE(sat) IC=3A, IB=0.6A 0.5max b
3.5 A V

3.0
PC 80(Tc=25°C) VBE(sat) IC=3A, IB=0.6A 1.2max V

3.3
W
Tj 150 °C fT VCE=12V, IE=–1A 6typ MHz 1.75 0.8

16.2
2.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 105typ pF
1.05 +0.2
-0.1

5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
■Typical Switching Characteristics (Common Emitter) 1.5 4.4 1.5
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
250 83 3 –5 –1.5 1max 5max B C E b. Lot No.
10 0.45 1max

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
1A (I C /I B =5) (V CE =4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )

7
700m A
Base-Emitter Saturation Voltage V B E (s at) (V)

6 V B E (sat) 6
1
500mA

Collector Current I C (A)

)
(Case Temp
Collector Current I C (A)

–55˚C

p)
300 mA ase Tem
4 25˚C (C 4

mp)

)
Temp

p)
)

e Te
emp
200mA ase T

ase Tem
(C
125˚C

(Cas

(Case
)
emp

I B =100mA

125˚C

–55˚C (C
eT

25˚C
2 2
as
(C
˚C

˚C
25

5
12
V C E (sat) 5˚C
–5
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 7 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) t on • t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚C /W )

(V C E =4V)
50 10 2
12
t on • t s t g• t f ( µ s)

5˚
25˚C C 5 t s tg
DC C urrent G ain h FE

Transient Thermal Resistance

VCC 250V 1
I C :I B1 :I B2 =2:0.3:–1 Const.
–55˚C
0.5
Sw it ching Time

1 tf

10
0.5
t on

5 0.2 0.1
0.02 0.05 0.1 0.5 1 5 7 0.1 0.5 1 5 7 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 80

10 10
Ma xim um Powe r Dissipation P C (W)

10
0µ
s
5 60
W

5
ith
Co lle ctor Cu rren t I C (A)

Collect or Cur ren t I C (A)

In
fin
ite
he

40
at
si

1 1
nk

Without Heatsink
Natural Cooling
0.5 Without Heatsink 0.5
L=3mH
Natural Cooling IB2=–1.0A 20
Duty :less than1%

Without Heatsink
3.5
0.1 0.1 0
50 100 500 1000 50 100 500 1000 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

100
 2SC4304
Silicon NPN Triple Diffused Planar Transistor (High Voltage High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol Ratings Unit Symbol Conditions Ratings Unit 4.2±0.2
10.1±0.2

4.0±0.2
2.8 c0.5
VCBO 900 V ICBO VCB=800V 100max µA
VCEO 800 V IEBO VEB=7V 100max µA

8.4±0.2
16.9±0.3
VEBO 7 V V(BR)CEO IC=10mA 800min V
ø3.3±0.2
IC hFE 10 to 30 a
3(Pulse6) A VCE=4V, IC=0.7A

0.8±0.2
b
IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max V
PC 35(Tc=25°C) VBE(sat) IC=0.7A, IB=0.14A 1.2max V

±0.2
3.9
W

13.0min
Tj 150 °C fT VCE=12V, IE=–0.3A 15typ MHz 1.35±0.15

1.35±0.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
B C E
250 357 0.7 10 –5 0.1 –0.35 0.7max 4.0max 0.7max b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V C E =4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )

3 3
700mA
Base-Emitter Saturation Voltage V B E (s at) (V )

500 mA
V C E (sat)
2
–55˚C (Case Temp)

Collector Current I C (A)

300m A
Collector Current I C (A)

25˚C (Case Temp)

2 125˚C (Case Temp) 2
200m A

mp)
mp)

p)
e Tem
e Te
e Te
100mA 1 V B E (sat)
p)
–55˚C (Case Tem

(Cas
Cas

(Cas
1 p) 1
25˚C (Case Tem

˚C (
I B =50mA

25˚C

–55˚C
Temp)

125
125˚C (Case

0 0 0
0 1 2 3 4 0.01 0.05 0.1 0.5 1 3 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j - a ( ˚ C/W)

(V C E =4V)
50 7 4
125˚C
t o n• t s t g• t f (µ s)

5
25˚C
DC C urrent G ain h FE

t s tg
Transient Thermal Resistance

V C C 250V
I C :I B1 :–I B 2 =10:1.5:5
–55˚C
1
Sw it ching Time

10 1
tf
0.5
5
t on 0.5

2 0.1 0.3
0.01 0.05 0.1 0.5 1 3 0.1 0.5 1 2 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
10 10 35

5 5
50

30
Ma xim um Powe r Dissipat io n P C (W)
µs
10
0µ

W
ith

1
s
Collector Curr ent I C (A)

Collecto r Cur rent I C (A)

1
1m
DC

In
s

fin
( Tc

0.5 0.5
ite
10
=2

20
ms

he
5

at
C
)

si
nk

0.1 0.1

0.05 Without Heatsink

0.05 10
Natural Cooling
Without Heatsink
L=3mH
Natural Cooling
IB2=–1.0A
Duty:less than 1%
0.01 0.01 Without Heatsink
2
0.005 0.005 0
2 5 10 50 100 500 1000 50 100 500 1000 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

101
 2SC4381/4382
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1667/1668) Application : TV Vertical Output, Audio Output Driver and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C)
External Dimensions FM20(TO220F)
Ratings Ratings
Symbol Unit Symbol Conditions Unit
2SC4381 2SC4382 2SC4381 2SC4382 10.1±0.2 4.2±0.2

4.0±0.2
2.8 c0.5
VCBO 150 200 V 10max µA
ICBO
VCEO 150 200 V VCB= 150 200

8.4±0.2
V

16.9±0.3
VEBO 6 V IEBO VEB=6V 10max µA ø3.3±0.2
a
IC 2 A V(BR)CEO IC=25mA 150min 200min V

0.8±0.2
b
IB 1 A hFE VCE=10V, IC=0.7A 60min

±0.2
3.9
PC 25(Tc=25°C) W VCE(sat) IC=0.7A, IB=0.07A 1.0max V

13.0min
Tj 150 °C fT VCE=12V, IE=–0.2A 15typ MHz 1.35±0.15

1.35±0.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 35typ pF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
B C E
20 20 1 10 –5 100 –100 1.0typ 3.0typ 1.5typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =10V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )

2 3 2
A
m
50

1.6

Collector Current I C (A)

Collector Current I C (A)

2
1.2

)
Temp

e Temp)

e Temp)
I B =5mA/Step
0.8

(Case
1

25˚C (Cas

–55˚C (Cas
125˚C
0.4

I C = 0 .5 2A
A 1A

0 0 0
0 2 4 6 8 10 2 10 100 1000 0 0.5 1.0
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚ C/W)

(V C E =10V) (V C E =10V)
400 400 6
DC Cur rent Gain h F E

DC Cur rent Gain h F E

Transient Thermal Resistance

125 ˚C

Typ
2 5 ˚C

100 100 – 3 0 ˚C

1
50 50

30 30 0.5
0.01 0.1 1 2 0.01 0.1 1 2 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
30 5 30
1m
5m
20

D
s
ms

M aximum Power Dissip ation P C (W)

C
Cut-o ff F requ ency f T (MH Z )

1
Collecto r Curr ent I C (A)

20 20
ith

Typ
In
fin
ite
he
at
si
nk

0.1
10 10
Without Heatsink
Natural Cooling
1.2SC4381
2.2SC4382
Without Heatsink
1 2
0 0.01 0
–0.01 –0.1 –0.5 –1 –2 1 10 100 300 0 50 100 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

102
 2SC4388
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1673) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol Ratings Unit Symbol Conditions Ratings Unit

0.8±0.2
15.6±0.2 5.5±0.2
VCBO 200 V ICBO VCB=200V 10max µA 3.45 ±0.2

µA

5.5
VCEO IEBO VEB=6V 10max

9.5±0.2
180 V
VEBO 6 V V(BR)CEO IC=50mA 180min V

23.0±0.3
IC 15 A hFE VCE=4V, IC=3A 50min∗ a
ø3.3±0.2

1.6
IB 4 A VCE(sat) IC=5A, IB=0.5A 2.0max V b

3.0
PC 85(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz

3.3
Tj 150 °C COB VCB=10V, f=1MHz 300typ pF 1.75 0.8

16.2
2.15
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1

5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
■Typical Switching Characteristics (Common Emitter)
1.5 4.4 1.5
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
40 4 10 10 –5 1 –1 0.5max 1.8max 0.6max B C E b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =4V)
15 3 15
Collector-Emitter Saturation Voltage V C E (s at) (V )

A mA
1A

m 0
00 50
7 A
300m

20 0m A

Collector Current I C (A)

Collector Current I C (A)

10 2 10

100 mA

mp)

Temp)
mp)
e Te

e Te
5 50mA 1 5

Cas

(Case
(Cas
˚C (
25˚C

–30˚C
125
I B =20mA I C =10A
5A

0 0 0
0 1 2 3 4 0 0.5 1.0 1.5 2.0 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚C /W)

(V C E =4V) (V C E =4V)
300 200 3
125˚C
DC Cur rent Gain h FE
DC Curr ent Gain h F E

Transient Thermal Resistance

100 1
100 Typ 25˚C

0.5
50 –30˚C
50

20 20 0.1
0.02 0.1 0.5 1 5 10 15 0.02 0.1 0.5 1 5 10 15 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
30 40 100
10
m
10 s
Typ 0m
Maxim um Power Dissipation P C (W)

s
10 80
Cut- off F req uency f T (M H Z )

DC
Collect or Cur ren t I C (A)

5
20
ith
In

60
fin
ite
he
at

1
si
nk

40
10 0.5

Without Heatsink
Natural Cooling 20

0.1
Without Heatsink
3.5
0 0.05 0
–0.02 –0.1 –1 –10 3 5 10 50 100 200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

103
 2SC4418
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol Ratings Unit Symbol Conditions Ratings Unit 10.1±0.2 4.2±0.2

4.0±0.2
2.8 c0.5
VCBO 500 V ICBO VCB=500V 100max µA
VCEO 400 V IEBO VEB=10V 100max µA

8.4±0.2
16.9±0.3
VEBO 10 V V(BR)CEO IC=25mA 400min V
ø3.3±0.2
a
IC 5(Pulse10) A hFE VCE=4V, IC=1.5A 10 to 30

0.8±0.2
b
IB 2 A VCE(sat) IC=1.5A, IB=0.3A 0.5max V
PC VBE(sat) IC=1.5A, IB=0.3A 1.3max

±0.2
3.9
30(Tc=25°C) W V

13.0min
Tj 150 °C fT VCE=12V, IE=–0.3A 20typ MHz 1.35±0.15

1.35±0.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 30typ pF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
B C E
200 133 1.5 10 –5 0.15 –0.3 1max 2.5max 0.5max b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V CE =4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )

5 5
A 1.4 A
1.8
Base-Emitter Saturation Voltage V B E (s at) (V )

V C E (sat)
1A
2 –55˚C (Case Temp)
4 4
25˚C (Case Temp)

Collector Current I C (A)

60 0m A
Collector Current I C (A)

125˚C (Case Temp)

400 mA
3 3

200 mA
V B E (sat)

Tem p)
1 2

em
2

e Te )
mp)
–55˚C (Case Temp)

p
100 mA

eT
Temp)
25˚C (Case

as
se
(C
p)
ase Tem

Cas
I B =50mA

Ca
12 5˚ C (C

5˚C
1 1

C(
˚C (
12

25˚
–55
0 0 0
0 1 2 3 4 0.01 0.05 0.1 0.5 1 5 0 1.0 1.6
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚C /W)

(V C E =4V)
100 8 5
t o n• t s t g• t f (µ s)

5
50 Typ
DC C urrent G ain h FE

Transient Thermal Resistance

V C C 200V t s tg
I C :I B 1 :I B2 =10:1:–2

1
Sw it ching Time

10
0.5 1

5 tf

t on 0.5
2 0.1 0.4
0.01 0.05 0.1 0.5 1 5 0.1 0.5 1 3 1 10 100 1000

Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 30

10 50 10
10 µs
0µ
M aximum Power Dissipa ti on P C ( W)

1m s
5 s 5
10
DC m
W

s
ith
Collector Cur rent I C (A)

Collect or Cur re nt I C (A)

20
In
fin

1 1
ite
he

0.5 0.5
at
si
nk

Without Heatsink 10
0.1 0.1 Natural Cooling
Without Heatsink L=3mH
0.05 0.05 IB2=–0.5A
Natural Cooling
Duty:less than 1%
Without Heatsink
2
0.01 0.01 0
2 5 10 50 100 500 5 10 50 100 500 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

104
 2SC4434
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator, Lighting Inverter, and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
15.6±0.4 4.8±0.2

5.0±0.2
2.0

1.8
VCBO 500 V ICBO VCB=500V 100max µA 9.6 2.0±0.1

VCEO 400 V IEBO VEB=10V 100max µA

19.9±0.3
VEBO 10 V V(BR)CEO IC=25mA 400min V

4.0
a ø3.2±0.1
IC 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 25
b
IB 5 A VCE(sat) IC=8A, IB=1.6A 0.7max V
PC 120(Tc=25°C) W VBE(sat) IC=8A, IB=1.6A 1.3max V 2

4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–1.5A 10typ MHz 3

Tstg –55 to +150 °C COB VCB=10V, f=1MHz 135typ pF 1.05 +0.2

-0.1 0.65 +0.2
-0.1

5.45±0.1 5.45±0.1 1.4

■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
200 25 8 10 –5 1.6 –3.2 0.5max 2.0max 0.15max b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V C E =4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )

10 15
A 1A
1.2 14
Base-Emitter Saturation Voltage V B E (s at) (V)

8 600 mA 12

Collector Current I C (A)

Collector Current I C (A)

10
400mA 1
6 V B E (sat)
8
7 5 ˚C

e Temp)
25˚C (Cas
)
emp

e Temp)

p)
p)
200m A as 6

p)
4 75˚C (C

Tem
Tem
em
eT

Temp)

eT
ase
as

se
50˚C (C

ase
1
(C

as

Ca
I B =100m A 4
˚C

C (C
(C
C

0˚

C(
25

2 15

0˚C

75˚

25˚
15
2
V C E (sat)

0 0 0
0 1 2 3 4 0.05 0.1 0.5 1 5 10 0 0.5 1.0
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Temperature Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚ C/W)

(V C E =4V)
50 5 2
150˚C
t o n • t s tg • t f ( µ s)

75˚C
DC Cur rent Gain h F E

Transient Thermal Resistance

t s tg 1
25˚C
1 V C C 200V
I C :I B 1 :–I B2 =5:1:2
0.5
Switching Ti me

0.5

t on
10
0.1 tf

5 0.05 0.1
0.05 0.1 0.5 1 5 10 15 0.5 1 5 10 15 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
40 40 120
10
0µ
s
M aximum Power Dissipa ti on P C (W)

100
10 10
W
ith
Collect or Cur ren t I C (A)

Collector Cur rent I C (A)

5
In

5
fin
ite
he
at
si
nk

1 50
1
Without Heatsink
Natural Cooling
0.5 Without Heatsink 0.5 L=3mH
Natural Cooling IB2=–1A
Duty:less than 1%

Without Heatsink
0.1 3.5
0.1 0
5 10 50 100 500 5 10 50 100 500 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

105
 2SC4445
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol Ratings Unit Symbol Conditions Ratings Unit

0.8±0.2
15.6±0.2 5.5±0.2
VCBO 900 V ICBO VCB=800V 100max µA 3.45 ±0.2

µA

5.5
800 IEBO

9.5±0.2
VCEO V VEB=7V 100max
VEBO 7 V V(BR)CEO IC=10mA 800min V

23.0±0.3
ø3.3±0.2
IC 3(Pulse6) A hFE VCE=4V, IC=0.7A 10 to 30 a

1.6
IB 1.5 VCE(sat) IC=0.7A, IB=0.14A 0.5max V b
A

3.0
PC 60(Tc=25°C) W VBE(sat) IC=0.7A, IB=0.14A 1.2max V

3.3
Tj 150 °C fT VCE=12V, IE=–0.3A 15typ MHz 1.75 0.8

16.2
2.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF
1.05 +0.2
-0.1

5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
■Typical Switching Characteristics (Common Emitter)
1.5 4.4 1.5
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
250 357 0.7 10 –5 0.1 –0.35 0.7max 4max 0.7max B C E b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V C E =4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )

3 3
I B =700mA
Base-Emitter Saturation Voltage V B E (s at) (V )

500 mA
V C E (sat)
2
–55˚C (Case Temp)

Collector Current I C (A)

300m A
Collector Current I C (A)

25˚C (Case Temp)

2 125˚C (Case Temp) 2
200m A

mp)
mp)

p)
e Tem
e Te
e Te
100mA 1 V B E (sat)
p)
–55˚C (Case Tem

(Cas
Cas

(Cas
1 p) 1
25˚C (Case Tem

˚C (
50mA

25˚C

–55˚C
Temp)

125
125˚C (Case

0 0 0
0 1 2 3 4 0.01 0.05 0.1 0.5 1 3 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Temperature Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j - a ( ˚ C/W)

(V C E =4V)
50 7 4
125˚C
t o n• t s t g• t f (µ s)

5
25˚C
DC C urrent G ain h FE

V C C 250V t s tg
Transient Thermal Resistance

I C :I B1 :–I B 2 =10:1.5:5
–55˚C
1
Sw it ching Time

10 1
tf
0.5
5
t on 0.5

2 0.1 0.3
0.01 0.05 0.1 0.5 1 3 0.1 0.5 1 2 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
10 10 60

5 5
Ma xim um Powe r Dissipat io n P C (W)
50

W
10

µs

ith
Collector Curr ent I C (A)

Collector Curr ent I C (A)

0µ

40
In
s

fin
ite

1 1
he
at
si
nk

0.5 0.5

20
Without Heatsink
Natural Cooling
Without Heatsink
L=3mH
Natural Cooling
IB2=–1.0A
0.1 0.1 Duty:less than 1%
Without Heatsink
3.5
0.05 0.05 0
5 10 50 100 500 1000 5 10 50 100 500 1000 0 50 100 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

106
 2SC4466
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1693) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
15.6±0.4 4.8±0.2

5.0±0.2
µA

2.0

1.8
VCBO 120 V ICBO VCB=120V 10max 9.6 2.0±0.1

VCEO 80 V IEBO VEB=6V 10max µA

VEBO 6 V(BR)CEO IC=50mA 80min V

19.9±0.3
V

4.0
a
IC 6 A hFE VCE=4V, IC=2A 50min∗ ø3.2±0.1
b
IB 3 A VCE(sat) IC=2A, IB=0.2A 1.5max V
PC 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz 2

4.0max
20.0min
Tj 150 °C COB VCB=10V, f=1MHz 110typ pF 3

Tstg –55 to +150 °C ∗hFE Rank O(50 to100), P(70 to140), Y(90 to180) 1.05 +0.2
-0.1 0.65 +0.2
-0.1

■Typical Switching Characteristics (Common Emitter) 5.45±0.1 5.45±0.1 1.4

B C E
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
30 10 3 10 –5 0.3 –0.3 0.16typ 2.60typ 0.34typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =4V)
6 3 6
Collector-Emitter Saturation Voltage V C E (s at) (V )

A A A A
0m m 80m
0m 1 00
20 15

Collector Current I C (A)

Collector Current I C (A)

50 mA
4 2 4

30mA

mp)

)
p)

Temp
e Te
e Tem
2 20mA 1 2

Cas

(Case
(Cas
˚C (
I B =10mA

–30˚C
25˚C
125
I C =6A
4A
2A
0 0 0
0 1 2 3 4 0 0.5 1.0 1.5 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚ C/W)

(V C E =4V) (V C E =4V)
300 200 5
125˚C
DC Cur rent Gain h FE
DC Curr ent Gain h F E

Transient Thermal Resistance

100 25˚C
Typ
100
–30˚C
1
50

50
0.5

30 20 0.3
0.02 0.1 0.5 1 56 0.02 0.1 0.5 1 56 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
40 20 60

10 1m
M aximum Power Dissipa ti on P C (W)

10 s
10 ms
Cu t-off Fre quen cy f T (M H Z )

30 5 0m
W

s
Collector Curr ent I C ( A)

ith

DC 40
In

Typ
fin
ite
he

20
at
si

1
nk

20
0.5
10 Without Heatsink
Natural Cooling

Without Heatsink
3.5
0 0.1
–0.02 –0.1 –1 –6 5 10 50 100 0
0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

107
 2SC4467
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1694) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
15.6±0.4 4.8±0.2

5.0±0.2
µA

2.0

1.8
VCBO 160 V ICBO VCB=160V 10max 9.6 2.0±0.1

VCEO 120 V IEBO VEB=6V 10max µA

VEBO V(BR)CEO IC=50mA 120min V

19.9±0.3
6 V

4.0
a
IC 8 A hFE VCE=4V, IC=3A 50min∗ ø3.2±0.1
b
IB 3 A VCE(sat) IC=3A, IB=0.3A 1.5max V
PC 80(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz 2

4.0max
20.0min
Tj 150 °C COB VCB=10V, f=1MHz 200typ pF 3

Tstg –55 to +150 °C ∗hFE Rank O(50 to100), P(70 to140), Y(90 to180) 1.05 +0.2
-0.1 0.65 +0.2
-0.1

5.45±0.1 5.45±0.1 1.4

■Typical Switching Characteristics (Common Emitter) B C E
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
40 10 4 10 –5 0.4 –0.4 0.13typ 3.50typ 0.32typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =4V)
8 3 8
Collector-Emitter Saturation Voltage V C E (s at) (V )

A
A

m m A
0m
350m

1 50 100
20

75 m A

6 6

Collector Current I C (A)

Collector Current I C (A)

2
50m A

4 4

mp)

)
mp)

Temp
e Te
20mA

e Te
1

Cas

(Case
(Cas
2 2

˚C (

–30˚C
25˚C
125
I B =10mA
I C =8A
4A
2A
0 0 0
0 1 2 3 4 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1.0 1.5
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚ C/W)

(V C E =4V) (V C E =4V)
200 200 3
125˚C
DC Curr ent Gain h FE

DC Curr ent Gain h FE

Transient Thermal Resistance

Typ
100 100 25˚C

–30˚C 1

50 50

0.5

20 20 0.3
0.02 0.1 0.5 1 5 8 0.02 0.1 0.5 1 5 8 1 10 100 1000

Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
40 20 80
10
m
s
10 100ms
M aximum Power Dissipa ti on P C ( W)

30
Cut-o ff Fr equ ency f T (M H Z )

60
W

5
ith
Collector Cur rent I C (A)

Typ DC
In
fin
ite
he

20 40
at
si

1
nk

0.5
10 20
Without Heatsink
Natural Cooling

Without Heatsink
3.5
0 0.1 0
–0.02 –0.1 –1 –8 5 10 50 100 200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

108
 2SC4468
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1695) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
15.6±0.4 4.8±0.2

5.0±0.2
µA

2.0
10max

1.8
VCBO 200 V ICBO VCB=200V 9.6 2.0±0.1

VCEO 140 V IEBO VEB=6V 10max µA

VEBO 6 V V(BR)CEO IC=50mA 140min V

19.9±0.3

4.0
IC 10 A hFE VCE=4V, IC=3A 50min∗ a ø3.2±0.1
b
IB 4 A VCE(sat) IC=5A, IB=0.5A 0.5max V
PC 100(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz 2

4.0max
20.0min
Tj 150 °C COB VCB=10V, f=1MHz 250typ pF 3
Tstg –55 to +150 °C ∗hFE Rank O(50 to100), P(70 to140), Y(90 to180) 1.05 +0.2
-0.1 0.65 +0.2
-0.1

■Typical Switching Characteristics (Common Emitter) 5.45±0.1 5.45±0.1 1.4

B C E
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
60 12 5 10 –5 0.5 –0.5 0.24typ 4.32typ 0.40typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =4V)
10 3 10
Collector-Emitter Saturation Voltage V C E (s at) (V )

A mA
A

A
00
m 150
0m

0m 2
30
40

8 A 8
100m

Collector Current I C (A)

Collector Current I C (A)

75 m A 2
6 6

50 mA

mp)
4

Temp)
)
4

Temp
e Te
1
20mA

Cas
(Case

(Case
˚C (
2 2

25˚C

–30˚C
I B =10mA I C =10A 125
5A

0 0 0
0 1 2 3 4 0 0.5 1.0 1.5 2.0 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚C /W)

(V C E =4V) (V C E =4V)
200 300 3
DC Cur rent Gain h FE

DC Curr ent Gain h FE

125˚C
Transient Thermal Resistance

Typ
100 1
100 25˚C

0.5
50 –30˚C
50

20 20 0.1
0.02 0.1 0.5 1 5 10 0.02 0.1 0.5 1 5 10 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
40 30 100

3m
s
M aximum Power Dissipa ti on P C (W)

10
Cut- off F req uency f T (M H Z )

30
10

W
10

DC
ith
0m
Collector Curre nt I C ( A)

ms

Typ 5
s

In
fin
ite
he

20 50
at
si
nk

0.5
10 Without Heatsink
Natural Cooling

Without Heatsink
0.1 3.5
0 0
–0.02 –0.1 –1 –10 3 5 10 50 100 200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

109
 High hFE
LOW VCE (sat) 2SC4495
Silicon NPN Triple Diffused Planar Transistor Application : Audio Temperature Compensation and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol Ratings Unit Symbol Conditions Ratings Unit 4.2±0.2
10.1±0.2

4.0±0.2
2.8 c0.5
VCBO 80 V ICBO VCB=80V 10max µA
VCEO 50 V IEBO VEB=6V 10max µA

8.4±0.2
16.9±0.3
VEBO 6 V V(BR)CEO IC=25mA 50min V
ø3.3±0.2
IC 3 A hFE VCE=4V, IC=0.5A 500min a

0.8±0.2
b
IB 1 A VCE(sat) IC=1A, IB=20mA 0.5max V
PC 25(Tc=25°C) W fT VCE=12V, IE=–0.1A 40typ MHz

±0.2
3.9
13.0min
Tj 150 °C COB VCB=10V,f=1MHz 30typ pF 1.35±0.15

Tstg 1.35±0.15
–55 to +150 °C
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
B C E
20 20 1 10 –5 15 –30 0.45typ 1.60typ 0.85typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sa t ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V CE =4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )

3 1.5 3
A A
3 0m 1 8m
A
12m
2.5
8mA

Collector Current I C (A)

Collector Current I C (A)

2 1 2
5m A

3mA 1.5
2mA

Temp)
p)
Tem
mp)
1 0.5 3A 1

e Te
se
1mA

(Case
(Ca
(Cas
I B =0.5mA 2A

˚C

–55˚C
0.5
125

25˚C
I C =1A

0 0 0
0 1 2 3 4 5 6 1 10 100 1000 0 0.5 1 1.5
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =4V) (V C E =4V)
3000 5000 7
125˚C
Typ 25˚C 5
DC Cur rent Gain h FE

D C Cur r ent Gai n h FE

Transient Thermal Resistance

1000 1000 –55˚C

500
500

100

50

100 20 1
0.01 0.1 0.5 1 3 0.01 0.1 0.5 1 3 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
60 10 30
Natural Cooling
Silicone Grease
5 1m
Heatsink: Aluminum
M aximum Power Dissipa tion P C (W)

s
10 in mm
m
Cu t-off Fre quen cy f T ( MH Z )

s
Typ
Collect or Cur ren t I C (A)

10

40 DC 20
0m

W
s

ith
1 In
fin
ite
150x150x2
0.5 he
1 00x 1 0 at
0x si
20 2 nk
10
Without Heatsink
50x50x2
Natural Cooling
0.1
Without Heatsink
2
0 0.05 0
–0.005 –0.01 –0.1 –1 3 5 10 50 100 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

110
 2SC4511
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1725) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol Ratings Unit Symbol Conditions Ratings Unit 10.1±0.2 4.2±0.2

4.0±0.2
2.8 c0.5
VCBO 120 V ICBO VCB=120V 10max µA
VCEO 80 V IEBO VEB=6V 10max µA

8.4±0.2
16.9±0.3
VEBO 6 V V(BR)CEO IC=25mA 80min V
ø3.3±0.2
IC 6 A hFE VCE=4V, IC=2A 50min∗ a

0.8±0.2
b
IB 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V
PC fT VCE=12V, IE=–0.5A 20typ MHz

±0.2
3.9
30(Tc=25°C) W

13.0min
Tj 150 °C COB VCB=10V, f=1MHz 110typ pF 1.35±0.15

1.35±0.15
Tstg –55 to +150 °C ∗hFE Rank O(50 to100), P(70 to140), Y(90 to180)
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
B C E
30 10 3 10 –5 0.3 –0.3 0.16typ 2.60typ 0.34typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V CE =4V)
6 3 6
Collector-Emitter Saturation Voltage V C E (s at) (V )

A A A A
0m m 80m
0m 1 00
20 15
5

Collector Current I C (A)

Collector Current I C (A)

50 mA
4 2 4

3 30mA

e Tem )
mp

)
p)

Temp
e Te
2 20mA 1 2

Cas

(Case
(Cas
˚C (
I B =10mA

–30˚C
25˚C
125
1
I C =6A
4A
2A
0 0 0
0 1 2 3 4 0 0.5 1.0 1.5 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =4V) (V C E =4V)
300 200 5
125˚C
DC Cur rent Gain h FE
DC Curr ent Gain h F E

Transient Thermal Resistance

100 25˚C
Typ
100
–30˚C
50 1

50

0.5
30 20 0.4
0.02 0.1 0.5 1 56 0.02 0.1 0.5 1 56 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
40 20 30

10
10 m
s
M aximum Power Dissipa ti on P C (W)

5 10
Cu t-off Fre quen cy f T (M H Z )

30 0m
W

DC s
ith
Collector Curre nt I C ( A)

20
In

Typ
fin
ite
he

20 1
at
si
nk

0.5
10
10
Without Heatsink
Natural Cooling
0.1
Without Heatsink
2
0 0.05
–0.02 –0.1 –1 –6 3 5 10 50 100 0
0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

111
 2SC4512
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1726) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-25(TO220)
Symbol Ratings Unit Symbol Conditions Ratings Unit
10.2±0.2 4.8±0.2

3.0±0.2
VCBO 120 V ICBO VCB=120V 10max µA 2.0±0.1

VCEO 80 V IEBO VEB=6V 10max µA

VEBO 6 V(BR)CEO IC=25mA 80min V

16.0±0.7
V

8.8±0.2
IC hFE 50min a ø3.75±0.2
6 A VCE=4V, IC=2A
b
IB 3 A VCE(sat) IC=5A, IB=0.2A 0.5max V
PC 50(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz 1.35

4.0max
12.0min
Tj 150 °C COB VCB=10V, f=1MHz 110typ pF
Tstg –55 to +150 °C ∗hFE Rank O(50 to100), P(70 to140), Y(90 to180) 0.65 +0.2
-0.1

■Typical Switching Characteristics (Common Emitter) 2.5

B C E
2.5 1.4

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.6g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
30 10 3 10 –5 0.3 –0.3 0.16typ 2.60typ 0.34typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V CE =4V)
6 3 6
Collector-Emitter Saturation Voltage V C E (s at) (V )

A A A A
0m m 80m
0m 1 00
20 15

Collector Current I C (A)

Collector Current I C (A)

50 mA
4 2 4

30mA

e Tem )
mp

)
p)

Temp
e Te
2 20mA 1 2

Cas

(Case
(Cas
˚C (
I B =10mA

–30˚C
25˚C
125
I C =6A
4A
2A
0 0 0
0 1 2 3 4 0 0.5 1.0 1.5 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚ C/W)

(V C E =4V) (V C E =4V)
300 200 5
125˚C
DC Cur rent Gain h FE
DC Curr ent Gain h F E

Transient Thermal Resistance

100 25˚C
Typ
100
–30˚C
50 1

50

0.5
30 20 0.4
0.02 0.1 0.5 1 56 0.02 0.1 0.5 1 56 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
40 20 50

10
100ms 10
m
Ma xim um Powe r Dissipation P C (W)

5 s
40
Cu t-off Fre quen cy f T (M H Z )

30
W

DC
ith
Collector Curre nt I C ( A)

In

Typ
fin

30
ite
he

20 1
at
si
nk

0.5 20

10
Without Heatsink
Natural Cooling 10
0.1
Without Heatsink
2
0 0.05
–0.02 –0.1 –1 –6 3 5 10 50 100 0
0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

112
 2SC4517/4517A
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C)
External Dimensions FM20(TO220F)
Ratings Ratings
Symbol Unit Symbol Conditions Unit
2SC4517 2SC4517A 2SC4517 2SC4517A 10.1±0.2 4.2±0.2

4.0±0.2
2.8 c0.5
VCBO 900 1000 V ICBO VCB=800V 100max µA
µA

8.4±0.2
VCEO 550 V IEBO VEB=7V 100max

16.9±0.3
VEBO 7 V V(BR)CEO IC=10mA 550min V ø3.3±0.2
a
IC 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30

0.8±0.2
b

IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max V

±0.2
3.9
PC 30(Tc=25°C) W VBE(sat) IC=1A, IB=0.2A 1.2max V

13.0min
1.35±0.15
Tj 150 °C fT VCE=12V, IE=–0.25A 6typ MHz
1.35±0.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 35typ pF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
B C E
250 250 1 10 –5 0.15 –0.45 0.7max 4max 0.5max b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
A (V CE =4V)
Collector-Emitter Saturation Voltage V C E (sa t) (V )

3 0m 1.5 3
40 300mA I C /I B =5 Const.
Base-Emitter Saturation Voltage V B E (s at) (V)

200 mA

Collector Current I C (A)

Collector Current I C (A)

150 mA
2 1.0 2

100m A V B E (sat)

1 I B =40mA 0.5 1

V C E (sat)
0 0 0
0 1 2 3 4 0.03 0.05 0.1 0.5 1 5 0 0.2 0.4 0.6 0.8 1.0
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Temperature Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚ C/W)

(V C E =4V)
50 7 4
t o n• t s tg • t f (µ s)

5
125˚C
DC Cur rent Gain h FE

t s tg
Transient Thermal Resistance

25˚C V C C 250V
I C :I B 1 :I B2 =1:0.15:–0.45

1
Switching Ti me

–55˚C
1
0.5 tf
10
t on 0.5

5 0.1 0.3
0.02 0.05 0.1 0.5 1 3 0.2 0.5 1 3 1 10 100 1000

Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
10 10 30
50
µs
5 10 5
0µ
Maxim um Power Dissi pation P C (W)

s
W
ith
Co lle ctor Cu rren t I C (A)

Collecto r Cur rent I C (A)

1 1 20
In
fin
ite

0.5 0.5
he
at
si
nk

Without Heatsink
0.1 0.1 10
Natural Cooling
Without Heatsink L=3mH
0.05 0.05 IB2=–1.0A
Natural Cooling
Duty:less than 1%
Without Heatsink
2SC4517 2SC4517A 2
0.01 0.01 0
2 5 10 50 100 500 1000 50 100 500 1000 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

113
 2SC4518/4518A
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C)
External Dimensions FM20(TO220F)
Ratings Ratings
Symbol Unit Symbol Conditions Unit
2SC4518 2SC4518A 2SC4518 2SC4518A 10.1±0.2 4.2±0.2

4.0±0.2
2.8 c0.5
VCBO 900 1000 V ICBO VCB=800V 100max µA
µA

8.4±0.2
VCEO 550 V IEBO VEB=7V 100max

16.9±0.3
VEBO 7 V V(BR)CEO IC=10mA 550min V ø3.3±0.2
a
IC 5(Pulse10) A hFE VCE=4V, IC=1.8A 10 to 25

0.8±0.2
b
IB 2.5 A VCE(sat) IC=1.8A, IB=0.36A 0.5max V

±0.2
3.9
PC 35(Tc=25°C) W VBE(sat) IC=1.8A, IB=0.36A 1.2max V

13.0min
Tj 1.35±0.15
150 °C fT VCE=12V, IE=–0.35A 6typ MHz
1.35±0.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
B C E
250 139 1.8 10 –5 0.27 –0.9 0.7max 4max 0.5max b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(V CE =4V)
Collector-Emitter Saturation Voltage V C E (s at ) (V )

5 1.5 5
0 mA 600mA I C /I B =5 Const.
70
Base-Emitter Saturation Voltage V B E (s at) (V)

400 mA
4 4

Collector Current I C (A)

Collector Current I C (A)

250 mA 1.0
3 3
V B E (sat)
150 mA

2 2
0.5
I B =50mA
1 1

V C E (sat)
0 0 0
0 1 2 3 4 0.03 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Temperature Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚C /W)

(V C E =4V)
50 7 4
t on• t s t g • t f (µ s)

5
125˚C
DC Cur rent Gain h F E

Transient Thermal Resistance

t s tg
25˚C V C C 250V
I C :I B 1 :I B 2 =1:0.15:–0.5

1
Swi tchi ng T im e

–55˚C
tf 1
0.5
10
t on 0.5

5 0.1 0.3
0.02 0.05 0.1 0.5 1 5 0.2 0.5 1 5 1 10 100 1000

Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 35

10 10 10
0µ
s 30
M aximum Power Dissip ation P C (W)

5 5
W
ith
Collecto r Curr ent I C (A)

Collector Curr ent I C ( A)

In
fin
ite

20
1 1
he
at
si

0.5
nk

0.5

Without Heatsink
Natural Cooling 10
L=3mH
Without Heatsink IB2=–1.0A
0.1 0.1
Natural Cooling Duty:less than 1%
0.05 0.05 Without Heatsink
2SC4518 2SC4518A 2
0.03 0.03 0
10 50 100 500 1000 50 100 500 1000 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

114
 2SC4546
Silicon NPN Triple Diffused Planar Transistor (High Voltage and Ultra-high Speed Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol Ratings Unit Symbol Conditions Ratings Unit 10.1±0.2 4.2±0.2

4.0±0.2
2.8 c0.5
VCBO 600 V ICBO VCB=600V 100max µA
VCEO 400 V IEBO VEB=7V 100max µA

8.4±0.2
16.9±0.3
VEBO 7 V V(BR)CEO IC=25mA 400min V
ø3.3±0.2
10 to 25 a
IC 7(Pulse14) A hFE VCE=4V, IC=3A

0.8±0.2
b
IB 2 A VCE(sat) IC=3A, IB=0.6A 0.7max V
PC VBE(sat) IC=3A, IB=0.6A 1.3max V

±0.2
3.9
30(Tc=25°C) W

13.0min
Tj 150 °C fT VCE=12V, IE=–0.5A 10typ MHz 1.35±0.15

1.35±0.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 55typ pF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
B C E
200 67 3 10 –5 0.6 –1.2 0.5max 2max 0.15max b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I C Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )

7 1.0 7
1A 800mA I C / I B =5 Const.

6 60 0m A 6

Collector Current I C (A)

40 0m A
Collector Current I C (A)

5 5

300 mA
4 4
200m A 0.5
3 3

)
mp)
Temp
p)
125˚C (Case Temp)

Tem

e Te
(Case
2 2

se

(Cas
25˚C (Case Temp)

(Ca
I B =50m A

25˚C

–30˚C
˚C
1 1

125
–30˚C (Case Temp)
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 0 0.5 1.0
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Temperature Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚ C/W)

(V C E =4V)
50 2 4
125˚C t s tg
t o n• t s t g• t f (µ s)

1
DC C urrent G ain h FE

Transient Thermal Resistance

25˚C
0.5
–30˚C tf
Sw it ching Time

1
t on
0.1
10
0.05 0.5
V C C 200V
I C :I B1 :I B 2 =5:1:–2
5 0.02 0.3
0.02 0.05 0.1 0.5 1 5 7 0.2 0.5 1 5 1 10 100 1000

Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 30

10
10 0µ 10
Ma xim um Powe r Dissipat io n P C (W)

5
W

5
ith
Collector Cur rent I C (A)

Co lle ctor Cu rren t I C ( A)

20
In
fin
ite
he
at
si

1 1
nk

Without Heatsink
Natural Cooling 10
0.5 0.5
Without Heatsink L=3mH
Natural Cooling IB2=–0.5A
Duty:less than 1%

Without Heatsink
2
0.1 0.1 0
10 50 100 500 700 10 50 100 500 700 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

115
 2SC4557
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol Ratings Unit Symbol Conditions Ratings Unit

0.8±0.2
15.6±0.2 5.5±0.2
VCBO 900 V ICBO VCB=800V 100max µA 3.45 ±0.2

µA

5.5
9.5±0.2
VCEO 550 V IEBO VEB=7V 100max
VEBO 7 V V(BR)CEO IC=10mA 550min V

23.0±0.3
ø3.3±0.2
IC 10(Pulse20) A hFE VCE=4V, IC=5A 10 to 28 a

1.6
IB 5 VCE(sat) IC=5A, IB=1A 0.5max V b
A

3.0
PC 80(Tc=25°C) W VBE(sat) IC=5A, IB=1A 1.2max V

3.3
Tj 150 °C fT VCE=12V, IE=–1A 6typ MHz 1.75 0.8

16.2
2.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 105typ pF
1.05 +0.2
-0.1

■Typical Switching Characteristics (Common Emitter) 5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35

1.5 4.4 1.5

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
250 50 5 10 –5 0.75 –1.5 1max 5max 0.5max B C E b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V CE =4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )

10 2 10
A
1.2 1A
Base-Emitter Saturation Voltage V B E (s at) (V )

80 0m A

8 8
600 mA

Collector Current I C (A)

Collector Current I C (A)

6 400m A 6

1 V B E (sat)

p)

)
Temp

Temp)
em
200mA –55˚C (Case Temp)

eT
4 4
Temp)
25˚C (Case

(Case
Cas

(Case
p)
ase Tem

˚C (
I B =100mA 125˚C (C

25˚C
25˚C

125

–55˚C
2 2
p)
Te m
ase
V C E (sat) 125˚C (C 5˚C
0 –5
0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Temperature Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j- a (˚ C/W)

(V C E =4V)
50 10 2
125˚ C
t o n• t s t g• t f (µ s)

t s tg
5
DC C urrent G ain h FE

25 ˚C
Transient Thermal Resistance

V C C 250V 1
I C :I B1 :–I B2 =10:1.5:3

–5 5˚ C
0.5
Sw it ching Time

0.5
10 t on

tf
5 0.1 0.1
0.02 0.05 0.1 0.5 1 5 10 0.2 0.5 1 5 10 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 80

10 10 10
Ma xim um Powe r Dissipat io n P C (W)

0µ
s
60
W

5 5
ith
Collector Cur rent I C (A)

Collect or Cur re nt I C (A)

In
fin
ite
he

40
at
si

1 1
nk

Without Heatsink
Natural Cooling
0.5 Without Heatsink 0.5
L=3mH
Natural Cooling IB2=–1.0A 20
Duty:less than 1%

Without Heatsink
3.5
0.1 0.1 0
10 50 100 500 1000 10 50 100 500 1000 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

116
 2SC4662
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol Ratings Unit Symbol Conditions Ratings Unit 4.2±0.2
10.1±0.2

4.0±0.2
2.8 c0.5
VCBO 500 V ICBO VCB=500V 100max µA
VCEO 400 V IEBO VEB=10V 100max µA

8.4±0.2
16.9±0.3
VEBO 10 V V(BR)CEO IC=25mA 400min V
ø3.3±0.2
IC 5(Pulse10) hFE VCE=4V, IC=1.5A 10 to 30 a
A

0.8±0.2
b
IB 2 A VCE(sat) IC=1.5A, IB=0.3A 0.5max V
PC 30(Tc=25°C) W VBE(sat) IC=1.5A, IB=0.3A 1.3max V

±0.2
3.9
13.0min
Tj 150 °C fT VCE=12V, IE=–0.3A 20typ MHz 1.35±0.15

Tstg COB VCB=10V, f=1MHz 30typ 1.35±0.15

–55 to +150 °C pF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
B C E
200 133 1.5 10 –5 0.15 –0.3 1max 2.5max 0.5max b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V C E =4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )

2 5
Base-Emitter Saturation Voltage V B E (s at) (V)

Collector Current I C (A)

–55˚C
3

1 V B E (sat)
Temp)
–55˚C (Case

p)

)
mp)
Temp
em
mp) 2
Te
25˚C (Case

e Te
eT

(Case
Cas
p)
)

ase Tem

(Cas
mp

125˚C (C

˚C (
Te

–55˚C
1

25˚C
e

as

125
C (C
V C E (sat) 125˚
25˚C
0 0
0.01 0.05 0.1 0.5 1 5 0 0.2 0.4 0.6 0.8 1.0 1. 2 1.4
Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Temperature Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j - a ( ˚ C/W)

(V C E =4V)
50 3 5
125˚C V C C 200V
t o n• t s t g• t f (µ s)

I C :I B 1 :I B2 =10:1:–2
DC C urrent G ain h FE

Transient Thermal Resistance

25˚C t s tg
1

–55˚C
Sw it ching Time

0.5

t on 1
10

tf
0.5
5 0.1 0.4
0.01 0.05 0.1 0.5 1 5 0.1 0.5 1 3 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 30

10 10
Ma xim um Powe r Dissipat io n P C (W)

10
0µ
5 s
5
W
ith
Collector Cur rent I C (A)

Collect or Cur re nt I C (A)

20
In
fin
ite
he
at
si

1 1
nk

Without Heatsink
Natural Cooling 10
0.5 Without Heatsink 0.5
L=3mH
Natural Cooling IB2=–0.5A
Duty:less than 1%

Without Heatsink
2
0.1 0.1 0
5 10 50 100 500 5 10 50 100 500 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

117
 2SC4706
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
15.6±0.4 4.8±0.2

5.0±0.2
µA

2.0

1.8
VCBO 900 V ICBO VCB=800V 100max 9.6 2.0±0.1

VCEO 600 V IEBO VEB=7V 100max µA

VEBO 7 V V(BR)CEO IC=10mA 600min V

19.9±0.3

4.0
a
IC 14(Pulse28) A hFE VCE=4V, IC=7A 10 to 25 ø3.2±0.1
b
IB 7 A VCE(sat) IC=7A, IB=1.4A 0.5max V
PC 130(Tc=25°C) W VBE(sat) IC=7A, IB=1.4A 1.2max V 2

4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–1.5A 6typ MHz 3
Tstg –55to+150 °C COB VCB=10V, f=1MHz 160typ pF 1.05 +0.2
-0.1 0.65 +0.2
-0.1

■Typical Switching Characteristics (Common Emitter) 5.45±0.1 5.45±0.1 1.4

B C E
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
250 35.7 7 10 –5 1.05 –3.5 1max 5max 0.7max b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(V CE =4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )

14 2 14
6 A 1.2 A I C /I B =5 Const.
1.
Base-Emitter Saturation Voltage V B E (s at) (V)

12 12

Collector Current I C (A)

800mA
Collector Current I C (A)

10 10
600mA

8 8
400m A

)
1

emp

mp)

)
Temp
6 6

eT

e Te
V B E (sat)

Cas

(Case
(Cas
200mA

˚C (
4 4

25˚C
125

–55˚C
I B =100mA
2 2

V C E (sat)
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Temperature Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

(V C E =4V)
50 8
t o n• t s t g• t f (µ s)

125˚C 5
DC C urrent G ain h FE

t s tg
V C C 250V
25˚C
I C :I B1 :–I B2 =10:1.5:5

1
Sw it ching Time

–55˚C
t on
0.5
tf
10

5 0.1
0.02 0.05 0.1 0.5 1 5 10 14 0.2 0.5 1 5 10 14
Collector Current I C (A) Collector Current I C (A)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
50 50 130

10
0µ
Ma xim um Powe r Dissipat io n P C (W)

s
100
10 10
W
ith
Collector Cur rent I C (A)

Collector Curr ent I C (A)

In

5
fin
ite
he
at
si
nk

Without Heatsink
1 1 Natural Cooling 50
L=3mH
IB2=–1.0A
0.5 Without Heatsink 0.5 Duty:less than 1%
Natural Cooling

Without Heatsink
3.5
0.1 0.1 0
10 50 100 500 1000 50 100 500 1000 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

118
 2SC4883/4883A
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1859/A) Application : Audio Output Driver and TV Velocity-modulation
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C)
External Dimensions FM20(TO220F)
Ratings Ratings
Symbol Unit Symbol Conditions Unit
2SC4883 2SC4883A 2SC4883 2SC4883A 10.1±0.2 4.2±0.2

4.0±0.2
2.8 c0.5
VCBO 150 180 V 10max µA
ICBO
VCEO 150 180 V VCB= 150 180 V

8.4±0.2
16.9±0.3
VEBO 6 V IEBO VEB=6V 10max µA
ø3.3±0.2
IC 2 180min a
A V(BR)CEO IC=10mA 150min V

0.8±0.2
b
IB 1 A hFE VCE=10V, IC=0.7A 60 to 240
PC 20(Tc=25°C) W VCE(sat) 1.0max

±0.2
V

3.9
IC=0.7A, IB=70mA

13.0min
Tj 150 °C fT VCE=12V, IE=–0.7A 120typ MHz 1.35±0.15

Tstg –55 to +150 °C COB VCB=10V, f=1MHz 30typ pF 1.35±0.15

0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
B C E
20 20 1 10 –5 100 –100 0.5typ 1.5typ 0.5typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =4V)
Collector-Emitter Saturation Voltage V C E (sa t) (V )

100mA 60mA
2 3 2
A
30m

A
15m

Collector Current I C (A)

Collector Current I C (A)

A
10m 2

1 1

Temp)
emp
I B =5mA

mp)
eT

e Te
1

(Case
Cas

(Cas
˚C (

–55˚C
25˚C
125
I C =2A
0.5A 1A
0 0 0
0 2 4 6 8 10 2 5 10 50 100 500 1000 0 0.5 1.0
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚ C/W)

(V C E =4V) (V C E =4V)
300 300 7

125˚C 5
DC Curr ent Gain h FE

DC Curr ent Gain h FE

Transient Thermal Resistance

Typ
25˚C

100 100 –55˚C

50
50
40 30 1
0.01 0.05 0.1 0.5 1 2 0.01 0.05 0.1 0.5 1 2 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
160 5 20
1m

140
10

Ma xim um Powe r Dissipat io n P C (W)

ms

Typ
10

D
0m

120
Cut-o ff Fr equ ency f T (M H Z )

1 C
W
s

ith
Collect or Cur ren t I C (A)

In

100 0.5
fin
ite
he

80 10
at
si
nk

60 0.1

Without Heatsink
40 0.5
Natural Cooling
1.2SC4883
20 2.2SC4883A
Without Heatsink
1 2 2
0 0.01 0
–0.01 –0.1 –1 –2 1 5 10 50 100 200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

119
 LAPT 2SC4886
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1860) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol Ratings Symbol Conditions Ratings

0.8±0.2
Unit Unit 15.6±0.2 5.5±0.2

VCBO 150 V ICBO VCB=150V 100max µA 3.45 ±0.2

µA

5.5
9.5±0.2
VCEO 150 V IEBO VEB=5V 100max

23.0±0.3
VEBO 5 V V(BR)CEO IC=25mA 150min V
ø3.3±0.2
IC 14 A hFE VCE=4V, IC=5A 50min∗ a

1.6
b
IB 3 A VCE(sat) IC=5A, IB=500mA 2.0max V

3.0
PC fT VCE=12V, IE=–2A 60typ MHz

3.3
80(Tc=25°C) W
1.75
Tj 150 °C COB VCB=10V, f=1MHz 200typ pF 0.8

16.2